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1. 发明申请

US20110001038A1 IMAGE SENSOR DEVICE WITH SILICON MICROSTRUCTURES AND FABRICATION METHOD THEREOF 有权
标题翻译：具有硅微结构的图像传感器装置及其制造方法
公开(公告)号：US20110001038A1
公开(公告)日：2011-01-06
申请号：US12497146
申请日：2009-07-02
申请人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
发明人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
IPC分类号： H01L27/142 , H01L21/77
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.
摘要翻译：公开了一种图像传感器装置。图像传感器装置包括具有第一像素区域和第二像素区域的半导体衬底。第一光转换装置设置在半导体衬底的第一像素区域内以接收第一光源。第二光转换装置设置在半导体衬底的第二像素区域内，以接收与第一光源不同的第二光源。对应于第一光转换装置和第二光转换装置的半导体基板的表面分别具有允许第一像素区域相对于第一光源的反射率较低的第一微结构和第二微结构而不是第二像素区域相对于第一光源的反射率。本发明还公开了一种图像传感器装置的制造方法。

2. 发明授权

US08227736B2 Image sensor device with silicon microstructures and fabrication method thereof 有权
标题翻译：具有硅微结构的图像传感器装置及其制造方法
公开(公告)号：US08227736B2
公开(公告)日：2012-07-24
申请号：US12497146
申请日：2009-07-02
申请人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
发明人： Chi-Xiang Tseng , I-Hsiu Chen , Chen-Wei Lu , Chun-Hung Lai
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： An image sensor device is disclosed. The image sensor device includes a semiconductor substrate having a first pixel region and a second pixel region. A first photo-conversion device is disposed within the first pixel region of the semiconductor substrate to receive a first light source. A second photo-conversion device is disposed within the second pixel region of the semiconductor substrate to receive a second light source different from the first light source. The surface of the semiconductor substrate corresponding to the first photo-conversion device and the second photo-conversion device has a first microstructure and a second microstructure, respectively, permitting a reflectivity of the first pixel region with respect to the first light source to be lower than a reflectivity of the second pixel region with respect to the first light source. The invention also discloses a fabrication method of the image sensor device.
摘要翻译：公开了一种图像传感器装置。图像传感器装置包括具有第一像素区域和第二像素区域的半导体衬底。第一光转换装置设置在半导体衬底的第一像素区域内以接收第一光源。第二光转换装置设置在半导体衬底的第二像素区域内，以接收与第一光源不同的第二光源。对应于第一光转换装置和第二光转换装置的半导体基板的表面分别具有允许第一像素区域相对于第一光源的反射率较低的第一微结构和第二微结构而不是第二像素区域相对于第一光源的反射率。本发明还公开了一种图像传感器装置的制造方法。

3. 发明申请

US20110175981A1 3D COLOR IMAGE SENSOR 审中-公开
标题翻译： 3D彩色图像传感器
公开(公告)号：US20110175981A1
公开(公告)日：2011-07-21
申请号：US12689905
申请日：2010-01-19
申请人： Chun-Hung Lai , Chi-Xiang Tseng , Chen-Wei Lu , I-Hsiu Chen
发明人： Chun-Hung Lai , Chi-Xiang Tseng , Chen-Wei Lu , I-Hsiu Chen
IPC分类号： H04N15/00
CPC分类号： H04N9/045 , H01L27/14607 , H01L27/14621 , H01L27/14627 , H04N5/332 , H04N5/3696 , H04N13/254 , H04N2209/047
摘要： A 3D color image sensor and a 3D optical imaging system including the 3D color image sensor are provided. The 3D color image sensor includes a semiconductor substrate, having a plurality of first photodiodes and a plurality of second photodiodes, and a wiring layer formed under the first photodiodes and the second photodiodes. A light filter array layer is disposed on the first and the second photodiodes, having a plurality of color filter patterns and infrared (IR) light filter patterns, wherein each of the IR light filter patterns receives depth information of 3D color image of an object and corresponds to the first photodiode, and each of the color filter patterns receives color image information of 3D color image of the object and corresponds to the second photodiode.
摘要翻译：提供了3D彩色图像传感器和包括3D彩色图像传感器的3D光学成像系统。 3D彩色图像传感器包括具有多个第一光电二极管和多个第二光电二极管的半导体衬底以及形成在第一光电二极管和第二光电二极管下方的布线层。光滤波器阵列层设置在第一和第二光电二极管上，具有多个滤色器图案和红外（IR）滤光器图案，其中每个IR滤光器图案都接收对象的3D彩色图像的深度信息，对应于第一光电二极管，并且每个滤色器图案接收对象的3D彩色图像的彩色图像信息，并且对应于第二光电二极管。

4. 发明授权

US09559137B2 Color filter of illumination image sensor and method for fabricating the same 有权
标题翻译：照明图像传感器的滤色器及其制造方法
公开(公告)号：US09559137B2
公开(公告)日：2017-01-31
申请号：US12940756
申请日：2010-11-05
申请人： Hao-Min Chen , Chen-Wei Lu , Chih-Kung Chang
发明人： Hao-Min Chen , Chen-Wei Lu , Chih-Kung Chang
IPC分类号： H01L27/146
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14623
摘要： The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.
摘要翻译：本发明提供一种照明图像传感器的滤色器及其制造方法。照明图像传感器的滤色器包括由多个栅格光致抗蚀剂图案构成的遮光部，其中，遮光部覆盖照明图像传感器芯片的周边区域中的硅晶片的背面。

5. 发明申请

US20120113304A1 COLOR FILTER OF BACK SIDE ILLUMINATION IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：背面照明图像传感器的彩色滤光片及其制作方法
公开(公告)号：US20120113304A1
公开(公告)日：2012-05-10
申请号：US12940756
申请日：2010-11-05
申请人： Hao-Min CHEN , Chen-Wei Lu , Chih-Kung Chang
发明人： Hao-Min CHEN , Chen-Wei Lu , Chih-Kung Chang
IPC分类号： H04N5/335
CPC分类号： H01L27/1464 , H01L27/14621 , H01L27/14623
摘要： The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.
摘要翻译：本发明提供一种照明图像传感器的滤色器及其制造方法。照明图像传感器的滤色器包括由多个栅格光致抗蚀剂图案构成的遮光部，其中，遮光部覆盖照明图像传感器芯片的周边区域中的硅晶片的背面。

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