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1. 发明授权

US08227736B2 Image sensor device with silicon microstructures and fabrication method thereof 有权
标题翻译：具有硅微结构的图像传感器装置及其制造方法
公开(公告)号：US08227736B2
公开(公告)日：2012-07-24
申请号：US12497146
申请日：2009-07-02
申请人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
发明人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.
摘要翻译：公开了一种图像传感器装置。图像传感器装置包括具有第一像素区域和第二像素区域的半导体衬底。第一光转换装置设置在半导体衬底的第一像素区域内以接收第一光源。第二光转换装置设置在半导体衬底的第二像素区域内，以接收与第一光源不同的第二光源。对应于第一光转换装置和第二光转换装置的半导体基板的表面分别具有允许第一像素区域相对于第一光源的反射率较低的第一微结构和第二微结构而不是第二像素区域相对于第一光源的反射率。本发明还公开了一种图像传感器装置的制造方法。

2. 发明申请

US20110175981A1 3D COLOR IMAGE SENSOR 审中-公开
标题翻译： 3D彩色图像传感器
公开(公告)号：US20110175981A1
公开(公告)日：2011-07-21
申请号：US12689905
申请日：2010-01-19
申请人： Chun-Hung Lai , Chi-Xiang Tseng , Chen-Wei Lu , I-Hsiu Chen
发明人： Chun-Hung Lai , Chi-Xiang Tseng , Chen-Wei Lu , I-Hsiu Chen
IPC分类号： H04N15/00
CPC分类号： H04N9/045 , H01L27/14607 , H01L27/14621 , H01L27/14627 , H04N5/332 , H04N5/3696 , H04N13/254 , H04N2209/047
摘要： A 3D color image sensor and a 3D optical imaging system including the 3D color image sensor are provided. The 3D color image sensor includes a semiconductor substrate, having a plurality of first photodiodes and a plurality of second photodiodes, and a wiring layer formed under the first photodiodes and the second photodiodes. A light filter array layer is disposed on the first and the second photodiodes, having a plurality of color filter patterns and infrared (IR) light filter patterns, wherein each of the IR light filter patterns receives depth information of 3D color image of an object and corresponds to the first photodiode, and each of the color filter patterns receives color image information of 3D color image of the object and corresponds to the second photodiode.
摘要翻译：提供了3D彩色图像传感器和包括3D彩色图像传感器的3D光学成像系统。 3D彩色图像传感器包括具有多个第一光电二极管和多个第二光电二极管的半导体衬底以及形成在第一光电二极管和第二光电二极管下方的布线层。光滤波器阵列层设置在第一和第二光电二极管上，具有多个滤色器图案和红外（IR）滤光器图案，其中每个IR滤光器图案都接收对象的3D彩色图像的深度信息，对应于第一光电二极管，并且每个滤色器图案接收对象的3D彩色图像的彩色图像信息，并且对应于第二光电二极管。

3. 发明申请

US20110001038A1 IMAGE SENSOR DEVICE WITH SILICON MICROSTRUCTURES AND FABRICATION METHOD THEREOF 有权
标题翻译：具有硅微结构的图像传感器装置及其制造方法
公开(公告)号：US20110001038A1
公开(公告)日：2011-01-06
申请号：US12497146
申请日：2009-07-02
申请人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
发明人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
IPC分类号： H01L27/142 , H01L21/77
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.
摘要翻译：公开了一种图像传感器装置。图像传感器装置包括具有第一像素区域和第二像素区域的半导体衬底。第一光转换装置设置在半导体衬底的第一像素区域内以接收第一光源。第二光转换装置设置在半导体衬底的第二像素区域内，以接收与第一光源不同的第二光源。对应于第一光转换装置和第二光转换装置的半导体基板的表面分别具有允许第一像素区域相对于第一光源的反射率较低的第一微结构和第二微结构而不是第二像素区域相对于第一光源的反射率。本发明还公开了一种图像传感器装置的制造方法。

4. 发明授权

US08638608B2 Selected word line dependent select gate voltage during program 有权
标题翻译：程序中所选字线相关选择栅极电压
公开(公告)号：US08638608B2
公开(公告)日：2014-01-28
申请号：US13430502
申请日：2012-03-26
申请人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
发明人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于选择用于编程的字线的位置，这可以减少或消除程序干扰。施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。这可以是源极侧或漏极侧选择晶体管。这可能会阻止或减少由于DIBL而导致的程序干扰。这也可以防止或减少由于GIDL可能导致的程序干扰。当编程至少一些字线时，负偏压可以施加到源极侧选择晶体管的栅极。在一个实施例中，当编程逐渐增加的字线时，逐渐降低的电压用于漏极侧选择晶体管的栅极。

5. 发明申请

US20100170093A1 Method for enhancing surface smoothness of ball valve stem 审中-公开
标题翻译：提高球阀杆表面平滑度的方法
公开(公告)号：US20100170093A1
公开(公告)日：2010-07-08
申请号：US12319657
申请日：2009-01-08
申请人： Chun-Hung Lai
发明人： Chun-Hung Lai
IPC分类号： B21B1/00 , B21K1/20
CPC分类号： F16K5/0647 , B21H1/18 , B23P9/02 , Y10T29/4941
摘要： A method for enhancing surface smoothness of a ball valve stem comprises contacting and pressing a surface of the ball valve stem with a pressing roller so as to even tool marks on the surface of the ball valve stem, thereby enhancing surface smoothness of the ball valve stem.
摘要翻译：一种用于提高球阀杆的表面平滑度的方法，包括用压力辊接触和压紧球阀杆的表面，以便甚至球阀杆杆表面上的工具标记，从而提高球阀杆的表面平滑度。

