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1. 发明授权

US06493070B1 Method for in-situ monitoring layer uniformity of sputter coating based on intensity distribution of plasma spectrum 有权
标题翻译：基于等离子体光谱强度分布的溅射涂层原位监测层均匀性的方法
公开(公告)号：US06493070B1
公开(公告)日：2002-12-10
申请号：US09642793
申请日：2000-08-22
申请人： Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
发明人： Cheng-Chung Jaing , Chuen-Horng Tsai , Jyh-Shin Chen , Ming-Hwu Cheng , Ho-Yen Hsiao , Py-Shiun Yeh , Jiann-Shiun Kao
IPC分类号： G01N2100
CPC分类号： G01N21/716
摘要： This invention discloses an in-situ monitoring method on the layer uniformity of sputter coatings in a vacuum chamber based on deconvolution of measuring plasma emission spectra. The method of the present invention started from an Ar-normalized Sr intensity distribution derived from deconvoluting the plasma spectra by using Abel inversion method, which was considered as the spatial distribution of the sputtering mass of the source target. The thickness profile on the substrate was then calculated with n-th power of cosine law model. It was observed good agreement between the calculated thickness profile based on spectroscopic measurement and experimental observation. The film uniformity for the same sputter conditions can be monitored by comparing in-situ measurement of Ar-normalized Sr intensity distribution with the standard curve, or by directly calculating thickness distribution on the substrates.
摘要翻译：本发明公开了一种基于测量等离子体发射光谱的去卷积的真空室中溅射涂层的层均匀性的现场监测方法。本发明的方法从通过使用被认为是源目标的溅射质量的空间分布的Abel反演方法来解卷积等离子体光谱的Ar归一化的Sr强度分布开始。然后用n次余弦律模型计算衬底上的厚度分布。在基于光谱测量和实验观察的计算的厚度分布之间观察到良好的一致性。通过比较Ar归一化Sr强度分布的原位测量与标准曲线，或通过直接计算衬底上的厚度分布，可以监测相同溅射条件下的膜均匀性。

2. 发明授权

US6150763A Inductively-coupled high density plasma producing apparatus and plasma processing equipment provided with the same 有权
标题翻译：电感耦合高密度等离子体生产设备及其等离子体处理设备
公开(公告)号：US6150763A
公开(公告)日：2000-11-21
申请号：US267950
申请日：1999-03-11
申请人： Keh-Chyang Leou , Chai-Hao Chang , Szu-Che Tsai , Tsang-Lang Lin , Chuen-Horng Tsai
发明人： Keh-Chyang Leou , Chai-Hao Chang , Szu-Che Tsai , Tsang-Lang Lin , Chuen-Horng Tsai
IPC分类号： H01J37/32 , H01J7/24
CPC分类号： H01J37/321
摘要： This invention relates to an inductively-coupled high density plasma producing apparatus and a plasma processing equipment having the apparatus. The plasma processing equipment consists of a shape-adjustable coil (antenna), a RF power generator, an impedance matching network, a plasma chamber, a gas supply system, and a vacuum system. The gases for producing plasma are fed into the plasma chamber. The RF power is fed into the coil to produce plasma in the plasma chamber. This invention is characterized by the provision of a shape-adjustable coil, which is used to shape the RF power profile in the plasma chamber such that the plasma density profile (uniformity) can be controlled.
摘要翻译：本发明涉及一种电感耦合高密度等离子体生产设备和具有该设备的等离子体处理设备。等离子体处理设备由形状可调线圈（天线），RF发电机，阻抗匹配网络，等离子体室，气体供应系统和真空系统组成。用于产生等离子体的气体被送入等离子体室。 RF功率被馈送到线圈中以在等离子体室中产生等离子体。本发明的特征在于提供形状可调的线圈，其用于对等离子体室中的RF功率分布进行整形，使得可以控制等离子体密度分布（均匀性）。

