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1. 发明申请

US20070176108A1 Semiconductor-based image sensor 审中-公开
标题翻译：基于半导体的图像传感器
公开(公告)号：US20070176108A1
公开(公告)日：2007-08-02
申请号：US10597017
申请日：2005-01-07
申请人： Olaf Such , Josef Lauter , Michael Gnade , Dirk Weiler , Armin Kemna , Gereon Vogtmeier , Roger Steadman
发明人： Olaf Such , Josef Lauter , Michael Gnade , Dirk Weiler , Armin Kemna , Gereon Vogtmeier , Roger Steadman
IPC分类号： G01T1/24 , H01L27/146
CPC分类号： H04N5/32 , H04N5/37455
摘要： A detector arrangement and/or a semiconductor-based image sensor with a plurality of detector elements or image pixels is described, which each have an integrated SD-(Sigma Delta) Modulator (20 to 29) or an integrated SD-A/D-(Sigma Delta Analog/Digital) converter (20 to 30), as well as particularly such a detector arrangement and/or such an image sensor on the basis of a CMOS-semiconductor. Particularly on the basis of the differential version and/or the multi-phase structure of the SD modulator and the SD-A/D converter, a detector arrangement and/or an image sensor with specially high noise robustness, a high dynamic range and a lesser noise can be produced, so that this is particularly suitable for usage in Computer Tomography (CT) apparatus.
摘要翻译：描述了具有多个检测器元件或图像像素的检测器装置和/或基于半导体的图像传感器，每个检测器装置具有集成的SD-（Sigma Delta）调制器（20-29）或集成SD-A / （Sigma Delta Analog / Digital）转换器（20至30），以及特别是基于CMOS半导体的这种检测器装置和/或这种图像传感器。特别是基于SD调制器和SD-A / D转换器的差分版本和/或多相结构，具有特别高的噪声鲁棒性，高动态范围和可以产生较小的噪音，因此特别适用于计算机断层扫描（CT）装置。

2. 发明申请

US20050156182A1 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US20050156182A1
公开(公告)日：2005-07-21
申请号：US10993588
申请日：2004-11-19
申请人： Ingo Hehemann , Armin Kemna
发明人： Ingo Hehemann , Armin Kemna
IPC分类号： H01L31/04 , H01L27/144 , H01L27/146 , H01L27/15 , H01L31/0352 , H01L31/103
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate. The reduction of the bandwidth of photodiodes by the smearing of the response of the photodiode by the diffusion current is alleviated by providing an insulation means in the semiconductor substrate, which confines the diffusion region against the surrounding semiconductor substrate and hereby on the one hand reduces the number of charge carriers contributing to the diffusion portion by reducing the diffusion region, in which the diffusing charge carriers are generated, and on the other hand by “sucking off” diffusing charge carriers generated in the shrunk diffusion region by the insulation means, which is why same do not contribute to the photocurrent.
摘要翻译：除了半导体衬底和半导体衬底中的感光区域之外，光电二极管包括用于产生扩散电流部分的用于产生扩散电流部分的空间电荷区域和扩散区域，光电二极管包括在半导体衬底中的绝缘装置至少部分地限制扩散区域抵靠半导体衬底的相邻周围区域。通过在半导体衬底中提供绝缘装置，通过扩散电流对光电二极管的响应的污染来减小光电二极管的带宽，从而将扩散区域限制在周围的半导体衬底上，从而一方面减少通过减少其中产生扩散电荷载流子的扩散区域而造成扩散部分的电荷载流子数量，另一方面是通过绝缘装置“缩小”扩散在收缩扩散区域中产生的电荷载流子为什么同样没有贡献光电流。

3. 发明授权

US07141833B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US07141833B2
公开(公告)日：2006-11-28
申请号：US10993588
申请日：2004-11-19
申请人： Ingo Hehemann , Armin Kemna
发明人： Ingo Hehemann , Armin Kemna
IPC分类号： H01L31/0328
CPC分类号： H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/103 , Y02E10/50 , Y10S257/927
摘要： Apart from a semiconductor substrate and a photosensitive region in the semiconductor substrate, which comprises a space charge zone region for generating a diffusion current portion and a diffusion region for generating a diffusion current portion, a photodiode includes an insulation means in the semiconductor substrate for at least partially confining the diffusion region against an adjacent surrounding region of the semiconductor substrate. The reduction of the bandwidth of photodiodes by the smearing of the response of the photodiode by the diffusion current is alleviated by providing an insulation means in the semiconductor substrate, which confines the diffusion region against the surrounding semiconductor substrate and hereby on the one hand reduces the number of charge carriers contributing to the diffusion portion by reducing the diffusion region, in which the diffusing charge carriers are generated, and on the other hand by “sucking off” diffusing charge carriers generated in the shrunk diffusion region by the insulation means, which is why same do not contribute to the photocurrent.
摘要翻译：除了半导体衬底和半导体衬底中的感光区域之外，光电二极管包括用于产生扩散电流部分的用于产生扩散电流部分的空间电荷区域和扩散区域，光电二极管包括在半导体衬底中的绝缘装置至少部分地限制扩散区域抵靠半导体衬底的相邻周围区域。通过在半导体衬底中提供绝缘装置，通过扩散电流对光电二极管的响应的污染来减小光电二极管的带宽，从而将扩散区域限制在周围的半导体衬底上，从而一方面减少通过减少其中产生扩散电荷载流子的扩散区域而造成扩散部分的电荷载流子数量，另一方面是通过绝缘装置“缩小”扩散在收缩扩散区域中产生的电荷载流子为什么同样没有贡献光电流。

