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1. 发明专利

JP2010238850A Method of cleaning substrate 有权
标题翻译：清洗基板的方法
公开(公告)号：JP2010238850A
公开(公告)日：2010-10-21
申请号：JP2009084204
申请日：2009-03-31
申请人： Ebara Corp , Toshiba Corp , 株式会社東芝 , 株式会社荏原製作所
发明人： OIKAWA FUMITOSHI , HAMADA TOSHIMI , KAJITA SHINJI , KODERA MASAKO , TAKAHASHI TAKUMI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To achieve cleaning with enhanced cleaning capability by effectively using two-liquid jet cleaning even when residues tightly sticks on a substrate and sufficient cleaning performance cannot be obtained only by merely applying existent two-liquid jet cleaning in the case of cleaning after CMP etc. SOLUTION: The method of cleaning the substrate, in which contaminants sticking on the substrate are cleaned, includes: performing processing for increasing the absolute value of a zeta potential of the substrate and the contaminants sticking on the substrate; and then carrying out contact cleaning for cleaning a surface of the substrate with a cleaning tool in contact with the surface of the substrate; and carrying out two-liquid jet cleaning for cleaning the substrate surface by jetting a gas and a liquid to the substrate surface simultaneously. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了通过有效地使用双液体喷射清洁来实现具有增强的清洁能力的清洁，即使残留物紧贴在基材上并且仅通过仅将现有的双液体喷射清洗应用于基材中就不能获得足够的清洁性能 CMP等后清洗的情况。解决方案：清洁粘贴在基材上的污染物的基材清洗方法包括：进行加工以提高基材ζ电位的绝对值和粘附在其上的污染物基材; 然后用与衬底表面接触的清洁工具进行用于清洁衬底表面的接触清洁; 并且通过将气体和液体同时喷射到基板表面进行用于清洁基板表面的双液喷射清洗。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2013162044A Substrate cleaning device and cleaning method 有权
标题翻译：基板清洁装置和清洁方法
公开(公告)号：JP2013162044A
公开(公告)日：2013-08-19
申请号：JP2012024492
申请日：2012-02-07
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMADA TOSHIMI , ISHIBASHI TOMOATSU
IPC分类号： H01L21/304 , B08B1/04
摘要： PROBLEM TO BE SOLVED: To clean and rinse the substrate surface by an optimal supply system of cleaning solution or rinse water, without preparing a plurality of substrate cleaning devices of different supply system of cleaning solution or rinse water previously and using them properly.SOLUTION: The substrate cleaning device includes a plurality of cleaning solution supply nozzles 20a-20c, 22a-22c and a plurality of rinse water supply nozzles 24a-24c, 26a-26c for supplying the cleaning solution and rinse water, respectively, to a plurality of positions on both sides of a roll cleaning member 14 on the surface of a substrate W, flow control valves 36a-36c, 38a-38c and flow control valves 48a-48c, 50a-50c for regulating the flow rate, respectively, of cleaning solution supplied from each cleaning solution supply nozzle to the substrate surface and of rinse water supplied from each rinse water supply nozzle to the substrate surface, and a control unit 52 for controlling the flow control valves which regulate the flow rate of cleaning solution supplied from each cleaning solution supply nozzle and the flow rate of rinse water supplied from each rinse water supply nozzle, respectively.
摘要翻译：要解决的问题：通过清洁溶液或冲洗水的最佳供应系统清洁和冲洗基材表面，而不必先前准备好不同供应系统的清洗溶液或冲洗水的多个基板清洁装置，并正确使用它们。解决方案：基板清洗装置具有多个清洗液供给喷嘴20a-20c，22a-22c和多个用于将清洗液和冲洗水分别供给到多个位置的冲洗水供给喷嘴24a-24c，26a-26c 在基板W的表面上的辊清洁部件14的两侧，分别用于调节供给的清洗液的流量的流量控制阀36a-36c，38a-38c和流量控制阀48a-48c，50a-50c 从每个清洗溶液供给喷嘴到基板表面以及从每个冲洗水供给喷嘴供给到基板表面的冲洗水，以及控制单元52，用于控制流量控制va 调节从每个清洗溶液供应喷嘴供应的清洗溶液的流量和从每个冲洗水供应喷嘴供应的冲洗水的流量的流量。

