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1. 发明申请

US20060172087A1 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
标题翻译：等离子体增强化学气相沉积法形成含硅化钛的层
公开(公告)号：US20060172087A1
公开(公告)日：2006-08-03
申请号：US11394988
申请日：2006-03-30
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
IPC分类号： C23C16/14
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
摘要翻译：公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。 TiCl 4 S和至少一种硅烷首先以等于或高于TiCl 4的第一体积比与硅烷一起进料到室中，持续第一段时间。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4 S和至少一种硅烷以等于或低于TiCl 4的第二体积比与硅烷一起进料到室中，持续第二阶段时间。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

2. 发明申请

US20050079697A1 Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer 有权
标题翻译：形成层状硅化钛的等离子体增强化学气相沉积法
公开(公告)号：US20050079697A1
公开(公告)日：2005-04-14
申请号：US10666025
申请日：2003-09-17
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
IPC分类号： C23C16/42 , H01L21/285 , H01L21/44
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.
摘要翻译：公开了在衬底上形成包括层的硅化钛的化学气相沉积方法。首先将TiCl 4和至少一种硅烷以等于或高于TiCl 4与硅烷的第一体积比在第一时间段内进料至室。该比例足够高以避免钛硅化物在衬底上的可测量沉积。或者，在第一时间段内没有可测量的硅烷进料到室中。无论如何，在第一阶段之后，将TiCl 4和至少一种硅烷以等于或低于第二体积比的TiCl 4与硅烷进料至室中第二时间段。如果在第一时间段内进料至少一种硅烷，则第二体积比率低于第一体积比。无论如何，第二次进料对于等离子体有效地提高了化学气相沉积在基底上的包含硅的硅化钛。

3. 发明申请

US20060172088A1 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers 有权
公开(公告)号：US20060172088A1
公开(公告)日：2006-08-03
申请号：US11394989
申请日：2006-03-30
申请人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
发明人： Cem Basceri , Irina Vasilyeva , Ammar Derraa , Philip Campbell , Gurtej Sandhu
IPC分类号： C23C16/14
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl4 and at least one silane are first fed to the chamber at or above a first volumetric ratio of TiCl4 to silane for a first period of time. The ratio is sufficiently high to avoid measurable deposition of titanium silicide on the substrate. Alternately, no measurable silane is fed to the chamber for a first period of time. Regardless, after the first period, TiCl4 and at least one silane are fed to the chamber at or below a second volumetric ratio of TiCl4 to silane for a second period of time. If at least one silane was fed during the first period of time, the second volumetric ratio is lower than the first volumetric ratio. Regardless, the second feeding is effective to plasma enhance chemical vapor deposit a titanium silicide including layer on the substrate.

4. 发明申请

US20090127656A1 Dielectric relaxation memory 有权
标题翻译：介质松弛记忆
公开(公告)号：US20090127656A1
公开(公告)日：2009-05-21
申请号：US12289692
申请日：2008-10-31
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L29/00
CPC分类号： H01L27/1085
摘要： A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor structure, allowing the invention to be used as a memory device. A method of forming the trap cites involves an atomic layer deposition of a material at pre-determined areas in the dielectric layer.
摘要翻译：一种具有设置在两个导电电极之间的电介质层的电容器结构，其中所述电介质层包含对应于特定能量状态的至少一个电荷陷阱位置。能量状态可以用于区分电容器结构的存储器状态，从而允许本发明用作存储器件。形成陷阱的方法涉及在电介质层中的预定区域处的材料的原子层沉积。

5. 发明授权

US07388248B2 Dielectric relaxation memory 有权
标题翻译：介质松弛记忆
公开(公告)号：US07388248B2
公开(公告)日：2008-06-17
申请号：US10930774
申请日：2004-09-01
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L29/78 , H02H3/22
CPC分类号： H01L27/1085
摘要： A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to distinguish memory states for the capacitor structure, allowing the invention to be used as a memory device. A method of forming the trap cites involves an atomic layer deposition,of a material at pre-determined areas in the dielectric layer.
摘要翻译：一种具有设置在两个导电电极之间的电介质层的电容器结构，其中所述电介质层包含对应于特定能量状态的至少一个电荷陷阱位置。能量状态可以用于区分电容器结构的存储器状态，从而允许本发明用作存储器件。形成陷阱的方法涉及在电介质层中预定区域处的材料的原子层沉积。

6. 发明申请

US20070069270A1 Top electrode in a strongly oxidizing environment 审中-公开
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

7. 发明申请

US20060292814A1 Methods of forming integrated circuitry 有权
公开(公告)号：US20060292814A1
公开(公告)日：2006-12-28
申请号：US11515432
申请日：2006-08-31
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： H01L21/20
CPC分类号： H01L29/66181 , H01L28/91
摘要： In one implementation, an opening within a capacitor electrode forming layer is formed over a substrate. A spacing layer is deposited over the capacitor electrode forming layer to within the opening over at least upper portions of sidewalls of the opening. The spacing layer is formed to be laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. A spacer is formed within the opening by anisotropically etching the spacing layer. The spacer is laterally thicker at an elevationally outer portion within the opening as compared to an elevationally inner portion within the opening. After forming a first capacitor electrode layer laterally over the spacer, at least a portion of the spacer is removed and a capacitor dielectric region and a second capacitor electrode layer are formed over the first capacitor electrode layer.

