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1. 发明申请

WO2010092471A2 METHOD AND DEVICE FOR COATING PLANAR SUBSTRATES WITH CHALCOGENS 审中-公开
标题翻译：用于将具有恶性瘤的平面基底涂覆的方法和装置
公开(公告)号：WO2010092471A2
公开(公告)日：2010-08-19
申请号：PCT/IB2010/000280
申请日：2010-02-15
申请人： CENTROTHERM PHOTOVOLTAICS AG , BAIER, Jörg , KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
发明人： BAIER, Jörg , KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
IPC分类号： C23C14/06 , C23C16/04 , C23C14/24 , C23C14/56
CPC分类号： C23C14/246 , C23C14/0623 , C23C14/228 , C23C14/56 , C23C14/566
摘要： The invention relates to a method and a device for coating planar substrates with chalcogens in the form of thin layers. The invention is intended to provide a fast and cost-effective coating of planar substrates with chalcogens, with a controlled and safe removal of the uncondensed chalcogen and a device suitable for carrying out the method. This is achieved by forming an inlet side and outlet side gas lock (6, 7) for the oxygen-tight closure of a process chamber (5), introducing one or more substrates to be coated, said substrates being temperature-regulated to a predetermined temperature, into the process chamber (5), introducing a chalcogen vapour/carrier gas mixture into the process chamber (5) which has a transport channel (4), above the substrates, forming a flow of the chalcogen vapour/carrier gas mixture through the transport channel (4) between the inlet side and outlet side gas locks (6, 7) and forming a chalcogen layer on the substrates by means of PVD during a predetermined dwell time and removing the chalcogen vapour which has not condensed onto the substrates together with the carrier gas between the gas locks, and removal of the substrates after the predetermined process time has elapsed.
摘要翻译：本发明涉及一种用薄层形式的硫族元素涂覆平面基底的方法和装置。本发明旨在提供一种具有硫族元素的平面基底的快速且成本有效的涂层，其中控制和安全地去除未冷凝的硫族元素和适于实施该方法的装置。这通过形成用于处理室（5）的不透氧闭合的入口侧和出口侧气锁（6,7），引入一个或多个待涂布的基材，所述基材被温度调节至预定的（5）中，将硫属元素蒸气/载气混合物引入具有传输通道（4）的处理室（5）中，在所述衬底上方形成硫属元素蒸气/载气混合物流在入口侧和出口侧气体锁定装置（6,7）之间的传送通道（4），并且在预定的停留时间期间通过PVD在衬底上形成硫族元素层，并且将尚未冷凝到衬底上的硫族元素蒸气一起移除载气在气锁之间，并且在预定的处理时间过去之后移除基板。

2. 发明申请

WO2010100561A1 PROCESS AND DEVICE FOR THE THERMAL CONVERSION OF METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS USING A CHALCOGEN SOURCE 审中-公开
标题翻译：金属前驱体层转换成半导体层的过程和器件
公开(公告)号：WO2010100561A1
公开(公告)日：2010-09-10
申请号：PCT/IB2010/000472
申请日：2010-03-08
申请人： CENTROTHERM PHOTOVOLTAICS AG , KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
发明人： KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
IPC分类号： C23C14/06 , C23C14/58
CPC分类号： C23C14/0623 , C23C14/5866
摘要： The present invention relates to a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens..This is achieved by forming an inlet-side and outlet-side gas lock (4.1, 4.2, 4.3, 4.4) for closing a furnace chamber (1) in an oxygen-tight manner, introducing one or more substrates (6) prepared with at least one metallic precursor layer into the furnace chamber (1), introducing a chalcogen vapour /carrier gas mixture (10) above the substrates (6) at a pressure close to atmospheric pressure, said mixture being distributed as uniformly as possible over the width of the substrates (6), heating the substrates (6) in the chalcogen vapour/carrier gas atmosphere (10) to a final temperature with the metallic precursor layers being transformed into semiconducting layers, removing the chalcogen vapour that has not been consumed in the reaction, cooling the substrates (6) and removing the latter from the furnace chamber (1). It is advantageous to heat the substrates (6) in a protective gas atmosphere to a temperature at which as far as possible no condensation of chalcogens can take place.
摘要翻译：本发明涉及一种用于在平坦基板上将金属前体层热转化成具有回收硫族元素的半导体层的方法，以及用于实施该方法的装置。本发明的目的是提供一种用于金属前体层的热转化的快速且容易执行的方法，以及适于以尽可能少的硫化氢原子消耗的方式进行该方法的装置。这是通过形成用于以不透气的方式关闭炉室（1）的入口侧和出口侧气体锁（4.1,4.2,4.3,4.4），引入一个或多个由至少一个金属前体层制备的基底（6）在炉室（1）中，在接近大气压的压力下在基板（6）上方引入硫属元素蒸汽/载气混合物（10），所述混合物在基板（6）的宽度上尽可能均匀地分布，，将金属前体层转变为半导体层，将硫霉素蒸汽/载气气氛（10）中的基板（6）加热至最终温度，除去反应中未被消耗的硫属蒸汽，冷却基板（6）并将其从炉室（1）中取出。将保护气体气氛中的基板（6）加热到尽可能不发生硫属元素的冷凝的温度是有利的。

