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1. 发明授权

US07223628B2 High temperature attachment of organic molecules to substrates 失效
标题翻译：将有机分子高温附着于底物
公开(公告)号：US07223628B2
公开(公告)日：2007-05-29
申请号：US10742596
申请日：2003-12-19
申请人： David F. Bocian , Jonathan Lindsey , Zhiming Liu , Amir A. Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
发明人： David F. Bocian , Jonathan Lindsey , Zhiming Liu , Amir A. Yasseri , Veen Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
IPC分类号： H01L51/40
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

2. 发明授权

US08529996B2 High-temperature attachment of organic molecules to substrates 失效
标题翻译：将有机分子高温附着于底物
公开(公告)号：US08529996B2
公开(公告)日：2013-09-10
申请号：US11688194
申请日：2007-03-19
申请人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
发明人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
IPC分类号： C23C16/00
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译：本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。

3. 发明授权

US06943054B2 Attachment of organic molecules to group III, IV or V substrates 失效
公开(公告)号：US06943054B2
公开(公告)日：2005-09-13
申请号：US10628868
申请日：2003-07-28
申请人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Robert S. Loewe
发明人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Robert S. Loewe
IPC分类号： G11C13/02 , H01L21/477 , H01L51/00 , H01L51/30 , H01L51/40 , H01M4/60 , H01M14/00
CPC分类号： H01M4/60 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0002 , H01L51/0003 , H01L51/0008 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.

4. 发明申请

US20080090401A1 Independently addressable interdigitated nanowires 有权
标题翻译：独立的可寻址交叉纳米线
公开(公告)号：US20080090401A1
公开(公告)日：2008-04-17
申请号：US11581969
申请日：2006-10-17
申请人： Alexandre Bratkovski , Amir A. Yasseri , R. Stanley Williams
发明人： Alexandre Bratkovski , Amir A. Yasseri , R. Stanley Williams
IPC分类号： H01L21/44
CPC分类号： H01Q15/0006 , H01Q15/0013 , Y10S977/742 , Y10S977/936 , Y10S977/948
摘要： An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically isolated from nanowires of other sets.
摘要翻译：一种装置具有多组独立可寻址的交叉指示的纳米线。一组的纳米线与相同组的其它纳米线电连通，并与其他组的纳米线电隔离。

5. 发明申请

US20080081388A1 COMPOSITE NANOSTRUCTURE APPARATUS AND METHOD 有权
标题翻译：复合纳米结构装置及方法
公开(公告)号：US20080081388A1
公开(公告)日：2008-04-03
申请号：US11537589
申请日：2006-09-29
申请人： Amir A. Yasseri , Theodore I. Kamins , Shashank Sharma
发明人： Amir A. Yasseri , Theodore I. Kamins , Shashank Sharma
IPC分类号： H01L21/00
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y20/00 , G01N21/658 , H01L29/0676 , Y10S977/857
摘要： A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a method of forming catalyzing nanoparticles, the metal preferentially deposits on a selected location of a surface that is exposed through a mask layer instead of on unexposed surfaces. A composite nanostructure apparatus includes an array of nanowires and the metal deposited on at least some nanowire surfaces. Some of the nanowires are heterogeneous, branched and include different adjacent axial segments with controlled axial lengths. In some deposition solutions, the enhancer one or both of controls oxide formation on the surface and causes metal nanocrystal formation. The deposition solution further includes a solvent that carries the metal salt and the enhancer.
摘要翻译：使用包含金属盐的沉积溶液电化学地将金属沉积在表面上。在制备复合纳米结构时，溶液还包括促进金属在纳米结构上的电化学沉积的增强剂。在形成催化纳米颗粒的方法中，金属优先沉积在通过掩模层而不是未暴露的表面暴露的表面的选定位置。复合纳米结构设备包括纳米线阵列和沉积在至少一些纳米线表面上的金属。一些纳米线是异质的，分支的并且包括具有受控轴向长度的不同的相邻轴向段。在一些沉积溶液中，增强剂中的一个或两个控制表面上的氧化物形成并引起金属纳米晶体的形成。沉积溶液还包括携带金属盐和增强剂的溶剂。

6. 发明申请

US20110189858A1 METHOD FOR REDUCING PATTERN COLLAPSE IN HIGH ASPECT RATIO NANOSTRUCTURES 有权
标题翻译：在高比例纳米结构中减少图案褶皱的方法
公开(公告)号：US20110189858A1
公开(公告)日：2011-08-04
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S.L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S.L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/30
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

