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1. 发明申请

US20080283817A1 PHASE-CHANGE NONVOLATILE MEMORY DEVICE USING Sb-Zn ALLOY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：使用Sb-Zn合金的相变非易失性存储器件及其制造方法
公开(公告)号：US20080283817A1
公开(公告)日：2008-11-20
申请号：US12122152
申请日：2008-05-16
申请人： Byoung Gon YU , Sung Min YOON , Se Young CHOI , Tae Jin PARK
发明人： Byoung Gon YU , Sung Min YOON , Se Young CHOI , Tae Jin PARK
IPC分类号： H01L47/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/14 , H01L45/1625 , H01L45/1666
摘要： Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
摘要翻译：提供了一种相变非易失性存储器件及其制造方法。该装置包括：基板; 以及设置在所述基板上并且包括相变材料层的堆叠结构。相变材料层由锑（Sb）和锌（Zn）的合金形成，使得相变存储器件可以稳定地高速运行并降低功耗。

2. 发明申请

US20100012915A1 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20100012915A1
公开(公告)日：2010-01-21
申请号：US12425152
申请日：2009-04-16
申请人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
发明人： Sung Min YOON , Byoung Gon YU , Soon Won JUNG , Seung Yun LEE , Young Sam PARK , Joon Suk LEE
IPC分类号： H01L47/00 , H01L21/06
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
摘要翻译：提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层，形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

3. 发明申请

US20120225500A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20120225500A1
公开(公告)日：2012-09-06
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

4. 发明申请

US20110223716A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20110223716A1
公开(公告)日：2011-09-15
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
发明人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

5. 发明申请

US20110065246A1 EMBEDDED PHASE-CHANGE MEMORY AND METHOD OF FABRICATING THE SAME 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US20110065246A1
公开(公告)日：2011-03-17
申请号：US12942255
申请日：2010-11-09
申请人： Seung-Yun LEE , Sang ouk RYU , Sung Min YOON , Young Sam PARK , Kyu-Jeong CHOI , Nam-Yeal LEE , Byoung-Gon YU
发明人： Seung-Yun LEE , Sang ouk RYU , Sung Min YOON , Young Sam PARK , Kyu-Jeong CHOI , Nam-Yeal LEE , Byoung-Gon YU
IPC分类号： H01L21/8249
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

6. 发明申请

US20100108977A1 NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US20100108977A1
公开(公告)日：2010-05-06
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00 , H01L21/768 , H01L21/31
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

7. 发明申请

US20090184307A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090184307A1
公开(公告)日：2009-07-23
申请号：US12240013
申请日：2008-09-29
申请人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
发明人： Sung Min YOON , Byoung Gon Yu , Seung Yun Lee , Young Sam Park , Kyu Jeong Choi , Nam Yeal Lee
IPC分类号： H01L21/06 , H01L45/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1625
摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
摘要翻译：提供了一种相变存储器件及其制造方法。相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态非晶态。结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

8. 发明申请

US20120001159A1 INSULATING LAYER, ORGANIC THIN FILM TRANSISTOR USING THE INSULATING LAYER, AND METHOD OF FABRICATING THE ORGANIC THIN FILM TRANSISTOR 审中-公开
标题翻译：绝缘层，使用绝缘层的有机薄膜晶体管，以及制造有机薄膜晶体管的方法
公开(公告)号：US20120001159A1
公开(公告)日：2012-01-05
申请号：US13233377
申请日：2011-09-15
申请人： Gi Heon KIM , Sung Min YOON , Kyu Ha BAEK , In Kyu YOU , Seung Youl KANG , Seong Deok AHN , Kyung Soo SUH
发明人： Gi Heon KIM , Sung Min YOON , Kyu Ha BAEK , In Kyu YOU , Seung Youl KANG , Seong Deok AHN , Kyung Soo SUH
IPC分类号： H01L51/10 , H01L29/51
CPC分类号： H01L21/02118 , C08F120/00 , C08F120/10 , C08F120/44 , H01L21/02164 , H01L21/02186 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/312 , H01L21/31691 , H01L51/0537
摘要： Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.
摘要翻译：提供一种绝缘层，其中无机材料被添加到有机聚合物中以提高绝缘性能，使用该绝缘层的有机薄膜晶体管以及制造该有机薄膜晶体管的方法。提供了包含乙烯基聚合物和无机材料的有机薄膜晶体管的绝缘层。这里，乙烯基聚合物与无机材料的重量比可以在1：0.0001〜1:0.5的范围内。因此，可以在低温下制造薄膜，并且还可以制造绝缘层，该绝缘层具有高介电常数，不影响在形成绝缘层期间的以前工艺中形成的其它层。

9. 发明申请

US20110049592A1 NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性存储单元及其制造方法
公开(公告)号：US20110049592A1
公开(公告)日：2011-03-03
申请号：US12838878
申请日：2010-07-19
申请人： Sung Min YOON , Chun Won BYUN , Shin Hyuk YANG , Sang Hee PARK , Soon Won JUNG , Seung Youl KANG , Chi Sun HWANG , Byoung Gon YUN
发明人： Sung Min YOON , Chun Won BYUN , Shin Hyuk YANG , Sang Hee PARK , Soon Won JUNG , Seung Youl KANG , Chi Sun HWANG , Byoung Gon YUN
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/6684 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L27/1159 , H01L29/78391
摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
摘要翻译：提供一种非易失性存储单元及其制造方法。非易失性存储单元包括存储晶体管和驱动晶体管。存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。存储晶体管和驱动晶体管设置在同一衬底上。非易失性存储单元在可见光区域是透明的。

10. 发明申请

US20120007158A1 NON-VOLATILE MEMORY TRANSISTOR HAVING DOUBLE GATE STRUCTURE 审中-公开
标题翻译：具有双门结构的非易失性存储器晶体管
公开(公告)号：US20120007158A1
公开(公告)日：2012-01-12
申请号：US13173625
申请日：2011-06-30
申请人： Sung Min YOON , Shin Hyuk Yang , Chun Won Byun , Min Ki Ryu , Soon Won Jung
发明人： Sung Min YOON , Shin Hyuk Yang , Chun Won Byun , Min Ki Ryu , Soon Won Jung
IPC分类号： H01L27/088
CPC分类号： H01L29/78391 , H01L29/22 , H01L29/40111 , H01L29/516
摘要： Provided is a non-volatile memory transistor having a double gate structure, including a first gate electrode formed on a substrate and to which an operating voltage is applied, a first gate insulating layer formed on the first gate electrode, source and drain electrodes formed on the first gate insulating layer at predetermined intervals, a channel layer formed on the first gate insulating layer between the source and drain electrodes, a second gate insulating layer formed on the channel layer, and a second gate electrode formed on the second gate insulating layer and connected to the first gate electrode such that the operating voltage is applied thereto. Accordingly, a turn-on voltage of the memory transistor can be easily controlled.
摘要翻译：本发明提供一种具有双栅极结构的非易失性存储晶体管，包括形成于基板上的第一栅电极，施加工作电压的第一栅极绝缘层，形成在第一栅电极上的源电极和漏电极，所述第一栅极绝缘层以预定间隔形成，沟道层，形成在所述源极和漏极之间的所述第一栅极绝缘层上，形成在所述沟道层上的第二栅极绝缘层，以及形成在所述第二栅极绝缘层上的第二栅极电极，连接到第一栅电极，使得施加工作电压。因此，可以容易地控制存储晶体管的接通电压。

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