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1. 发明申请

US20070069270A1 Top electrode in a strongly oxidizing environment 审中-公开
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

2. 发明申请

US20050147751A1 Deposition methods 失效
公开(公告)号：US20050147751A1
公开(公告)日：2005-07-07
申请号：US11075017
申请日：2005-03-08
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： C23C16/44 , C23C16/455 , C23C14/00 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455
摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

3. 发明申请

US20060249778A1 Constructions comprising hafnium oxide 有权
标题翻译：包含氧化铪的构造
公开(公告)号：US20060249778A1
公开(公告)日：2006-11-09
申请号：US11485592
申请日：2006-07-11
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L29/94 , H01L29/00
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
摘要翻译：本发明包括形成含铪材料的方法，例如氧化铪。在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。随后，利用第二反应条件在种子材料上生长第二含铪材料。第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。第二含铪材料可以是例如非晶相。然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

4. 发明申请

US20070026601A1 Dram constructions and electronic systems 有权
标题翻译：戏剧建筑和电子系统
公开(公告)号：US20070026601A1
公开(公告)日：2007-02-01
申请号：US11517209
申请日：2006-09-06
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L27/10855 , H01L27/10852 , H01L28/40 , H01L28/57
摘要： The invention includes methods in which metal oxide dielectric materials are deposited over barrier layers. The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
摘要翻译：本发明包括其中金属氧化物电介质材料沉积在阻挡层上的方法。阻挡层可以包括金属和碳，硼和氮中的一种或多种的组合物，并且介电材料的金属氧化物可以包含与阻挡层相同的金属。电介质材料/阻挡层结构可以结合到电容器中。电容器可以用在例如DRAM单元中，DRAM单元又可以用在电子系统中。

5. 发明申请

US20060205228A1 Atomic layer deposition methods 有权
标题翻译：原子层沉积法
公开(公告)号：US20060205228A1
公开(公告)日：2006-09-14
申请号：US11414407
申请日：2006-04-28
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
摘要翻译：本发明包括在基板上形成沉积的组合物层的原子层沉积方法。该方法包括将半导体衬底定位在原子层沉积室内。在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。材料粘附到室内部件表面，从而依次形成。在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。在反应气体流动之后，重复这种顺序形成。考虑进一步的实现。

6. 发明申请

US20060205227A1 Atomic layer deposition methods 有权
公开(公告)号：US20060205227A1
公开(公告)日：2006-09-14
申请号：US11413438
申请日：2006-04-28
申请人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
发明人： Demetrius Sarigiannis , Garo Derderian , Cem Basceri , Gurtej Sandhu , F. Gealy , Chris Carlson
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/32051 , C23C16/4404 , C23C16/4405 , C23C16/45531 , C23C16/45534 , H01L21/02178 , H01L21/02186 , H01L21/0228 , H01L21/28562 , H01L21/3141 , H01L21/31616
摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

7. 发明申请

US20060252221A1 Methods of forming hafnium-containing materials 有权
公开(公告)号：US20060252221A1
公开(公告)日：2006-11-09
申请号：US11485593
申请日：2006-07-11
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01L21/20 , H01L21/31 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.

8. 发明申请

US20050026458A1 Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and constructions comprising hafnium oxide 有权
标题翻译：形成含铪材料的方法，形成氧化铪的方法和包含氧化铪的结构
公开(公告)号：US20050026458A1
公开(公告)日：2005-02-03
申请号：US10928547
申请日：2004-08-26
申请人： Cem Basceri , F. Gealy , Gurtej Sandhu
发明人： Cem Basceri , F. Gealy , Gurtej Sandhu
IPC分类号： H01G4/06 , H01G4/12 , H01G4/33 , H01L21/02 , H01L21/469 , H01L21/8242
CPC分类号： H01G4/33 , H01G4/1209 , H01G4/1272 , H01L21/31645 , H01L27/10852 , H01L28/60 , H01L28/65 , H01L28/90 , H01L28/91 , H01L29/7833
摘要： The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crystalline phase and orientation over the substrate. Subsequently, second reaction conditions are utilized to grow second hafnium-containing material over the seed material. The second hafnium-containing material is in a crystalline phase and/or orientation different from the crystalline phase and orientation of the hafnium-containing seed material. The second hafnium-containing material can be, for example, in an amorphous phase. The seed material is then utilized to induce a desired crystalline phase and orientation in the second hafnium-containing material. The invention also includes capacitor constructions utilizing hafnium-containing materials, and circuit assemblies comprising the capacitor constructions.
摘要翻译：本发明包括形成含铪材料的方法，例如氧化铪。在一个方面，提供了半导体衬底，并且利用第一反应条件来形成在衬底上所需的结晶相和取向的含铪种子材料。随后，利用第二反应条件在种子材料上生长第二含铪材料。第二含铪材料处于与含铪种子材料的结晶相和取向不同的结晶相和/或取向。第二含铪材料可以是例如非晶相。然后将种子材料用于在第二含铪材料中诱导所需的结晶相和取向。本发明还包括使用含铪材料的电容器结构和包括电容器结构的电路组件。

9. 发明申请

US20060046440A1 Methods of forming layers comprising epitaxial silicon 有权
公开(公告)号：US20060046440A1
公开(公告)日：2006-03-02
申请号：US10932151
申请日：2004-09-01
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
IPC分类号： H01L21/20
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02658
摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.

10. 发明申请

US20060264010A1 Methods of forming layers comprising epitaxial silicon 有权
标题翻译：形成包含外延硅的层的方法
公开(公告)号：US20060264010A1
公开(公告)日：2006-11-23
申请号：US11497689
申请日：2006-07-31
申请人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
发明人： Nirmal Ramaswamy , Gurtej Sandhu , Chris Carlson , F. Gealy
IPC分类号： H01L21/20
CPC分类号： H01L29/66787 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02658
摘要： The invention includes methods of forming layers comprising epitaxial silicon. In one implementation, an opening is formed within a first material received over a monocrystalline material. Opposing sidewalls of the opening are lined with a second material, with monocrystalline material being exposed at a base of the second material-lined opening. A silicon-comprising layer is epitaxially grown from the exposed monocrystalline material within the second material-lined opening. At least a portion of the second material lining is in situ removed. Other aspects and implementations are contemplated.
摘要翻译：本发明包括形成包含外延硅的层的方法。在一个实施方案中，在通过单晶材料接收的第一材料内形成开口。开口的相对侧壁衬有第二材料，其中单晶材料暴露在第二材料衬里开口的基部处。在第二材料衬里的开口内从暴露的单晶材料外延生长含硅层。第二材料衬里的至少一部分被原位去除。考虑了其他方面和实现。

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