4. 发明授权

US06597025B2 Light sensitive semiconductor component 有权
公开(公告)号：US06597025B2
公开(公告)日：2003-07-22
申请号：US10095832
申请日：2002-03-12
申请人： Josef Lauter , Armin Kemna , Werner Brockherde , Ralf Hausschild
发明人： Josef Lauter , Armin Kemna , Werner Brockherde , Ralf Hausschild
IPC分类号： H01L2980
CPC分类号： H01L31/115 , H01L27/14643 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) being electrically connected to one another by means of leads (6) and to a collecting lead (4). The dot zones (7) form parallel connected semiconductor diodes whereby minority charge carriers that are generated by the incidence of light in the channel region can be detected after having traveled to the dot zones (7) by diffusion. The described arrangement enables a high sensitivity to be achieved throughout the channel region and also a minimum capacitance of the semiconductor constructed by means of the CMOS technique. Diffusion of charge carriers out of a pixel is prevented by a guard ring (3) of an opposed type of doping.

5. 发明授权

US07009165B2 Optical detection device for detecting an intensity of a light beam and for detecting data transmitted by the light beam 有权
标题翻译：用于检测光束强度并用于检测由光束传输的数据的光学检测装置
公开(公告)号：US07009165B2
公开(公告)日：2006-03-07
申请号：US10994793
申请日：2004-11-19
申请人： Ingo Hehemann , Werner Brockherde , Armin Kemna , Holger Hofmann , Hartmut Richter
发明人： Ingo Hehemann , Werner Brockherde , Armin Kemna , Holger Hofmann , Hartmut Richter
IPC分类号： G01J1/42
CPC分类号： G11B7/131 , G11B7/126
摘要： An optical detection device for detecting an intensity of a light beam in a detection window and for detecting data transmitted by the light beam includes a first detection diode and an array of at least two second detection diodes in a detection window. In addition, provision is made for a first readout circuit connectable to the first detection diode, for reading out the first detection diode at a first readout speed to detect the data, and for a second readout circuit connectable to the second detection diodes, for reading out the second detection diodes at a second readout speed smaller than the first readout speed, so as to detect the intensity of the light beam. A fundamental consideration underlying the present invention is that although the provision of additional detection diodes in the detection window initially is associated with additional expense and a reduction of the surface area of the detection window which may effectively be utilized for data detection, these disadvantages are outweighed however, by the fact that this array of additional detection diodes in the detection window enables more effective and/or less expensive control of the alignment of the light beam transmitting the data with the detection window.
摘要翻译：用于检测检测窗中的光束的强度并用于检测由光束传输的数据的光学检测装置包括检测窗中的第一检测二极管和至少两个第二检测二极管的阵列。此外，提供可连接到第一检测二极管的第一读出电路，用于以第一读出速度读出第一检测二极管以检测数据，以及用于可连接到第二检测二极管的第二读出电路用于读取以小于第一读出速度的第二读出速度输出第二检测二极管，以便检测光束的强度。本发明的基本思想是，尽管在检测窗口中提供额外的检测二极管最初与额外的费用相关联，并且可以有效地用于数据检测的检测窗口的表面积减少，但是这些缺点超过了然而，通过检测窗口中的该附加检测二极管阵列使得能够使用检测窗口传输数据的光束的对准更有效和/或更便宜的控制这一事实。

6. 发明申请

US20050156099A1 Optical detection device 有权
标题翻译：光学检测装置
公开(公告)号：US20050156099A1
公开(公告)日：2005-07-21
申请号：US10994793
申请日：2004-11-19
申请人： Ingo Hehemann , Werner Brockherde , Armin Kemna , Holger Hofmann , Hartmut Richter
发明人： Ingo Hehemann , Werner Brockherde , Armin Kemna , Holger Hofmann , Hartmut Richter
IPC分类号： G11B7/125 , G11B7/13 , H01L27/00
CPC分类号： G11B7/131 , G11B7/126
摘要： An optical detection device for detecting an intensity of a light beam in a detection window and for detecting data transmitted by the light beam includes a first detection diode and an array of at least two second detection diodes in a detection window. In addition, provision is made for a first readout circuit connectable to the first detection diode, for reading out the first detection diode at a first readout speed to detect the data, and for a second readout circuit connectable to the second detection diodes, for reading out the second detection diodes at a second readout speed smaller than the first readout speed, so as to detect the intensity of the light beam. A fundamental consideration underlying the present invention is that although the provision of additional detection diodes in the detection window initially is associated with additional expense and a reduction of the surface area of the detection window which may effectively be utilized for data detection, these disadvantages are outweighed, however, by the fact that this array of additional detection diodes in the detection window enables more effective and/or less expensive control of the alignment of the light beam transmitting the data with the detection window.
摘要翻译：用于检测检测窗中的光束的强度并用于检测由光束传输的数据的光学检测装置包括检测窗中的第一检测二极管和至少两个第二检测二极管的阵列。此外，提供可连接到第一检测二极管的第一读出电路，用于以第一读出速度读出第一检测二极管以检测数据，以及用于可连接到第二检测二极管的第二读出电路用于读取以小于第一读出速度的第二读出速度输出第二检测二极管，以便检测光束的强度。本发明的基本思想是，虽然在检测窗口中提供额外的检测二极管最初与额外的费用相关联，并且可以有效地用于数据检测的检测窗口的表面积减少，但是这些缺点被超过然而，通过检测窗口中的该附加检测二极管阵列使得能够更有效和/或更便宜地控制传输数据与检测窗口的光束的对准这一事实。

