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1. 发明授权

US06288594B1 Monolithically integrated selector for electrically programmable memory cell devices 有权
标题翻译：用于电可编程存储单元器件的单片选择器
公开(公告)号：US06288594B1
公开(公告)日：2001-09-11
申请号：US09674395
申请日：2000-10-30
申请人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
发明人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
IPC分类号： H03K1762
CPC分类号： G11C5/143
摘要： A monolithically integrated selector for electrically programmable memory cell devices can be switched at an output terminal (OUT) between a high voltage (HV) and a low voltage (LV). It comprises a leg (N2, N1) of fast ground discharge (GND) from the output terminal, a discharge control leg (P1, N3, N4) driving the selector switching through a phase generator (PHG).
摘要翻译：用于电可编程存储单元器件的单片集成选择器可以在高电压（HV）和低电压（LV）之间的输出端（OUT）处切换。它包括来自输出端子的快速放电（GND）的脚（N2，N1），驱动选择器切换通过相位发生器（PHG）的放电控制支路（P1，N3，N4）。

2. 发明授权

US6028793A High voltage driver circuit for a decoding circuit in multilevel non-volatile memory devices 有权
标题翻译：用于多电平非易失性存储器件中的解码电路的高电压驱动电路
公开(公告)号：US6028793A
公开(公告)日：2000-02-22
申请号：US224330
申请日：1998-12-31
申请人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
发明人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
IPC分类号： G11C16/06 , G11C8/10 , G11C11/56 , G11C16/02 , G11C16/08
CPC分类号： G11C16/08 , G11C11/5621 , G11C8/10 , G11C16/30 , G11C8/14
摘要： The invention relates to a driving circuit for row decoding which is also useful in non-volatile memory devices of the multi-level Flash type and the multi-level EPROM type and allows the overall capacitive loads as seen from the program voltage generator and the read/verify voltage generator, to be drastically reduced without involving segmentation of the decoding circuit.
摘要翻译：本发明涉及用于行解码的驱动电路，其也可用于多电平闪存型和多级EPROM型的非易失性存储器件，并且允许从编程电压发生器和读取器看到的整体容性负载 /验证电压发生器，大大减少而不涉及解码电路的分段。

3. 发明授权

US06242971B1 Monolithically integrated selector for electrically programmable memory cell devices 有权
标题翻译：用于电可编程存储单元器件的单片选择器
公开(公告)号：US06242971B1
公开(公告)日：2001-06-05
申请号：US09321961
申请日：1999-05-28
申请人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
发明人： Alessandro Manstretta , Andrea Pierin , Guido Torelli
IPC分类号： G05F110
CPC分类号： G11C16/12
摘要： A selector switch monolithically integrated to a CMOS technology circuit for electrically programmable memory cell devices having at least first and second input terminals for coupling to first and second voltage generators (HV and LV), respectively, and an output terminal. First and second field-effect selection transistors are respectively connected, via first and second terminals, between the first input terminal and the output terminal and between the second input terminal and the output terminal. These transistors are driven through control terminals at non-overlapping phases and have body terminals connected at a body circuit node which is coupled to the first and second voltage generators through a bias circuit block effective to bias the node to the higher of the instant voltages generated by the first and second generators.
摘要翻译：选择器开关单片集成到用于电可编程存储器单元器件的CMOS工艺电路，其具有至少分别用于耦合到第一和第二电压发生器（HV和LV）的第一和第二输入端子以及输出端子。第一和第二场效应选择晶体管分别经由第一和第二端子在第一输入端子和输出端子之间以及第二输入端子和输出端子之间连接。这些晶体管以不重叠的相位被驱动通过控制端子，并且具有连接在体电路节点处的主体端子，该体电极节点通过偏置电路块耦合到第一和第二电压发生器，该偏置电路块有效地将节点偏置到产生的瞬时电压中较高者由第一和第二发电机组成。

4. 发明授权

US06418051B2 Non-volatile memory device with configurable row redundancy 有权
公开(公告)号：US06418051B2
公开(公告)日：2002-07-09
申请号：US09785079
申请日：2001-02-14
申请人： Alessandro Manstretta , Rino Micheloni , Andrea Pierin , Emilio Yero
发明人： Alessandro Manstretta , Rino Micheloni , Andrea Pierin , Emilio Yero
IPC分类号： G11C1606
CPC分类号： G11C29/70
摘要： A non-volatile memory device with configurable row redundancy includes a non-volatile memory having a matrix of memory cells and a matrix of redundant memory cells, both organized into rows and columns. The memory device also includes row and column decoding circuits; read and modify circuits for reading and modifying data stored in the memory cells; and at least one associative memory matrix, also organized into rows and columns, able to store the addresses of faulty rows, and control circuits for controlling the associative memory matrix. The memory device further includes a circuit for recognizing and comparing selected row addresses with faulty row addresses contained in the associative memory matrix, such as to produce de-selection of the faulty row and selection of the corresponding redundant cell row in the event of a valid recognition; and a configuration register, also comprising a matrix of non-volatile memory cells, and associated control circuits.

