专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08633572B2 Low ohmic through substrate interconnection for semiconductor carriers 有权
标题翻译：用于半导体载体的低欧姆通过衬底互连
公开(公告)号：US08633572B2
公开(公告)日：2014-01-21
申请号：US12293101
申请日：2007-03-16
申请人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
发明人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
IPC分类号： H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/05 , H01L2224/131 , H01L2924/014
摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
摘要翻译：描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。在处理TWI期间，通孔可以首先用非金属材料填充，例如，多晶硅。在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

2. 发明申请

US20090079021A1 LOW OHMIC THROUGH SUBSTRATE INTERCONNECTION FOR SEMICONDUCTOR CARRIERS 有权
标题翻译：通过半导体载体的基板互连的低OHMIC
公开(公告)号：US20090079021A1
公开(公告)日：2009-03-26
申请号：US12293101
申请日：2007-03-16
申请人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
发明人： Gereon Vogtmeier , Roger Steadman , Ralf Dorscheid , Jeroen Jonkers
IPC分类号： H01L31/02 , H01L23/48 , H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/0401 , H01L2224/05 , H01L2224/131 , H01L2924/014
摘要： It is described a low ohmic Through Wafer Interconnection (TWI) for electronic chips formed on a semiconductor substrate (600). The TWI comprises a first connection extending between a front surface and a back surface of the substrate (600). The first connection (610) comprises a through hole filled with a low ohmic material having a specific resistivity lower than poly silicon. The TWI further comprises a second connection (615) also extending between the front surface and the back surface. The second connection (615) is spatially separated from the first connection (610) by at least a portion of the semiconductor substrate (600). The front surface is provided with a integrated circuit arrangement (620) wherein the first connection (610) is electrically coupled to at least one node of the integrated circuit arrangement (620) without penetrating the integrated circuit arrangement (620). During processing the TWI the through hole may be filled first with a non-metallic material, e.g. poly silicon. After forming integrated components (620) on top of the front surface the substrate (600) may be thinned and the non-metallic material may be substituted with the low ohmic material, which is in particular a metallic material.
摘要翻译：描述了形成在半导体衬底（600）上的电子芯片的低欧姆通晶片互连（TWI）。 TWI包括在基板（600）的前表面和后表面之间延伸的第一连接。第一连接（610）包括填充有低于多晶硅的比电阻率的低欧姆材料的通孔。 TWI还包括也在前表面和后表面之间延伸的第二连接（615）。第二连接（615）通过半导体衬底（600）的至少一部分在空间上与第一连接（610）分离。前表面设置有集成电路装置（620），其中第一连接（610）电耦合到集成电路装置（620）的至少一个节点而不穿透集成电路装置（620）。在处理TWI期间，通孔可以首先用非金属材料填充，例如，多晶硅。在前表面顶部形成集成组件（620）之后，可以使衬底（600）变薄并且非金属材料可以被低欧姆材料代替，这是特别是金属材料。

3. 发明申请

US20110248192A1 METHOD AND DEVICE FOR GENERATING EUV RADIATION OR SOFT X-RAYS WITH ENHANCED EFFICIENCY 有权
标题翻译：用于产生具有增强效率的EUV辐射或软X射线的方法和装置
公开(公告)号：US20110248192A1
公开(公告)日：2011-10-13
申请号：US13139601
申请日：2009-12-09
申请人： Jeroen Jonkers , Felix Alexander Krepper , Harald Ernest Verbraak , Jakob Willi Neff
发明人： Jeroen Jonkers , Felix Alexander Krepper , Harald Ernest Verbraak , Jakob Willi Neff
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005
摘要： The present invention relates to a method and device for generating optical radiation, in particular EUV radiation or soft x-rays, by means of an electrically operated discharge. A plasma (15) is ignited in a gaseous medium between at least two electrodes (1, 2), wherein said gaseous medium is produced at least partly from a liquid material (6) which is applied to one or several surface(s) moving in the discharge space and is at least partially evaporated by one or several pulsed energy beams. In the proposed method and device at least two consecutive pulses (9, 18) are applied within a time interval of each electrical discharge onto said surface(s). With this measure, the collectable conversion efficiency is increased compared to the use of only one single energy pulse within each electrical discharge.
摘要翻译：本发明涉及通过电动放电产生光辐射，特别是EUV辐射或软X射线的方法和装置。等离子体（15）在至少两个电极（1,2）之间的气态介质中点燃，其中所述气体介质至少部分地由施加到移动的一个或多个表面的液体材料（6）产生在放电空间中并且被一个或多个脉冲能量束至少部分蒸发。在所提出的方法和装置中，在每个放电到所述表面的时间间隔内施加至少两个连续脉冲（9,18）。通过这种措施，与在每次放电期间仅使用一个单个能量脉冲相比，可收集的转换效率提高。

