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1. 发明授权

US5757719A Page-mode memory device with multiple-level memory cells 失效
标题翻译：具有多级存储单元的页模式存储器件
公开(公告)号：US5757719A
公开(公告)日：1998-05-26
申请号：US869208
申请日：1997-06-05
申请人： Cristiano Calligaro , Roberto Gastaldi , Alessandro Manstretta , Paolo Cappelletti , Guido Torelli
发明人： Cristiano Calligaro , Roberto Gastaldi , Alessandro Manstretta , Paolo Cappelletti , Guido Torelli
IPC分类号： G11C16/02 , G11C11/56 , G11C13/00
CPC分类号： G11C11/5621 , G11C11/5642 , G11C2211/5632 , G11C2211/5634
摘要： A page-mode semiconductor memory device comprises a matrix of memory cells arranged in rows and columns, each row forming a memory page of the memory device and comprising at least one group of memory cells, memory page selection means for selecting a row of the matrix, and a plurality of sensing circuits each one associated with a respective column of the matrix. The memory cells are multiple-level memory cells which can be programmed in a plurality of c=2b(b>1) programming states to store b information bits, and the sensing circuits are serial-dichotomic sensing circuits capable of determining, in a number b of consecutive approximation steps, the b information bits stored in the memory cells, at each step one of said b information bits being determined, said at least one group of memory cells of a row forming a number b of memory words of a memory page.
摘要翻译：页模式半导体存储器件包括以行和列排列的存储器单元矩阵，每行形成存储器件的存储器页，并且包括至少一组存储器单元，存储器页选择装置，用于选择矩阵的一行，以及多个感测电路，每个感测电路与矩阵的相应列相关联。存储器单元是可以以多个c = 2b（b> 1）编程状态编程以存储b个信息位的多级存储器单元，并且感测电路是能够以数字确定的串行二分感测电路 b个连续近似步骤，存储在存储器单元中的b个信息位，在所确定的所述b个信息位的每个步骤中，所述至少一组形成存储器页的存储器字数b的存储单元组。

2. 发明授权

US5673221A Circuit and method for reading a memory cell that can store multiple bits of data 失效
标题翻译：用于读取可存储多个数据位的存储单元的电路和方法
公开(公告)号：US5673221A
公开(公告)日：1997-09-30
申请号：US592939
申请日：1996-01-29
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
IPC分类号： G11C16/04 , G11C11/56 , G11C16/02 , G11C17/00
CPC分类号： G11C11/5621 , G11C11/5642 , G11C2211/5632
摘要： A sensing circuit for serial dichotomic sensing of multiple-level memory cells which can take one programming level among a plurality of m=2.sup.n (n>=2) different programming levels, comprises biasing means for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a value belonging to a plurality of m distinct cell current values, each cell current value corresponding to one of the programming levels, a current comparator for comparing the cell current with a reference current generated by a variable reference current generator, and a successive approximation register supplied with an output signal of the current comparator and controlling the variable reference current generator. The variable reference current generator comprises an offset current generator permanently coupled to the current comparator, and m-2 distinct current generators, independently activatable by the successive approximation register, each one generating a current equal to a respective one of the plurality of cell current values.
摘要翻译：用于在多个m = 2n（n> = 2）不同编程级别中可以采用一个编程级的多级存储器单元的串行二分感测的感测电路包括偏置装置，用于以预定的方式偏置待感测的存储器单元条件，使得存储器单元以属于多个m个不同的单元电流值的值吸收单元电流，每个单元电流值对应于一个编程电平，用于将单元电流与产生的参考电流进行比较的电流比较器通过可变参考电流发生器和逐次逼近寄存器来提供电流比较器的输出信号并控制可变参考电流发生器。可变参考电流发生器包括永久地耦合到电流比较器的偏移电流发生器和由逐次逼近寄存器独立激活的m-2个不同的电流发生器，每个电流发生器产生等于多个电池电流值中的相应一个的电流。