3. 发明申请

US20110111202A1 MULTILAYER FILM STRUCTURE, AND METHOD AND APPARATUS FOR TRANSFERRING NANO-CARBON MATERIAL 审中-公开
标题翻译：多层薄膜结构及其转移纳米碳材料的方法与装置
公开(公告)号：US20110111202A1
公开(公告)日：2011-05-12
申请号：US12704005
申请日：2010-02-11
申请人： Ching-Yuan Su , Ang-Yu Lu , Zhen-Yu Juang , Keh-Chyang Leou , Chuen-Horng Tsai
发明人： Ching-Yuan Su , Ang-Yu Lu , Zhen-Yu Juang , Keh-Chyang Leou , Chuen-Horng Tsai
IPC分类号： B32B5/18 , B32B9/00 , B32B15/04 , C23F1/00 , C23F1/08
CPC分类号： H01B1/04 , B82Y30/00 , B82Y40/00 , C01B32/158 , C23C16/0281 , C23C16/04 , C23C16/045 , C23C16/26 , H01L51/444 , Y10T428/249969 , Y10T428/30 , Y10T428/31678
摘要： The invention discloses a method and apparatus for transferring nano-carbon material. The nano-carbon material is grown, by chemical vapor deposition, on a catalyst layer provided between a first and a second oxide layer of a multilayer film structure grown on a first substrate through chemical vapor deposition, and then separated from the first substrate by etching away the first and second oxide layers by a wet etching process. The separated nano-carbon material floats on the etchant, and is then pulled up by an etch-resistant continuous conveyance device and transferred to a second substrate. And, in a further imprinting process, large area nano-carbon material can be continuously imprinted onto the second substrate to show a particularly designed pattern.
摘要翻译：本发明公开了一种用于转移纳米碳材料的方法和装置。通过化学气相沉积将纳米碳材料生长在通过化学气相沉积在第一衬底上生长的多层膜结构的第一和第二氧化物层之间的催化剂层上生长，然后通过蚀刻从第一衬底分离通过湿蚀刻工艺去除第一和第二氧化物层。分离的纳米碳材料漂浮在蚀刻剂上，然后被耐蚀刻连续输送装置拉起并转移到第二基底。而且，在另外的压印过程中，可以将大面积的纳米碳材料连续地印刷到第二基板上，以显示出特别设计的图案。

4. 发明授权

US06391515B1 Manufacturing process for preparing sol-gel optical waveguides 有权
标题翻译：制备溶胶 - 凝胶光波导的制备方法
公开(公告)号：US06391515B1
公开(公告)日：2002-05-21
申请号：US09572506
申请日：2000-05-15
申请人： Jung-Chieh Su , Chien-Kang Kao , I-Nan Lin , Chuen-Horng Tsai , Cheng-Chung Chi , Yung-Sheng Liu
发明人： Jung-Chieh Su , Chien-Kang Kao , I-Nan Lin , Chuen-Horng Tsai , Cheng-Chung Chi , Yung-Sheng Liu
IPC分类号： G03F716
CPC分类号： G02B6/138 , G02B6/132
摘要： This invention discloses a manufacturing process for preparing sol-gel optical waveguides comprising the steps of solution preparation, an optical waveguide photoresist module process, and optical waveguide molding and sintering. The solution is prepared by mixing water and alcohol to form an alcoholic solution with a properly adjusted pH value followed by mingling with tetraethylorthosilicate (TEOS) at room temperature. The optical waveguide photoresist module process comprises the steps of soft baking, exposure, development, washing by deionized water, drying by a nitrogen gun, and hard baking. The optical waveguide molding and sintering comprises the steps of spinning, sintering, and photoresist module removal.
摘要翻译：本发明公开了一种制备溶胶 - 凝胶光波导的制造方法，其包括溶液制备，光波导光致抗蚀剂模块工艺和光波导模塑和烧结步骤。通过混合水和醇来形成具有适当调节的pH值的醇溶液，然后在室温下与原硅酸四乙酯（TEOS）混合来制备溶液。光波导光致抗蚀剂模块工艺包括软烘烤，曝光，显影，用去离子水洗涤，用氮气枪干燥和硬烘烤的步骤。光波导模制和烧结包括纺丝，烧结和光致抗蚀剂模块去除的步骤。

5. 发明授权

US07435954B2 Electron microscope, methods to determine the contact point and the contact of the probe 失效
标题翻译：电子显微镜，确定探针的接触点和接触的方法
公开(公告)号：US07435954B2
公开(公告)日：2008-10-14
申请号：US11459359
申请日：2006-07-23
申请人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
发明人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
IPC分类号： H01J37/26 , H01J37/20
CPC分类号： G01R31/307 , H01J2237/2594
摘要： An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
摘要翻译：提供适用于观察至少一个样品的电子显微镜。样品具有至少一个测试区域，测试区域上的样品材料是半导体或导电的。电子显微镜包括载物台，电子枪和至少一个探针。该阶段适用于携带样品，样品不接地。电子枪适用于产生电子束并在样品上积累电荷。当探头与测试区域接触时，测试区域的图像对比度将发生变化。通过探头的电流也将随接触而改变。已经基于这些原理提供了用于确定探针在电子显微镜内开始与样品表面接触的“何时”和“在哪里”的方法。