4. 发明申请

US20090206268A1 METHOD OF INCREASING THE CONVERSION EFFICIENCY OF AN EUV AND/OR SOFT X-RAY LAMP AND A CORRESPONDING APPARATUS 有权
标题翻译：提高EUV和/或软X射线灯转换效率的方法及相关装置
公开(公告)号：US20090206268A1
公开(公告)日：2009-08-20
申请号：US12300858
申请日：2007-05-08
申请人： Jeroen Jonkers , Dominik Marcel Vaudrevange
发明人： Jeroen Jonkers , Dominik Marcel Vaudrevange
IPC分类号： G01T1/18 , G01J3/10
CPC分类号： H05G2/003 , H05G2/005
摘要： The present invention relates to a method of increasing the conversion efficiency of an EUV and/or soft X-ray lamp, in which a discharge plasma (8) emitting EUV radiation or soft X-rays is generated in a gaseous medium formed by an evaporated liquid material in a discharge space, said liquid material being provided on a surface in the discharge space and being at least partially evaporated by an energy beam (9). The invention also refers to a corresponding apparatus for producing EUV radiation and/or soft X-rays. In the method, a gas (11) composed of chemical elements having a lower mass number than chemical elements of the liquid material is supplied through at least one nozzle (10) in a directed manner to the discharge space and/or to the liquid material on a supply path to the discharge space in order to reduce the density of the evaporated liquid material in the discharge space. With the present method and corresponding apparatus the conversion efficiency of the lamp is increased.
摘要翻译：本发明涉及一种提高EUV和/或软X射线灯的转换效率的方法，其中在由蒸发的形成的气体介质中产生发射EUV辐射或软X射线的放电等离子体（8）液体材料在放电空间中，所述液体材料设置在放电空间中的表面上，并被能量束（9）至少部分地蒸发。本发明还涉及用于产生EUV辐射和/或软X射线的相应装置。在该方法中，由具有比液体材料的化学元素低的质量数的化学元素构成的气体（11）通过至少一个喷嘴（10）以指向的方式供给到放电空间和/或液体材料在放电空间的供给路径上，以便减小放电空间中蒸发的液体材料的密度。利用本方法和相应的装置，灯的转换效率提高。

5. 发明申请

US20070090304A1 Method and apparatus for producing extreme ultraviolet radiation or soft x-ray radiation 有权
标题翻译：用于产生极紫外辐射或软X射线辐射的方法和装置
公开(公告)号：US20070090304A1
公开(公告)日：2007-04-26
申请号：US10570535
申请日：2004-09-01
申请人： Jeroen Jonkers , Dominik Vaudrevange , Willi Neff
发明人： Jeroen Jonkers , Dominik Vaudrevange , Willi Neff
IPC分类号： G01J3/10
CPC分类号： H05G2/003 , H05G2/005
摘要： A method of producing extreme ultraviolet radiation (EUV) or soft X-ray radiation by means of an electrically operated discharge, in particular for EUV lithography or for metrology, in which a plasma (22) is ignited in a gaseous medium between at least two electrodes (14, 16) in a discharge space (12), said plasma emitting said radiation that is to be produced. The gaseous medium is produced from a metal melt (24), which is applied to a surface in said discharge space (12) and at least partially evaporated by an energy beam, in particular by a laser beam (20).
摘要翻译：一种通过电操作的放电产生极紫外辐射（EUV）或软X射线辐射的方法，特别是用于EUV光刻或计量的方法，其中等离子体（22）在气体介质中点燃至少两个放电空间（12）中的电极（14,16），所述等离子体发射要产生的辐射。气体介质由金属熔体（24）产生，金属熔体（24）施加到所述放电空间（12）中的表面，并且至少部分地被能量束，特别是激光束（20）蒸发。