3. 再颁专利

USRE38166E1 Circuit and method for reading a memory cell that can store multiple bits of data 有权
标题翻译：用于读取可存储多个数据位的存储单元的电路和方法
公开(公告)号：USRE38166E1
公开(公告)日：2003-07-01
申请号：US09410164
申请日：1999-09-30
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
IPC分类号： G11C1156
CPC分类号： G11C11/5621 , G11C11/5642 , G11C2211/5632
摘要： A sensing circuit for serial dichotomic sensing of multiple-level memory cells which can take one programming level among a plurality of m=2n (n>=2) different programming levels, comprises biasing means for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a value belonging to a plurality of m distinct cell current values, each cell current value corresponding to one of the programming levels, a current comparator for comparing the cell current with a reference current generated by a variable reference current generator, and a successive approximation register supplied with an output signal of the current comparator and controlling the variable reference current generator. The variable reference current generator comprises an offset current generator permanently coupled to the current comparator, and m−2 distinct current generators, independently activatable by the successive approximation register, each one generating a current equal to a respective one of the plurality of cell current values.
摘要翻译：用于在多个m = 2n（n> = 2）不同编程级别中可以采用一个编程级的多级存储器单元的串行二分感测的感测电路包括偏置装置，用于以预定的方式偏置待感测的存储器单元条件，使得存储器单元以属于多个m个不同的单元电流值的值吸收单元电流，每个单元电流值对应于一个编程电平，用于将单元电流与产生的参考电流进行比较的电流比较器通过可变参考电流发生器和逐次逼近寄存器来提供电流比较器的输出信号并控制可变参考电流发生器。可变参考电流发生器包括永久地耦合到电流比较器的偏移电流发生器和由逐次逼近寄存器独立激活的m-2个不同的电流发生器，每个电流发生器产生等于多个电池电流值中的相应一个的电流。

4. 发明授权

US5838612A Reading circuit for multilevel non volatile memory cell devices 失效
标题翻译：多电平非易失性存储单元器件的读取电路
公开(公告)号：US5838612A
公开(公告)日：1998-11-17
申请号：US869072
申请日：1997-06-04
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C16/06 , G11C11/34
CPC分类号： G11C11/5642 , G11C11/5621 , G11C2211/5631
摘要： Reading circuit for multilevel non-volatile memory cell devices having, for each cell to be read, a selection line with which is associated a load and a decoupling and control stage with a feedback loop which stabilizes the voltage on a circuit node of the selection line. To this node are connected a current replica circuit which are controlled by the feedback loop. These include loads and circuit elements homologous to those associated with the selection line of the memory cell and have an output interface circuit for connection to current comparator circuit.
摘要翻译：用于多电平非易失性存储单元器件的读取电路，对于要读取的每个单元，具有与负载和去耦合和控制级相关联的选择线，其具有稳定选择线的电路节点上的电压的反馈环路。对该节点连接由反馈回路控制的当前复制电路。这些包括与与存储器单元的选择线相关的负载和电路元件同源的负载和电路元件，并且具有用于连接到电流比较器电路的输出接口电路。

5. 发明授权

US5729490A Parallel-dichotomic serial sensing method for sensing multiple-level non-volatile memory cells, and sensing circuit for actuating such method 失效
标题翻译：用于感测多级非易失性存储单元的并行二分辨串行感测方法，以及用于启动这种方法的感测电路
公开(公告)号：US5729490A
公开(公告)日：1998-03-17
申请号：US690059
申请日：1996-07-31
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
IPC分类号： G11C11/56 , G11C7/00
CPC分类号： G11C11/5642 , G11C11/5621 , G11C2211/5632 , G11C2211/5633
摘要： A method for sensing multiple-levels non-volatile memory cells which can take one programming level among a plurality of m=2.sup.n (n>=Z) different programming levels, provides for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a value belonging to a discrete set of m distinct cell current values, each cell current value corresponding to one of said programming levels. The sensing method also provides for: simultaneously comparing the cell current with a prescribed number of reference currents having values comprised between a minimum value and a maximum value of said discrete set of m cell current values and dividing said discrete set of m cell current values in a plurality of sub-sets of cell current values, for determining the sub-set of cell current values to which the cell current belongs; repeating step (a) for the sub-set of cell current values to which the cell current belongs, until the sub-set of cell current values to which the cell current belongs comprises only one cell current value, which is the value of the current of the memory cell to be sensed.
摘要翻译：用于感测可以在多个m = 2n（n> = Z）个不同编程级别中采取一个编程电平的多级非易失性存储器单元的方法提供了在预定条件下偏置要感测的存储器单元，因此存储器单元以具有m个不同单元电流值的离散集合的值吸收单元电流，每个单元电流值对应于所述编程电平之一。感测方法还提供：同时将电池电流与规定数量的参考电流进行比较，所述规定数量的参考电流具有包括在所述离散的一组m个电池电流值的最小值和最大值之间的值，并且将所述离散的一组m个电池电流值多个子单元电流子集，用于确定单元电流所属的单元电流值的子集; 对于单元电流所属的单元电流值的子集重复步骤（a），直到单元电流所属的单元电流值的子集仅包括一个单元电流值，该单元电流值是电流值的待读取的存储单元。

