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    • 1. 发明申请
    • OPTICAL SYSTEM FOR EUV PROJECTION MICROLITHOGRAPHY
    • 用于EUV投影微光学的光学系统
    • WO2012028303A1
    • 2012-03-08
    • PCT/EP2011/004373
    • 2011-08-31
    • CARL ZEISS SMT GMBHMANN, Hans-JürgenLÖRING, UlrichLAYH, MichaelRUOFF, Johannes
    • MANN, Hans-JürgenLÖRING, UlrichLAYH, MichaelRUOFF, Johannes
    • G03F7/20
    • G03F7/7025G03F7/70125G03F7/70216
    • Optical system for EUV projection microlithography comprising lighting optics (4) for illuminating a lighting field (5) in a reticle plane (6) comprising at least one facet mirror (18) with a plurality of facet elements (24) for producing different light channels, wherein by means of the light channels a specific lighting setting (25) of the lighting field (5) can be produced, and a projection optics (9) for projecting the lighting field (5) along a projection direction (27) into an image field (10) in an image plane (11) with at least one first obscuration (30; 42) wherein the first obscuration is arranged in a first position relative to the projection direction (27), and wherein the first obscuration (30; 42) and the lighting setting (25) are adjusted to one another such that an intensity of at least one predetermined order of diffraction of an image of at least of one light channel of the lighting setting (25) in the region of the first position has a maximum intensity I max and a limit intensity I lim max , and the area in which the intensity of the order of movement is greater than the limit intensity I lim , and the area of the first obscuration (30; 42) are non-overlapping.
    • 用于EUV投影微光刻的光学系统,包括用于照亮标线板平面(6)中的照明场(5)的照明光学器件(4),其包括具有多个小面元件(24)的至少一个小面反射镜(18),用于产生不同的光通道 ,其中通过所述光通道可以产生所述照明场(5)的特定照明设置(25),以及用于将所述照明场(5)沿着投影方向(27)投影到投影光学元件(9)中的投影光学元件(9) 在具有至少一个第一遮蔽(30; 42)的图像平面(11)中的图像场(10),其中所述第一遮挡被布置在相对于所述投影方向(27)的第一位置,并且其中所述第一遮蔽(30; 42)和照明设置(25)彼此调节,使得在第一位置的区域中至少一个照明设置(25)的一个光通道的图像的至少一个预定的衍射次数的强度 具有最大强度Imax和li 最大强度Ilim max,以及运动顺序强度大于极限强度Ilim的面积,以及第一遮蔽面积(30; 42)是不重叠的。
    • 3. 发明申请
    • METHOD OF OPERATING A PROJECTION EXPOSURE TOOL
    • 投影曝光工具的操作方法
    • WO2012097833A1
    • 2012-07-26
    • PCT/EP2011/000225
    • 2011-01-20
    • CARL ZEISS SMT GMBHCONRADI, OlafTOTZECK, MichaelLÖRING, UlrichJÜRGENS, DirkMÜLLER, RalfWALD, Christian
    • CONRADI, OlafTOTZECK, MichaelLÖRING, UlrichJÜRGENS, DirkMÜLLER, RalfWALD, Christian
    • G03F7/20
    • G03F7/70891G03F7/70141G03F7/70483G03F7/70516G03F7/708
    • A method of operating a projection exposure tool (10) for microlithography is provided. The projection exposure tool (10) has a projection objective (26) for imaging object structures on a mask (20) into an image plane (28) using electromagnetic radiation (13, 13a, 13b), during which imaging the electromagnetic radiation (13b) causes a change in optical properties of the projection objective (26). The method comprises the steps of: providing the layout of the object structures on the mask (20) to be imaged and classifying the object structures according to their type of structure, calculating the change in the optical properties of the projection objective (26) effected during the imaging process on the basis of the classification of the object structures, and using the projection exposure tool (10) for imaging the object structures into the image plane (28), wherein the imaging behavior of the projection exposure tool (10) is adjusted on the basis of the calculated change of the optical properties in order to at least partly compensate for the change of the optical properties of the projection objective (26) caused by the electromagnetic radiation (13, 13a, 13b) during the imaging process.