6. 发明授权

US07226643B2 Thermal pyrolysising chemical vapor deposition method for synthesizing nano-carbon material 有权
标题翻译：用于合成纳米碳材料的热解热化学气相沉积法
公开(公告)号：US07226643B2
公开(公告)日：2007-06-05
申请号：US10341887
申请日：2003-01-13
申请人： Zhen-Yu Juang , Teng-Fang Kuo , Chuen-Horng Tsai , I-Nan Lin
发明人： Zhen-Yu Juang , Teng-Fang Kuo , Chuen-Horng Tsai , I-Nan Lin
IPC分类号： H05H1/24
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , C30B25/18 , C30B29/02 , C30B29/605
摘要： A thermal cracking chemical vapor deposition method for synthesizing a nano-carbon material is provided. The method includes steps of (a) providing a substrate, (b) spreading a catalyst on the substrate, (c) putting the substrate into a reactor, (d) introducing a carbon containing material, and (e) heating the carbon containing material, thereby the carbon containing material being cracked to provide a carbon source for forming the nano-carbon material on the substrate.
摘要翻译：提供了一种用于合成纳米碳材料的热裂化学气相沉积方法。该方法包括以下步骤：（a）提供衬底，（b）在衬底上铺展催化剂，（c）将衬底放入反应器中，（d）引入含碳材料，和（e）加热含碳材料从而含碳材料被破裂以提供用于在基材上形成纳米碳材料的碳源。

7. 发明授权

US07955488B2 Process of electrodeposition platinum and platinum-based alloy nano-particles with addition of ethylene glycol 有权
标题翻译：电沉积铂和铂基合金纳米颗粒加入乙二醇的方法
公开(公告)号：US07955488B2
公开(公告)日：2011-06-07
申请号：US11783758
申请日：2007-04-12
申请人： Ming-Chi Tsai , Chuen-Horng Tsai , Tsung-Kuang Yeh
发明人： Ming-Chi Tsai , Chuen-Horng Tsai , Tsung-Kuang Yeh
IPC分类号： C25D3/50 , C25D3/52
CPC分类号： C25D3/567
摘要： An electrodeposition process of platinum and platinum-based alloy nano-particles with addition of ethylene glycol is disclosed. An acidic solution which contains metal chloride includes at least one platinum-based chloride and the alloy thereof, and ethylene glycol are introduced into a reactor as an electrodeposition solution. By applying an external negative potential, platinum particles or platinum-based alloy particles are deposited on the substrate. The above acidic solution is able to provide ionic conductivity during electrodeposition. The added ethylene glycol effectively enhances the removal of chlorine from metal chlorides. Meanwhile, ethylene glycol is used as stabilizer to prevent the particles from aggregation onto the substrate, thereby increasing the dispersion of deposited particles.
摘要翻译：公开了加入乙二醇的铂和铂基合金纳米颗粒的电沉积工艺。含有金属氯化物的酸性溶液包括至少一种铂基氯化物及其合金，并且将乙二醇作为电沉积溶液引入反应器。通过施加外部负电位，在基板上沉积铂颗粒或铂基合金颗粒。上述酸性溶液能够在电沉积期间提供离子导电性。加入的乙二醇有效地增强了从金属氯化物中除去氯。同时，使用乙二醇作为稳定剂以防止颗粒聚集到基材上，从而增加沉积颗粒的分散。

8. 发明申请

US20100176001A1 ELECTROPLATING SOLUTION FOR MANUFACTURING NANOMETER PLATINUM AND PLATINUM BASED ALLOY PARTICLES AND METHOD THEREOF 审中-公开
标题翻译：用于制造纳米级铂和基于铂的合金颗粒的电镀解决方案及其方法
公开(公告)号：US20100176001A1
公开(公告)日：2010-07-15
申请号：US12626877
申请日：2009-11-27
申请人： Chuen-Horng Tsai , Ming-Chi Tsai , Tsung-Kuang Yeh
发明人： Chuen-Horng Tsai , Ming-Chi Tsai , Tsung-Kuang Yeh
IPC分类号： C25D1/00 , B22F9/00
CPC分类号： B22F9/24 , B22F1/0018 , B82Y30/00 , C25D3/50 , C25D3/567 , C25D5/18
摘要： The present invention generally relates to an electroplating solution for manufacturing nanometer platinum and platinum based alloy particles and a method thereof. That is, an acid solution having platinum complex compound and citric acid is provided into a reaction tank to be as an electroplating solution, then a plurality of platinum and platinum based alloy particles are deposited on the surfaces of electrodes under the condition of applying negative potentials. The acid solution is capable of effectively providing the rate of conducting ions. The citric acid can effectively promote the dispersity of the platinum and platinum based alloy particles and reduce the dimensions the platinum and platinum based alloy particles.
摘要翻译：本发明一般涉及一种用于制造纳米铂和铂基合金颗粒的电镀溶液及其方法。也就是说，将具有铂络合物和柠檬酸的酸溶液提供到作为电镀溶液的反应槽中，然后在施加负电位的条件下在电极表面上沉积多个铂和铂基合金颗粒。酸溶液能够有效地提供导电离子的速率。柠檬酸可以有效地促进铂和铂基合金颗粒的分散性，并降低铂和铂基合金颗粒的尺寸。