6. 发明授权

US07170586B2 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US07170586B2
公开(公告)日：2007-01-30
申请号：US11335681
申请日：2006-01-20
申请人： Vadim Yevgenyevich Banine , Levinus Pieter Bakker , Jeroen Jonkers , Erik Roelof Loopstra
发明人： Vadim Yevgenyevich Banine , Levinus Pieter Bakker , Jeroen Jonkers , Erik Roelof Loopstra
IPC分类号： G03B24/54
CPC分类号： G03F7/70008 , G03F7/7005
摘要： A lithographic apparatus includes an illumination system configured to provide a beam of radiation, a support configured to support a patterning device, a substrate table and a projection system. Furthermore, the lithographic apparatus includes a plurality of EUV sources for providing EUV radiation to the illumination system and a distributor which is arranged to convert the EUV radiation from each of the EUV sources into an intermediate beam of radiation. The intermediate beam of radiation is directed from the distributor in a first direction by a mirror surface. The distributor may include a rotationally driven mirror arrangement, the axis of rotation being non-parallel to the mirror surface.
摘要翻译：光刻设备包括被配置为提供辐射束的照明系统，被配置为支撑图案形成装置的支撑件，衬底台和投影系统。此外，光刻设备包括用于向照明系统提供EUV辐射的多个EUV源和布置成将来自每个EUV源的EUV辐射转换成中间辐射束的分配器。辐射的中间束通过镜面从第一方向从分配器引导。分配器可以包括旋转驱动的反射镜布置，旋转轴线不平行于镜面。

7. 发明授权

US07088424B2 Lithographic projection apparatus, reflector assembly for use therein, and device manufacturing method 有权
标题翻译：光刻投影装置，其中使用的反射器组件和装置制造方法
公开(公告)号：US07088424B2
公开(公告)日：2006-08-08
申请号：US11034260
申请日：2005-01-13
申请人： Levinus Pieter Bakker , Jeroen Jonkers , Frank Jeroen Pieter Schuurmans , Hugo Matthieu Visser
发明人： Levinus Pieter Bakker , Jeroen Jonkers , Frank Jeroen Pieter Schuurmans , Hugo Matthieu Visser
IPC分类号： G03B27/42
CPC分类号： B82Y10/00 , G02B17/004 , G02B17/006 , G02B27/0043 , G03F7/70166 , G03F7/70175 , G03F7/70891 , G03F7/70916
摘要： A lithographic projection apparatus includes a radiation system configured to form a beam of radiation from radiation emitted by a radiation source, as well as a support configured to hold a patterning device, which when irradiated by the beam of radiation provides the beam of radiation with a pattern. A substrate table is configured to hold a substrate, and a projection system is configured to image an irradiated portion of the patterning device onto a target portion of the substrate. The radiation system further includes an aperture at a distance from the optical axis, a reflector which is placed behind the aperture when seen from the source and a structure placed in a low radiation intensive region behind the aperture.
摘要翻译：光刻投影设备包括被配置成由辐射源发射的辐射形成辐射束的辐射系统，以及被配置为保持图案形成装置的支撑件，当图案形成装置被辐射束照射时，辐射束具有模式。衬底台被配置为保持衬底，并且投影系统被配置为将图案形成装置的照射部分成像到衬底的目标部分上。辐射系统还包括距离光轴一定距离处的孔，当从源观察时，放置在孔后面的反射器和放置在孔后面的低辐射密集区域中的结构。

8. 发明授权

US06683936B2 EUV-transparent interface structure 失效
标题翻译： EUV透明接口结构
公开(公告)号：US06683936B2
公开(公告)日：2004-01-27
申请号：US10124035
申请日：2002-04-17
申请人： Jeroen Jonkers
发明人： Jeroen Jonkers
IPC分类号： G21K500
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , G03F7/70933
摘要： An EUV-transparent interface structure for optically linking a first closed chamber (80) and a second closed chamber (70) whilst preventing a contaminating flow of a medium and/or particles from one chamber to the other comprises an EUV-transparent member (60) in the form of a membrane (60) or a channel structure (100). An EUV-transparent (inert) gas (68) is forced to flow at the side of the member facing the source of contamination (LA; W) and towards the source of contamination to keep the contaminating particles away from the member (60; 100). The interface structure may be arranged between an EUV radiation source (LA) and the illuminator optics (IL) and/or between the projection system (PL) and the resist layer (RL) on top of a substrate (W) in a lithographic projection apparatus.
摘要翻译：用于光学连接第一封闭室（80）和第二封闭室（70）同时防止介质和/或颗粒从一个室到另一个室的污染流动的EUV透明界面结构包括EUV透明构件（60 ）以膜（60）或通道结构（100）的形式。 EUV透明（惰性）气体（68）被迫在面向污染源（LA; W）的构件的侧面流动并且朝向污染源流动，以使污染的颗粒远离构件（60; 100））。接口结构可以布置在EUV辐射源（LA）和照明器光学器件（IL）之间和/或投影系统（PL）和抗蚀剂层（RL）之间，在光刻投影仪器。

