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    • 4. 发明授权
    • Process for fabricating plasma with feedback control on plasma density
    • 使用等离子体密度反馈控制制造等离子体的工艺
    • US06383554B1
    • 2002-05-07
    • US09654808
    • 2000-09-05
    • Cheng-Hung ChangKeh-Chyang LeouChaung LinYi-Mei YangChuen-Horng TsaiI. G. Chen
    • Cheng-Hung ChangKeh-Chyang LeouChaung LinYi-Mei YangChuen-Horng TsaiI. G. Chen
    • B05D314
    • H01J37/32082H01J37/3299
    • There is provided a process and its system for fabricating plasma with feedback control on plasma density. This process uses a heterodyne millimeter wave interferometer as a sensor to measure the plasma density in the process container and the plasma density that is needed in the plasma fabricating process, and then provides real-time information of the measurements to a digital control device which makes numerical calculations and then drives the RF power generator to change the RF output power so as to enable the plasma density in the plasma fabricating process to be close to the expected plasma density. The conventional operation parameter method is to control air pressure, RF power, gas flow quantity, temperature and so on. However, it does not control the plasma parameter that has the most direct influence on the process. Therefore, this method cannot guarantee that, in the process of fabricating wafers, different batches of wafers will be operated under similar process plasma conditions. The present invention provides a process plasma source that can be directly controlled so as to obtain process plasma source of steady quality.
    • 提供了一种用于制造等离子体的方法及其系统,其具有对等离子体密度的反馈控制。 该方法使用外差毫米波干涉仪作为传感器来测量处理容器中的等离子体密度和等离子体制造过程中所需的等离子体密度,然后将测量值的实时信息提供给数字控制装置,该数字控制装置 数值计算,然后驱动射频发射器改变射频输出功率,使等离子体制造过程中的等离子体密度接近于预期的等离子体密度。常规的操作参数方法是控制空气压力,射频功率, 气体流量,温度等。 然而,它不控制对过程有最直接影响的等离子体参数。 因此,该方法不能保证在制造晶片的过程中,不同批次的晶片将在类似的工艺等离子体条件下运行。 本发明提供可直接控制以获得质量稳定的工艺等离子体源的工艺等离子体源。
    • 7. 发明授权
    • Electron microscope, methods to determine the contact point and the contact of the probe
    • 电子显微镜,确定探针的接触点和接触的方法
    • US07435954B2
    • 2008-10-14
    • US11459359
    • 2006-07-23
    • Cheng-Hsun NienChuen-Horng TsaiKun-Ying ShinWen-Bin Jian
    • Cheng-Hsun NienChuen-Horng TsaiKun-Ying ShinWen-Bin Jian
    • H01J37/26H01J37/20
    • G01R31/307H01J2237/2594
    • An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
    • 提供适用于观察至少一个样品的电子显微镜。 样品具有至少一个测试区域,测试区域上的样品材料是半导体或导电的。 电子显微镜包括载物台,电子枪和至少一个探针。 该阶段适用于携带样品,样品不接地。 电子枪适用于产生电子束并在样品上积累电荷。 当探头与测试区域接触时,测试区域的图像对比度将发生变化。 通过探头的电流也将随接触而改变。 已经基于这些原理提供了用于确定探针在电子显微镜内开始与样品表面接触的“何时”和“在哪里”的方法。