    • 提供了一种操作用于微光刻的投影曝光工具(10)的方法。 投影曝光工具(10)具有用于使用电磁辐射(13,13a,13b)将掩模(20)上的物体结构成像到图像平面(28)中的投影物镜(26),在此期间对电磁辐射(13b)进行成像 )导致投影物镜(26)的光学特性的变化。 该方法包括以下步骤:在要成像的掩模(20)上提供对象结构的布局,并根据其结构类型对对象结构进行分类,计算投影物镜(26)的光学特性的变化 在所述成像处理期间,基于所述物体结构的分类,以及使用所述投影曝光工具(10)将所述物体结构成像到所述图像平面(28)中,其中所述投影曝光工具(10)的成像特性为 基于所计算的光学特性的变化进行调整,以至少部分地补偿由成像过程中的电磁辐射(13,13a,13b)引起的投影物镜(26)的光学特性的变化。
    • 5. 发明申请
    • MESSVORRICHTUNG ZUR INTERFEROMETRISCHEN BESTIMMUNG EINER FORM EINER OPTISCHEN OBERFLÄCHE EINES TESTOBJEKTS
    • WO2020244937A1
    • 2020-12-10
    • PCT/EP2020/064294
    • 2020-05-22
    • CARL ZEISS SMT GMBH
    • LÖRING, Ulrich
    • G01B11/24G01B9/02G01M11/00
    • Eine Messvorrichtung (10) zur interferometrischen Bestimmung einer Form einer optischen Oberfläche (12) eines Testobjekts (14) umfasst ein diffraktives optisches Modul (24) zur Erzeugung einer auf die optische Oberfläche gerichteten Prüfwelle (26), welche zumindest eine teilweise an eine Sollform (12-2) der optischen Oberfläche angepasste Wellenfront aufweist, sowie einer Referenzwelle (28), ein im Strahlengang der Referenzwelle angeordnetes reflektives Referenzelement, welches zur Anordnung an unterschiedlichen Referenzpositionen in Richtung des Strahlengangs der Referenzwelle verschiebbar gelagert ist, eine in Richtung des Strahlengangs der Prüfwelle (26) verschiebbar gelagerte Halteeinrichtung (15) zur Anordnung des Testobjekts an unterschiedlichen Testpositionen (17), eine Erfassungseinrichtung (32) zum Erfassen von an den unterschiedlichen Testpositionen des Testobjekts erzeugten Interferogrammen, welche jeweils durch eine Überlagerung der Prüfwelle nach Wechselwirkung mit der optischen Oberfläche und der Referenzwelle nach Reflexion an dem Referenzelement gebildet werden. Dabei sind mindestens einer der Testpositionen jeweils mehrere Interferogramme zugeordnet, bei deren Erzeugung das Referenzelement an unterschiedlichen Referenzpositionen angeordnet ist. Weiterhin umfasst die Messvorrichtung eine Auswerteeinrichtung (38), welche dazu konfiguriert ist, eine Abweichung einer tatsächlichen Form (12-1) der optischen Oberfläche (12) von der Sollform (12-2) durch jeweilige Ermittlung eines Abweichungsergebnisses für jede der Testpositionen mittels Auswertung der an den unterschiedlichen Testpositionen erzeugten Interferog ramme und Mittelung der Abweichungsergebnisse zu bestimmen, wobei für die mindestens eine Testposition mit mehreren zugeordneten Interferogrammen die Ermittlung des Abweichungsergebnisses anhand der zugeordneten Interferogramme erfolgt.
    • 7. 发明申请
    • SURFACE CORRECTION OF MIRRORS WITH DECOUPLING COATING
    • 倒装涂层反光镜的表面校正
    • WO2014206736A1
    • 2014-12-31
    • PCT/EP2014/062132
    • 2014-06-11
    • CARL ZEISS SMT GMBH
    • DIER, OliverHACKL, TobiasSTICKEL, Franz-JosefLÖRING, UlrichAßMUS, TilmannMÜLLER, JürgenKAMENOV, VladimirRENNON, Siegfried
    • G02B5/08G21K1/06
    • G03F7/702G02B5/0816G02B5/0891G02B27/0025G03F7/70308G03F7/70316G03F7/706G03F7/70975G21K1/062H05G2/005
    • The invention relates to a mirror (1) for EUV lithography, comprising a substrate (2) and a reflective coating (3, 4), wherein the reflective coating comprises a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group (3) and second group (4) of layers (3a, 3b; 4a, 4b) are designed in each case for reflecting radiation having a used wavelength in the range of between 5 nm and 30 nm, wherein the first group (3) of layers (3a, 3b) is arranged between the substrate (2) and the second group (4) of layers (4a, 4b), and wherein a decoupling coating (6) is arranged between the first group (3) and second group (4) of layers (3a, 3b, 4a, 4b), said decoupling coating being designed for optically decoupling the second group (4) of layers (4a, 4b) from the first group (3) of layers (3a, 3b) by preventing the radiation having the used wavelength from reaching the first group (3) of layers (3a, 3b). The reflective coating (3, 4) preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror (1). The invention also relates to a projection optical unit and an optical system for EUV lithography comprising at least one such mirror, a method for correcting the surface form of such a mirror, and methods for correcting the imaging properties of such a projection optical unit.