9. 发明申请

US20070262254A1 ELECTRON MICROSCOPE, METHODS TO DETERMINE THE CONTACT POINT AND THE CONTACT OF THE PROBE 失效
标题翻译：电子显微镜，确定接触点和探头接触的方法
公开(公告)号：US20070262254A1
公开(公告)日：2007-11-15
申请号：US11459359
申请日：2006-07-23
申请人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
发明人： Cheng-Hsun Nien , Chuen-Horng Tsai , Kun-Ying Shin , Wen-Bin Jian
IPC分类号： H01J37/26
CPC分类号： G01R31/307 , H01J2237/2594
摘要： An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.
摘要翻译：提供适用于观察至少一个样品的电子显微镜。样品具有至少一个测试区域，测试区域上的样品材料是半导体或导电的。电子显微镜包括载物台，电子枪和至少一个探针。该阶段适用于携带样品，样品不接地。电子枪适用于产生电子束并在样品上积累电荷。当探头与测试区域接触时，测试区域的图像对比度将发生变化。通过探头的电流也将随接触而改变。已经基于这些原理提供了用于确定探针在电子显微镜内开始与样品表面接触的“何时”和“在哪里”的方法。

10. 发明申请

US20110100951A1 METHOD AND APPARATUS FOR TRANSFERRING CARBONACEOUS MATERIAL LAYER 审中-公开
标题翻译：用于转移碳质材料层的方法和装置
公开(公告)号：US20110100951A1
公开(公告)日：2011-05-05
申请号：US12703800
申请日：2010-02-11
申请人： Zhen-Yu Juang , Chih-Yu Wu , Ang-Yu Lu , Keh-Chyang Leou , Fu-Rong Chen , Chuen-Horng Tsai
发明人： Zhen-Yu Juang , Chih-Yu Wu , Ang-Yu Lu , Keh-Chyang Leou , Fu-Rong Chen , Chuen-Horng Tsai
IPC分类号： C23F1/00 , B32B37/02 , B32B38/18
CPC分类号： B32B37/025 , B32B37/12 , B32B37/20 , B32B38/10 , B32B2037/246 , B32B2309/02 , B32B2310/0831 , B32B2313/04 , C23C16/01 , C23C16/26 , C23F1/18 , C23F1/28 , Y10T156/1705
摘要： In a method and apparatus for transferring carbonaceous material layer, a carbonaceous material layer is grown on a growth substrate, and a first continuous conveying unit is used to feed the growth substrate and a transfer material, so that a gluing layer of the transfer material is attached to the carbonaceous material layer on the growth substrate. Then, a transformation device changes a viscosity of the gluing layer for the latter to adhere to the carbonaceous material layer. A second continuous conveying unit is further used to transfer and then separate the mutually adhered transfer material and growth substrate from each other, so that some part of the carbonaceous material layer is transferred onto the gluing layer while other part of the carbonaceous material layer remains on the growth substrate. Thus, at least a one-layer-thickness of the carbonaceous material layer is transferred.
摘要翻译：在用于转移碳质材料层的方法和装置中，在生长衬底上生长碳质材料层，并且使用第一连续输送单元来供给生长衬底和转印材料，使得转印材料的胶合层为附着在生长衬底上的碳质材料层上。然后，转换装置改变粘合层粘附到碳质材料层上的粘合层的粘度。第二连续输送单元进一步用于将相互粘附的转移材料和生长基底彼此分离，然后将碳质材料层的一些部分转移到胶合层上，而碳质材料层的其它部分保持在其上生长底物。因此，至少一层厚度的碳质材料层被转移。

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