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1. 发明申请

US20070069270A1 Top electrode in a strongly oxidizing environment 审中-公开
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

2. 发明申请

US20060252201A1 Capacitor constructions 失效
标题翻译：电容器结构
公开(公告)号：US20060252201A1
公开(公告)日：2006-11-09
申请号：US11485926
申请日：2006-07-12
申请人： Marsela Pontoh , Cem Basceri , Thomas Graettinger
发明人： Marsela Pontoh , Cem Basceri , Thomas Graettinger
IPC分类号： H01L21/8242
CPC分类号： H01L28/84 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L28/82 , H01L28/91 , Y10S438/964
摘要： The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.
摘要翻译：本发明包括形成坚固的导电表面的方法。在一种方法中，跨越衬底形成层，并且随后至少部分地解离以形成延伸到衬底的间隙。形成导电表面以跨越至少部分解离的层并且在间隙内延伸。导电表面具有由至少部分解离的层和间隙赋予的粗糙的形貌。地形坚固的表面可以结合到电容器结构中。电容器结构可以并入DRAM单元中，并且这样的DRAM单元可以被并入到电气系统中。

3. 发明申请

US20080012093A1 Capacitor constructions 失效
标题翻译：电容器结构
公开(公告)号：US20080012093A1
公开(公告)日：2008-01-17
申请号：US11859116
申请日：2007-09-21
申请人： Marsela Pontoh , Cem Basceri , Thomas Graettinger
发明人： Marsela Pontoh , Cem Basceri , Thomas Graettinger
IPC分类号： H01L29/92
CPC分类号： H01L28/84 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L28/82 , H01L28/91 , Y10S438/964
摘要： The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.
摘要翻译：本发明包括形成坚固的导电表面的方法。在一种方法中，跨越衬底形成层，并且随后至少部分地解离以形成延伸到衬底的间隙。形成导电表面以跨越至少部分解离的层并且在间隙内延伸。导电表面具有由至少部分解离的层和间隙赋予的粗糙的形貌。地形坚固的表面可以结合到电容器结构中。电容器结构可以并入DRAM单元中，并且这样的DRAM单元可以被并入到电气系统中。

4. 发明申请

US20060274477A1 DRAM cells and electronic systems 有权
标题翻译： DRAM单元和电子系统
公开(公告)号：US20060274477A1
公开(公告)日：2006-12-07
申请号：US11504935
申请日：2006-08-15
申请人： Cem Basceri , Thomas Graettinger
发明人： Cem Basceri , Thomas Graettinger
IPC分类号： H01G4/06
CPC分类号： H01L28/40 , H01G4/1209 , H01G4/228 , H01G4/33 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L23/5223 , H01L27/10852 , H01L27/11502 , H01L28/56 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： The invention includes capacitor constructions comprising a layer of aluminum oxide between a high-k dielectric material and a layer comprising titanium and nitrogen. The layer comprising titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.
摘要翻译：本发明包括在高k介电材料和包含钛和氮的层之间包含一层氧化铝的电容器结构。包含钛和氮的层可以是例如氮化钛和/或硼掺杂的氮化钛。电容器结构可以并入到DRAM单元中，这又可以并入到电子系统中。本发明还包括形成电容器结构的方法。

5. 发明申请

US20070075349A1 Semiconductor constructions 失效
标题翻译：半导体结构
公开(公告)号：US20070075349A1
公开(公告)日：2007-04-05
申请号：US11591254
申请日：2006-10-31
申请人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
发明人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译：本发明包括沉积贵金属的方法。提供基板。衬底具有第一区域和第二区域。第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。本发明还包括电容器结构和形成电容器结构的方法。

6. 发明申请

US20060001161A1 Electrical contact for high dielectric constant capacitors and method for fabricating the same 审中-公开
公开(公告)号：US20060001161A1
公开(公告)日：2006-01-05
申请号：US11215238
申请日：2005-08-30
申请人： Thomas Graettinger , F. Gealy
发明人： Thomas Graettinger , F. Gealy
IPC分类号： H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7687 , H01L21/28518 , H01L21/76829 , H01L21/76831 , H01L21/76855 , H01L21/76897 , H01L23/485 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.

