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1. 发明专利

JP2012138498A Cleaning method 审中-公开
标题翻译：清洁方法
公开(公告)号：JP2012138498A
公开(公告)日：2012-07-19
申请号：JP2010290528
申请日：2010-12-27
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： KODERA MASAKO , O CHIKAAKI , KAJITA SHINJI
IPC分类号： H01L21/304
CPC分类号： B08B1/04 , H01L21/02065 , H01L21/67046
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method capable of efficiently removing a residue from a semiconductor substrate after polishing processing.SOLUTION: A cleaning method of an embodiment cleans a residue on a semiconductor substrate with a rotating roll brush. This method includes a first cleaning step of pressing the roll brush against the semiconductor substrate at a first pressure of 7.35 kPa or less and cleaning the residue on the semiconductor substrate and a second cleaning step of pressing the roll brush against the semiconductor substrate at a second pressure of greater than 7.35 kPa and cleaning the residue on the semiconductor substrate.
摘要翻译：要解决的问题：提供一种能够在抛光处理之后有效地从半导体衬底去除残留物的清洁方法。解决方案：实施例的清洁方法用旋转辊刷清洁半导体衬底上的残留物。该方法包括：第一清洗步骤，其在7.35kPa以下的第一压力下将辊刷压靠在半导体基板上，并且清洗半导体基板上的残留物;以及第二清洗步骤，在第二清洗步骤中将辊子刷抵靠在半导体基板上压力大于7.35kPa并清洗半导体衬底上的残留物。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010238850A Method of cleaning substrate 有权
标题翻译：清洗基板的方法
公开(公告)号：JP2010238850A
公开(公告)日：2010-10-21
申请号：JP2009084204
申请日：2009-03-31
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： OIKAWA FUMITOSHI , HAMADA TOSHIMI , KAJITA SHINJI , KODERA MASAKO , TAKAHASHI TAKUMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To achieve cleaning with enhanced cleaning capability by effectively using two-liquid jet cleaning even when residues tightly sticks on a substrate and sufficient cleaning performance cannot be obtained only by merely applying existent two-liquid jet cleaning in the case of cleaning after CMP etc. SOLUTION: The method of cleaning the substrate, in which contaminants sticking on the substrate are cleaned, includes: performing processing for increasing the absolute value of a zeta potential of the substrate and the contaminants sticking on the substrate; and then carrying out contact cleaning for cleaning a surface of the substrate with a cleaning tool in contact with the surface of the substrate; and carrying out two-liquid jet cleaning for cleaning the substrate surface by jetting a gas and a liquid to the substrate surface simultaneously. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了通过有效地使用双液体喷射清洁来实现具有增强的清洁能力的清洁，即使残留物紧贴在基材上并且仅通过仅将现有的双液体喷射清洗应用于基材中就不能获得足够的清洁性能 CMP等后清洗的情况。解决方案：清洁粘贴在基材上的污染物的基材清洗方法包括：进行加工以提高基材ζ电位的绝对值和粘附在其上的污染物基材; 然后用与衬底表面接触的清洁工具进行用于清洁衬底表面的接触清洁; 并且通过将气体和液体同时喷射到基板表面进行用于清洁基板表面的双液喷射清洗。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2017118146A スクラバー有权
公开(公告)号：JP2017118146A
公开(公告)日：2017-06-29
申请号：JP2017051113
申请日：2017-03-16
申请人：株式会社荏原製作所 , Ebara Corp , 株式会社東芝 , Toshiba Corp
发明人： ISHII YU , KAWASAKI HIROYUKI , NAGAOKA KENICHI , ITO KENYA , KODERA MASAKO , TOMITA HIROSHI , NISHIOKA TAKESHI
IPC分类号： H01L21/304 , B08B1/04 , B24B21/06
摘要：【課題】基板の表面および/または裏面に付着した異物を高い除去率で効率よく除去することができるスクラバーを提供する。【解決手段】スクラバー50は、その内部に基板Wの第1の面に摺接させて第1の面の表面処理を行うテープ状の複数のスクラブ部材61と、複数のスクラブ部材61をそれぞれ繰り出す複数のテープ繰り出しリール64と、複数のスクラブ部材61をそれぞれ巻き取る複数のテープ巻き取りリール65と、複数のテープ巻き取りリール65がそれぞれ連結された複数のテープ巻き取り軸67とを備え、スクラバー50は、スクラバー50の軸心周りに複数のスクラブ部材61を回転させながら複数のスクラブ部材61を基板Wの第1の面に摺接させる。【選択図】図8

