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1. 发明授权

US07859086B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US07859086B2
公开(公告)日：2010-12-28
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , H01L29/04 , H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

2. 发明申请

US20070215983A1 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US20070215983A1
公开(公告)日：2007-09-20
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

3. 发明授权

US08334156B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US08334156B2
公开(公告)日：2012-12-18
申请号：US12648787
申请日：2009-12-29
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L21/205
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

4. 发明申请

US20100105159A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE, AND METHODS OF FABRICATING THE SAME AND A VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME 有权
标题翻译：氮化物半导体单晶衬底，及其制造方法和使用其的垂直氮化物半导体发光二极管的方法
公开(公告)号：US20100105159A1
公开(公告)日：2010-04-29
申请号：US12648787
申请日：2009-12-29
申请人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , C30B25/02
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

5. 发明授权

US08026156B2 Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device 有权
标题翻译：氮化物系化合物层的制造方法，氮化镓衬底和垂直结构氮化物系半导体发光元件的制造方法
公开(公告)号：US08026156B2
公开(公告)日：2011-09-27
申请号：US12489819
申请日：2009-06-23
申请人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
发明人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

6. 发明申请

US20060148186A1 Method and apparatus for manufacturing gallium nitride based single crystal substrate 审中-公开
标题翻译：用于制造氮化镓基单晶衬底的方法和装置
公开(公告)号：US20060148186A1
公开(公告)日：2006-07-06
申请号：US11220020
申请日：2005-09-06
申请人： Soo Min Lee , Masayoshi Koike , Kyeong Ik Min , Cheol Kyu Kim , Sung Hwan Jang , Min Ho Kim
发明人： Soo Min Lee , Masayoshi Koike , Kyeong Ik Min , Cheol Kyu Kim , Sung Hwan Jang , Min Ho Kim
IPC分类号： H01L21/336
CPC分类号： C30B29/406 , C30B29/64 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02664
摘要： A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from the preliminary substrate under the condition that the preliminary substrate is placed in the reaction chamber.
摘要翻译：一种用于制造氮化物基单晶衬底的方法和装置。该方法包括将初步衬底放置在安装在反应室中的基座上; 在初始衬底上生长氮化物单晶层; 并且在预备衬底放置在反应室中的条件下照射激光束以将氮化物单晶层与预备衬底分离。

7. 发明授权

US07569461B2 Method of fabricating nitride-based compound layer, GaN substrate and vertical structure nitride-based semiconductor light emitting device 有权
标题翻译：氮化物系化合物层的制造方法，GaN衬底和垂直结构氮化物系半导体发光元件
公开(公告)号：US07569461B2
公开(公告)日：2009-08-04
申请号：US11471697
申请日：2006-06-21
申请人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
发明人： Soo Min Lee , Cheol Kyu Kim , Jaeun Yoo , Sung Hwan Jang , Masayoshi Koike
IPC分类号： H01L21/20
CPC分类号： H01L33/0075 , H01L21/02002 , H01L21/02389 , H01L21/02439 , H01L21/02472 , H01L21/02483 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0079
摘要： In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.
摘要翻译：在制造氮化物类化合物层的方法中，首先制备GaN衬底。在GaN衬底上形成具有预定图案的掩模层，以暴露GaN衬底的部分区域。然后在部分曝光的GaN衬底上形成缓冲层。缓冲层由具有10％以下与GaN的晶格失配的材料制成。此后，氮化物类化合物从缓冲层的顶表面朝向掩模层的顶表面横向生长，并且氮化物基化合物层垂直生长至预定厚度。此外，通过湿蚀刻除去掩模层和缓冲层，以将氮化物基化合物层与GaN衬底分离。