3. 发明专利

JP2010074191A Substrate cleaning apparatus and method for determining timing of replacement of cleaning member 审中-公开
标题翻译：基板清洗装置及确定清洗构件更换时间的方法
公开(公告)号：JP2010074191A
公开(公告)日：2010-04-02
申请号：JP2009297161
申请日：2009-12-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMADA TOSHIMI
IPC分类号： H01L21/304
CPC分类号： H01L21/67046 , H01L21/02096 , H01L21/67057
摘要： PROBLEM TO BE SOLVED: To provide a method for determining timing of replacement of a cleaning member in a substrate cleaning apparatus and also to provide the substrate cleaning apparatus to continuously keep the cleaning member clean and not abraded, by determining the timing of replacement by monitoring abrasion or contamination condition of the cleaning member.
SOLUTION: When the substrate is scrubbed and cleaned by relative movement between the cleaning member and the substrate by contacting the cleaning member and the substrate while at least one of the cleaning member and the substrate is rotated, rotating condition of the cleaning member or rotating condition of the substrate is measured by a rotation measuring method, surface condition of the cleaning member is detected from change of the rotating condition, and timing of replacement of the cleaning member is determined from change of the surface condition detected.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于确定基材清洗装置中的清洁部件的更换定时的方法，并且还提供基板清洁装置，以通过确定清洁部件的时间来确保清洁部件的清洁和不磨损通过监测清洁部件的磨损或污染状况进行更换。解决方案：当清洁构件和基板之间的至少一个旋转时，通过使清洁构件和基板接触，通过清洁构件和基板之间的相对移动来清洗基板，并且清洁构件的旋转状态或通过旋转测量方法测量基板的旋转状态，则根据旋转状态的变化来检测清洁部件的表面状态，并且根据检测到的表面状态的变化来确定清洁部件的更换正时。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2007165366A Apparatus and method for processing substrate 审中-公开
标题翻译：装置和处理基板的方法
公开(公告)号：JP2007165366A
公开(公告)日：2007-06-28
申请号：JP2005355944
申请日：2005-12-09
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MAEDA KAZUAKI , KAMEZAWA KAORU , HAMADA TOSHIMI , MORISAWA SHINYA
IPC分类号： H01L21/306 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method by which a processing method suitable for a kind of film is quickly determined prior to etching, cleaning or the like, and to provide a substrate processing apparatus.
SOLUTION: The apparatus includes a registration section 11 wherein the kind of at least one film to be processed on the upper surface of a substrate can be registered, the kind of at least one film to be processed on the lower surface of the substrate can be also registered, and furthermore a contact angle of at least one film on the upper surface of the substrate to be processed with a processing liquid and that of at least one film on the lower surface of the substrate to be processed with the processing liquid can be registered; and a control unit 13 to control the operation of a processing liquid supply mechanism and a substrate rotation mechanism, on the basis of the registered information on the kind of film and the contact angle. Thus, the substrate processing apparatus controls processing operation on the basis of the registered contact angle to the processing liquid for the film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在蚀刻，清洗等之前迅速确定适合于一种膜的处理方法的基板处理方法，并提供一种基板处理装置。解决方案：该装置包括配准部分11，其中可以登记要在基板的上表面上处理的至少一种薄膜的种类，至少一种待处理的薄膜的种类在还可以登记基板，此外，在处理液体的待处理基板的上表面上的至少一个膜的接触角和待处理的基板的下表面上的至少一个膜的接触角与处理液体可以注册; 以及控制单元13，其基于关于胶片的种类和接触角的登记信息来控制处理液供给机构和基板旋转机构的操作。因此，基板处理装置基于与胶片的处理液的登记接触角来控制处理操作。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2004273961A Cleaning device of metal wiring forming substrate 审中-公开
公开(公告)号：JP2004273961A
公开(公告)日：2004-09-30
申请号：JP2003065845
申请日：2003-03-12
申请人： Ebara Corp , 株式会社荏原製作所
发明人： KODERA MASAKO , ITO KENYA , KAMEZAWA MASAYUKI , HAMADA TOSHIMI , KATAKABE ICHIRO
IPC分类号： H01L23/52 , B08B1/04 , B08B3/02 , B08B3/04 , B08B3/08 , B08B3/12 , C23G3/00 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/3205
CPC分类号： H01L21/67173 , B08B1/04 , B08B3/02 , B08B3/04 , B08B3/08 , B08B3/12 , C23G3/00 , H01L21/67046 , H01L21/67051 , H01L21/67057 , H01L21/67219
摘要： PROBLEM TO BE SOLVED: To provide a cleaning device to restrict a corrosion of a wiring formed of aluminium or its alloy on a substrate.
SOLUTION: The cleaning device of this metal wiring forming substrate has a grasping mechanism for holding the substrate, a cleaning mechanism for cleaning the substrate and a functional water supply mechanism. A surface of the substrate is cleaned with the functional water supplied from the functional water supply mechanism to the cleaning mechanism.
COPYRIGHT: (C)2004,JPO&NCIPI