6. 发明授权

US5701265A Serial dichotomic method for sensing multiple-level non-volatile memory cells, and sensing circuit implementing such method 失效
标题翻译：用于感测多级非易失性存储单元的串行二分法，以及实现这种方法的感测电路
公开(公告)号：US5701265A
公开(公告)日：1997-12-23
申请号：US593650
申请日：1996-01-29
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Guido Torelli
IPC分类号： G11C17/00 , G11C11/56 , G11C16/02 , G11C11/34
CPC分类号： G11C11/5642 , G11C11/5621 , G11C2211/5632
摘要： A serial dichotomic method for sensing multiple-level non-volatile memory cells which can take one of m=2.sup.n (n>=2) different programming levels, provides for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a value belonging to a plurality of m distinct cell current values, and for: a) comparing the cell current with a reference current which has a value comprised between a minimum value and a maximum value of said plurality of m cell current values, thus dividing said plurality of cell current values into two sub-pluralities of cell current values, and determining the sub-plurality of cell current values to which the cell current belongs; b) repeating the step a) until the sub-plurality of cell current values to which the cell current belongs comprises only one cell current value, which is the value for the current of the memory cell to be sensed.
摘要翻译：用于感测可以采用m = 2n（n> = 2）个不同编程级中的一个的多级非易失性存储器单元的串行二分法方法提供在预定条件下偏置待感测的存储器单元，使得存储器电池以具有多个m个不同电池电流值的值吸收电池电流，并且用于：a）将电池电流与参考电流进行比较，所述参考电流具有包含在所述多个m的最小值和最大值之间的值电池电流值，从而将所述多个电池电流值分成两个多个电池电流值，并确定电池电流所属的电池电流值的子数量; b）重复步骤a），直到单元电流所属的单元电流值的子多个仅包含一个单元电流值，该单元电流值是要感测的存储单元的电流的值。

7. 发明授权

US5999445A Multilevel non-volatile memory devices 失效
标题翻译：多级非易失性存储器件
公开(公告)号：US5999445A
公开(公告)日：1999-12-07
申请号：US916874
申请日：1997-08-22
申请人： Paolo Rolandi , Cristiano Calligaro , Alessandro Manstretta , Guido Torelli
发明人： Paolo Rolandi , Cristiano Calligaro , Alessandro Manstretta , Guido Torelli
IPC分类号： G11C16/02 , G11C11/56 , G11C11/34
CPC分类号： G11C11/5621 , G11C11/5628 , G11C16/102 , G11C2211/5621
摘要： In a storage device of the multi-level type, comprising a plurality of memory cells addressable through an address input each cell being adapted for storing more than one binary information element in a MOS transistor which has a control gate, and a floating gate for storing electrons to modify the threshold voltage of the transistor, and comprising a circuit enabling a Direct Memory Access (DMA) mode for directly accessing the memory cells from outside the device, the memory cells are programmed in the direct memory access mode by controlling, from outside the device, the amount of charge stored into the floating gate of each transistor.
摘要翻译：在多级类型的存储装置中，包括可通过地址输入寻址的多个存储器单元，每个单元适于在具有控制栅极的MOS晶体管中存储多于一个二进制信息元素，以及用于存储的浮动栅极电子来修改晶体管的阈值电压，并且包括能够直接存储器访问（DMA）模式的电路，用于从设备外部直接访问存储器单元，通过从外部控制来将存储器单元编程为直接存储器访问模式该器件，每个晶体管的浮置栅极存储的电荷量。

