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1. 发明申请

US20110318864A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20110318864A1
公开(公告)日：2011-12-29
申请号：US13222423
申请日：2011-08-31
申请人： Fumito ISAKA , Sho KATO , Junpei MOMO
发明人： Fumito ISAKA , Sho KATO , Junpei MOMO
IPC分类号： H01L31/18
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

2. 发明申请

US20090209059A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：制造光电转换装置的方法
公开(公告)号：US20090209059A1
公开(公告)日：2009-08-20
申请号：US12369760
申请日：2009-02-12
申请人： Fumito ISAKA , Sho KATO , Junpei MOMO
发明人： Fumito ISAKA , Sho KATO , Junpei MOMO
IPC分类号： H01L31/0216
CPC分类号： H01L31/022425 , H01L31/0236 , H01L31/02363 , H01L31/03685 , H01L31/03762 , H01L31/068 , H01L31/1892 , Y02E10/545 , Y02E10/547 , Y02E10/548
摘要： The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
摘要翻译：目的是制造具有优异的光电转换特性的光电转换装置，其特征在于以太阳能电池为代表，有效利用硅材料。通过光学调制器用激光束照射单晶硅层，以在其表面上形成不均匀的结构。以下列方式获得单晶硅层：在单晶硅衬底中形成脆化层; 支撑基板的一个表面和形成在单晶硅基板上的绝缘层的一个表面被设置成接触和接合; 进行热处理; 并且通过沿着脆化层或脆化层的周边分离固定到支撑基板上的一部分单晶硅基板，在支撑基板上形成单晶硅层。然后，通过光调制器在单晶硅层的分离面上进行激光束的照射，光调制器规则地调制光强度，并且在表面上形成不均匀性。由于不均匀性，入射光的反射降低，相对于光的吸收性提高，光电转换装置的光电转换效率提高。

3. 发明申请

US20100291754A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体基板及其制造方法以及制造半导体器件的方法
公开(公告)号：US20100291754A1
公开(公告)日：2010-11-18
申请号：US12844224
申请日：2010-07-27
申请人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
发明人： Masaki KOYAMA , Fumito ISAKA , Akihisa SHIMOMURA , Junpei MOMO
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02667 , H01L21/02675
摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.
摘要翻译：用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。用激光束照射与单晶半导体衬底分离的单晶半导体层。通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

4. 发明申请

US20090115028A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：制造半导体衬底，半导体器件和电子器件的方法
公开(公告)号：US20090115028A1
公开(公告)日：2009-05-07
申请号：US12246569
申请日：2008-10-07
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Yoji NAGANO , Junpei MOMO
IPC分类号： H01L21/762 , H01L29/06
CPC分类号： H01L27/1266 , H01L21/02532 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L29/66772
摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.
摘要翻译：制造包括其间具有缓冲层的单晶半导体层的半导体衬底。掺杂氢的半导体衬底形成含有大量氢的损伤层。在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

5. 发明申请

US20090111244A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090111244A1
公开(公告)日：2009-04-30
申请号：US12246577
申请日：2008-10-07
申请人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
发明人： Shunpei YAMAZAKI , Junpei MOMO , Fumito ISAKA , Eiji HIGA , Masaki KOYAMA , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , B23K26/03 , B23K26/083 , B23K26/12 , B23K26/127 , B23K26/14 , H01L21/268 , H01L21/3247 , H01L21/76254 , H01L27/1214 , H01L27/1218 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.
摘要翻译：照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

6. 发明申请

US20110053384A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20110053384A1
公开(公告)日：2011-03-03
申请号：US12872222
申请日：2010-08-31
申请人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
发明人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

7. 发明申请

US20100081251A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100081251A1
公开(公告)日：2010-04-01
申请号：US12557545
申请日：2009-09-11
申请人： Atsuo ISOBE , Junpei MOMO , Naoki OKUNO
发明人： Atsuo ISOBE , Junpei MOMO , Naoki OKUNO
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L27/1222 , H01L29/66772
摘要： A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light.
摘要翻译：用单一晶体半导体衬底照射加速离子以在单晶半导体衬底中形成脆化区域。单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合。在脆化区域分离单晶半导体衬底，以在基底衬底上形成半导体层。进行热处理以减少半导体层中的缺陷。然后用激光照射半导体层。

8. 发明申请

US20120073984A1 METHOD FOR RECOVERING METALLIC LITHIUM 有权
标题翻译：回收金属锂的方法
公开(公告)号：US20120073984A1
公开(公告)日：2012-03-29
申请号：US13232001
申请日：2011-09-14
申请人： Yumiko SAITO , Junpei MOMO , Rie MATSUBARA , Hiroatsu TODORIKI
发明人： Yumiko SAITO , Junpei MOMO , Rie MATSUBARA , Hiroatsu TODORIKI
IPC分类号： C25F1/12
CPC分类号： C22B26/12 , C25C3/02 , H01M10/54 , Y02W30/84
摘要： An object is to recover metallic lithium from metallic lithium on which an unnecessary substance is formed without discarding the metallic lithium on which an unnecessary substance is formed. The present invention relates to a method for recovering metallic lithium in such a manner that metallic lithium on which a substance is formed is reacted with nitrogen to form lithium nitride; the lithium nitride is reacted with carbon dioxide to form lithium carbonate; the lithium carbonate is reacted with hydrochloric acid to form lithium chloride; the lithium chloride and potassium chloride are melted; and electrolysis is applied to the melted lithium chloride and potassium chloride.
摘要翻译：目的是从不形成不需要的物质的金属锂中除去不需要的物质的金属锂中回收金属锂。本发明涉及一种回收金属锂的方法，其中形成物质的金属锂与氮反应形成氮化锂; 使氮化锂与二氧化碳反应形成碳酸锂; 碳酸锂与盐酸反应形成氯化锂; 氯化锂和氯化钾熔化; 并对熔融的氯化锂和氯化钾进行电解。

9. 发明申请

US20110212596A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110212596A1
公开(公告)日：2011-09-01
申请号：US13106158
申请日：2011-05-12
申请人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Akihisa SHIMOMURA , Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02675 , H01L21/2007
摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
摘要翻译：要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。激光照射在还原气氛或惰性气氛下进行。

10. 发明申请

US20100151663A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20100151663A1
公开(公告)日：2010-06-17
申请号：US12634107
申请日：2009-12-09
申请人： Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
发明人： Hideto OHNUMA , Junpei MOMO , Shunpei YAMAZAKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.
摘要翻译：当单晶半导体层熔化时，氧的向外扩散被促进。具体地，形成SOI衬底，其中形成具有设置在基底衬底上的包含氧的结合层的SOI结构和设置在包括氧的接合层上的单晶半导体层，并且部分单晶半导体层在基底基板在高于或等于500℃且低于基底的熔点的温度下被加热的状态下通过用激光束照射而熔化。

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