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1. 发明申请

US20050227500A1 Method for producing material of electronic device 审中-公开
标题翻译：电子设备材料的制造方法
公开(公告)号：US20050227500A1
公开(公告)日：2005-10-13
申请号：US10509372
申请日：2003-03-31
申请人： Takuya Sugawara , Yoshihide Tada , Tomohiro Ohta
发明人： Takuya Sugawara , Yoshihide Tada , Tomohiro Ohta
IPC分类号： C23C16/511 , H01J37/32 , H01L21/02 , H01L21/316 , H01L21/336
CPC分类号： H01L21/02274 , C23C16/511 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/0217 , H01L21/02172 , H01L21/31604 , H01L21/31662 , H01L21/31691 , H01L28/56
摘要： A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed.
摘要翻译：在包含至少含有成膜物质的气体和罕见的气体的工艺气体的存在下，通过使用具有多个狭缝的平面天线构件，通过使用基于微波照射的等离子体，在电子器件基板的表面上形成膜加油站。可以形成能够形成具有良好电性能的绝缘膜的电子器件基板的绝缘膜。

2. 发明授权

US5552181A Method for supplying liquid material and process for forming thin films using the liquid material supplying method 失效
标题翻译：使用液体材料供给方法提供液体材料的方法和用于形成薄膜的工艺
公开(公告)号：US5552181A
公开(公告)日：1996-09-03
申请号：US170789
申请日：1993-12-21
申请人： Eiichi Kondoh , Toru Mitomo , Hiroshi Yamamoto , Tomohiro Ohta
发明人： Eiichi Kondoh , Toru Mitomo , Hiroshi Yamamoto , Tomohiro Ohta
IPC分类号： C23C16/20 , C23C16/448 , H01L21/205 , H01L21/31 , H01L21/3205 , H01L23/52 , C23C16/00
CPC分类号： C23C16/4482
摘要： A method of supplying, in a gaseous phase, a material which is in a viscous liquid phase at normal temperature. The viscous liquid material is provided in a bubbler and the pressure of the vessel is maintained below atmospheric pressure. A carrier gas is supplied through a nozzle opening in the liquid material inside the vessel. The carrier gas is temporarily dissolved in the liquid and then released to form fine bubbles into which the liquid material is vaporized, so that the vapor of the material is supplied together with the carrier gas.
摘要翻译：在气相中以常温下处于粘稠液相的材料的方法。将粘性液体材料设置在起泡器中，并将容器的压力保持在大气压以下。载气通过容器内的液体材料中的喷嘴开口供给。载气暂时溶解在液体中，然后释放，形成液体物质蒸发的微小气泡，使得材料的蒸气与载气一起供给。

3. 发明授权

US5532191A Method of chemical mechanical polishing planarization of an insulating film using an etching stop 失效
标题翻译：使用蚀刻停止层的绝缘膜的化学机械抛光平面化方法
公开(公告)号：US5532191A
公开(公告)日：1996-07-02
申请号：US216410
申请日：1994-03-23
申请人： Tadashi Nakano , Nobuyoshi Sato , Tomohiro Ohta , Hiroshi Yamamoto
发明人： Tadashi Nakano , Nobuyoshi Sato , Tomohiro Ohta , Hiroshi Yamamoto
IPC分类号： H01L21/3105
CPC分类号： H01L21/31053
摘要： A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.
摘要翻译：平版化绝缘膜的方法包括制备半导体衬底的步骤; 用有机溶剂处理基板的不平坦表面; 通过使用有机硅化合物作为原料的化学气相沉积或沉积SOG在基板的这样处理的表面上形成绝缘膜，形成化学机械抛光蚀刻速度比绝缘膜慢的蚀刻停止膜通过使用无机硅化合物作为原料进行化学气相沉积来沉积氧化硅或氮氧化硅; 并且通过使用该蚀刻停止膜的化学机械抛光工艺来蚀刻形成在基板的不平坦表面上的绝缘膜的至少一部分。

4. 发明授权

US5308651A Photochemical vapor deposition process 失效
标题翻译：光化学气相沉积工艺
公开(公告)号：US5308651A
公开(公告)日：1994-05-03
申请号：US973058
申请日：1992-11-06
申请人： Tomohiro Ohta , Hiroaki Sasaki , Tohru Mitomo , Naoki Kubota
发明人： Tomohiro Ohta , Hiroaki Sasaki , Tohru Mitomo , Naoki Kubota
IPC分类号： C23C16/48 , H01L21/268 , B05D3/06
CPC分类号： H01L21/268 , C23C16/483
摘要： As to technical subject matters of attempting increase of deposition rate and improvement of film quality and removing restriction of light source and source gas in the photo CVD process, the promotion of photolysis of the source gas is achieved by use of a pulse laser beam together with a continuous light, application of plural laser beams wherein each pulse of at least one second pulse laser beam is irradiated into each interval between a pulse and the next pulse in a first lase beam, and further introduction of an additive gas in addition to the source gas into a reaction vessel and particularly the provision of photo CVD process advantageously adaptable for the production of semiconductor is realized.
摘要翻译：关于在光CVD法中试图提高沉积速率和提高膜质量以及去除光源和源气体的限制的技术主题，通过使用脉冲激光束和连续的光，应用多个激光束，其中至少一个第二脉冲激光束的每个脉冲被照射在第一激光束中的脉冲和下一个脉冲之间的每个间隔中，并且除了源之外还进一步引入添加气体气体进入反应容器，特别是提供有利于生产半导体的光CVD技术。

