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    • 2. 发明申请
    • OPTICAL SYSTEM
    • 光学系统
    • WO2009065819A2
    • 2009-05-28
    • PCT/EP2008/065733
    • 2008-11-18
    • CARL ZEISS SMT AGMÜLLER, RalfGRUNER, Toralf
    • MÜLLER, RalfGRUNER, Toralf
    • G02B5/30G02B1/08G03F7/20
    • G02B5/3083G02B1/08G03F7/70141G03F7/70191G03F7/70258G03F7/70308G03F7/70566G03F7/70966
    • The invention concerns, according to one aspect, an optical system having an optical axis OA (OA) and comprising at least one polarization manipulator (100, 200) having a first subelement (110, 210) which has a non-planar, optically effective surface and for light passing therethrough causes a change in the polarization state, wherein a maximum effective retardation introduced by the first subelement along the optical axis (OA) is less than a quarter of the working wavelength of the optical system, and a second subelement (120, 220), wherein said first subelement and said second subelement have mutually facing surfaces (110a, 120a; 210a, 220a) which are mutually complementary, and a position manipulator (150, 250) for manipulation of the relative position of said first subelement (110, 210) and said second subelement (120, 220).
    • 根据一个方面,本发明涉及一种具有光轴OA(OA)并且包括至少一个具有第一子元件(110,210)的偏振操纵器(100,200)的光学系统,该第一子元件具有非平面的,光学有效的 表面和穿过其的光引起偏振状态的变化,其中由第一子元件沿着光轴(OA)引入的最大有效延迟小于光学系统的工作波长的四分之一,以及第二子元件 120,220),其中所述第一子元件和所述第二子元件具有相互互补的相互面对的表面(110a,120a; 210a,220a)和用于操纵所述第一子元件的相对位置的位置操纵器(150,250) (110,210)和所述第二子元件(120,220)。
    • 3. 发明申请
    • PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY
    • 投影曝光系统
    • WO2008152087A1
    • 2008-12-18
    • PCT/EP2008/057369
    • 2008-06-12
    • CARL ZEISS SMT AGHETZLER, JochenGRUNER, Toralf
    • HETZLER, JochenGRUNER, Toralf
    • G03F7/20
    • G03F7/70825G03F7/70258G03F7/70308
    • A projection exposure system for microlithography comprises at least one optical system, for example a lithography lens comprising at least one bi-asphere (1) with two aspheres (2,3). In accordance with the invention, the projection exposure system has a manipulator which compensates tilting of the aspherical axes A2, A3 of the two aspheres (2,3) by tilting bi-asphere (1) about two mutually perpendicular axes RX and RY such that the projection properties of the optical system are optimized. In addition, a centering manipulator can be provided that executes translations TX and TY for the purpose of aligning the axes A2 and A3 with respect to the optical axis OA. With the aid of the inventive system, it is possible, with the bi-asphere (1) already mounted at the lens, using the projection parameters from the system itself, to perform an alignment of the lens (1), in particular tilting, for the purpose of optimizing the projection parameters of the lithography lens.
    • 用于微光刻的投影曝光系统包括至少一个光学系统,例如包括至少一个具有两个非球面(2,3)的双 - 非球面(1)的光刻透镜。 根据本发明,投影曝光系统具有通过围绕两个相互垂直的轴线RX和RY倾斜双非球面(1)来补偿两个非球面(2,3)的非球面轴线A2,A3的倾斜的操纵器,使得 优化了光学系统的投影特性。 此外,可以提供定心操纵器,其执行平移TX和TY以便相对于光轴OA对准轴A2和A3。 借助于本发明的系统,借助于系统本身的投影参数,双透镜(1)已经安装在透镜上,可以执行透镜(1)的对准,特别是倾斜, 为了优化光刻透镜的投影参数。
    • 6. 发明申请
    • OPTICAL SYSTEM, IN PARTICULAR ILLUMINATION DEVICE OR PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 光学系统,特别是照明设备或投影微波投影曝光装置的目标
    • WO2008119794A1
    • 2008-10-09
    • PCT/EP2008/053847
    • 2008-03-31
    • CARL ZEISS SMT AGTOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • TOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • G03F7/20
    • G03F7/70566
    • The invention relates to an optical system, in particular an illumination device or a projection objective of a microlithographic projection exposure apparatus, comprising a polarization compensator (100, 200, 300, 400, 800, 900), which has at least one polarization-modifying partial element (110-140, 210-240, 310-340, 410-440, 810-840, 910-940), and a manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b), by means of which the position of the at least one partial element can be altered, wherein, in the optical system, at least one operating mode (501-504) can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis (OA) and which can be illuminated with light from said light source, does not exceed 20% of the maximum intensity in said plane, and wherein the manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b) is arranged in said region.
    • 本发明涉及光学系统,特别是微光刻投影曝光装置的照明装置或投影物镜,该光学装置或投影物镜包括极化补偿器(100,200,300,400,800,900),其具有至少一个偏振修正 部分元件(110-140,210-240,310-340,410-440,810-840,910-940)和操纵器(150,250,722,851-854,951a-954a,951b-954b) ,借助于此可以改变至少一个部分元件的位置,其中在光学系统中,可以设置至少一个操作模式(501-504),其中强度在属于 垂直于光轴(OA)的并且可以用来自所述光源的光照射的平面不超过所述平面中最大强度的20%,并且其中所述操纵器(150,250,722,851-854,951a -954a,951b-954b)布置在所述区域中。
    • 8. 发明申请
    • METHOD AND SYSTEM FOR CORRECTING IMAGE CHANGES
    • 用于校正图像变化的方法和系统
    • WO2008023071A1
    • 2008-02-28
    • PCT/EP2007/058852
    • 2007-08-25
    • CARL ZEISS SMT AGCONRADI, OlafGRUNER, Toralf
    • CONRADI, OlafGRUNER, Toralf
    • G03F7/20
    • G03F7/70891G03F7/70258
    • The present invention relates to a method for compensating imaging errors, generated by intensity distributions in optical systems, in particular, in projection lens arrays (3) of microlithography systems, comprising the steps in the following sequence: - determining the location- and time dependent intensity distributions in at least one optical element of the optical system; - determining the location- and/or time based absorbed energy in at least the optical element, for which the intensity distribution has been determined; - determining the deformations and/or changes of the optical properties of the optical element caused by the induced energy; and - selecting one or several compensation measures, depending on the results of the preceding steps. And the invention relates to an optical system for imaging an object, in particular to a projection lens for microlithography, preferably for applying the described method with at least one, preferably several, optical elements (4, 5), wherein at least one image detector (6, 7), which can be located in the optical path, is provided for intensity measurement, which directly measures the location- and/or time resolved intensity distribution in the optical path of the optical system.
    • 本发明涉及一种用于补偿由光学系统中的强度分布产生的成像误差的方法,特别是在微光刻系统的投影透镜阵列(3)中,包括以下步骤的步骤: - 确定位置和时间相关 在光学系统的至少一个光学元件中的强度分布; - 确定至少已经确定了强度分布的至少光学元件中基于位置和/或时间的吸收能量; - 确定由所述感应能量引起的所述光学元件的光学特性的变形和/或变化; 以及 - 根据上述步骤的结果,选择一个或多个补偿措施。 本发明涉及一种用于对物体进行成像的光学系统,特别涉及一种用于微光刻的投影透镜,优选地用至少一个,优选几个光学元件(4,5)应用所描述的方法,其中至少一个图像检测器 (6,7)可以位于光路中,用于强度测量,其直接测量光学系统的光路中的位置和/或时间分辨强度分布。