6. 发明专利

JP2008010750A Substrate treatment unit, and substrate holding/rotating mechanism 审中-公开
标题翻译：基板处理单元和基板保持/旋转机构
公开(公告)号：JP2008010750A
公开(公告)日：2008-01-17
申请号：JP2006181840
申请日：2006-06-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： MAEDA KAZUAKI , ITO KENYA , HAMADA TOSHIMI , YAMADA KAORU
IPC分类号： H01L21/306 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate treatment unit which ensures uniform treatment to a bevel part on a processing substrate and rear surface cleaning irrespective of front or rear surface conditions of the processing substrate, and to provide a substrate holding/rotating mechanism required therefor.
SOLUTION: A substrate treatment unit comprises a substrate holding/rotating mechanism 10 and a processing mechanism for treating the surface of a processing substrate W to be held and rotated by means of the substrate holding/rotating mechanism 10. The substrate holding/rotating mechanism 10 comprises at least three rotating rollers 12 which retain the periphery of the treatment substrate W at the same rotating disc 11 and a rotation driving mechanism with a first gear 15 for rotating the rollers 12 in a predetermined direction, an intermediate gear 16 and a fixed second gear 20.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种基板处理单元，其能够对处理基板上的斜面部分进行均匀的处理，并且与处理基板的前表面或后表面条件无关地进行后表面清洁，并且提供基板保持/旋转所需的机制。解决方案：基板处理单元包括基板保持/旋转机构10和用于处理通过基板保持/旋转机构10保持和旋转的处理基板W的表面的处理机构。基板保持/ 旋转机构10包括至少三个旋转辊12，其将处理基板W的周边保持在相同的旋转盘11处;以及旋转驱动机构，其具有用于沿预定方向旋转辊12的第一齿轮15，中间齿轮16和固定的二档20.版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006004955A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2006004955A
公开(公告)日：2006-01-05
申请号：JP2004158716
申请日：2004-05-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMADA TOSHIMI , KONO MICHIHISA , KATAKABE ICHIRO , SHIMA SHOHEI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for rapidly and reliably drying a substrate by drying process that is performed after wet washing process, and to quickly remove an unneeded thin film formed at and adhered to the bevel and edge sections of the substrate while obtaining a steel slope edge profile even if the film is hard, and to restrain surface roughness at the bevel and edge sections after removing the unneeded thin film. SOLUTION: The substrate processing apparatus comprises a substrate holder 22 for retaining the substrate W; and dry gas supply sections 32, 36 for setting an atmosphere in which at least one portion of the surface of the substrate W retained by a substrate holder 22 is exposed to a dry gas atmosphere whose moisture is controlled. The substrate processing system comprises a polishing apparatus for polishing the thin film formed at and adhered to the bevel and edge sections of the substrate; and an etching device for removing the thin film remaining at the bevel and edge sections of the substrate after polishing by the polishing apparatus by etching. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种基板处理装置，用于通过在湿式洗涤处理之后进行的干燥工艺快速且可靠地干燥基板，并且快速地除去形成在并附着到斜边部分和边缘部分上的不需要的薄膜同时获得钢倾斜边缘轮廓，即使该膜是硬的，并且在去除不需要的薄膜之后抑制斜面和边缘部分处的表面粗糙度。解决方案：基板处理装置包括用于保持基板W的基板保持件22; 以及干燥气体供给部32,36，其设定由基板保持件22保持的基板W的表面的至少一部分暴露于控制了湿度的干燥气体环境的气氛。基板处理系统包括用于抛光在基板的斜边和边缘部分上形成并粘附到薄膜上的薄膜的抛光装置; 以及蚀刻装置，用于通过蚀刻在研磨装置进行研磨之后，去除残留在基板的斜面和边缘部分的薄膜。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005012238A Method and apparatus for cleaning substrate 审中-公开
标题翻译：清洗基板的方法和装置
公开(公告)号：JP2005012238A
公开(公告)日：2005-01-13
申请号：JP2004256223
申请日：2004-09-02
申请人： Ebara Corp , 株式会社荏原製作所
发明人： HAMADA TOSHIMI , SHIMIZU NOBU , MAEKAWA TOSHIRO
IPC分类号： B08B1/00 , B08B3/12 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for cleaning cleaning member which can obtain a high cleaning effect.
SOLUTION: The apparatus ultrasonically cleans the surfaces of a cleaning member 100 and a abutting member 20 by an ultrasonic cleaner 30, while driving the polluted cleaning member 100 after scrub cleaning against the abutting member 20 to rub each other in a cleaning liquid 17. It is preferable to provide two abutting members 20 so as to clean the cleaning member 100 alternately, namely, one abutting member 20 is cleaned ultrasonically, while the other abutting member 20 is being cleaned by the cleaning member 100.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以获得高清洁效果的清洁部件的清洁方法和装置。解决方案：该装置通过超声波清洗器30超声清洁清洁构件100和抵靠构件20的表面，同时在洗涤清洁之后驱动污染的清洁构件100抵靠构件20以在清洁液体中彼此摩擦优选地，设置两个邻接构件20，以便交替地清洁清洁构件100，即，一个邻接构件20被超声波清洁，而另一个邻接构件20被清洁构件100清洁。（C）2005，JPO＆NCIPI