8. 发明申请

US20060252221A1 Methods of forming hafnium-containing materials 有权
公开(公告)号：US20060252221A1
公开(公告)日：2006-11-09
申请号：US11485593
申请日：2006-07-11
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L21/20 , H01L21/31 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

9. 发明申请

US20060076597A1 Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers 审中-公开
公开(公告)号：US20060076597A1
公开(公告)日：2006-04-13
申请号：US11235866
申请日：2005-09-26
申请人： Vishnu Agarwal , Garo Derderian , Gurtej Sandhu , Weimin Li , Mark Visokay , Cem Basceri , Sam Yang
发明人： Vishnu Agarwal , Garo Derderian , Gurtej Sandhu , Weimin Li , Mark Visokay , Cem Basceri , Sam Yang
IPC分类号： H01L29/94
CPC分类号： H01L28/84 , H01L21/02183 , H01L21/02197 , H01L21/31637 , H01L28/55 , H01L28/65
摘要： Capacitors having increased capacitance include an enhanced-surface-area (rough-surfaced) electrically conductive layer or other layers that are compatible with the high-dielectric constant materials. In one approach, an enhanced-surface-area electrically conductive layer for such capacitors is formed by processing a ruthenium oxide layer at high temperature at or above 500° C. and low pressure 75 torr or below, most desirably 5 torr or below, to produce a roughened ruthenium layer having a textured surface with a mean feature size of at least about 100 Angstroms. The initial ruthenium oxide layer may be provided by chemical vapor deposition techniques or sputtering techniques or the like. The layer may be formed over an underlying electrically conductive layer. The processing may be performed in an inert ambient or in a reducing ambient. A nitrogen-supplying ambient or nitrogen-supplying reducing ambient may be used during the processing or afterwards to passivate the ruthenium for improved compatibility with high-dielectric-constant dielectric materials. Processing in an oxidizing ambient may also be performed to passivate the roughened layer. The roughened layer of ruthenium may be used to form an enhanced-surface-area electrically conductive layer. The resulting enhanced-surface-area electrically conductive layer may form a plate of a storage capacitor in an integrated circuit, such as in a memory cell of a DRAM or the like. In another approach, a tungsten nitride layer is provided as an first electrode of such a capacitor. The capacitor, or at least the tungsten nitride layer, is annealed to increase the capacitance of the capacitor.

10. 发明申请

US20060070637A1 Supercritical fluid technology for cleaning processing chambers and systems 审中-公开
标题翻译：用于清洁处理室和系统的超临界流体技术
公开(公告)号：US20060070637A1
公开(公告)日：2006-04-06
申请号：US11282259
申请日：2005-11-18
申请人： Cem Basceri , Gurtej Sandhu
发明人： Cem Basceri , Gurtej Sandhu
IPC分类号： B08B3/02
CPC分类号： C23C16/4407 , B08B7/0021 , B08B9/08
摘要： The invention includes a method of cleaning a processing chamber by introducing supercritical fluid into the processing chamber. A residue over an internal chamber surface is contacted with the supercritical fluid to remove the residue from the surface. The invention also includes a method of removing deposited material from internal surfaces of a processing system. A cleaning agent comprising carbon dioxide is provided in liquid phase or supercritical phase into at least a portion of the processing system. A material deposited on an internal surface of the processing system is contacted with the cleaning agent to solubilize at least a portion of the deposited material and the solubilized fraction is removed from the system. The invention further includes a processing system which includes a supercritical fluid source in selective fluid communication with a processing chamber configured to selectively flow supercritical fluid into the chamber during a chamber cleaning process.
摘要翻译：本发明包括通过将超临界流体引入处理室来清洁处理室的方法。内部室表面上的残余物与超临界流体接触以从表面除去残余物。本发明还包括从处理系统的内表面去除沉积材料的方法。包含二氧化碳的清洁剂在液相或超临界相中被提供到处理系统的至少一部分中。沉积在处理系统的内表面上的材料与清洁剂接触以溶解沉积材料的至少一部分，并且从体系中除去溶解的部分。本发明还包括处理系统，其包括与处理室选择性流体连通的超临界流体源，该处理室被配置为在室清洁过程期间选择性地将超临界流体流入室中。

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