3. 发明申请

WO2010100560A1 PROCESS AND DEVICE FOR THE THERMAL CONVERSION OF METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS WITH CHALCOGEN RECOVERY 审中-公开
标题翻译：金属前驱体层转换成半导体层的过程和器件与CHALCOGEN RECOVERY
公开(公告)号：WO2010100560A1
公开(公告)日：2010-09-10
申请号：PCT/IB2010/000462
申请日：2010-03-05
申请人： CENTROTHERM PHOTOVOLTAICS AG , HARTUNG, Robert, Michael , KÖTSCHAU, Immo , SCHMID, Dieter
发明人： HARTUNG, Robert, Michael , KÖTSCHAU, Immo , SCHMID, Dieter
IPC分类号： H01L21/36 , H01L21/02
CPC分类号： H01L21/02568 , C23C14/5866 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention concerns a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens. This is achieved by heating substrates in a furnace at approximately atmospheric pressure to a final temperature in the range 400°C to 6000C and transforming them into semiconducting layers in an atmosphere formed from a mixture of at least one carrier gas and chalcogen vapour, wherein chalcogen vapour not consumed in the reaction is made available to the process again via exhaust gas recirculation.
摘要翻译：本发明涉及一种在平坦基板上将金属前体层热转化成具有硫属元素回收的半导体层的方法，以及用于实施该方法的装置。本发明的目的是提供一种用于将平坦基底上的金属前体层热转化成半导体层的快速且容易执行的方法，以及适于以尽可能少的硫原子消耗初次消耗的方式进行该方法的装置。这通过将炉中的基板在大气压下加热到400℃至600℃的最终温度并将其转化成由至少一种载气和硫族元素蒸汽的混合物形成的气氛中的半导体层来实现，其中硫族元素在反应中不消耗的蒸气通过废气再循环再次可用于该方法。

4. 发明申请

WO2009033674A2 METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE 审中-公开
标题翻译：用于将金属前驱体层热转化为半导体层的方法和设备，以及太阳能模块
公开(公告)号：WO2009033674A2
公开(公告)日：2009-03-19
申请号：PCT/EP2008/007466
申请日：2008-09-11
申请人： CENTROTHERM PHOTOVOLTAICS AG , SCHMID, Dieter , LENZ, Reinhard , HARTUNG, Robert, Michael
发明人： SCHMID, Dieter , LENZ, Reinhard , HARTUNG, Robert, Michael
CPC分类号： C23C14/228 , C03C17/22 , C23C14/0623 , C23C14/50 , C23C14/541 , C23C14/564 , C23C14/5806
摘要： The present invention concerns a method for thermally converting metallic precursor layers on substrates into semiconducting layers, and also an apparatus for carrying out the method and for producing solar modules on substrates. The invention is based on the object of providing an accelerated and simple-to-realize fast method for thermally converting metallic layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency. This is achieved by virtue of the fact that the substrates (4) previously prepared at least with a metallic precursor layer (10) are heated in a furnace (1), which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to the end temperature between 400°C and 600°C and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.
摘要翻译：本发明涉及一种用于将衬底上的金属前体层热转换成半导体层的方法，以及用于执行该方法和用于在衬底上生产太阳能模块的设备。本发明的目的在于提供一种用于将任何所需衬底上的金属层热转换成半导体层的加速和简单实现的快速方法，以及适合于实施该方法并用于生产具有高效率。这是通过以下事实实现的，即事先准备好的至少具有金属前体层（10）的基板（4）在被分割成多个温度区域的炉子（1）中加热，大气环境压力，在各种情况下达到预定温度，直到400℃和600℃之间的最终温度，并转变成半导体层，同时保持在包含载气和蒸汽硫属元素。