9. 发明专利

JP2002045800A CLEANING APPARATUS AND METHOD 失效
公开(公告)号：JP2002045800A
公开(公告)日：2002-02-12
申请号：JP2000231673
申请日：2000-07-31
申请人： EBARA CORP , TOSHIBA CORP
发明人： SHIRAKASHI MICHIHIKO , TSUJIMURA MANABU , HAMADA TOSHIMI , MIYASHITA NAOTO , KODERA MASAKO , NADAHARA SOICHI , TOMITA HIROSHI
IPC分类号： B08B3/02 , B08B3/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To prevent the erosion or corrosion of the tip part of a cleaning nozzle from being promoted and to effectively clean the cleaning surface of a substrate while sufficiently reflecting the effect of a chemical liquid, functional water or gas dissolved water. SOLUTION: A substrate holding part 10 for holding the substrate and the cleaning nozzle 16 for ejecting two or more kinds of liquids toward the cleaning surface of the substrate W at the same time from two or more kinds of nozzle parts 28 and 30 arranged in a concentric state are provided and, as at least one of two or more kinds of liquids, the chemical liquid, functional water or gas dissolved water is used.

10. 发明专利

JPH1092781A METHOD AND EQUIPMENT FOR CARRYING SUBSTRATE 失效
公开(公告)号：JPH1092781A
公开(公告)日：1998-04-10
申请号：JP16059597
申请日：1997-06-03
申请人： EBARA CORP , TOSHIBA CORP
发明人： MAEKAWA TOSHIRO , HAMADA TOSHIMI , AOKI RIICHIRO , KODAMA SHOICHI , YAJIMA HIROMI
IPC分类号： B08B3/04 , H01L21/304 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent treatment fluid of a substrate from dripping, while preventing the substrate from drying by adjusting the quantity of treatment fluid held on the substrate to be a specific target value, before the semiconductor substrate is carried between treatment processes. SOLUTION: Before carrying equipements 5A, 5B take out a semiconductor substrate 1 from a spin chuck and carry the substrate, the following is performed; a process wherein cleaning fluid on the semiconductor substrate 1 is eliminated by a physical method, and the quantity of the cleaning fluid held on the substrate is adjusted to be a specific target value. That is, after the supply of the cleaning fluid is stopped and rinsing is halted, the semiconductor substrate 1 is rotated at a number of revolutions lower than that of a cleaning process. Thereby the wet state of the semiconductor substrate 1 can be maintained during the waiting period, until the next cleaning treatment or during carriage, and the quantity of the treatment fluid of the semiconductor substrate 1 can be maintained in a state in which the fluid scarcely drips.

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