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1. 发明授权

US08529996B2 High-temperature attachment of organic molecules to substrates 失效
标题翻译：将有机分子高温附着于底物
公开(公告)号：US08529996B2
公开(公告)日：2013-09-10
申请号：US11688194
申请日：2007-03-19
申请人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
发明人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
IPC分类号： C23C16/00
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

2. 发明授权

US07223628B2 High temperature attachment of organic molecules to substrates 失效
标题翻译：将有机分子高温附着于底物
公开(公告)号：US07223628B2
公开(公告)日：2007-05-29
申请号：US10742596
申请日：2003-12-19
申请人： David F. Bocian , Jonathan Lindsey , Zhiming Liu , Amir A. Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
发明人： David F. Bocian , Jonathan Lindsey , Zhiming Liu , Amir A. Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

3. 发明申请

US20070212897A1 HIGH-TEMPERATURE ATTACHMENT OF ORGANIC MOLECULES TO SUBSTRATES 失效
标题翻译：有机分子与基底的高温连接
公开(公告)号：US20070212897A1
公开(公告)日：2007-09-13
申请号：US11688194
申请日：2007-03-19
申请人： David Bocian , Jonathan Lindsey , Zhiming Liu , Amir Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert Loewe
发明人： David Bocian , Jonathan Lindsey , Zhiming Liu , Amir Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert Loewe
IPC分类号： H01L21/469
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

4. 发明申请

US20050048691A1 High temperature attachment of organic molecules to substrates 失效
标题翻译：将有机分子高温附着于底物
公开(公告)号：US20050048691A1
公开(公告)日：2005-03-03
申请号：US10742596
申请日：2003-12-19
申请人： David Bocian , Jonathan Lindsey , Zhiming Liu , Amir Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert Loewe
发明人： David Bocian , Jonathan Lindsey , Zhiming Liu , Amir Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert Loewe
IPC分类号： G11C13/02 , H01L21/477 , H01L51/00 , H01L51/30 , H01L51/40 , H01M4/60 , H01M14/00 , H01L21/26
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

5. 发明授权

US07989800B2 Nanowire field effect junction diode 有权
标题翻译：纳米线场效应结二极管
公开(公告)号：US07989800B2
公开(公告)日：2011-08-02
申请号：US12578676
申请日：2009-10-14
申请人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
发明人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
IPC分类号： H01L31/09
CPC分类号： H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/113 , H01L31/119 , H03K17/74 , Y02E10/50 , Y10S977/762 , Y10S977/938
摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
摘要翻译：构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。纳米线设置在绝缘透明基板上。阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。氧化物层覆盖纳米线。第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

6. 发明申请

US20100090198A1 Nanowire Field Effect Junction Diode 有权
标题翻译：纳米线场效应结二极管
公开(公告)号：US20100090198A1
公开(公告)日：2010-04-15
申请号：US12578676
申请日：2009-10-14
申请人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
发明人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
IPC分类号： H01L31/09
CPC分类号： H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/113 , H01L31/119 , H03K17/74 , Y02E10/50 , Y10S977/762 , Y10S977/938
摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
摘要翻译：构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。纳米线设置在绝缘透明基板上。阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。氧化层覆盖纳米线。第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

7. 发明授权

US11977358B2 Systems and methods for dynamic biometric control of IoT devices 有权
公开(公告)号：US11977358B2
公开(公告)日：2024-05-07
申请号：US17404617
申请日：2021-08-17
申请人： Robin H. Stewart , Qiliang Li
发明人： Robin H. Stewart , Qiliang Li
IPC分类号： G05B13/02 , A61B5/00 , A61B5/0205 , A61B5/024 , G06N20/00 , G16Y30/00 , A61B5/021 , A61B5/145 , A61B5/1455
CPC分类号： G05B13/0265 , A61B5/0022 , G06N20/00 , G16Y30/00 , A61B5/02055 , A61B5/021 , A61B5/02416 , A61B5/14532 , A61B5/14551 , A61B2503/12
摘要： Systems and methods of dynamic IoT device regulation and control can aid in shifting a user's emotional state from a first state of mind to a preferred second state of mind, using the user's biomarker response to device settings. Particularly, an IoT device controller may be embedded within a wearable device that is wirelessly connected to a computing device and one or more IoT devices. Initially, each wearable device can be calibrated, wherein a matrix of sensed user biomarker responses can be generated. In some embodiments, the system continuously monitors user biomarkers to detect which physiological state exists. When the user enters into the first physiological/psychological state, the system can adjust each IoT device to align with the second state. When the system detects that the user biomarker response has not shifted, the system can continuously adjust IoT settings based upon a learning algorithm having monitored user biomarkers as input.

