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1. 发明申请

WO2009117048A3 SYSTEM AND METHODS FOR TARGET MATERIAL DELIVERY IN A LASER PRODUCED PLASMA EUV LIGHT SOURCE 审中-公开
标题翻译：激光生产等离子体光源的目标物质输送系统与方法
公开(公告)号：WO2009117048A3
公开(公告)日：2009-12-30
申请号：PCT/US2009000994
申请日：2009-02-17
申请人： CYMER INC , VASCHENKO GEORGIY O , BYKANOV ALEXANDER N , BOWERING NORBERT R , BRANDT DAVID C , ERSHOV ALEXANDER I , SIMMONS RODNEY D , KHODYKIN OLEH V , FOMENKOV IGOR V
发明人： VASCHENKO GEORGIY O , BYKANOV ALEXANDER N , BOWERING NORBERT R , BRANDT DAVID C , ERSHOV ALEXANDER I , SIMMONS RODNEY D , KHODYKIN OLEH V , FOMENKOV IGOR V
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/006 , H05G2/008
摘要： Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.
摘要翻译：本文公开的装置可以包括具有限定旋转轴线和圆形周边的旋转表面的EUV反射光学元件。光学元件可以被定位成相对于水平面以非零角度倾斜轴，并且在水平面中建立周边的垂直投影，其中周边突起界定水平面中的一个区域。该装置还可以包括传送目标材料的系统，该系统具有位于水平面内的区域外的外围突起的边界材料释放点和产生用于照射目标材料产生的激光束的系统 EUV排放。

2. 发明申请

WO2008105989A3 LASER PRODUCED PLASMA EUV LIGHT SOURCE 审中-公开
标题翻译：激光生产等离子体光源
公开(公告)号：WO2008105989A3
公开(公告)日：2009-02-19
申请号：PCT/US2008001349
申请日：2008-02-01
申请人： CYMER INC , BYKANOV ALEXANDER N , BOWERING NORBERT R , FOMENKOV IGOR V , BRANDT DAVID C , ERSHOV ALEXANDER I , KHODYKIN OLEH V , PARTLO WILLIAM N
发明人： BYKANOV ALEXANDER N , BOWERING NORBERT R , FOMENKOV IGOR V , BRANDT DAVID C , ERSHOV ALEXANDER I , KHODYKIN OLEH V , PARTLO WILLIAM N
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033 , G03F7/70908 , G03F7/70983 , H05G2/003 , H05G2/008
摘要： A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic, hi one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.
摘要翻译：公开了一种可以包括在等离子体位置处产生等离子体的系统，等离子体产生EUV辐射和离开等离子体的离子的装置。该装置还可以包括一个光学元件，例如多个远离现场的多层反射镜，以及设置在等离子体和光学元件之间的流动气体，该气体建立足以在该距离上操作的气体压力， d，在离子到达光学器件之前，将离子能量降低到预选值以下。在一个实施方案中，气体可以包含氢气，并且在特定的实施方案中，气体可以包含大于50体积％的氢气。

3. 发明公开

EP2181449A4 SYSTEM MANAGING GAS FLOW BETWEEN CHAMBERS OF AN EXTREME ULTRAVIOLET (EUV) PHOTOLITHOGRAPHY APPARATUS 有权
标题翻译：系统，用于调节玻璃流EUV光刻设备的照片室之间
公开(公告)号：EP2181449A4
公开(公告)日：2012-02-08
申请号：EP08795348
申请日：2008-08-15
申请人： CYMER INC
发明人： BYKANOV ALEXANDER N , BRANDT DAVID C , FOMENKOV IGOR C , PARTLO WILLIAM N
IPC分类号： G21G4/00
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033 , G03F7/70808 , G03F7/70841 , G03F7/70883 , G03F7/70908

4. 发明公开

EP2266375A4 SYSTEM AND METHODS FOR TARGET MATERIAL DELIVERY IN A LASER PRODUCED PLASMA EUV LIGHT SOURCE 有权
标题翻译：系统和方法的靶材料供应激光产生等离子体EUV光源
公开(公告)号：EP2266375A4
公开(公告)日：2012-01-25
申请号：EP09722017
申请日：2009-02-17
申请人： CYMER INC
发明人： VASCHENKO GEORGIY O , BYKANOV ALEXANDER N , BOWERING NORBERT R , BRANDT DAVID C , ERSHOV ALEXANDER I , SIMMONS RODNEY D , KHODYKIN OLEH V , FOMENKOV IGOR V
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/006 , H05G2/008