6. 发明授权

US07579646B2 Flash memory with deep quantum well and high-K dielectric 有权
标题翻译：具有深量子阱和高K电介质的闪存
公开(公告)号：US07579646B2
公开(公告)日：2009-08-25
申请号：US11440667
申请日：2006-05-25
申请人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Chun-Hung Lai
发明人： Ming-Tsong Wang , Tong-Chern Ong , Albert Chin , Chun-Hung Lai
IPC分类号： H01L29/08
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A flash memory cell includes a substrate and a gate structure formed on the substrate. The gate structure includes a tunneling layer over the substrate, a storage layer over the tunneling layer, a blocking layer over the storage layer, and a gate electrode over the dielectric. The storage layer preferably has a conduction band lower than a conduction band of silicon. The blocking layer is preferably formed of a high-k dielectric material.
摘要翻译：闪存单元包括形成在基板上的基板和栅极结构。栅极结构包括在衬底上的隧道层，隧道层上的存储层，存储层上的阻挡层和电介质上的栅电极。存储层优选具有比硅的导带低的导带。阻挡层优选由高k电介质材料形成。

7. 发明申请

US20130250690A1 SELECTED WORD LINE DEPENDENT SELECT GATE VOLTAGE DURING PROGRAM 有权
标题翻译：在程序期间选择的字线相关选择门电压
公开(公告)号：US20130250690A1
公开(公告)日：2013-09-26
申请号：US13430502
申请日：2012-03-26
申请人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
发明人： Chun-Hung Lai , Deepanshu Dutta , Shinji Sato , Gerrit Jan Hemink
IPC分类号： G11C16/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/10
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于选择用于编程的字线的位置，这可以减少或消除程序干扰。施加到NAND串的选择晶体管的栅极的电压可以取决于所选字线的位置。这可以是源极侧或漏极侧选择晶体管。这可能会阻止或减少由于DIBL而导致的程序干扰。这也可以防止或减少由于GIDL可能导致的程序干扰。当编程至少一些字线时，负偏压可以施加到源极侧选择晶体管的栅极。在一个实施例中，当编程逐渐增加的字线时，逐渐降低的电压用于漏极侧选择晶体管的栅极。

8. 发明申请

US20130250689A1 SELECTED WORD LINE DEPENDENT SELECT GATE DIFFUSION REGION VOLTAGE DURING PROGRAMMING 有权
标题翻译：在编程期间选择的字线相关选择门限扩展区域电压
公开(公告)号：US20130250689A1
公开(公告)日：2013-09-26
申请号：US13430494
申请日：2012-03-26
申请人： Chun-Hung Lai , Shinji Sato , Shih-Chung Lee , Gerrit Jan Hemink
发明人： Chun-Hung Lai , Shinji Sato , Shih-Chung Lee , Gerrit Jan Hemink
IPC分类号： G11C16/10
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/04 , G11C16/06 , G11C16/10 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于为编程选择的字线的位置。应用所选字线相关程序条件可能会减少或消除程序干扰。施加到公共源极线的电压可以取决于被选择用于编程的字线的位置。这可以防止或减少穿通传导，这可以防止或减少程序干扰。施加到未选择NAND串的位线的电压可能取决于选择用于编程的字线的位置。这可以防止或减少穿透传导。

9. 发明授权

US07579668B2 Method for photo-detecting and apparatus for the same 有权
标题翻译：光电检测方法及其设备
公开(公告)号：US07579668B2
公开(公告)日：2009-08-25
申请号：US11875287
申请日：2007-10-19
申请人： Chee-Wee Liu , Chun-Hung Lai , Meng-kun Chen , Wei-Shuo Ho
发明人： Chee-Wee Liu , Chun-Hung Lai , Meng-kun Chen , Wei-Shuo Ho
IPC分类号： H01L31/06 , H01L27/148 , H01L29/768 , H01L31/062 , H01L31/113
CPC分类号： H01L31/103 , H01L27/1446
摘要： A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.
摘要翻译：提供了一种用于光电检测的方法及其装置。用于光检测的装置包括第一P-N二极管和第二P-N二极管。第一PN二极管具有第一PN结，其具有第一厚度，当被光照射时，第一PN信号产生第一电信号，并且第二PN二极管具有第二PN结，第二PN结具有第二厚度，第二PN 当光照射时产生信号。第二厚度大于第一厚度，并且进行第一电信号和第二电信号的操作以获得第三电信号。

10. 发明授权

US08804430B2 Selected word line dependent select gate diffusion region voltage during programming 有权
标题翻译：选择字线依赖选择栅扩散区电压编程
公开(公告)号：US08804430B2
公开(公告)日：2014-08-12
申请号：US13430494
申请日：2012-03-26
申请人： Chun-Hung Lai , Shinji Sato , Shih-Chung Lee , Gerrit Jan Hemink
发明人： Chun-Hung Lai , Shinji Sato , Shih-Chung Lee , Gerrit Jan Hemink
IPC分类号： G11C11/34 , G11C16/04 , G11C16/10 , G11C16/06
CPC分类号： G11C16/0483 , G11C11/5628 , G11C16/04 , G11C16/06 , G11C16/10 , G11C29/021 , G11C29/028 , G11C2029/1202
摘要： Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.
摘要翻译：公开了用于操作非易失性存储器的方法和装置。一个或多个编程条件取决于为编程选择的字线的位置。应用所选字线相关程序条件可能会减少或消除程序干扰。施加到公共源极线的电压可以取决于被选择用于编程的字线的位置。这可以防止或减少穿通传导，这可以防止或减少程序干扰。施加到未选择NAND串的位线的电压可能取决于选择用于编程的字线的位置。这可以防止或减少穿透传导。

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