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1. 发明授权

US08829548B2 Light emitting device package and fabrication method thereof 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US08829548B2
公开(公告)日：2014-09-09
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

2. 发明申请

US20130020598A1 LIGHT EMITTING DEVICE PACKAGE AND FABRICATION METHOD THEREOF 有权
标题翻译：发光器件封装及其制造方法
公开(公告)号：US20130020598A1
公开(公告)日：2013-01-24
申请号：US13554026
申请日：2012-07-20
申请人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
发明人： Jong In Yang , Sung Tae Kim , Yong Il Kim , Su Yeol Lee , Seung Wan Chae , Hyung Duk Ko , Yung Ho Ryu
IPC分类号： H01L33/50 , H01L33/62
CPC分类号： H01L25/167 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
摘要翻译：发光器件封装包括：具有彼此相对的第一和第二表面的未掺杂的半导体衬底; 穿过未掺杂的半导体衬底的第一和第二导电通孔; 安装在所述第一表面的一个区域上的发光器件; 通过在未掺杂的半导体衬底的第二表面上掺杂杂质并在两个方向上具有齐纳击穿电压形成的双向齐纳二极管; 以及形成在未掺杂的半导体衬底的第二表面上的第一和第二外部电极，使得它们分别将第一和第二导电通孔连接到双向齐纳二极管区域的两端。

3. 发明授权

US07859086B2 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US07859086B2
公开(公告)日：2010-12-28
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , H01L29/04 , H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

4. 发明申请

US20070215983A1 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same 有权
标题翻译：氮化物半导体单晶衬底及其制造方法以及使用其的垂直氮化物半导体发光二极管
公开(公告)号：US20070215983A1
公开(公告)日：2007-09-20
申请号：US11723065
申请日：2007-03-16
申请人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu Kim , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L29/12
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿厚度方向分割上下区域，氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

5. 发明申请

US20100105159A1 NITRIDE SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE, AND METHODS OF FABRICATING THE SAME AND A VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME 有权
标题翻译：氮化物半导体单晶衬底，及其制造方法和使用其的垂直氮化物半导体发光二极管的方法
公开(公告)号：US20100105159A1
公开(公告)日：2010-04-29
申请号：US12648787
申请日：2009-12-29
申请人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
发明人： Cheol Kyu KIM , Yung Ho Ryu , Soo Min Lee , Jong In Yang , Tae Hyung Kim
IPC分类号： H01L33/00 , C30B25/02
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02664 , H01L33/0075
摘要： A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
摘要翻译：氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。这里，上部区域的掺杂浓度为下部区域的5倍以上。优选地，上部区域中的基板的顶表面具有Ga极性。此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

6. 发明授权

US06533892B2 Device for etching the backside of wafer 失效
标题翻译：用于蚀刻晶片背面的装置
公开(公告)号：US06533892B2
公开(公告)日：2003-03-18
申请号：US09921403
申请日：2001-08-02
申请人： Yung-Ho Ryu , Hyung-Hee Nam , Ho-Phil Jung
发明人： Yung-Ho Ryu , Hyung-Hee Nam , Ho-Phil Jung
IPC分类号： B08B300
CPC分类号： H01L21/67086
摘要： A device for etching the backside of a wafer is disclosed. The etching device directly feeds an etchant to a target wafer without using any medium, such as a conventional absorption fabric, thus uniformly etching the backside of the wafer, and prevents the wafer from coming into contact with the etchant during the removal of the wafer from the device, thus almost completely protecting the wafer from any damage. This etching device consists of a cylindrical housing having a conical bottom wall and an annular etching dam seated in the housing while forming an etchant collecting chamber and an etching bat An etchant supply unit is provided on the conical bottom wall of the housing. At least one first etchant discharging part communicates the etching bath with the collecting chamber, while at least one second etchant discharging part communicates the etchant collecting chamber with the outside. A target wafer is seated on the upper portion of the etching dam, and is etched at its backside by the etchant fed from the etchant supply unit into the etching bath The present invention also provides an etching system, having an etchant storage tank, a pump, and a flow controller, in addition to the etching device.
摘要翻译：公开了一种用于蚀刻晶片背面的装置。蚀刻装置直接将蚀刻剂馈送到目标晶片，而不使用诸如常规吸收织物的任何介质，因此均匀地蚀刻晶片的背面，并且防止晶片从晶片脱离期间与蚀刻剂接触该装置，因此几乎完全保护晶片免受任何损害。该蚀刻装置由具有锥形底壁的圆柱形壳体和安置在壳体中的环形蚀刻坝组成，同时形成蚀刻剂收集室和蚀刻棒。蚀刻剂供应单元设置在壳体的圆锥形底壁上。至少一个第一蚀刻剂排出部分将蚀刻槽与收集室连通，而至少一个第二蚀刻剂排出部分将腐蚀剂收集室与外部连通。目标晶片位于蚀刻坝的上部，并且在其背面被蚀刻剂从蚀刻剂供应单元进料到蚀刻槽中进行蚀刻。本发明还提供一种蚀刻系统，其具有蚀刻剂储存罐，泵，以及除了蚀刻装置之外的流量控制器。

