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1. 发明授权

US08900991B2 Film forming method and storage medium 有权
标题翻译：成膜方法和储存介质
公开(公告)号：US08900991B2
公开(公告)日：2014-12-02
申请号：US13402385
申请日：2012-02-22
申请人： Shuji Azumo , Yasuhiko Kojima
发明人： Shuji Azumo , Yasuhiko Kojima
IPC分类号： H01L21/768 , C23C16/16 , C23C16/448 , H01L23/532 , H01L21/285
CPC分类号： H01L21/28556 , C23C16/16 , C23C16/4488 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co4(CO)12 as a single film forming material is supplied into the processing chamber. Then, the gaseous Co4(CO)12 is thermally decomposed on the substrate to form the Co film on the substrate.
摘要翻译：在设置在处理室中的基板上形成Co膜的成膜方法中，将作为单一成膜材料的气态Co 4（CO）12供给到处理室。然后，气体Co4（CO）12在基板上热分解，在基板上形成Co膜。

2. 发明授权

US08721846B2 Method of forming film, film forming apparatus and storage medium 有权
标题翻译：成膜方法，成膜装置和储存介质
公开(公告)号：US08721846B2
公开(公告)日：2014-05-13
申请号：US11720461
申请日：2005-11-29
申请人： Naoki Yoshii , Yasuhiko Kojima
发明人： Naoki Yoshii , Yasuhiko Kojima
IPC分类号： C23C14/00 , C23C14/32 , C25B9/00 , C25B11/00 , C25B13/00 , H01L21/44 , C23C14/16 , C23C10/06 , C23C14/14 , C23C26/00 , H01L21/285 , H01L21/768 , H01J37/34 , C23C14/34 , C23C10/02
CPC分类号： C23C14/165 , C23C10/02 , C23C10/06 , C23C14/0057 , C23C14/14 , C23C14/345 , C23C26/00 , H01J37/34 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76856 , H01L21/76873
摘要： A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.
摘要翻译：一种成膜方法，包括：在将基板装载到反应室中之后，将基板安装在安装构件上，通过将含有第一金属的化合物的源气体供应到反应室中，将基板的表面上的第一金属的化合物吸附在基板的表面上通过使还原气体与其接触来还原吸附在基板上的第一金属的化合物，从而获得第一金属层，并且使第一金属和第二金属合金化，以通过以下方式获得第一金属和第二金属的合金层：将第二金属注入第一金属层。通过与目标电极进行溅射等离子体接触，第二金属从面向基板的靶电极喷出，目标电极的至少表面由与第一金属不同的第二金属形成。

3. 发明申请

US20120211890A1 METHOD FOR FORMING METAL THIN FILM, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：形成金属薄膜的方法，半导体器件及其制造方法
公开(公告)号：US20120211890A1
公开(公告)日：2012-08-23
申请号：US13364722
申请日：2012-02-02
申请人： Shuji AZUMO , Yasuhiko KOJIMA
发明人： Shuji AZUMO , Yasuhiko KOJIMA
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , C23C16/14 , C23C16/16 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L21/76858 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A metal thin film forming method includes depositing a Ti film on an insulating film formed on a substrate and depositing a Co film on the Ti film. The film forming method further includes modifying a laminated film of the Ti film and the Co film on the insulating film to a metal thin film containing Co3Ti alloy by heating the laminated film in an inert gas atmosphere or a reduction gas atmosphere.
摘要翻译：金属薄膜形成方法包括在形成在基板上的绝缘膜上沉积Ti膜并在Ti膜上沉积Co膜。成膜方法还包括通过在惰性气体气氛或还原气体气氛中加热层叠膜，将绝缘膜上的Ti膜和Co膜的层压膜改性为含有Co 3 Ti合金的金属薄膜。