5. 发明授权

US5117916A Sprinkler head and operation monitor therefor 失效
标题翻译：喷头和操作监视器
公开(公告)号：US5117916A
公开(公告)日：1992-06-02
申请号：US682664
申请日：1991-04-09
申请人： Tomohiro Ohta , Takahiro Nakajima
发明人： Tomohiro Ohta , Takahiro Nakajima
IPC分类号： A62C37/10 , A62C37/21 , A62C37/50 , G08B17/02
CPC分类号： G08B17/02 , A62C37/10 , A62C37/21 , A62C37/50
摘要： A sprinkler head of the present invention comprises a cover plate which is operated to fall down at a temperature lower than the operating temperature of the sprinkler head body and a switching unit provided on the body side of the sprinkler head so as to detect the falling of the cover plate and send a fire detection signal.A sprinkler head comprises a switching unit provided on the side of the sprinkler head body so as to send a fire detection signal when the unit is operated at a temperature lower than the operating temperature of the sprinkler head and send a sprinkler head operation signal when it is returned to a non-operating state by detection of the firewater discharged by the operation of the sprinkler head after the fire detection signal has been sent.An operation monitor for the sprinkler head of the present invention decides that the sprinkler head is operated and indicates the operation when it receives a sprinkler head operation signal from a switching unit provided on the sprinkler head and a detection signal from a water flow detector provided on piping extending to the sprinkler head.The structure in which the sprinkler head also serves as a fire detector enables a reduction of the cost of fire extinguishing equipment and the simplification of the installation work thereof, as well as an improvement in the appearance. It is also possible to detect the discharge of water from the sprinkler head without giving false information.
摘要翻译：本发明的喷水头包括盖板，该盖板在比喷洒头主体的操作温度低的温度下操作，以及设置在喷头的主体侧的切换单元，以便检测喷洒头的下落盖板发送火灾探测信号。喷洒头包括设置在喷头主体一侧的开关单元，以便当该单元在比喷洒头的操作温度低的温度下操作时发送火情检测信号，并且当喷头在发送火灾检测信号之后，通过检测喷洒头的操作而排出的消防水，返回到非操作状态。本发明的喷洒头的操作监视器判定喷洒头被操作并且当接收到来自设置在喷洒头上的切换单元的喷洒头操作信号和来自设置在喷洒头上的水流检测器的检测信号时，指示操作管道延伸到喷头。喷淋头也用作火灾探测器的结构能够降低灭火设备的成本和简化其安装工作以及外观的改善。也可以在不给出虚假信息的情况下从喷头读出水分。

6. 发明授权

US07476619B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07476619B2
公开(公告)日：2009-01-13
申请号：US10543378
申请日：2003-12-26
申请人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
发明人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76862
摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.
摘要翻译：本发明的目的是通过在半导体器件的制造工艺中使用超临界状态的介质，可以将Cu扩散防止膜和Cu膜嵌入到高纵横比的精细图案中。本发明的目的是通过一种基板处理方法实现的，该方法包括：第一步骤，通过将含有超临界状态的第一介质的第一处理介质提供到基板上来处理基板;第二步骤，在所述基板上形成Cu扩散防止膜通过将含有超临界状态的第二介质的第二处理介质供给到所述基板上，以及通过将含有超临界状态的第三介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序来进行。