8. 发明授权

US11749405B2 Systems and methods for dynamic biometric detection and response 有权
公开(公告)号：US11749405B2
公开(公告)日：2023-09-05
申请号：US16928464
申请日：2020-07-14
申请人： Robin H. Stewart , Qiliang Li
发明人： Robin H. Stewart , Qiliang Li
IPC分类号： G16H50/20 , A61B5/0205 , A61B5/00 , A61B5/11 , A61B5/145 , A61B5/1455 , A61J7/04 , G16H10/60 , G16H50/30 , G06F18/2132 , G06F18/2135
CPC分类号： G16H50/20 , A61B5/0022 , A61B5/02055 , A61B5/1112 , A61B5/1117 , A61B5/14532 , A61B5/14551 , A61B5/681 , A61B5/7264 , A61B5/746 , A61J7/0427 , G06F18/2132 , G06F18/2135 , G16H10/60 , G16H50/30 , A61B2562/0219 , A61J2205/60
摘要： Systems and methods of dynamic biometric detection and response are provided for the purpose of establishing baseline health status while conveying real-time drug prescription usages and reactions from baseline data. The dynamic monitoring system may be embedded within a wristband, ring, vest, and/or waistband in wireless communication with a computing device or server. Each wearable device may employ interchangeable and embedded sensors to detect inertia movements; 360-imaging fall detections; and a variety of body-emitting vital signs. The system may include a processor operable to sense user location, motion, activity, and biomarkers for the purpose of detecting the user's behavior pattern, wherein an enhanced machine-learning algorithm is used to identify repetitive actions within the user's behavior pattern; and, based upon this pattern, the system is able to detect one or more anomalies for the purpose of generating an anomaly alert for third party notification and quantitative analysis at a server.

9. 发明申请

US20230056100A1 SYSTEMS AND METHODS FOR DYNAMIC BIOMETRIC CONTROL OF IOT DEVICES 有权
公开(公告)号：US20230056100A1
公开(公告)日：2023-02-23
申请号：US17404617
申请日：2021-08-17
申请人： Robin H. Stewart , Qiliang Li
发明人： Robin H. Stewart , Qiliang Li
IPC分类号： G05B13/02 , A61B5/00 , G16Y30/00 , G06N20/00
摘要： Systems and methods of dynamic IoT device regulation and control can aid in shifting a user's emotional state from a first state of mind to a preferred second state of mind, using the user's biomarker response to device settings. Particularly, an IoT device controller may be embedded within a wearable device that is wirelessly connected to a computing device and one or more IoT devices. Initially, each wearable device can be calibrated, wherein a matrix of sensed user biomarker responses can be generated. In some embodiments, the system continuously monitors user biomarkers to detect which physiological state exists. When the user enters into the first physiological/psychological state, the system can adjust each IoT device to align with the second state. When the system detects that the user biomarker response has not shifted, the system can continuously adjust IoT settings based upon a learning algorithm having monitored user biomarkers as input.

10. 发明授权

US11001497B2 High performance topological insulator transistors 有权
公开(公告)号：US11001497B2
公开(公告)日：2021-05-11
申请号：US14652017
申请日：2013-12-12
申请人： Qiliang Li , Curt A Richter , Hao Zhu
发明人： Qiliang Li , Curt A Richter , Hao Zhu
IPC分类号： B82Y10/00 , H01L29/775 , H01L29/06 , H01L29/82 , H01L29/66 , H01L49/00 , H01L29/786
摘要： Topological insulators, such as single-crystal Bi2Se3 nanowires, can be used as the conduction channel in high-performance transistors, a basic circuit building block. Such transistors exhibit current-voltage characteristics superior to semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. The metallic electron transport at the surface with good effective mobility can be effectively separated from the conduction of the bulk topological insulator and adjusted by field effect at a small gate voltage. Topological insulators, such as Bi2Se3, also have a magneto-electric effect that causes transistor threshold voltage shifts with external magnetic field. These properties are desirable for numerous microelectronic and nanoelectronic circuitry applications, among other applications.

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