5. 发明授权

US06788579B2 Method for programming nonvolatile memory cells with program and verify algorithm using a staircase voltage with varying step amplitude 有权
标题翻译：使用程序和验证算法编程非易失性存储单元的方法，使用具有不同步长幅度的阶梯电压
公开(公告)号：US06788579B2
公开(公告)日：2004-09-07
申请号：US10119523
申请日：2002-04-09
申请人： Stefano Gregori , Rino Micheloni , Andrea Pierin , Osama Khouri , Guido Torelli
发明人： Stefano Gregori , Rino Micheloni , Andrea Pierin , Osama Khouri , Guido Torelli
IPC分类号： G11C1604
CPC分类号： G11C11/5628 , G11C16/12
摘要： A method for programming a nonvolatile memory cell envisages applying in succession, to the gate terminal of the memory cell, a first and a second programming pulse trains with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next in the first programming pulse train is greater than the amplitude increment between one pulse and the next in the second programming pulse train. The programming method envisages applying, to the gate terminal of the memory cell and before the first programming pulse train, a third programming pulse train with pulse amplitude increasing in staircase fashion, in which the amplitude increment between one pulse and the next may be less than the amplitude increment in the first programming pulse train and substantially equal to the amplitude increment in the second programming pulse train, or else may be greater than the amplitude increment in the first programming pulse train.
摘要翻译：用于编程非易失性存储器单元的方法设想连续地应用到存储器单元的栅极端，第一和第二编程脉冲串，其阶梯形式的脉冲幅度增加，其中在一个脉冲和下一个脉冲之间的振幅增量第一编程脉冲序列大于第二编程脉冲串中的一个脉冲和下一个脉冲之间的振幅增量。编程方法设想在存储器单元的栅极端子和第一编程脉冲串之前施加具有阶梯式脉冲幅度增加的第三编程脉冲串，其中，一个脉冲与下一个脉冲之间的振幅增量可能小于第一编程脉冲序列中的振幅增量基本上等于第二编程脉冲串中的幅度增量，或者可以大于第一编程脉冲序列中的振幅增量。

6. 发明授权

US06542404B2 Small size, low consumption, multilevel nonvolatile memory 有权
标题翻译：小尺寸，低功耗，多级非易失性存储器
公开(公告)号：US06542404B2
公开(公告)日：2003-04-01
申请号：US09972726
申请日：2001-10-04
申请人： Andrea Pierin , Stefano Gregori , Rino Micheloni , Osama Khouri , Guido Torelli
发明人： Andrea Pierin , Stefano Gregori , Rino Micheloni , Osama Khouri , Guido Torelli
IPC分类号： G11C1604
CPC分类号： G11C16/30 , G11C5/145 , G11C7/06 , G11C11/5621 , G11C11/5642 , G11C16/26
摘要： A multilevel nonvolatile memory includes a supply line (28) supplying a supply voltage (VDD), a voltage boosting circuit (26) supplying a boosted voltage (Vp), higher than the supply voltage (VDD), a boosted line (30) connected to the voltage boosting circuit (26) and a reading circuit (25) including at least one comparator (35). The comparator (35) includes a first and a second input (35a, 35b), a first and a second output (45a, 45b), at least one amplification stage (40) connected to the boosted line (30), and a boosted line latch stage (41) connected to the supply line (28).
摘要翻译：多级非易失性存储器包括提供电源电压（VDD）的电源线（28），提供高于电源电压（VDD）的升压电压（Vp）的升压电路（26），连接的升压线路到升压电路（26）和包括至少一个比较器（35）的读取电路（25）。比较器（35）包括第一和第二输入（35a，35b），第一和第二输出（45a，45b），连接到升压线（30）的至少一个放大级（40）线路锁存级（41）连接到电源线（28）。

7. 发明授权

US06816001B2 Low power charge pump circuit 有权
标题翻译：低功耗电荷泵电路
公开(公告)号：US06816001B2
公开(公告)日：2004-11-09
申请号：US10290030
申请日：2002-11-07
申请人： Osama Khouri , Andrea Pierin , Dario Soltesz , Guido Torelli
发明人： Osama Khouri , Andrea Pierin , Dario Soltesz , Guido Torelli
IPC分类号： G05F146
CPC分类号： G11C5/145 , H02M3/073 , H02M2001/0032 , H02M2003/075 , H02M2003/077 , Y02B70/16
摘要： A charge pump circuit, connected between a first voltage reference and an output terminal, comprises at least two parallel-coupled stages having an elementary charge pump circuit connected between said first voltage reference and said output terminal, and adjustment circuitry connected between said output terminal and respective control terminals of said at least two stages. This adjustment circuitry is arranged to select for actuation an appropriate combination of these elementary stages according to the current absorbed from a load connected to the output terminal.

