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1. 发明申请

US20060154482A1 Semiconductor device 失效
公开(公告)号：US20060154482A1
公开(公告)日：2006-07-13
申请号：US10543378
申请日：2003-12-26
申请人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
发明人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76862
摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

2. 发明授权

US07476619B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07476619B2
公开(公告)日：2009-01-13
申请号：US10543378
申请日：2003-12-26
申请人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
发明人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76862
摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.
摘要翻译：本发明的目的是通过在半导体器件的制造工艺中使用超临界状态的介质，可以将Cu扩散防止膜和Cu膜嵌入到高纵横比的精细图案中。本发明的目的是通过一种基板处理方法实现的，该方法包括：第一步骤，通过将含有超临界状态的第一介质的第一处理介质提供到基板上来处理基板;第二步骤，在所述基板上形成Cu扩散防止膜通过将含有超临界状态的第二介质的第二处理介质供给到所述基板上，以及通过将含有超临界状态的第三介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序来进行。

3. 发明申请

US20050260846A1 Substrate processing method, semiconductor device production method, and semiconductor device 审中-公开
标题翻译：基板加工方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US20050260846A1
公开(公告)日：2005-11-24
申请号：US11190127
申请日：2005-07-27
申请人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
发明人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
IPC分类号： C23C18/02 , C23C18/04 , C23C18/18 , C25D7/12 , H01L21/304 , H01L21/768 , H01L21/20 , H01L21/4763
CPC分类号： H01L21/76843 , C23C18/1865 , C23C18/1882 , C23C18/1893 , C25D7/12 , H01L21/76807 , H01L21/76862 , H01L21/76877
摘要： A substrate processing method is disclosed that, when forming a copper film on a miniaturized pattern with a copper diffusion prevention film being formed thereon, allows cleaning the copper diffusion prevention film on a substrate by using a supercritical medium, and allows the copper film to be formed by using the supercritical medium while preventing void occurrence and ensuring good adhesiveness with the miniaturized pattern. The substrate processing method includes a first step of supplying a first processing medium including a supercritical medium on a substrate and cleaning a film including a metal on a surface of the substrate; and a second step of supplying a second processing medium including the supercritical medium on the substrate, and forming a copper film.
摘要翻译：公开了一种基板处理方法，当在其上形成有铜扩散防止膜的小型图案上形成铜膜时，可以通过使用超临界介质来清洗基板上的铜扩散防止膜，并且允许铜膜为通过使用超临界介质形成，同时防止空隙发生并确保与小型化图案的良好粘附性。基板处理方法包括：第一步骤，在基板上提供包含超临界介质的第一处理介质，并在基板的表面上清洗包含金属的膜; 以及在基板上供给包含超临界介质的第二处理介质，形成铜膜的第二工序。

4. 发明申请

US20050158477A1 Deposition apparatus and a deposition method using medium in a supercritical state 审中-公开
标题翻译：沉积装置和使用超临界状态的介质的沉积方法
公开(公告)号：US20050158477A1
公开(公告)日：2005-07-21
申请号：US11017848
申请日：2004-12-22
申请人： Vincent Vezin , Kenichi Kubo , Takayuki Komiya , Eiichi Kondoh
发明人： Vincent Vezin , Kenichi Kubo , Takayuki Komiya , Eiichi Kondoh
IPC分类号： C23C16/455 , B05C11/00 , C23C4/12 , C23C16/00 , C23C26/00 , C23C26/02 , H01L21/285 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76877 , C23C4/123 , C23C26/00 , C23C26/02 , H01L21/28556 , H01L21/288 , H01L21/76843
摘要： A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.
摘要翻译：一种沉积设备，用于将包括处于超临界状态的介质和处理过的衬底的前体的处理介质供应到处理过的衬底沉积在其上，包括处理容器，设置在处理容器中的支撑架，支撑经处理的基板，并且包括加热部分，介质供应部分，其通过介质供应路径连接到处理容器，并将处理介质供应到处理容器;以及介质回流路径，被配置为回流供给到过程容器到介质供应部分。介质供给部包括构造成控制处理介质的温度的第一温度控制部。

5. 发明授权

US07750654B2 Probe method, prober, and electrode reducing/plasma-etching processing mechanism 有权
标题翻译：探头方法，探针和电极还原/等离子体蚀刻处理机制
公开(公告)号：US07750654B2
公开(公告)日：2010-07-06
申请号：US11068973
申请日：2005-03-02
申请人： Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
发明人： Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
IPC分类号： G01R31/02
CPC分类号： G01R31/2898
摘要： A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.
摘要翻译：本发明的探针方法包括通过使用成形气体来还原晶片的电极的步骤，以及在干燥气氛中使电极和探针彼此接触的步骤。探针方法还包括在待测试物体的电极的还原过程之前，将待测物体放置在惰性气体气氛中并加热被测物体。通过在大气压下使还原气体与待测试物体的电极接触来进行还原过程。