7. 发明申请

US20160064611A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20160064611A1
公开(公告)日：2016-03-03
申请号：US14717942
申请日：2015-05-20
申请人： Pun Jae CHOI , Young Soo PARK , Yung Ho RYU , Tae Young PARK , Jin Gi HONG
发明人： Pun Jae CHOI , Young Soo PARK , Yung Ho RYU , Tae Young PARK , Jin Gi HONG
IPC分类号： H01L33/38 , H01L33/40 , H01L33/62 , H01L33/42
CPC分类号： H01L33/382 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/16225 , H01L2224/16245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2924/00014
摘要： A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.
摘要翻译：半导体发光器件包括具有彼此相对的第一表面和第二表面的层压半导体结构，分别形成第一表面和第二表面的第一导电类型半导体层和第二导电型半导体层，活动层第一和第二电极分别设置在叠层半导体结构的第一表面和层叠半导体结构的第二表面上。连接电极延伸到要连接到第二电极的第一表面。支撑基板设置在第二电极上，并且绝缘层使连接电极与有源层和第一导电型半导体层绝缘。

8. 发明授权

US08581293B2 Semiconductor light emitting device 有权
公开(公告)号：US08581293B2
公开(公告)日：2013-11-12
申请号：US13223877
申请日：2011-09-01
申请人： Yung Ho Ryu , Hae Yeon Hwang , Young Chul Shin
发明人： Yung Ho Ryu , Hae Yeon Hwang , Young Chul Shin
IPC分类号： H01L29/43
CPC分类号： H01L33/38 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/62
摘要： A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

9. 发明申请

US20120104449A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120104449A1
公开(公告)日：2012-05-03
申请号：US13223877
申请日：2011-09-01
申请人： Yung Ho RYU , Hae Yeon Hwang , Young Chul Shin
发明人： Yung Ho RYU , Hae Yeon Hwang , Young Chul Shin
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L27/153 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/42 , H01L33/44 , H01L33/62
摘要： A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.
摘要翻译：一种半导体发光器件包括：包括第一和第二区域的第一导电半导体层; 设置在所述第二区域上的有源层; 设置在所述有源层上的第二导电半导体层; 分别设置在第一和第二导电半导体层上的第一和第二电极分支; 电连接到所述第一电极分支并设置在所述第一电极分支上的第一电极焊盘; 以及电连接到第二电极分支并设置在第二电极分支上的第二电极焊盘。

10. 发明授权

US07442565B2 Method for manufacturing vertical structure light emitting diode 失效
标题翻译：垂直结构发光二极管的制造方法
公开(公告)号：US07442565B2
公开(公告)日：2008-10-28
申请号：US11522407
申请日：2006-09-18
申请人： Yung Ho Ryu , Hae Youn Hwang
发明人： Yung Ho Ryu , Hae Youn Hwang
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0075 , H01L2924/00
摘要： A method for manufacturing a vertical light emitting diode of the invention allows an easier process of individually separating chips. A light emitting structure is formed on a growth substrate having a plurality of device areas and at least one device isolation area. The light emitting structure has an n-type clad layer, an active layer and a p-type clad layer sequentially formed therein. Corresponding p-type electrodes are formed on the light emitting structure on the device areas. A glass substrate having through holes perforated therein is provided on the p-electrodes so that the through holes are disposed corresponding to the p-electrodes. Also, the through holes are plated with a metal material to form patterns of a plating layer on the p-electrodes. Then, the growth substrate is removed to form n-electrodes on the n-type clad layer. The glass substrate is removed via etching.
摘要翻译：本发明的垂直发光二极管的制造方法能够容易地分离芯片。在具有多个器件区域和至少一个器件隔离区域的生长衬底上形成发光结构。发光结构具有依次形成的n型覆盖层，有源层和p型覆盖层。相应的p型电极形成在器件区域上的发光结构上。在p电极上设置有在其上穿孔的玻璃基板，使得贯通孔对应于p电极。此外，通孔用金属材料镀覆以在p电极上形成电镀层的图案。然后，去除生长衬底以在n型覆盖层上形成n电极。通过蚀刻去除玻璃基板。

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