4. 发明专利

JP2013172019A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2013172019A
公开(公告)日：2013-09-02
申请号：JP2012035365
申请日：2012-02-21
申请人： Ebara Corp , 株式会社荏原製作所 , Toshiba Corp , 株式会社東芝
发明人： ISHII YU , KAWASAKI HIROYUKI , NAGAOKA KENICHI , ITO KENYA , KODERA MASAKO , TOMITA HIROSHI , NISHIOKA TAKESHI
IPC分类号： H01L21/304 , B08B1/04
CPC分类号： B08B1/001 , H01L21/67046 , H01L21/67051 , H01L21/68728
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which efficiently removes foreign objects adhering to a front surface and/or a rear surface of a substrate achieving a high removal ratio.SOLUTION: A substrate processing apparatus includes: a scrubber 50 causing a scrub member 61 to slidably contact with a first surface of a substrate W to perform surface treatment of the substrate W; a static pressure support mechanism 90 supporting a second surface of the substrate W, which is the opposite side of the first surface, using fluid pressure in a non-contact manner; a cleaning part 27 cleaning the substrate W on which the surface treatment is performed by the scrubber 50; and a dry part 100 drying the cleaned substrate W. The scrubber 50 rotates the scrub member 61 around its shaft center and causes the scrub member 61 to slidably contact with the first surface of the substrate W.
摘要翻译：要解决的问题：提供一种能够有效地去除附着在基板的前表面和/或后表面上的异物的基板处理装置，实现高的去除率。解决方案：基板处理装置包括：洗涤器50，其产生擦洗构件61与衬底W的第一表面滑动接触以对衬底W进行表面处理; 以非接触方式使用流体压力支撑作为第一表面的相对侧的基板W的第二表面的静压支撑机构90; 清洁部分27，清洁由洗涤器50执行表面处理的基板W; 和干燥部分100干燥清洁的基底W.洗涤器50围绕其轴心旋转擦洗部件61，并使擦洗部件61与基板W的第一表面滑动接触。

5. 发明专利

JP2004312036A Device and method of polishing 有权
标题翻译：装置和抛光方法
公开(公告)号：JP2004312036A
公开(公告)日：2004-11-04
申请号：JP2004177568
申请日：2004-06-15
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： OKUMURA KATSUYA , AOKI RIICHIRO , YAJIMA HIROMI , KODERA MASAKO , MISHIMA SHIRO , SHIGETA ATSUSHI , HIROSE MASAYOSHI , KIMURA NORIO , ISHIKAWA SEIJI
IPC分类号： B24B37/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a device and a method of polishing capable of carrying out a clean and dried object after the object for polishing is polished, cleaned and dried. SOLUTION: There are provided a polishing device which carries out the clean and dried object S for polishing, after the object S for polishing is carried in and cleaned, wherein the polishing sections 13, 14 which polish the object S, a cleaning section 15 which cleans and dries the object S for polishing after polished and a thickness gauge which measures the thickness of the object S for polishing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供抛光，清洁和干燥抛光后的抛光对象的清洁和干燥物体的抛光装置和方法。提供一种抛光装置，其在进行用于抛光的物体S被进行和清洁之后，执行用于抛光的清洁和干燥物体S，其中抛光物体S的抛光部分13,14清洁清洗干燥被抛光对象物S的部分15和测量被研磨物S的厚度的厚度计。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004158883A Semiconductor wafer polishing apparatus and its polishing method 有权
公开(公告)号：JP2004158883A
公开(公告)日：2004-06-03
申请号：JP2004037458
申请日：2004-02-13
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： SAITO HARUMITSU , TSUJIMURA MANABU , YAJIMA HIROMI , HIUGA KAZUAKI , KODAMA SHOICHI , IMOTO YUKIO , AOKI RIICHIRO , KODERA MASAKO , SHIGETA ATSUSHI , MISHIMA SHIRO , KONO YOSHISUKE
IPC分类号： B24B37/04 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer polishing apparatus which can be located in a clean room and in which the semiconductor wafer is transferred to the next process by a wafer carrier used in the clean room generally after cleaning and drying the polished semiconductor wafer without contaminating the clean room, and also to provide its polishing method.
SOLUTION: In the semiconductor wafer polishing apparatus, a polishing section 2 for polishing the semiconductor wafer 4 and a cleaning section 30 for cleaning the semiconductor wafer 4 are contained in a box 1 having side walls. A partition wall 22, which separates the polishing section 2 and the cleaning section 30, and a transferring mechanism 24 which transfers the polished semiconductor wafer 4 from the polishing section 2 to the cleaning section 30 through the opening 22a of the partition wall 22, are positioned in the box 1. The box is rectangularly flat, and a cassette 17 holding the semiconductor wafer 4 before polishing and a cassette 45 containing the semiconductor wafer 4 after polishing are located on the same side of the box 1.
COPYRIGHT: (C)2004,JPO