8. 发明授权

US07067401B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

9. 发明授权

US5897359A Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor 失效
标题翻译：制造硅/硅锗异质结双极晶体管的方法
公开(公告)号：US5897359A
公开(公告)日：1999-04-27
申请号：US987474
申请日：1997-12-09
申请人： Deok Ho Cho , Soo Min Lee , Tae Hyeon Han , Byung Ryul Ryum , Kwang Eui Pyun
发明人： Deok Ho Cho , Soo Min Lee , Tae Hyeon Han , Byung Ryul Ryum , Kwang Eui Pyun
IPC分类号： H01L29/74 , H01L21/331 , H01L29/737 , H01L21/8222
CPC分类号： H01L29/66242 , H01L29/7378
摘要： There is disclosed a method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor having a good conformity and an improved speed characteristic, which includes the steps of sequentially laminating an underlying nitride film, an oxide film, a polycrystalline silicon film and an upper nitride on a semiconductor substrate on which devices are separated and a collector is formed; sequentially etching said upper nitride film and said polycrystalline silicon film using the emitter as a mask, and then forming a side wall nitride film; selectively wet-etching said oxide film to form a side base linker opening; burying said base linker opening with a polycrystalline silicon; oxidizing said polycrystalline silicon film buried into said base linker opening and then removing said oxide film by means of the selective wet-etch process; removing said upper nitride and then forming a silicon/silicon germanium film as a base film on the exposed thereof; and forming an emitter said silicon/silicon germanium film.
摘要翻译：公开了一种制造具有良好一致性和改进的速度特性的硅/硅锗异质结双极晶体管的方法，其包括以下步骤：将下面的氮化物膜，氧化物膜，多晶硅膜和上部氮化物依次层压在半导体衬底，器件分离并形成集电极; 使用发射极作为掩模，依次蚀刻所述上部氮化物膜和所述多晶硅膜，然后形成侧壁氮化物膜; 选择性地湿蚀刻所述氧化膜以形成侧基连接器开口; 用多晶硅掩埋所述基底连接器开口; 氧化所述多晶硅膜，所述多晶硅膜埋入所述基底连接器开口中，然后通过选择性湿蚀刻工艺除去所述氧化物膜; 去除所述上部氮化物，然后在其暴露时形成硅/硅锗膜作为基膜; 以及形成所述硅/硅锗膜的发射极。

10. 发明授权

US09034850B2 Gonadotropin releasing hormone receptor antagonist, preparation method thereof and pharmaceutical composition comprising the same 有权
标题翻译：促性腺激素释放激素受体拮抗剂，其制备方法和包含其的药物组合物
公开(公告)号：US09034850B2
公开(公告)日：2015-05-19
申请号：US13511065
申请日：2010-11-19
申请人： Seon Mi Kim , Min Hee Lee , Jae Sun Kim , Hoe Chul Jung , So Young Lee , Soo Min Lee , Eun Jeong Kim , Eui Sun Park , Sung Hoon Park , Bong Yong Lee , Key An Um
发明人： Seon Mi Kim , Min Hee Lee , Jae Sun Kim , Hoe Chul Jung , So Young Lee , Soo Min Lee , Eun Jeong Kim , Eui Sun Park , Sung Hoon Park , Bong Yong Lee , Key An Um
IPC分类号： A01N57/00 , C07D239/545 , A61K31/506 , C07D239/46 , C07D401/04 , C07D403/04 , C07D405/14 , C07D213/74 , C07D253/075 , C07D401/12 , C07D401/14 , C07D403/06 , C07D403/12 , C07D405/12 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/04 , C07D491/048 , C07F9/6558
CPC分类号： C07D239/545 , A61K31/506 , C07D213/74 , C07D239/46 , C07D253/075 , C07D401/04 , C07D401/12 , C07D401/14 , C07D403/04 , C07D403/06 , C07D403/12 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/12 , C07D417/12 , C07D487/04 , C07D491/048 , C07F9/65583 , C07F9/65586
摘要： Disclosed are compounds useful as gonadotrophin-releasing hormone (“GnRH”) receptor antagonist.
摘要翻译：公开了可用作促性腺激素释放激素（“GnRH”）受体拮抗剂的化合物。

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