4. 发明申请

US20120164328A1 FILM FORMATION METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电影形成方法和存储媒体
公开(公告)号：US20120164328A1
公开(公告)日：2012-06-28
申请号：US13054361
申请日：2010-08-26
申请人： Yasuhiko Kojima , Shuji Azumo
发明人： Yasuhiko Kojima , Shuji Azumo
IPC分类号： C23C16/44 , B05D1/36 , C25D5/00
CPC分类号： C23C16/18 , C23C16/45525 , C23C16/52 , C23C16/56 , C23C18/165 , C23C18/1653 , C23C18/1658 , C23C18/166 , C23C18/1678 , C23C18/1696 , C23C18/34 , C23C28/023 , H01L21/28562 , H01L21/76843
摘要： A substrate is transferred to a processing container, and a film formation raw material containing cobalt amidinate and a reducing agent containing a carbonic acid in a vapor phase are introduced into the processing container, thereby a Co film is formed on the substrate.
摘要翻译：将基板转移到处理容器中，将含有脒基的成膜原料和含有气相的碳酸的还原剂引入处理容器中，从而在基板上形成Co膜。

5. 发明授权

US08133811B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium 有权
标题翻译：半导体器件制造方法，半导体器件制造装置，计算机程序和存储介质
公开(公告)号：US08133811B2
公开(公告)日：2012-03-13
申请号：US12374228
申请日：2007-06-15
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/44
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/18 , H01L21/76843 , H01L21/76855 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layer 13 whereupon the oxide layer 13a is formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layer 13a is converted into an alloy layer 13b of a metal and copper which constitute the barrier metal layer 13.
摘要翻译：制造抑制有机杂质层的形成并且对铜膜和作为基底的金属具有优异的粘附性的半导体器件。涂覆有由氧化倾向高的金属形成的阻挡金属层（基膜）13的基板（晶片W）如钛，被放置在处理室中。在开始供给水蒸气之后，供给包含铜有机化合物（例如Cu（hfac）TMVS）的原料气体，并且在阻挡金属层13的表面上形成铜膜于是氧化物层13a由水蒸汽形成。然后，对晶片W进行热处理，将氧化物层13a转换成构成阻挡金属层13的金属和铜的合金层13b。

6. 发明授权

US08075698B2 Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing 失效
标题翻译：衬底处理单元，检测衬底处理单元的清洁终点的方法以及检测衬底处理终点的方法
公开(公告)号：US08075698B2
公开(公告)日：2011-12-13
申请号：US10525797
申请日：2003-08-28
申请人： Hiroshi Kannan , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
发明人： Hiroshi Kannan , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
IPC分类号： B08B7/04
CPC分类号： C23C16/4412 , C23C16/4405 , C23C16/52 , H01L21/67028 , H01L21/67253 , H01L22/26
摘要： A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.
摘要翻译：基板处理单元包括用于接收基板的处理容器，用于向处理容器提供清洁气体以清洁处理容器内部的清洁气体供应系统，用于排出处理容器的排气器，用于排出处理容器的操作状态检测器检测排气器的运行状态，以及终点检测器，用于根据来自运行状态检测器的检测结果来检测清洗的终点。

7. 发明申请

US20110174630A1 FILM FORMATION METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：电影形成方法和存储媒体
公开(公告)号：US20110174630A1
公开(公告)日：2011-07-21
申请号：US13054331
申请日：2010-08-27
申请人： Yasuhiko Kojima , Shuji Azumo
发明人： Yasuhiko Kojima , Shuji Azumo
IPC分类号： C23C28/02
CPC分类号： C25D7/123 , C25D3/38 , C25D5/34 , C25D17/001 , H01L21/28556 , H01L21/2885 , H01L21/76873
摘要： A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.
摘要翻译：成膜方法包括在基板的表面上准备形成Co膜作为种子层的基板，向基板施加负电压使得Co的表面电位低于Co的氧化电位，并且在当将负电压施加到基板上时，将Co膜浸入主要含有硫酸铜溶液的镀液中，由此通过电镀在基板的Co膜上形成Cu膜。