    • 本发明涉及一种用于EUV光刻的反射镜(1),其包括基底(2)和反射涂层(3,4),其中所述反射涂层包括第一组(3)层(3a,3b) 组(4)层(4a,4b),其中在每种情况下设计层(3a,3b; 4a,4b)的第一组(3)和第二组(4),用于将具有使用波长的辐射反射在 范围在5nm和30nm之间,其中层(3a,3b)的第一组(3)布置在基板(2)和层(4a,4b)的第二组(4)之间,并且其中去耦 涂层(6)布置在层(3a,3b,4a,4b)的第一组(3)和第二组(4)之间,所述去耦涂层被设计用于光学地将第二组(4)的层(4a, 4b)从层(3a,3b)的第一组(3)通过防止具有使用波长的辐射到达层(3a,3b)的第一组(3)。 反射涂层(3,4)优选具有用于校正反射镜(1)的表面形状的层厚度变化的校正层(5)。 本发明还涉及用于EUV光刻的投影光学单元和光学系统,其包括至少一个这种反射镜,用于校正这种反射镜的表面形状的方法以及用于校正这种投影光学单元的成像特性的方法。
    • 8. 发明申请
    • OPTICAL ARRANGEMENT FOR EUV LITHOGRAPHY
    • 用于EUV光刻的光学装置
    • WO2013110518A1
    • 2013-08-01
    • PCT/EP2013/050553
    • 2013-01-14
    • CARL ZEISS SMT GMBH
    • BAER, NormanGRUNER, ToralfLÖRING, Ulrich
    • G03F7/20
    • G03F7/70891G02B17/0663G03F7/70316G03F7/706G03F7/70958
    • The invention relates to an optical arrangement, in particular a projection lens for microlithography, comprising: at least one optical element (21) comprising an optical surface (31a) and a substrate (32), wherein the substrate (32) is formed from a material whose temperature-dependent coefficient of thermal expansion at a zero crossing temperature ΔT zc = T zc - T ref related to a reference temperature T ref is equal to zero, wherein the optical surface (31a) has, during the operation of the optical arrangement, a location-dependent temperature distribution ΔΤ(χ, y) that is dependent on a local irradiance (5a), is related to the reference temperature T ref and has an average temperature ΔΤ aν , a minimum temperature ΔT min and a maximum temperature ΔT max, wherein the average temperature ΔΤ aν is less than the average value 1/2 (ΔT max + ΔT min ) formed from the minimum temperature ΔT min and the maximum temperature ΔT max, and wherein the zero crossing temperature ΔT zc is greater than the average temperature ΔΤ aν. The invention likewise relates to an EUV lithography apparatus comprising such an optical arrangement in the form of a projection lens, and to an associated method for configuring the optical arrangement.
    • 本发明涉及一种光学装置,特别是用于微光刻的投影透镜,包括:至少一个包括光学表面(31a)和基底(32)的光学元件(21),其中基底(32)由 与参考温度Tref相关的过零点温度下的温度依赖性热膨胀系数ΔTzc= Tzc-Tref等于零,其中光学表面(31a)在光学装置的操作期间具有位置 - 依赖于温度分布的DeltaTau(chi,y)取决于局部辐照度(5a),与参考温度Tref相关,并且具有平均温度DeltaTauanu,最低温度DeltaTmin和最大温度DeltaTmax,其中平均温度DeltaTauanu为 小于由最小温度DeltaTmin和最大温度DeltaTmax形成的平均值1/2(DeltaTmax +ΔTmin),并且其中零交叉 唱歌温度DeltaTzc大于平均温度DeltaTauanu。 本发明同样涉及包括投影透镜形式的这种光学装置的EUV光刻设备以及用于配置光学布置的相关方法。