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    • 1. 发明授权
    • Method for making magnetic write head
    • 磁头写入方法
    • US07380330B2
    • 2008-06-03
    • US11186174
    • 2005-07-21
    • Daniel Wayne BedellAron PentekKatalin PentekYi Zheng
    • Daniel Wayne BedellAron PentekKatalin PentekYi Zheng
    • G11B5/127
    • G11B5/3163Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49046Y10T29/49052
    • After defining the P2 pole of a magnetic read head, alumina is deposited over it and planarized by CMP, with the portion of the alumina overlaying the ABS region of the P2 pole subsequently being masked by a photoresist layer and with the portions of the alumina overlaying the flare area, back gap region, and center tap regions of the P2 pole not being masked. A reactive ion mill is performed to expose the flare area, back gap region, and center tap regions of the P2 pole by removing the alumina over these portions, so that subsequent steps such as forming a layer of coiled conductors, forming a return pole, and forming stud connections along with removing the respective seed layers can be executed with the ABS region protected by the alumina and with the flare area, back gap region, and center tap region exposed.
    • 在定义磁读头的P2极之后,将氧化铝沉积在其上并通过CMP平坦化,其中覆盖P2极的ABS区域的氧化铝的部分随后被光致抗蚀剂层掩蔽,并且氧化铝的部分覆盖 P2极的光斑区域,背隙区域和中心抽头区域不被掩蔽。 通过在这些部分上除去氧化铝,进行反应离子磨,以暴露P2极的火炬区域,后隙区域和中心抽头区域,从而形成后续步骤,例如形成线圈导体层,形成返回极, 并且可以利用由氧化铝保护的ABS区域和暴露的火炬区域,后隙区域和中心抽头区域来执行形成螺柱连接以及移除相应的种子层。
    • 3. 发明申请
    • Method for making magnetic write head
    • 磁头写入方法
    • US20070017087A1
    • 2007-01-25
    • US11186174
    • 2005-07-21
    • Daniel BedellAron PentekKatalin PentekYi Zheng
    • Daniel BedellAron PentekKatalin PentekYi Zheng
    • G11B5/127
    • G11B5/3163Y10T29/49032Y10T29/49041Y10T29/49043Y10T29/49046Y10T29/49052
    • After defining the P2 pole of a magnetic read head, alumina is deposited over it and planarized by CMP, with the portion of the alumina overlaying the ABS region of the P2 pole subsequently being masked by a photoresist layer and with the portions of the alumina overlaying the flare area, back gap region, and center tap regions of the P2 pole not being masked. A reactive ion mill is performed to expose the flare area, back gap region, and center tap regions of the P2 pole by removing the alumina over these portions, so that subsequent steps such as forming a layer of coiled conductors, forming a return pole, and forming stud connections along with removing the respective seed layers can be executed with the ABS region protected by the alumina and with the flare area, back gap region, and center tap region exposed.
    • 在定义磁读头的P2极之后,将氧化铝沉积在其上并通过CMP平坦化,其中覆盖P2极的ABS区域的氧化铝的部分随后被光致抗蚀剂层掩蔽,并且氧化铝的部分覆盖 P2极的光斑区域,背隙区域和中心抽头区域不被掩蔽。 通过在这些部分上除去氧化铝,进行反应离子磨,以暴露P2极的火炬区域,后隙区域和中心抽头区域,从而形成后续步骤,例如形成线圈导体层,形成返回极, 并且可以利用由氧化铝保护的ABS区域和暴露的火炬区域,后隙区域和中心抽头区域来执行形成螺柱连接以及移除相应的种子层。