9. 发明授权

US06576912B2 Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window 有权
标题翻译：装有极紫外光窗口的平版印刷设备同时作为真空窗口
公开(公告)号：US06576912B2
公开(公告)日：2003-06-10
申请号：US09752818
申请日：2001-01-03
申请人： Hugo M. Visser , Richard L. Sandstrom , Theodorus H. J. Bisschops , Vadim Y. Banine , Jeroen Jonkers
发明人： Hugo M. Visser , Richard L. Sandstrom , Theodorus H. J. Bisschops , Vadim Y. Banine , Jeroen Jonkers
IPC分类号： G21G500
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70166 , G03F7/70916 , G21K1/06
摘要： A lithographic projection apparatus has a discharge plasma radiation source that is contained in a vacuum chamber. The radiation source is to generate a beam of EUV radiation. A chamber wall of the vacuum chamber incorporates a channel structure comprising adjacent narrow channels separated by walls that are substantially parallel to a propagation direction of the radiation generated so as to pass the radiation from the vacuum chamber through the structure to another subsequent vacuum chamber. In the subsequent vacuum chamber, a much higher vacuum level (lower pressure) can be maintained than is present in the vacuum chamber of the radiation source.
摘要翻译：光刻投影装置具有包含在真空室中的放电等离子体辐射源。辐射源是产生一束EUV辐射。真空室的室壁包括通道结构，该通道结构包括由壁隔开的相邻窄通道，该窄通道基本上平行于所产生的辐射的传播方向，以便将来自真空室的辐射通过该结构传递到另一个随后的真空室。在随后的真空室中，可以比辐射源的真空室中存在的更高的真空度（较低的压力）得到保持。

10. 发明授权

US08253123B2 Method and device for generating EUV radiation or soft X-rays with enhanced efficiency 有权
标题翻译：用于产生EUV辐射或软X射线的提高效率的方法和装置
公开(公告)号：US08253123B2
公开(公告)日：2012-08-28
申请号：US13139601
申请日：2009-12-09
申请人： Jeroen Jonkers , Felix A. Kuepper , Harald E. Verbraak , Jakob W. Neff
发明人： Jeroen Jonkers , Felix A. Kuepper , Harald E. Verbraak , Jakob W. Neff
IPC分类号： G01N21/00 , G01N21/33 , H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , H05G2/005
摘要： The present invention relates to a method and device for generating optical radiation, in particular EUV radiation or soft x-rays, by means of an electrically operated discharge. A plasma (15) is ignited in a gaseous medium between at least two electrodes (1, 2), wherein said gaseous medium is produced at least partly from a liquid material (6) which is applied to one or several surface(s) moving in the discharge space and is at least partially evaporated by one or several pulsed energy beams. In the proposed method and device at least two consecutive pulses (9, 18) are applied within a time interval of each electrical discharge onto said surface(s). With this measure, the collectable conversion efficiency is increased compared to the use of only one single energy pulse within each electrical discharge.
摘要翻译：本发明涉及通过电动放电产生光辐射，特别是EUV辐射或软X射线的方法和装置。等离子体（15）在至少两个电极（1,2）之间的气态介质中点燃，其中所述气体介质至少部分地由施加到移动的一个或多个表面的液体材料（6）产生在放电空间中并且被一个或多个脉冲能量束至少部分蒸发。在所提出的方法和装置中，在每个放电到所述表面的时间间隔内施加至少两个连续脉冲（9,18）。通过这种措施，与在每次放电期间仅使用一个单个能量脉冲相比，可收集的转换效率提高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式