7. 发明申请

US20050104111A1 DRAM constructions, memory arrays and semiconductor constructions 有权
标题翻译： DRAM结构，存储器阵列和半导体结构
公开(公告)号：US20050104111A1
公开(公告)日：2005-05-19
申请号：US11015689
申请日：2004-12-17
申请人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
发明人： Cancheepuram Srividya , F. Gealy , Thomas Graettinger
IPC分类号： H01L21/02 , H01L21/334 , H01L21/4763 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L28/65 , H01L27/1085 , H01L27/10852 , H01L27/1087 , H01L28/84 , H01L29/66181
摘要： The invention includes a method of depositing a noble metal. A substrate is provided. The substrate has a first region and a second region. The first and second regions are exposed to a mixture comprising a precursor of a noble metal and an oxidant. During the exposure, a layer containing the noble metal is selectively deposited onto the first region relative to the second region. In particular applications, the first region can comprise borophosphosilicate glass, and the second region can comprise either aluminum oxide or doped non-oxidized silicon. The invention also includes capacitor constructions and methods of forming capacitor constructions.
摘要翻译：本发明包括沉积贵金属的方法。提供基板。衬底具有第一区域和第二区域。第一和第二区域暴露于包含贵金属和氧化剂的前体的混合物中。在曝光期间，包含贵金属的层相对于第二区域选择性地沉积在第一区域上。在具体应用中，第一区域可以包括硼磷硅酸盐玻璃，并且第二区域可以包括氧化铝或掺杂的非氧化硅。本发明还包括电容器结构和形成电容器结构的方法。

8. 发明申请

US20050014328A1 Electrical contact for high dielectric constant capacitors and method for fabricating the same 审中-公开
标题翻译：高介电常数电容器的电接点及其制造方法
公开(公告)号：US20050014328A1
公开(公告)日：2005-01-20
申请号：US10920840
申请日：2004-08-18
申请人： Thomas Graettinger , F. Gealy
发明人： Thomas Graettinger , F. Gealy
IPC分类号： H01L21/02 , H01L21/285 , H01L21/60 , H01L21/768 , H01L21/8242 , H01L23/485 , H01L21/8238
CPC分类号： H01L21/7687 , H01L21/28518 , H01L21/76829 , H01L21/76831 , H01L21/76855 , H01L21/76897 , H01L23/485 , H01L27/10855 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： An electrical contact includes a non-conductive spacer surrounding conductive plug material along the full height of the contact. The spacer inhibits oxide and other diffusion through the contact. In the illustrated embodiment, the contact includes metals or metal oxides which are resistant to oxidation, and additional conductive barrier layers. The contact is particularly useful in integrated circuits which include high dielectric constant materials.
摘要翻译：电触点包括围绕接触的整个高度的导电插塞材料的非导电间隔物。间隔物通过接触体阻止氧化物和其它扩散。在所示实施例中，触点包括耐氧化的金属或金属氧化物，以及附加的导电阻挡层。该接触在包括高介电常数材料的集成电路中特别有用。

9. 发明申请

US20060120019A1 Method of forming a capacitor 审中-公开
标题翻译：形成电容器的方法
公开(公告)号：US20060120019A1
公开(公告)日：2006-06-08
申请号：US11326018
申请日：2006-01-05
申请人： F. Gealy , Thomas Graettinger
发明人： F. Gealy , Thomas Graettinger
IPC分类号： H01G4/228
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a capacitor are disclosed. The methods may comprise the steps of forming a substrate assembly and forming a first electrode on the substrate assembly. The first electrode may be formed to include at least one non-smooth surface and may be formed from a material selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The methods may also comprise the step of forming a dielectric on the first electrode and an uppermost surface of the substrate assembly, and forming a second electrode on the dielectric. The second electrode may be formed to include at least one non-smooth surface. Also, the dielectric and the second electrode may be formed only within the first electrode.
摘要翻译：公开了形成电容器的方法。该方法可以包括形成衬底组件并在衬底组件上形成第一电极的步骤。第一电极可以形成为包括至少一个非光滑表面，并且可以由选自过渡金属，导电氧化物，其合金及其组合的材料形成。所述方法还可以包括在所述第一电极和所述基板组件的最上表面上形成电介质的步骤，以及在所述电介质上形成第二电极。第二电极可以形成为包括至少一个非光滑表面。此外，电介质和第二电极可以仅形成在第一电极内。

10. 发明申请

US20060097348A1 Structures having an electrode formed from a transition metal or a conductive metal-oxide 审中-公开
标题翻译：具有由过渡金属或导电金属氧化物形成的电极的结构
公开(公告)号：US20060097348A1
公开(公告)日：2006-05-11
申请号：US11315638
申请日：2005-12-22
申请人： F. Gealy , Thomas Graettinger
发明人： F. Gealy , Thomas Graettinger
IPC分类号： H01L29/00 , H01L29/94
CPC分类号： H01L28/90 , H01G4/33 , H01L23/5223 , H01L28/55 , H01L28/65 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： Structures having an electrode formed from a transition metal or a conductive metal oxide are disclosed. The structures may comprise a first electrode made of a material selected from the group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof The first electrode may comprise a first non-smooth surface, and the first non-smooth surface may comprise a concave hemispherical grain. The structures may also comprise a dielectric in contact with the first electrode and a surface of a substrate assembly.
摘要翻译：公开了具有由过渡金属或导电金属氧化物形成的电极的结构。所述结构可以包括由选自过渡金属，导电金属氧化物，其合金及其组合的材料制成的第一电极。第一电极可以包括第一非光滑表面，并且第一非光滑表面可以包括凹的半球形颗粒。该结构还可以包括与第一电极和衬底组件的表面接触的电介质。

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