6. 发明申请

US20050151549A1 Probe method, prober, and electrode reducing/plasma-etching processing mechanism 有权
标题翻译：探头方法，探针和电极还原/等离子体蚀刻处理机制
公开(公告)号：US20050151549A1
公开(公告)日：2005-07-14
申请号：US11068973
申请日：2005-03-02
申请人： Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
发明人： Katsuya Okumura , Shigekazu Komatsu , Yuichi Abe , Kunihiro Furuya , Vincent Vezin , Kenichi Kubo
IPC分类号： G01R31/02 , G01R31/28
CPC分类号： G01R31/2898
摘要： A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.
摘要翻译：本发明的探针方法包括通过使用成形气体来还原晶片的电极的步骤，以及在干燥气氛中使电极和探针彼此接触的步骤。探针方法还包括在待测试物体的电极的还原过程之前，将待测物体放置在惰性气体气氛中并加热被测物体。通过在大气压下使还原气体与待测试物体的电极接触来进行还原过程。

7. 发明授权

US06548112B1 Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber 失效
标题翻译：将前体蒸汽从低蒸汽压力液体源输送到CVD室的装置和方法
公开(公告)号：US06548112B1
公开(公告)日：2003-04-15
申请号：US09442930
申请日：1999-11-18
申请人： Joseph T. Hillman , Tugrul Yasar , Kenichi Kubo , Vincent Vezin , Hideaki Yamasaki , Yasuhiko Kojima , Yumiko Kawano , Hideki Yoshikawa
发明人： Joseph T. Hillman , Tugrul Yasar , Kenichi Kubo , Vincent Vezin , Hideaki Yamasaki , Yasuhiko Kojima , Yumiko Kawano , Hideki Yoshikawa
IPC分类号： C23C1618
CPC分类号： C23C16/4486
摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.
摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。当处于不稳定的液体状态时，液体前体保持在室温或室温以下。在蒸发器中，引入热量以均匀加热雾化的前体。蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

8. 发明授权

US07323220B2 Gas phase growth system, method of operating the system, and vaporizer for the system 失效
标题翻译：气相生长系统，操作系统的方法和系统的蒸发器
公开(公告)号：US07323220B2
公开(公告)日：2008-01-29
申请号：US10998738
申请日：2004-11-30
申请人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
发明人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
IPC分类号： C23C16/18
CPC分类号： C23C16/18 , C23C16/4485
摘要： A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber. During the stabilizer feeding stage, a stabilizer for the organometallic complex is fed in a gaseous state during normal operation of the vaporizer, wherein the stabilizer feeding stage is executed when the vaporizer is not vaporizing the organometallic complex.
摘要翻译：公开了一种操作气相生长系统的方法。该方法包括处理阶段和稳定器进料阶段。在本公开的非限制性实施方案中，有机金属络合物通过蒸发器蒸发，并且随后通过使蒸发器与反应室连通的气体管线进料到反应室，由此在反应室中的基板上形成膜。在稳定剂进料阶段期间，在汽化器的正常操作期间，有机金属配合物的稳定剂以气态进料，其中当汽化器不蒸发有机金属络合物时，执行稳定剂进料阶段。

9. 发明授权

US06893953B2 Fabrication process of a semiconductor device including a CVD process of a metal film 失效
标题翻译：包括金属膜的CVD工艺的半导体器件的制造工艺
公开(公告)号：US06893953B2
公开(公告)日：2005-05-17
申请号：US09835820
申请日：2001-04-17
申请人： Tomohisa Hoshino , Vincent Vezin , Gishi Chung
发明人： Tomohisa Hoshino , Vincent Vezin , Gishi Chung
IPC分类号： C25D7/12 , C23C16/02 , C23C16/56 , H01L21/28 , H01L21/285 , H01L21/311 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76862 , H01L21/2855 , H01L21/28556 , H01L21/31116 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L21/76877
摘要： A method for fabricating a semiconductor device includes the steps of forming a barrier conductor layer on a substrate, exposing the barrier conductor layer to a first reducing gas atmosphere at an elevated substrate temperature, forming a metal film on the barrier conductor layer by a CVD process, and exposing the metal film to a second gas atmosphere at an elevated substrate temperature.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成阻挡导体层，在升高的衬底温度下将势垒导体层暴露于第一还原气体气氛，通过CVD工艺在阻挡导体层上形成金属膜并且在升高的基板温度下将金属膜暴露于第二气体气氛。

10. 发明申请

US20050092250A1 Gas phase growth system, method of operating the system, and vaporizer for the system 失效
标题翻译：气相生长系统，操作系统的方法和系统的蒸发器
公开(公告)号：US20050092250A1
公开(公告)日：2005-05-05
申请号：US10998738
申请日：2004-11-30
申请人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
发明人： Yasuhiko Kojima , Vincent Vezin , Tomohisa Hoshino
IPC分类号： C23C16/44 , C23C16/18 , C23C16/448 , H01L21/205 , C23C16/00
CPC分类号： C23C16/18 , C23C16/4485
摘要： When the vaporizer 2 does not vaporize an organometallic complex Cu (hfac) TMVS, a stabilizer TMVS for the organometallic complex is fed into the gas area Av of the vaporizer 2 or the pipe 14 connected to the vaporizer 1 on the downstream side thereof in a gaseous state.
摘要翻译：当蒸发器2不蒸发有机金属配合物Cu（hfac）TMVS时，将用于有机金属配合物的稳定剂TMVS进料到蒸发器2的气体区域Av或其蒸发器1的下游侧的管14中气态。

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