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    • 1. 发明授权
    • Diamond pn junction diode and method for the fabrication thereof
    • 金刚石pn结二极管及其制造方法
    • US06727171B2
    • 2004-04-27
    • US10368482
    • 2003-02-20
    • Daisuke TakeuchiHideyuki WatanabeHideyo OkushiMasataka HasegawaMasahiko OguraNaoto KobayashiKoji KajimuraSadanori Yamanaka
    • Daisuke TakeuchiHideyuki WatanabeHideyo OkushiMasataka HasegawaMasahiko OguraNaoto KobayashiKoji KajimuraSadanori Yamanaka
    • H01L214763
    • H01L33/34H01L29/1602H01L29/6603H01L29/66136H01L29/861H01S5/3045H01S5/305
    • A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode includes the steps of forming a p-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer by ion implantation of an impurity.
    • 金刚石pn结二极管包括形成在基板上的p型金刚石薄膜层和通过在p型金刚石薄膜层上形成高品质未掺杂的金刚石薄膜层形成的n型金刚石薄膜层, 膜层,并将杂质离子注入到高质量未掺杂的金刚石薄膜层中,或者还可以包括形成在基板上的n型金刚石薄膜层和形成p型金刚石薄膜层的p型金刚石薄膜层, 在n型金刚石薄膜层上的高品质未掺杂金刚石薄膜层,并将杂质离子注入到高品质未掺杂的金刚石薄膜层中。 制造金刚石pn结二极管的方法包括以下步骤:在衬底上形成p型金刚石薄膜层,在p型金刚石薄膜层上形成高质量未掺杂的金刚石薄膜层;以及 通过离子注入杂质使高品质未掺杂的金刚石薄膜层成为n型金刚石薄膜层,或者也可以包括在基板上形成n型金刚石薄膜层的步骤,形成高 在n型金刚石薄膜层上的质量未掺杂的金刚石薄膜层,并且通过离子注入杂质使高品质未掺杂的金刚石薄膜层成为p型金刚石薄膜层。
    • 7. 发明申请
    • INFORMATION PROCESSING APPARATUS, METHOD, AND PROGRAM
    • 信息处理设备,方法和程序
    • US20100007914A1
    • 2010-01-14
    • US12428192
    • 2009-04-22
    • Hideyuki Watanabe
    • Hideyuki Watanabe
    • G06F3/12
    • H04N1/001H04L61/103H04L61/2015H04N1/00896H04N2201/0039H04N2201/0081H04N2201/0082H04N2201/0094
    • An information processing apparatus linked to a network includes a central processing unit CPU, a power management unit, a physical layer, a packet engine unit, a packet filter, and a transmission control unit. The packet engine unit transmits a packet to the network. The packet filter receives a packet from the network. The transmission control unit controls packet transmission. The power management unit supplies power to the physical layer, packet filter, and packet engine unit but not the CPU during a low-power mode. The packet engine unit includes an identification data generator, a message data generator, and a packet frame generator. The identification data generator generates identification data. The message data generator generates message data. The packet frame generator generates a packet by combining the identification data and message data. The transmission control unit transmits the packet periodically during the low-power mode.
    • 链接到网络的信息处理装置包括中央处理单元CPU,功率管理单元,物理层,分组引擎单元,分组过滤器和传输控制单元。 分组引擎单元向网络发送分组。 分组过滤器从网络接收分组。 传输控制单元控制分组传输。 电源管理单元在低功耗模式下为物理层,数据包过滤器和数据包引擎单元供电,但不为CPU供电。 分组引擎单元包括识别数据生成器,消息数据生成器和分组帧生成器。 识别数据生成器生成识别数据。 消息数据生成器生成消息数据。 分组帧生成器通过组合识别数据和消息数据来生成分组。 传输控制单元在低功率模式期间周期性地发送分组。