会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Nanowire field effect junction diode
    • 纳米线场效应结二极管
    • US07989800B2
    • 2011-08-02
    • US12578676
    • 2009-10-14
    • Qiliang LiDimitris E. IoannouYang YangXiaoxiao Zhu
    • Qiliang LiDimitris E. IoannouYang YangXiaoxiao Zhu
    • H01L31/09
    • H01L31/0352H01L31/06H01L31/062H01L31/113H01L31/119H03K17/74Y02E10/50Y10S977/762Y10S977/938
    • A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
    • 构造在绝缘透明基板上的纳米线场效应结二极管,其允许形成诸如视觉光,紫外线辐射的辐射; 或红外辐射通过。 纳米线设置在绝缘透明基板上。 阳极连接到纳米线的第一端,并且阴极连接到纳米线的第二端。 氧化物层覆盖纳米线。 第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。 第二导电栅极设置在氧化物层的顶部上,与非零分离相邻,并与第一导电栅极非零分离相邻。 通过施加相反的栅极电压,可以沿着纳米线通道动态地形成可控的PN结。 通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。
    • 6. 发明申请
    • Nanowire Field Effect Junction Diode
    • 纳米线场效应结二极管
    • US20100090198A1
    • 2010-04-15
    • US12578676
    • 2009-10-14
    • Qiliang LiDimitris E. IoannouYang YangXiaoxiao Zhu
    • Qiliang LiDimitris E. IoannouYang YangXiaoxiao Zhu
    • H01L31/09
    • H01L31/0352H01L31/06H01L31/062H01L31/113H01L31/119H03K17/74Y02E10/50Y10S977/762Y10S977/938
    • A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
    • 构造在绝缘透明基板上的纳米线场效应结二极管,其允许形成诸如视觉光,紫外线辐射的辐射; 或红外辐射通过。 纳米线设置在绝缘透明基板上。 阳极连接到纳米线的第一端,并且阴极连接到纳米线的第二端。 氧化层覆盖纳米线。 第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。 第二导电栅极设置在氧化物层的顶部上,与非零分离相邻,并与第一导电栅极非零分离相邻。 通过施加相反的栅极电压,可以沿着纳米线通道动态地形成可控的PN结。 通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。