7. 发明申请

US20110168892A1 Pixel Implemented Current Amplifier 审中-公开
标题翻译：像素实现电流放大器
公开(公告)号：US20110168892A1
公开(公告)日：2011-07-14
申请号：US11813220
申请日：2005-12-19
申请人： Roger Steadman , Gereon Vogtmeier , Ingo Hehemann , Salah Eddine Ibnou Quossai , Erol Oezkan , Armin Kemna
发明人： Roger Steadman , Gereon Vogtmeier , Ingo Hehemann , Salah Eddine Ibnou Quossai , Erol Oezkan , Armin Kemna
IPC分类号： G01J1/42
CPC分类号： G01T1/2928 , H04N5/32 , H04N5/3745
摘要： The present invention provides a radiation sensor featuring a plurality of individual sensor elements, e.g. pixels, each of which having a radiation detection portion that is adapted to generate an electric current in response to impingement of electromagnetic radiation and a current amplifier for amplifying the photoelectric current generated by the radiation detection portion. Current amplification is therefore performed locally within each pixel of the radiation sensor itself. This local current amplification effectively allows to increase sensitivity and response of the radiation sensor and therefore enables implementation of the radiation sensor on the basis of CMOS technology. By means of the current amplification, the radiation sensor can be adapted for read-out by means of read-out devices and signal processing modules featuring distinct input specifications Further, a bias current required by the pixel implemented current amplifier is reproduced within each pixel and coupled to consecutive or adjacently arranged sensor elements or pixel, thereby providing a cascaded bias current regeneration and bias current distribution scheme.
摘要翻译：本发明提供了一种辐射传感器，其特征在于多个单独的传感器元件，例如像素，每个具有适于响应于电磁辐射的冲击而产生电流的辐射检测部分和用于放大由辐射检测部分产生的光电流的电流放大器。因此，电流放大在辐射传感器本身的每个像素内本地进行。这种局部电流放大有助于增加辐射传感器的灵敏度和响应，因此可以在CMOS技术的基础上实现辐射传感器。通过电流放大，辐射传感器可以通过读出装置和具有不同输入规格的信号处理模块进行读出。此外，像素实现的电流放大器所需的偏置电流在每个像素内被再现，耦合到连续或相邻布置的传感器元件或像素，从而提供级联的偏置电流再生和偏置电流分配方案。

8. 发明申请

US20080217546A1 Pixel Implemented Current to Frequency Converter 审中-公开
标题翻译：像素实现电流到频率转换器
公开(公告)号：US20080217546A1
公开(公告)日：2008-09-11
申请号：US11813215
申请日：2005-12-19
申请人： Roger Steadman , Gereon Vogtmeier , Michael Gnade , Armin Kemna
发明人： Roger Steadman , Gereon Vogtmeier , Michael Gnade , Armin Kemna
IPC分类号： G01T1/24
CPC分类号： G01T1/2928 , G01T1/247
摘要： The present invention provides a radiation sensor (104) that has a plurality of sensor elements, wherein each sensor element has a photoelectric detection portion and an integrated current to frequency converter for a built-in analog digital conversion of an acquired analog signal being indicative of an intensity of electromagnetic radiation impinging on the photoelectric detection part. Typically, the detector element corresponds to a pixel of a light detector, such as a photodiode. Preferably, the current to frequency converter as well as the photoelectric conversion portion are arranged besides one another on a common substrate and are implemented on the basis of CMOS technology allowing for a costs efficient mass production of the radiation sensor.
摘要翻译：本发明提供一种辐射传感器（104），其具有多个传感器元件，其中每个传感器元件具有光电检测部分和集成电流 - 频率转换器，用于对所获取的模拟信号进行内置模拟数字转换，电磁辐射强度照射在光电检测部分上。通常，检测器元件对应于诸如光电二极管的光检测器的像素。优选地，电流到频率转换器以及光电转换部分在公共衬底上彼此相互排列，并且基于允许辐射传感器的成本有效的批量生产的CMOS技术来实现。

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