8. 发明申请

US20090214758A1 A PROCESSING METHOD FOR PROCESSING A SUBSTRATE PLACED ON A PLACEMENT STAGE IN A PROCESS CHAMBER 审中-公开
标题翻译：用于处理位于过程室中的放置阶段的基板的处理方法
公开(公告)号：US20090214758A1
公开(公告)日：2009-08-27
申请号：US12421271
申请日：2009-04-09
申请人： Hiroshi KANNAN , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
发明人： Hiroshi KANNAN , Tadahiro Ishizaka , Yasuhiko Kojima , Yasuhiro Oshima , Takashi Shigeoka
IPC分类号： C23C16/52
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45557
摘要： In a processing apparatus, a process gas including a source gas (TiCl4, NH3) and an inert gas (N2) is supplied into a process chamber (2). A pressure meter (6) detects a pressure in the process chamber (2) so as to control an amount of flow of the process gas supplied to the process chamber (2) based on a result of the detection. A source gas is purged by the inert gas. By maintaining the amount of flow of the source gas constant and controlling the amount of flow of the inert gas, an amount of flow the entire process gas is controlled so as to maintain a pressure in the process chamber (2) constant. Since a time spent on evacuation of the source gas is reduced, a time for switching the source gas is reduced. Additionally, a temperature of a surface of a substrate during processing can be maintained constant.
摘要翻译：在处理装置中，将包括源气体（TiCl 4，NH 3）和惰性气体（N 2）的处理气体供给到处理室（2）中。压力计（6）检测处理室（2）中的压力，以便根据检测结果控制供给处理室（2）的处理气体的流量。源气体被惰性气体吹扫。通过保持源气体的流量恒定并控制惰性气体的流量，控制整个处理气体的流量，以保持处理室（2）中的压力恒定。由于减少了用于排出源气体的时间，因此减少了源气体的切换时间。此外，可以保持处理期间的基板表面的温度恒定。

9. 发明申请

US20090181538A1 FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM 失效
标题翻译：薄膜成型方法，薄膜成型装置和储存介质
公开(公告)号：US20090181538A1
公开(公告)日：2009-07-16
申请号：US12374216
申请日：2007-07-17
申请人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
发明人： Yasuhiko Kojima , Taro Ikeda , Tatsuo Hatano
IPC分类号： H01L21/285 , B05C11/00
CPC分类号： C23C16/18 , H01L21/28556 , H01L21/76877 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.
摘要翻译：一种成膜方法具有基板放置步骤，其中将基板以气密状态放置在处理室中; 第一成膜步骤，其中处理室被供应水蒸汽和包含铜的有机化合物的原料气体，并且在基板上形成铜的附着层; 排气步骤，其中处理室中的水蒸气和原料气体被排出; 以及第二成膜步骤，其中处理室仅用原料气体再供给，并且在附着层上进一步形成铜膜。

10. 发明申请

US20080219902A1 REACTOR 有权
标题翻译：反应堆
公开(公告)号：US20080219902A1
公开(公告)日：2008-09-11
申请号：US12125339
申请日：2008-05-22
申请人： Kenji Sakai , Yasuhiko Kojima
发明人： Kenji Sakai , Yasuhiko Kojima
IPC分类号： F28D7/00
CPC分类号： B01J19/02 , B01J19/0013 , B01J19/0053 , B01J19/2425 , B01J2219/00092 , B01J2219/00256 , B01J2219/0286 , F28D7/06 , F28F9/0219 , F28F9/0229 , F28F9/18 , F28F19/06 , F28F2275/20
摘要： A reactor including a reactor vessel and heat exchange tubes provided in the reactor vessel. The reactor vessel includes a tubesheet and is configured to receive a reaction fluid. The tubesheet has a first plate member configured to contact the reaction fluid and a second plate member configured to not contact the reaction fluid. Heat exchange tubes are provided in the reactor vessel and fixed to the first plate member. The heat exchange tubes are configured to receive a heat exchange medium. At least a portion of the first plate member configured to contact the reaction fluid is made of a metal that has a high corrosion-resistance against the reaction liquid, and the second plate member is made of a metal that has a low corrosion-resistance against the reaction liquid. The second plate member is detachably fixed to a remainder of the reactor vessel.
摘要翻译：包括反应器容器和设置在反应器容器中的热交换管的反应器。反应器容器包括管板，并且构造成容纳反应流体。管板具有构造成接触反应流体的第一板构件和构造成不接触反应流体的第二板构件。热交换管设置在反应器容器中并固定到第一板构件。热交换管被构造成接收热交换介质。构成为接触反应流体的第一板状构件的至少一部分由对反应液体具有高耐腐蚀性的金属制成，第二板构件由耐腐蚀性低的金属制成反应液体。第二板构件可拆卸地固定到反应器容器的其余部分。

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