7. 发明申请

US20050260846A1 Substrate processing method, semiconductor device production method, and semiconductor device 审中-公开
标题翻译：基板加工方法，半导体装置的制造方法以及半导体装置
公开(公告)号：US20050260846A1
公开(公告)日：2005-11-24
申请号：US11190127
申请日：2005-07-27
申请人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
发明人： Eiichi Kondoh , Vincent Vezin , Kenichi Kubo , Yoshinori Kureishi , Tomohiro Ohta
IPC分类号： C23C18/02 , C23C18/04 , C23C18/18 , C25D7/12 , H01L21/304 , H01L21/768 , H01L21/20 , H01L21/4763
CPC分类号： H01L21/76843 , C23C18/1865 , C23C18/1882 , C23C18/1893 , C25D7/12 , H01L21/76807 , H01L21/76862 , H01L21/76877
摘要： A substrate processing method is disclosed that, when forming a copper film on a miniaturized pattern with a copper diffusion prevention film being formed thereon, allows cleaning the copper diffusion prevention film on a substrate by using a supercritical medium, and allows the copper film to be formed by using the supercritical medium while preventing void occurrence and ensuring good adhesiveness with the miniaturized pattern. The substrate processing method includes a first step of supplying a first processing medium including a supercritical medium on a substrate and cleaning a film including a metal on a surface of the substrate; and a second step of supplying a second processing medium including the supercritical medium on the substrate, and forming a copper film.
摘要翻译：公开了一种基板处理方法，当在其上形成有铜扩散防止膜的小型图案上形成铜膜时，可以通过使用超临界介质来清洗基板上的铜扩散防止膜，并且允许铜膜为通过使用超临界介质形成，同时防止空隙发生并确保与小型化图案的良好粘附性。基板处理方法包括：第一步骤，在基板上提供包含超临界介质的第一处理介质，并在基板的表面上清洗包含金属的膜; 以及在基板上供给包含超临界介质的第二处理介质，形成铜膜的第二工序。

8. 发明授权

US5637534A Method of manufacturing semiconductor device having multilevel interconnection structure 失效
标题翻译：制造具有多层互连结构的半导体器件的方法
公开(公告)号：US5637534A
公开(公告)日：1997-06-10
申请号：US172717
申请日：1993-12-27
申请人： Nobuyuki Takeyasu , Hiroshi Yamamoto , Yumiko Kawano , Eiichi Kondoh , Tomoharu Katagiri , Tomohiro Ohta
发明人： Nobuyuki Takeyasu , Hiroshi Yamamoto , Yumiko Kawano , Eiichi Kondoh , Tomoharu Katagiri , Tomohiro Ohta
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L21/44
CPC分类号： H01L23/53223 , H01L21/76802 , H01L21/76879 , H01L23/5226 , H01L2924/0002
摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.
摘要翻译：半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

9. 发明授权

US5627345A Multilevel interconnect structure 失效
标题翻译：多层互连结构
公开(公告)号：US5627345A
公开(公告)日：1997-05-06
申请号：US198788
申请日：1994-02-18
申请人： Hiroshi Yamamoto , Tomohiro Ohta , Nobuyuki Takeyasu
发明人： Hiroshi Yamamoto , Tomohiro Ohta , Nobuyuki Takeyasu
IPC分类号： H01L23/522 , H01L23/532 , H05K1/09 , H05K1/14
CPC分类号： H01L21/76852 , H01L21/76885 , H01L23/5226 , H01L23/53223 , H01L2924/0002 , Y10T29/49126 , Y10T29/49165
摘要： A multilevel interconnect structure for use in a semiconductor device includes a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. An interlayer insulating film is deposited on the lower metal wiring and a via hole is formed in the interlayer insulating film. A plug made of aluminum or aluminum alloy is formed in the via hole. An upper metal wiring has an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. The plug directly contacts the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability.
摘要翻译：用于半导体器件的多层互连结构包括具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的下金属布线。层间绝缘膜沉积在下金属布线上，并且在层间绝缘膜中形成通孔。在通孔中形成由铝或铝合金制成的塞子。上金属布线具有铝或铝合金膜和高熔点金属或高熔点金属合金膜。插头直接接触下部和上部金属布线中的至少一个的铝或铝合金膜以降低通孔电阻而不降低电迁移可靠性。

10. 发明授权

US5486492A Method of forming multilayered wiring structure in semiconductor device 失效
标题翻译：在半导体器件中形成多层布线结构的方法
公开(公告)号：US5486492A
公开(公告)日：1996-01-23
申请号：US142971
申请日：1993-10-29
申请人： Hiroshi Yamamoto , Nobuyuki Takeyasu , Tomohiro Ohta
发明人： Hiroshi Yamamoto , Nobuyuki Takeyasu , Tomohiro Ohta
IPC分类号： H01L21/768 , H01L21/285 , H01L21/3065
CPC分类号： H01L21/76865 , H01L21/76805 , H01L21/76843 , H01L21/76844 , H01L21/76862 , H01L21/76879
摘要： A method of forming a via structure having good characteristics in a semiconductor device having a multilayered wiring structure includes forming a thin film including a high melting point metal or a high melting point metal compound on at least the side wall of a via hole before a via plug including Al or an Al alloy is formed.
摘要翻译：在具有多层布线结构的半导体器件中形成具有良好特性的通孔结构的方法包括在通孔之前至少在通孔的侧壁上形成包括高熔点金属或高熔点金属化合物的薄膜形成包括Al或Al合金的塞子。

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