7. 发明授权

US07638431B2 Composite nanostructure apparatus and method 有权
标题翻译：复合纳米结构设备及方法
公开(公告)号：US07638431B2
公开(公告)日：2009-12-29
申请号：US11537589
申请日：2006-09-29
申请人： Amir A. Yasseri , Theodore I. Kamins , Shashank Sharma
发明人： Amir A. Yasseri , Theodore I. Kamins , Shashank Sharma
IPC分类号： H01L21/44
CPC分类号： B82Y40/00 , B82Y10/00 , B82Y20/00 , G01N21/658 , H01L29/0676 , Y10S977/857
摘要： A metal is deposited onto a surface electrochemically using a deposition solution including a metal salt. In making a composite nanostructure, the solution further includes an enhancer that promotes electrochemical deposition of the metal on the nanostructure. In a method of forming catalyzing nanoparticles, the metal preferentially deposits on a selected location of a surface that is exposed through a mask layer instead of on unexposed surfaces. A composite nanostructure apparatus includes an array of nanowires and the metal deposited on at least some nanowire surfaces. Some of the nanowires are heterogeneous, branched and include different adjacent axial segments with controlled axial lengths. In some deposition solutions, the enhancer one or both of controls oxide formation on the surface and causes metal nanocrystal formation. The deposition solution further includes a solvent that carries the metal salt and the enhancer.
摘要翻译：使用包含金属盐的沉积溶液电化学地将金属沉积在表面上。在制备复合纳米结构时，溶液还包括促进金属在纳米结构上的电化学沉积的增强剂。在形成催化纳米颗粒的方法中，金属优先沉积在通过掩模层而不是未暴露的表面暴露的表面的选定位置。复合纳米结构设备包括纳米线阵列和沉积在至少一些纳米线表面上的金属。一些纳米线是异质的，分支的并且包括具有受控轴向长度的不同的相邻轴向段。在一些沉积溶液中，增强剂中的一个或两个控制表面上的氧化物形成并引起金属纳米晶体的形成。沉积溶液还包括携带金属盐和增强剂的溶剂。

8. 发明授权

US07608905B2 Independently addressable interdigitated nanowires 有权
标题翻译：独立的可寻址交叉纳米线
公开(公告)号：US07608905B2
公开(公告)日：2009-10-27
申请号：US11581969
申请日：2006-10-17
申请人： Alexandre Bratkovski , Amir A. Yasseri , R. Stanley Williams
发明人： Alexandre Bratkovski , Amir A. Yasseri , R. Stanley Williams
IPC分类号： H01L21/4763
CPC分类号： H01Q15/0006 , H01Q15/0013 , Y10S977/742 , Y10S977/936 , Y10S977/948
摘要： An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically isolated from nanowires of other sets.
摘要翻译：一种装置具有多组独立可寻址的交叉指示的纳米线。一组的纳米线与相同组的其它纳米线电连通，并与其他组的纳米线电隔离。

9. 发明申请

US20080079104A1 Sensing devices and methods for forming the same 失效
标题翻译：传感装置及其形成方法
公开(公告)号：US20080079104A1
公开(公告)日：2008-04-03
申请号：US11584103
申请日：2006-10-20
申请人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
发明人： Duncan R. Stewart , Amir A. Yasseri , R. Stanley Williams , Theodore I. Kamins
IPC分类号： H01L31/0203 , H01L21/00
CPC分类号： B82Y20/00 , G01N21/658 , H01L31/035227
摘要： A sensing device includes an optical cavity having two substantially opposed reflective surfaces. At least one nanowire is operatively disposed in the optical cavity. A plurality of metal nanoparticles is established on the at least one nanowire.
摘要翻译：感测装置包括具有两个基本上相对的反射表面的光学腔。至少一个纳米线可操作地设置在光腔中。在至少一个纳米线上建立多个金属纳米颗粒。

10. 发明授权

US08617993B2 Method of reducing pattern collapse in high aspect ratio nanostructures 有权
标题翻译：降低高纵横比纳米结构中图案塌陷的方法
公开(公告)号：US08617993B2
公开(公告)日：2013-12-31
申请号：US12697862
申请日：2010-02-01
申请人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
发明人： Amir A. Yasseri , Ji Zhu , Seokmin Yun , David S. L. Mui , Katrina Mikhaylichenko
IPC分类号： H01L21/302 , H01L21/461 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02057
摘要： A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
摘要翻译：提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在涉及半导体器件制造的一些严格处理过程中保护精细的纳米结构。处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。处理可以包括施加化学改变纳米结构表面的底漆，防止在随后的湿清洁过程中它们被损坏。然后可以进一步处理晶片，例如湿式清洁工艺，随后进行干燥处理。纳米结构的增加的疏水性有助于减少或防止纳米结构的崩溃。

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