5. 发明申请

WO2008043827A2 VERFAHREN ZUR PASSIVIERUNG VON SOLARZELLEN 审中-公开
标题翻译：钝化太阳能电池的方法
公开(公告)号：WO2008043827A2
公开(公告)日：2008-04-17
申请号：PCT/EP2007/060862
申请日：2007-10-12
申请人： CENTROTHERM PHOTOVOLTAICS AG , HAUSER, Alexander , WANKA, Harald , PERNAU, Thomas , HARTUNG, Robert, Michael
发明人： HAUSER, Alexander , WANKA, Harald , PERNAU, Thomas , HARTUNG, Robert, Michael
IPC分类号： H01L31/18
CPC分类号： H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： Die Erfindung bezieht sich auf die Herstellung von Solarzellen auf Siliziumbasis und betrifft insbesondere ein Verfahren zur Passivierung von kristallinen Silizium-Solarzellen, bei dem kristallines Silizium in einer geeigneten Einrichtung zunächst mit Phosphor zur Erzeugung einer Diode unter Temperatureinwirkung durch einen Dif fusionsprozess dotiert wird und anschließend eine Passivierung und Entspiegelung der Oberfläche des Siliziums durch Abscheiden von Siliziumnitrid in einem Plasmaverfahren vorgenommen wird. Mit der Erfindung soll ein Verfahren zur Passivierung von Solarzellen geschaffen werden, mit dem der Wirkungsgrad von Solar- zellen mit möglichst geringem Aufwand deutlich verbessert wird. Erreicht wird das dadurch, dass die im oberflächennahen Bereich des Silizium-Rohlings vorhandene „Dead Layer" mit hoher Phosphorkonzentration unmittelbar vor der Abscheidung des Siliziumnitrids durch Trockenätzen in einem Ätz-plasma entfernt wird.
摘要翻译：
本发明涉及制备基于硅的太阳能电池，并且更具体地涉及一种方法，用于晶体硅太阳能电池的钝化，其中在合适的装置最初承受蜡纸用磷的结晶硅，以产生下一个二极管通过Dif熔合工艺掺杂温度作用，然后通过在等离子体工艺中沉积氮化硅来执行硅表面的钝化和抗反射。本发明旨在提供一种用于太阳能电池钝化的工艺，利用该工艺太阳能电池的效率以最小的可能花费显着提高。这是通过这样的事实实现的，即在硅坯表面附近的表面中存在的“死层”具有约10μm的厚度。通过在etaz等离子体中进行干法蚀刻，在即将沉积氮化硅之前具有高的磷浓度

6. 发明申请

WO2007051457A2 ANTIREFLEXBESCHICHTUNG AUF SOLARZELLEN, SOWIE VERFAHREN ZUM HERSTELLEN EINER SOLCHEN ANTIREFLEXBESCHICHTUNG 审中-公开
标题翻译： ANTI REFLEX涂层对生产这种抗REFLEX涂层太阳能电池和方法
公开(公告)号：WO2007051457A2
公开(公告)日：2007-05-10
申请号：PCT/DE2006/001927
申请日：2006-11-02
申请人： CENTROTHERM PHOTOVOLTAICS AG , MOELLER, Rainer , HARTUNG, Robert, Michael
发明人： MOELLER, Rainer , HARTUNG, Robert, Michael
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , Y02E10/50
摘要： Die Erfindung betrifft eine Antireflexbeschichtung auf Solarzellen aus kristallinem Silizium sowie ein Verfahren zum Herstellen einer solchen Antireflexbeschichtung. Durch die Erfindung soll eine Antireflexbeschichtung auf Solarzellen aus kristallinem Silizium erschaffen werden, die eine optimale Gestaltung sowohl deren optischer als auch deren passivierender Eigenschaften ermöglicht und deren Herstellung sich einfach und ökonomisch in den Fertigungsprozess insbesondere von sehr dünnen kristallinen Silizium-Solarzellen integrieren lässt. Erreicht wird das dadurch, dass die Antireflexbeschichtung aus aufeinander folgenden Teilschichten zusammengesetzt ist, von denen eine untere, das kristalline Silizium (S) abdeckenden Teilschicht (S1) als Antireflexbeschichtung und Passivierung mit besonders hohem Wasserstoffgehalt ausgebildet ist, die von einer oberen Teilschicht (S2) mit erhöhter Barrierewirkung gegen die Ausdiffusion von Wasserstoff abgedeckt ist.
摘要翻译：本发明涉及一种晶体硅太阳能电池的抗反射涂层以及制造这种抗反射涂层的方法。本发明提供太阳能电池上的抗反射涂层是从晶体硅创建，无论是光学和钝化特性的最佳设计使得和它们的制备可以在生产过程中，特别是非常薄的晶体硅太阳能电池的容易和经济集成。实现的是，连续子层的防反射涂层由其中形成低的事实，结晶硅（S），其覆盖部分层（S1）作为防反射涂层和钝化具有特别高的氢含量，顶层的（S2）覆盖有抗氢的扩散提高的屏障效果。

