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1. 发明授权

US08334156B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US08334156B2
公开(公告)日：2012-12-18
申请号：US12648787
申请日：2009-12-29
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L21/205
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

2. 发明申请

US20100105159A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE, AND METHODS OF FABRICATING THE SAME AND A VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME 有权
标题翻译：氮化物半导体单晶衬底，及其制造方法和使用其的垂直氮化物半导体发光二极管的方法
公开(公告)号：US20100105159A1
公开(公告)日：2010-04-29
申请号：US12648787
申请日：2009-12-29
申请人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , C30B25/02
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

3. 发明授权

US07859086B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US07859086B2
公开(公告)日：2010-12-28
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , H01L29/04 , H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

4. 发明申请

US20070215983A1 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US20070215983A1
公开(公告)日：2007-09-20
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

5. 发明授权

US08829548B2 Light emitting device package and fabrication method thereof 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US08829548B2
公开(公告)日：2014-09-09
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

6. 发明申请

US20130020598A1 LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US20130020598A1
公开(公告)日：2013-01-24
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/50 , H01L33/62
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

7. 发明申请

US20090137075A1 Method of manufacturing vertical light emitting diode 有权
标题翻译：制造垂直发光二极管的方法
公开(公告)号：US20090137075A1
公开(公告)日：2009-05-28
申请号：US12155277
申请日：2008-06-02
申请人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/44
摘要： Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.
摘要翻译：提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

8. 发明授权

US08476639B2 Group III nitride semiconductor and group III nitride semiconductor structure 有权
标题翻译： III族氮化物半导体和III族氮化物半导体结构
公开(公告)号：US08476639B2
公开(公告)日：2013-07-02
申请号：US13323365
申请日：2011-12-12
申请人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L29/15
CPC分类号： H01L21/268 , H01L33/0062 , H01L33/16
摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
摘要翻译：提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

9. 发明授权

US07838315B2 Method of manufacturing vertical light emitting diode 有权
标题翻译：制造垂直发光二极管的方法
公开(公告)号：US07838315B2
公开(公告)日：2010-11-23
申请号：US12155277
申请日：2008-06-02
申请人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/44
摘要： Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.
摘要翻译：提供一种制造垂直LED的方法，该方法包括以下步骤：制备蓝宝石衬底; 形成其中n型氮化物半导体层，有源层和p型氮化物半导体层依次层压在蓝宝石衬底上的发光结构; 在p型氮化物半导体层上形成p电极; 在p电极上形成结构支撑层; 通过LLO（激光剥离）工艺去除蓝宝石衬底; 通过ISO（隔离）工艺将发光结构隔离成单元LED元件; 以及在隔离的发光结构的n型氮化物半导体层的每一个上形成n电极。

10. 发明授权

US08110424B2 Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
公开(公告)号：US08110424B2
公开(公告)日：2012-02-07
申请号：US12419590
申请日：2009-04-07
申请人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
发明人： Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , H01L33/0062 , H01L33/16
摘要： There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
摘要翻译：提供了一种III族氮化物半导体的表面处理方法，包括：提供包括III族极性的第一表面和与第一表面相对的具有氮极性的第二表面的III族氮化物半导体; 并且将激光束照射到第二表面上以将第二表面的氮极性改变为III族极性。

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