7. 发明专利

JP2006114861A Polishing apparatus and polishing method 审中-公开
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2006114861A
公开(公告)日：2006-04-27
申请号：JP2005024182
申请日：2005-01-31
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KODERA MASAKO , MOCHIZUKI NOBUHIRO , FUKUDA AKIRA , KODERA AKIRA , HIYAMA HIROKUNI , TSUJIMURA MANABU
IPC分类号： H01L21/304 , B24B37/00 , B24B53/017 , B24B53/02 , B24B57/02 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/52 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a polishing apparatus and a polishing method which can prevent defects of wiring when an insulating material having a low mechanical strength is used. SOLUTION: The polishing apparatus comprises a polishing pad 9, a wafer holder 23 which polishes a wafer W with the wafer W slidably brought into contact with the polishing pad 9, and a dresser 33 which dresses the polishing pad 9 so as to increase the actual contact area between the polishing pad 9 and the wafer W. As a configuration example, the dresser 33 is configured to dress the polishing pad 9 so that multiple projections 9a formed on a surface of the polishing pad 9 have substantially the same height. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供当使用具有低机械强度的绝缘材料时能够防止布线缺陷的抛光装置和抛光方法。解决方案：抛光装置包括抛光垫9，晶片W抛光晶片W与晶片W可滑动地与抛光垫9接触的晶片保持器23和修整器33，该修整器33将抛光垫9装饰成增加抛光垫9和晶片W之间的实际接触面积。作为构造例，修整器33被构造成对抛光垫9进行打磨，使得形成在抛光垫9的表面上的多个突起9a具有基本上相同的高度。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2004273961A Cleaning device of metal wiring forming substrate 审中-公开
公开(公告)号：JP2004273961A
公开(公告)日：2004-09-30
申请号：JP2003065845
申请日：2003-03-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KODERA MASAKO , ITO KENYA , KAMEZAWA MASAYUKI , HAMADA TOSHIMI , KATAKABE ICHIRO
IPC分类号： H01L23/52 , B08B1/04 , B08B3/02 , B08B3/04 , B08B3/08 , B08B3/12 , C23G3/00 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3205
CPC分类号： H01L21/67173 , B08B1/04 , B08B3/02 , B08B3/04 , B08B3/08 , B08B3/12 , C23G3/00 , H01L21/67046 , H01L21/67051 , H01L21/67057 , H01L21/67219
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device to restrict a corrosion of a wiring formed of aluminium or its alloy on a substrate.
SOLUTION: The cleaning device of this metal wiring forming substrate has a grasping mechanism for holding the substrate, a cleaning mechanism for cleaning the substrate and a functional water supply mechanism. A surface of the substrate is cleaned with the functional water supplied from the functional water supply mechanism to the cleaning mechanism.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2007194540A Method for manufacturing semiconductor device, and polishing apparatus 审中-公开
标题翻译：制造半导体器件的方法和抛光装置
公开(公告)号：JP2007194540A
公开(公告)日：2007-08-02
申请号：JP2006013563
申请日：2006-01-23
申请人： Toshiba Corp , 株式会社東芝
发明人： KODERA MASAKO
IPC分类号： H01L21/304 , B24B37/00 , H01L21/3205 , H01L21/321 , H01L21/768
CPC分类号： H01L21/76843 , C25F3/02 , H01L21/3212 , H01L21/32125 , H01L21/7684