5. 发明公开

EP2095693A4 LASER PRODUCED PLASMA EUV LIGHT SOURCE 有权
标题翻译： LASERPRODUZIERTE PLASMA-EUV-LICHTQUELLE
公开(公告)号：EP2095693A4
公开(公告)日：2010-11-03
申请号：EP07862537
申请日：2007-12-04
申请人： CYMER INC
发明人： HANSSON BJORN A M , BYKANOV ALEXANDER N , FOMENKOV IGOR V , BRANDT DAVID C
IPC分类号： H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed which may comprise a plurality of targets, e.g., tin droplets, and a system generating pre-pulses and main-pulses with the pre-pulses for irradiating targets to produce expanded targets. The system may further comprise a continuously pumped laser device generating the main pulses with the main pulses for irradiating expanded targets to produce a burst of EUV light pulses. The system may also have a controller varying at least one pre-pulse parameter during the burst of EUV light pulses. In addition, the EUV light source may also include an instrument measuring an intensity of at least one EUV light pulse within a burst of EUV light pulses and providing a feedback signal to the controller to vary at least one pre-pulse parameter during the burst of EUV light pulses to produce a burst of EUV pulses having a pre-selected dose.
摘要翻译：公开了一种EUV光源，其可以包括多个目标，例如锡滴，以及产生预脉冲和主脉冲的系统，其中具有用于照射目标的预脉冲以产生扩展的目标。该系统还可以包括连续泵浦的激光器装置，其产生具有用于照射扩展的目标的主脉冲以产生EUV光脉冲的脉冲的主脉冲。该系统还可以具有在EUV光脉冲的突发期间改变至少一个预脉冲参数的控制器。此外，EUV光源还可以包括测量EUV光脉冲的脉冲串内的至少一个EUV光脉冲的强度的仪器，并且向控制器提供反馈信号以在脉冲串期间改变至少一个预脉冲参数 EUV光脉冲以产生具有预选剂量的EUV脉冲的脉冲串。

6. 发明公开

EP2181448A4 GAS MANAGEMENT SYSTEM FOR A LASER-PRODUCED-PLASMA EUV LIGHT SOURCE 有权转让
标题翻译：基于等离子体LASERERZEUGTEM气体处理系统用于EUV光源
公开(公告)号：EP2181448A4
公开(公告)日：2012-02-08
申请号：EP08795347
申请日：2008-08-15
申请人： CYMER INC
发明人： BYKANOV ALEXANDER N , ERSHOV ALEXANDER I , FOMENKOV IGOR V , BRANDT DAVID C
IPC分类号： G21G4/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70175 , G03F7/70916 , H05G2/005 , H05G2/008 , Y10S422/906
摘要： Devices and corresponding methods of use are described herein which may comprise an enclosing structure defining a closed loop flow path and a system generating a plasma at a plasma site, e.g. laser produced plasma system, where the plasma site may be in fluid communication with the flow path. For the device, a gas may be disposed in the enclosing structure which may include an ion-stopping buffer gas and/or an etchant. A pump may be provided to force the gas through the closed loop flow path. One or more heat exchangers removing heat from gas flowing in the flow path may be provided. In some arrangements, a filter may be used to remove at least a portion of a target species from gas flowing in the flow path.

7. 发明公开

EP2115406A4 LASER PRODUCED PLASMA EUV LIGHT SOURCE 有权转让
标题翻译：激光产生的等离子体EUV光源
公开(公告)号：EP2115406A4
公开(公告)日：2010-04-28
申请号：EP08713374
申请日：2008-02-01
申请人： CYMER INC
发明人： BYKANOV ALEXANDER N , BOWERING NORBERT R , FOMENKOV IGOR V , BRANDT DAVID C , ERSHOV ALEXANDER I , KHODYKIN OLEH V , PARTLO WILLIAM N
IPC分类号： G03F7/20 , H05G2/00
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033 , G03F7/70908 , G03F7/70983 , H05G2/003 , H05G2/008
摘要： A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

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