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1. 发明授权

US07989800B2 Nanowire field effect junction diode 有权
标题翻译：纳米线场效应结二极管
公开(公告)号：US07989800B2
公开(公告)日：2011-08-02
申请号：US12578676
申请日：2009-10-14
申请人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
发明人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
IPC分类号： H01L31/09
CPC分类号： H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/113 , H01L31/119 , H03K17/74 , Y02E10/50 , Y10S977/762 , Y10S977/938
摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
摘要翻译：构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。纳米线设置在绝缘透明基板上。阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。氧化物层覆盖纳米线。第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

2. 发明授权

US07180135B1 Double gate (DG) SOI ratioed logic with intrinsically on symmetric DG-MOSFET load 失效
标题翻译：双栅（DG）SOI比率逻辑本质上对称DG-MOSFET负载
公开(公告)号：US07180135B1
公开(公告)日：2007-02-20
申请号：US10951695
申请日：2004-09-29
申请人： Dimitris E. Ioannou , Souvick Mitra , Akram Salman
发明人： Dimitris E. Ioannou , Souvick Mitra , Akram Salman
IPC分类号： H01L27/01
CPC分类号： H01L29/78648 , H01L27/1203
摘要： Disclosed is a Silicon-On-Insulator (SOI) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) logic family composed of ratioed logic with intrinsically “on” symmetric fully depleted double-gate (DG) SOI MOSFET load(s) and asymmetric fully depleted double gate MOSFET driver(s).
摘要翻译：公开了一种由本质上“对称”全耗尽双栅极（DG）SOI MOSFET负载和不对称的比例逻辑组成的绝缘体上硅绝缘体（SOI）金属氧化物半导体场效应晶体管（MOSFET）逻辑系列完全耗尽的双栅极MOSFET驱动器。

3. 发明授权

US5455791A Method for erasing data in EEPROM devices on SOI substrates and device therefor 失效
标题翻译：擦除SOI衬底上的EEPROM器件中的数据的方法及其装置
公开(公告)号：US5455791A
公开(公告)日：1995-10-03
申请号：US252207
申请日：1994-06-01
申请人： Andrzei Zaleski , Dimitris E. Ioannou
发明人： Andrzei Zaleski , Dimitris E. Ioannou
IPC分类号： G11C16/14 , H01L29/423 , H01L29/788 , G11C17/00
CPC分类号： H01L29/7881 , G11C16/14 , H01L29/42324
摘要： A simple stacked gate Electrically Erasable Programmable Read Only Memory (EEPROM) device fabricated on Silicon-on-Insulator (SOI) substrates(films) and a method to erase data in such device as well as in any other EEPROM devices fabricated on SOI substrates(films) is described. The new EEPROM device incorporates two separate control gates, a front control gate and a back control gate. In the new erasing method the back control gate is used to operate back channel of the EEPROM device in the avalanche region and generate hot carriers subsequently injected into the floating gate. The new erasing method is applicable to either n-channel or p-channel, inversion, accumulation or depletion mode devices.
摘要翻译：在绝缘体上硅（SOI）衬底（薄膜）上制造的简单堆叠栅极电可擦除可编程只读存储器（EEPROM）器件，以及擦除此类器件以及在SOI衬底上制造的任何其他EEPROM器件中的数据的方法（薄膜）。新的EEPROM器件包含两个独立的控制门，前控制门和后控制门。在新的擦除方法中，背控制栅极用于在雪崩区域中操作EEPROM器件的反向通道，并产生随后注入到浮动栅极中的热载流子。新的擦除方法适用于n沟道或p沟道，反相，累积或耗尽型器件。

4. 发明申请

US20100090198A1 Nanowire Field Effect Junction Diode 有权
标题翻译：纳米线场效应结二极管
公开(公告)号：US20100090198A1
公开(公告)日：2010-04-15
申请号：US12578676
申请日：2009-10-14
申请人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
发明人： Qiliang Li , Dimitris E. Ioannou , Yang Yang , Xiaoxiao Zhu
IPC分类号： H01L31/09
CPC分类号： H01L31/0352 , H01L31/06 , H01L31/062 , H01L31/113 , H01L31/119 , H03K17/74 , Y02E10/50 , Y10S977/762 , Y10S977/938
摘要： A nanowire field effect junction diode constructed on an insulating transparent substrate that allows form(s) of radiation such as visual light, ultraviolet radiation; or infrared radiation to pass. A nanowire is disposed on the insulating transparent substrate. An anode is connected to a first end of the nanowire and a cathode is connected to the second end of the nanowire. An oxide layer covers the nanowire. A first conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the anode. A second conducting gate is disposed on top of the oxide layer adjacent with a non-zero separation to the cathode and adjacent with a non-zero separation the first conducting gate. A controllable PN junction may be dynamically formed along the nanowire channel by applying opposite gate voltages. Radiation striking the nanowire through the substrate creates a current the anode and cathode.
摘要翻译：构造在绝缘透明基板上的纳米线场效应结二极管，其允许形成诸如视觉光，紫外线辐射的辐射; 或红外辐射通过。纳米线设置在绝缘透明基板上。阳极连接到纳米线的第一端，并且阴极连接到纳米线的第二端。氧化层覆盖纳米线。第一导电栅极设置在邻近非零分离到阳极的氧化物层的顶部上。第二导电栅极设置在氧化物层的顶部上，与非零分离相邻，并与第一导电栅极非零分离相邻。通过施加相反的栅极电压，可以沿着纳米线通道动态地形成可控的PN结。通过衬底撞击纳米线的辐射产生了阳极和阴极的电流。

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