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of suppressing corrosion on an interface between a wire and barrier metal. SOLUTION: The semiconductor device manufacturing method is provided with a barrier metal film forming process (S108) for forming a barrier metal film on a substrate on which an aperture is formed; a plating process (S112) for forming a copper-containing film on the barrier metal film after forming the barrier metal film on the surface of the substrate and the inner wall of the aperture part; and a polishing process (S114) for polishing the copper-containing film and the barrier metal film, while applying voltage to the substrate in a state that the copper-containing film and the barrier metal film are exposed. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制线和阻挡金属之间的界面上的腐蚀的半导体器件制造方法。解决方案：半导体器件制造方法设置有用于在其上形成有孔的基板上形成阻挡金属膜的阻挡金属膜形成工艺（S108）在所述基板的表面和所述开口部的内壁形成所述阻挡金属膜之后，在所述阻挡金属膜上形成含铜膜的电镀工序（S112）以及在含铜膜和阻挡金属膜露出的状态下向基板施加电压的同时研磨含铜膜和阻挡金属膜的研磨工序（S114）。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2009074812A Device and method for analyzing membrane sample 审中-公开
标题翻译：用于分析膜样品的装置和方法
公开(公告)号：JP2009074812A
公开(公告)日：2009-04-09
申请号：JP2007241619
申请日：2007-09-18
申请人： Horiba Ltd , Toshiba Corp , 株式会社堀場製作所 , 株式会社東芝
发明人： KAKINUMA SHIGERU , KODERA MASAKO
IPC分类号： G01N21/62 , G01B11/06 , G01B15/02 , H01J37/252 , H01J37/256 , H01J37/285
摘要： PROBLEM TO BE SOLVED: To remove the effect of the peak shift caused by membrane thickness.
SOLUTION: The membrane sample analyzer includes an electron beam irradiation part for irradiating a membrane sample W with an electron beam, a light detection part for spectrally diffracting the light (luminescence) L emitted from the membrane sample W by irradiation with the electron beam to detect the same, a peak wavelength calculation part 41 for receiving the output signal from the light detection part to calculate a measuring peak wavelength being the peak wavelength of the spectrum of the light (luminescence) L, a standard data memory part D1 for storing standard data representing the relationship between the membrane thickness obtained by a standard sample known in membrane thickness and the standard peak wavelength being the peak wavelength in the membrane thickness, a standard peak wavelength setting part 42 for calculating the standard peak wavelength with respect to the membrane thickness of the membrane sample W from the standard data and an analyzing part 43 for analyzing the state of the membrane sample W using the measuring peak wavelength and the standard peak wavelength as parameters.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：消除由膜厚度引起的峰值偏移的影响。解决方案：膜样品分析仪包括用于用电子束照射膜样品W的电子束照射部分，用于通过照射电子对从膜样品W发射的光（发光）L进行光谱衍射的光检测部分用于检测相同光束的峰值波长计算部分41，用于接收来自光检测部分的输出信号的峰值波长计算部分41计算出测量峰值波长为光（发光）L光谱的峰值波长;标准数据存储部分D1，存储表示通过膜厚度已知的标准样品获得的膜厚与膜厚中的峰值波长的标准峰值波长之间的关系的标准数据，用于计算相对于膜厚的标准峰值波长的标准峰值波长设定部42 来自标准数据的膜样品W的膜厚度和用于分析的分析部件43 使用测量峰值波长和标准峰值波长作为参数来进行膜样品W的状态。版权所有（C）2009，JPO＆INPIT

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