8. 发明授权

US06674385B2 Analog-to-digital conversion method and device, in high-density multilevel non-volatile memory devices 有权
标题翻译：模数转换方法和器件，在高密度多级非易失性存储器件中
公开(公告)号：US06674385B2
公开(公告)日：2004-01-06
申请号：US10060076
申请日：2002-01-29
申请人： Rino Micheloni , Osama Khouri , Andrea Pierin , Stefano Gregori , Guido Torelli
发明人： Rino Micheloni , Osama Khouri , Andrea Pierin , Stefano Gregori , Guido Torelli
IPC分类号： H03M112
CPC分类号： G11C11/56 , G11C27/005 , H03M1/146 , H03M1/361
摘要： An analog-to-digital conversion method and device for a multilevel non-volatile memory device that includes a multilevel memory cell. The method comprises a first step of converting the most significant bits contained in the memory cell, followed by a second step of converting the least significant bits. The first step is completed within a time interval corresponding to the rise transient of the gate voltage, and the second step is initiated at the end of the transient. Also disclosed is a scheme for error control coding in multilevel Flash memories. The n bits stored in a single memory cell are organized in different “bit-layers”, which are independent from one another. Error correction is carried out separately for each bit-layer. The correction of any failure in a single memory cell is achieved by using a simple error control code providing single-bit correction, regardless of the number of bits stored in a single cell.
摘要翻译：一种用于包括多电平存储器单元的多级非易失性存储器件的模数转换方法和装置。该方法包括转换存储单元中包含的最高有效位的第一步骤，随后转换最低有效位的第二步骤。在对应于栅极电压的上升瞬变的时间间隔内完成第一步，并且在瞬态结束时启动第二步。还公开了一种用于多电平闪存中的错误控制编码的方案。存储在单个存储器单元中的n位被组织在彼此独立的不同“位层”中。针对每个位层分别执行错误校正。通过使用提供单位校正的简单误差控制代码来实现单个存储器单元中的任何故障的校正，而不管存储在单个单元中的位数。

9. 发明授权

US06493268B1 Circuit device for performing hierarchic row decoding in non-volatile memory devices 有权
标题翻译：用于在非易失性存储器件中执行分级行解码的电路装置
公开(公告)号：US06493268B1
公开(公告)日：2002-12-10
申请号：US09905163
申请日：2001-07-12
申请人： Osama Khouri , Andrea Pierin , Rino Micheloni , Stefano Gregori , Guido Torelli , Miriam Sangalli
发明人： Osama Khouri , Andrea Pierin , Rino Micheloni , Stefano Gregori , Guido Torelli , Miriam Sangalli
IPC分类号： G11C1600
CPC分类号： G11C16/08
摘要： A circuit device for performing hierarchic row decoding in semiconductor memory devices of the non-volatile type, which memory devices include an array of memory cells with column-ordered sectors, wherein each sector has a respective group of local wordlines linked to a main wordline. The circuit device includes a main wordline driver provided at each main wordline, and a local decoder provided at each local wordline. This circuit device further comprises, for each main wordline, a dedicated path connected between the main wordline and the local decoders of the associated local wordlines and connected to an external terminal arranged to receive a read/program voltage, the dedicated path enabling transfer of the read/program voltage to the local decoders.
摘要翻译：一种用于在非易失性类型的半导体存储器件中执行分级行解码的电路装置，该存储器件包括具有列排列扇区的存储器单元阵列，其中每个扇区具有链接到主字线的相应组的本地字线。电路装置包括在每个主字线处提供的主字线驱动器和在每个本地字线处提供的本地解码器。该电路装置还包括对于每个主字线，连接在相关联的本地字线的主字线和本地解码器之间的专用路径，并连接到布置成接收读/写电压的外部端子，该专用路径使得能够传送读/编程电压到本地解码器。

10. 发明授权

US06480421B2 Circuit for reading non-volatile memories 有权
标题翻译：用于读取非易失性存储器的电路
公开(公告)号：US06480421B2
公开(公告)日：2002-11-12
申请号：US10003474
申请日：2001-10-25
申请人： Khouri Osama , Stefano Gregori , Andrea Pierin , Rino Micheloni , Sergio Coronini , Guido Torelli
发明人： Khouri Osama , Stefano Gregori , Andrea Pierin , Rino Micheloni , Sergio Coronini , Guido Torelli
IPC分类号： G11C1606
CPC分类号： G11C27/005 , G11C7/062 , G11C11/5642 , G11C16/28 , G11C2207/063
摘要： A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.
摘要翻译：用于读取非易失性存储单元的电路具有用于提供输出电流的输出端子和用于接收用于控制输出电流的电压的控制端子。读取电路包括可以与输出端子和控制端子电连接以从参考信号和输出电流产生控制电压的反馈电路。反馈电路还包括电流放大电路，其具有用于接收从参考信号和输出电流导出的电流 - 误差信号的第一端子和用于提供放大电流的第二端子。

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