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1. 发明授权

US08043935B2 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device 有权
标题翻译：半导体基板的制造方法及半导体装置的制造方法
公开(公告)号：US08043935B2
公开(公告)日：2011-10-25
申请号：US12621541
申请日：2009-11-19
申请人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
发明人： Fumito Isaka , Sho Kato , Yu Arita , Akihisa Shimomura
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

2. 发明授权

US09559235B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09559235B2
公开(公告)日：2017-01-31
申请号：US13316631
申请日：2011-12-12
申请人： Koichiro Tanaka , Yu Arita
发明人： Koichiro Tanaka , Yu Arita
IPC分类号： H01L31/00 , H01L31/042 , H01L25/00 , H02N6/00 , H01L31/054 , H02S40/20 , H02S40/22 , H01L31/0232
CPC分类号： H01L31/0549 , H01L31/0232 , H01L31/054 , H02S40/00 , H02S40/20 , H02S40/22 , Y02E10/50 , Y02E10/52
摘要： The present invention provides a photoelectric conversion device. Specifically, the photoelectric conversion device has a structure in which a substrate including a photoelectric conversion element provided at the bottom and a substrate including a photoelectric conversion element provided at the side are secured in a brace form by a light-dividing device. This structure divides incident light using the light-dividing device into a plurality of wavelength bands, and causes the divided light to fall onto the photoelectric conversion elements provided at the bottom and side, thereby making it possible to provide a photoelectric conversion device which is capable of generating a lame amount of electric power. In addition, the light-dividing device distributes pressures and impacts applied to the substrates at the bottom and side, thus making it possible to provide a photoelectric conversion device which has resistance to pressures and impacts.
摘要翻译：本发明提供一种光电转换装置。具体地，光电转换装置具有这样的结构，其中包括设置在底部的光电转换元件的基板和包括设置在侧面的光电转换元件的基板通过分光装置固定在支架形式中。该结构使用分光装置将入射光分成多个波长带，并且使分割的光落在设置在底部和侧面的光电转换元件上，从而可以提供能够产生不足的电量。此外，分光装置分布在底部和侧面上施加到基板的压力和冲击，从而可以提供耐压力和冲击的光电转换装置。

3. 发明申请

US20120152314A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20120152314A1
公开(公告)日：2012-06-21
申请号：US13316631
申请日：2011-12-12
申请人： Koichiro TANAKA , Yu Arita
发明人： Koichiro TANAKA , Yu Arita
IPC分类号： H01L31/052
CPC分类号： H01L31/0549 , H01L31/0232 , H01L31/054 , H02S40/00 , H02S40/20 , H02S40/22 , Y02E10/50 , Y02E10/52
摘要： The present invention provides a photoelectric conversion device. Specifically, the photoelectric conversion device has a structure in which a substrate including a photoelectric conversion element provided at the bottom and a substrate including a photoelectric conversion element provided at the side are secured in a brace form by a light-dividing device. This structure divides incident light using the light-dividing device into a plurality of wavelength bands, and causes the divided light to fall onto the photoelectric conversion elements provided at the bottom and side, thereby making it possible to provide a photoelectric conversion device which is capable of generating a lame amount of electric power. In addition, the light-dividing device distributes pressures and impacts applied to the substrates at the bottom and side, thus making it possible to provide a photoelectric conversion device which has resistance to pressures and impacts.
摘要翻译：本发明提供一种光电转换装置。具体地，光电转换装置具有这样的结构，其中包括设置在底部的光电转换元件的基板和包括设置在侧面的光电转换元件的基板通过分光装置固定在支架形式中。该结构使用分光装置将入射光分成多个波长带，并且使分割的光落在设置在底部和侧面的光电转换元件上，从而可以提供能够产生不足的电量。此外，分光装置分布在底部和侧面上施加到基板的压力和冲击，从而可以提供耐压力和冲击的光电转换装置。

4. 发明申请

US20100129948A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20100129948A1
公开(公告)日：2010-05-27
申请号：US12621541
申请日：2009-11-19
申请人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
发明人： Fumito ISAKA , Sho KATO , Yu ARITA , Akihisa SHIMOMURA
IPC分类号： H01L21/18 , H01L31/18
CPC分类号： H01L21/76254 , H01L31/028 , H01L31/075 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.
摘要翻译：本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。此外，另一个目的是提高半导体衬底的生产率。通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离两层。因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

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