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1. 发明授权

US06727171B2 Diamond pn junction diode and method for the fabrication thereof 失效
标题翻译：金刚石pn结二极管及其制造方法
公开(公告)号：US06727171B2
公开(公告)日：2004-04-27
申请号：US10368482
申请日：2003-02-20
申请人： Daisuke Takeuchi , Hideyuki Watanabe , Hideyo Okushi , Masataka Hasegawa , Masahiko Ogura , Naoto Kobayashi , Koji Kajimura , Sadanori Yamanaka
发明人： Daisuke Takeuchi , Hideyuki Watanabe , Hideyo Okushi , Masataka Hasegawa , Masahiko Ogura , Naoto Kobayashi , Koji Kajimura , Sadanori Yamanaka
IPC分类号： H01L214763
CPC分类号： H01L33/34 , H01L29/1602 , H01L29/6603 , H01L29/66136 , H01L29/861 , H01S5/3045 , H01S5/305
摘要： A diamond pn junction diode includes a p-type diamond thin-film layer formed on a substrate and an n-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer, or alternatively includes an n-type diamond thin-film layer formed on a substrate and a p-type diamond thin-film layer formed by forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer and ion-implanting an impurity into the high-quality undoped diamond thin-film layer. A method of fabricating a diamond pn junction diode includes the steps of forming a p-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the p-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer an n-type diamond thin-film layer by ion implantation of an impurity, or alternatively includes the steps of forming an n-type diamond thin-film layer on a substrate, forming a high-quality undoped diamond thin-film layer on the n-type diamond thin-film layer, and making the high-quality undoped diamond thin-film layer a p-type diamond thin-film layer by ion implantation of an impurity.
摘要翻译：金刚石pn结二极管包括形成在基板上的p型金刚石薄膜层和通过在p型金刚石薄膜层上形成高品质未掺杂的金刚石薄膜层形成的n型金刚石薄膜层，膜层，并将杂质离子注入到高质量未掺杂的金刚石薄膜层中，或者还可以包括形成在基板上的n型金刚石薄膜层和形成p型金刚石薄膜层的p型金刚石薄膜层，在n型金刚石薄膜层上的高品质未掺杂金刚石薄膜层，并将杂质离子注入到高品质未掺杂的金刚石薄膜层中。制造金刚石pn结二极管的方法包括以下步骤：在衬底上形成p型金刚石薄膜层，在p型金刚石薄膜层上形成高质量未掺杂的金刚石薄膜层;以及通过离子注入杂质使高品质未掺杂的金刚石薄膜层成为n型金刚石薄膜层，或者也可以包括在基板上形成n型金刚石薄膜层的步骤，形成高在n型金刚石薄膜层上的质量未掺杂的金刚石薄膜层，并且通过离子注入杂质使高品质未掺杂的金刚石薄膜层成为p型金刚石薄膜层。

2. 发明授权

US6132816A Method for producing homoepitaxial diamond thin films 失效
标题翻译：同质外延金刚石薄膜的制造方法
公开(公告)号：US6132816A
公开(公告)日：2000-10-17
申请号：US175959
申请日：1998-10-21
申请人： Daisuke Takeuchi , Hideyo Okushi , Koji Kajimura , Hideyuki Watanabe
发明人： Daisuke Takeuchi , Hideyo Okushi , Koji Kajimura , Hideyuki Watanabe
IPC分类号： C30B29/04 , C23C16/27 , C30B25/02 , C30B25/10 , H01L21/205 , H05H1/24 , C23C16/26
CPC分类号： C23C16/274 , C23C16/279 , C30B25/105
摘要： A method for producing homoepitaxial diamond thin film is provided which includes a step of effecting plasma assisted CVD with the carbon source concentration of a mixed gas of a carbon source and hydrogen set to a first low level for depositing a high-quality homoepitaxial diamond thin film on a substrate at a low film forming rate and a step of thereafter effecting the plasma assisted CVD with said carbon source concentration set to a second level higher than the first level.
摘要翻译：提供了一种制造同质外延金刚石薄膜的方法，该方法包括以碳源和氢气的混合气体的碳源浓度为第一低水平进行等离子体辅助CVD的步骤，用于沉积高品质同质外延金刚石薄膜在低成膜速度的基板上，然后进行等离子体辅助CVD的步骤，其中所述碳源浓度设定为高于第一水平的第二水平。

3. 发明授权

US06815721B2 Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor 失效
公开(公告)号：US06815721B2
公开(公告)日：2004-11-09
申请号：US10793798
申请日：2004-03-08
申请人： Hideyo Okushi , Hideyuki Watanabe , Daisuke Takeuchi , Koji Kajimura
发明人： Hideyo Okushi , Hideyuki Watanabe , Daisuke Takeuchi , Koji Kajimura
IPC分类号： H01L310312
CPC分类号： H01L33/34 , H01L21/0405 , H01S5/32 , H01S5/3228
摘要： A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.

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