8. 发明授权

US06288594B1 Monolithically integrated selector for electrically programmable memory cell devices 有权
标题翻译：用于电可编程存储单元器件的单片选择器
公开(公告)号：US06288594B1
公开(公告)日：2001-09-11
申请号：US09674395
申请日：2000-10-30
申请人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
发明人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
IPC分类号： H03K1762
CPC分类号： G11C5/143
摘要： A monolithically integrated selector for electrically programmable memory cell devices can be switched at an output terminal (OUT) between a high voltage (HV) and a low voltage (LV). It comprises a leg (N2, N1) of fast ground discharge (GND) from the output terminal, a discharge control leg (P1, N3, N4) driving the selector switching through a phase generator (PHG).
摘要翻译：用于电可编程存储单元器件的单片集成选择器可以在高电压（HV）和低电压（LV）之间的输出端（OUT）处切换。它包括来自输出端子的快速放电（GND）的脚（N2，N1），驱动选择器切换通过相位发生器（PHG）的放电控制支路（P1，N3，N4）。

9. 发明授权

US06563737B2 Reading circuit for semiconductor non-volatile memories 有权
标题翻译：半导体非易失性存储器的读取电路
公开(公告)号：US06563737B2
公开(公告)日：2003-05-13
申请号：US09953070
申请日：2001-09-13
申请人： Osama Khouri , Alessandro Manstretta , Guido Torelli
发明人： Osama Khouri , Alessandro Manstretta , Guido Torelli
IPC分类号： G11C1606
CPC分类号： G11C7/062 , G11C16/28 , G11C2207/063
摘要： A reading circuit for semiconductor non-volatile memories connected to at least one selected cell and at least one reference cell, the circuit including current/voltage conversion circuits receiving a first current flowing through the selected cell and a second current flowing through the reference cell and providing respectively on a first circuit node a first selected cell voltage and on a second node a second reference cell voltage, at least one differential amplifier connected at the input of the first and the second nodes and having an output terminal to provide a logic signal correlated to the selected cell information, a first voltage-controlled discharge switch circuit connected to the first node and to a voltage reference, a second switch circuit connected to the second node and the voltage reference, and first and second voltage comparator circuits receiving the first selected cell voltage and the second reference cell voltage.
摘要翻译：一种用于连接到至少一个选定单元和至少一个参考单元的半导体非易失性存储器的读取电路，所述电路包括接收流过所选单元的第一电流的电流/电压转换电路和流过参考单元的第二电流，分别在第一电路节点上提供第一选择的电池电压，并在第二节点上提供第二参考电池电压，至少一个差分放大器，连接在第一和第二节点的输入处，并且具有输出端以提供相关的逻辑信号连接到所选择的单元信息，连接到第一节点和参考电压的第一压控放电开关电路，连接到第二节点的第二开关电路和电压基准，以及接收第一选择的第一和第二电压比较器电路电池电压和第二参考电池电压。

10. 发明授权

US06366496B1 Method for programming multi-level non-volatile memories by controlling the gate voltage 有权
标题翻译：通过控制栅极电压来编程多级非易失性存储器的方法
公开(公告)号：US06366496B1
公开(公告)日：2002-04-02
申请号：US09631187
申请日：2000-08-02
申请人： Guido Torelli , Alberto Modelli , Alessandro Manstretta
发明人： Guido Torelli , Alberto Modelli , Alessandro Manstretta
IPC分类号： G11C1134
CPC分类号： G11C11/5621 , G11C11/5628
摘要： When programming, for each programming pulse, a threshold voltage whose value is increased with respect to the previous programming pulse is applied to the gate terminal of each cell to be programmed. After an initial step, the increase of threshold voltage of the cell being programmed becomes equal to the applied gate voltage increase. In order to reduce the global programming time, keeping a small variability interval of threshold voltages associated with each level, to pass from a threshold level to a following one, each cell to be programmed is supplied with a plurality of consecutive pulses without verify, until it is immediately below the voltage level to be programmed, and then a verify step is performed, followed by subsequent programming and verify steps until the cell to be programmed reaches the desired threshold value.
摘要翻译：当编程时，对于每个编程脉冲，其值相对于先前编程脉冲增加的阈值电压被施加到要被编程的每个单元的栅极端子。在初始步骤之后，被编程的单元的阈值电压的增加等于施加的栅极电压增加。为了减少全局编程时间，保持与每个电平相关联的阈值电压的小变化间隔从阈值电平传递到随后的一个，要编程的每个单元被提供多个连续脉冲而不进行验证，直到它立即低于要编程的电压电平，然后执行验证步骤，然后进行后续编程和验证步骤，直到要编程的单元格达到所需的阈值。

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