7. 发明公开

EP2205773A2 METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS, AND ALSO SOLAR MODULE 有权
标题翻译：方法和一种用于在半导体层金属前驱层的热转换
公开(公告)号：EP2205773A2
公开(公告)日：2010-07-14
申请号：EP08830338.3
申请日：2008-09-11
申请人： Centrotherm Photovoltaics AG
发明人： SCHMID, Dieter , LENZ, Reinhard , HARTUNG, Robert, Michael
IPC分类号： C23C14/06 , C23C14/58 , C23C14/56
CPC分类号： C23C14/228 , C03C17/22 , C23C14/0623 , C23C14/50 , C23C14/541 , C23C14/564 , C23C14/5806
摘要： The present invention concerns a method for thermally converting metallic precursor layers on substrates into semiconducting layers, and also an apparatus for carrying out the method and for producing solar modules on substrates. The invention is based on the object of providing an accelerated and simple-to-realize fast method for thermally converting metallic layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency. This is achieved by virtue of the fact that the substrates (4) previously prepared at least with a metallic precursor layer (10) are heated in a furnace (1), which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to the end temperature between 400°C and 600°C and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.

8. 发明公开

EP1946386A2 ANTIREFLEXBESCHICHTUNG AUF SOLARZELLEN, SOWIE VERFAHREN ZUM HERSTELLEN EINER SOLCHEN ANTIREFLEXBESCHICHTUNG 审中-公开
标题翻译： ANTI REFLEX涂层对生产这种抗REFLEX涂层太阳能电池和方法
公开(公告)号：EP1946386A2
公开(公告)日：2008-07-23
申请号：EP06828501.4
申请日：2006-11-02
申请人： Centrotherm Photovoltaics AG
发明人： MOELLER, Rainer , HARTUNG, Robert, Michael
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , Y02E10/50
摘要： The invention relates to an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim of the invention is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. Said aim is achieved by the fact that the antireflective coating is composed of successive partial layers, i.e. a lower partial layer (S1) which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer (S2) having an increased barrier effect against hydrogen diffusion.

9. 发明授权

EP2205773B1 METHOD AND APPARATUS FOR THERMALLY CONVERTING METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS 有权
标题翻译：方法和一种用于在半导体层金属前驱层的热转换
公开(公告)号：EP2205773B1
公开(公告)日：2014-11-12
申请号：EP08830338.3
申请日：2008-09-11
申请人： Centrotherm Photovoltaics AG
发明人： SCHMID, Dieter , LENZ, Reinhard , HARTUNG, Robert, Michael
IPC分类号： C23C14/06 , C23C14/58 , C23C14/56
CPC分类号： C23C14/228 , C03C17/22 , C23C14/0623 , C23C14/50 , C23C14/541 , C23C14/564 , C23C14/5806

10. 发明申请

WO2010086072A1 ASSEMBLY AND PROCESS FOR A GAS TIGHT SEALING OF OLED-COMPONENTS 审中-公开
标题翻译：用于气体密封OLED组件的组装和工艺
公开(公告)号：WO2010086072A1
公开(公告)日：2010-08-05
申请号：PCT/EP2009/067678
申请日：2009-12-21
申请人： CENTROTHERM THERMAL SOLUTIONS GMBH + CO. KG , KEIM, Uwe , HARTUNG, Robert, Michael
发明人： KEIM, Uwe , HARTUNG, Robert, Michael
IPC分类号： B23K26/00 , B23K26/02 , B23K26/12 , H01L51/52
CPC分类号： B23K26/127 , B23K26/037 , B23K26/12 , B23K26/206 , B23K2201/40 , H01L51/5246
摘要： The invention concerns an assembly for gas tight sealing of OLED components comprising an OLED layer structure on a substrate and a covering glass plate as well as a solder at the rim area between. It is an object of the invention to realize a device for a fast and effective vacuum tight sealing of OLED devices with a low thermal load of the OLED devices. The invention is characterized by the fact that a chamber (1) which can be evacuated having an upper assembling opening (2) provided with a window (3) and with a substrate mount (5), which is movable from below against the window (3) to grout the OLED devices (6) which are preassembled positioned onto the mount (5), whereby a laser beam (14) of a laser beam welding device can be directed through the window (3) at the level between the substrate (7) and a covering glass plate (8).
摘要翻译：本发明涉及一种用于气密密封OLED组件的组件，其包括在衬底上的OLED层结构和覆盖玻璃板以及在其之间的边缘区域处的焊料。本发明的目的是实现一种用于OLED装置的低热负荷的OLED器件的快速有效的真空密封的装置。本发明的特征在于，可以抽真空的腔室（1）具有设置有窗口（3）的上组装开口（2）和具有衬底安装件（5）的事实，所述衬套安装件可从下方抵靠窗户 3）将预组装的OLED器件（6）灌浆到安装件（5）上，由此激光束焊接装置的激光束（14）能够被引导通过窗口（3） 7）和覆盖玻璃板（8）。

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