专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08470719B2 Method for fabricating phase change memory device using solid state reaction 有权
标题翻译：使用固态反应制造相变存储器件的方法
公开(公告)号：US08470719B2
公开(公告)日：2013-06-25
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L21/461 , H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

2. 发明授权

US08362467B2 Composition for an organic dielectric 有权
标题翻译：有机电介质的组成
公开(公告)号：US08362467B2
公开(公告)日：2013-01-29
申请号：US12769316
申请日：2010-04-28
申请人： Yong-Young Noh , In-Kyu You , Jae Bon Koo , Soon Won Jung
发明人： Yong-Young Noh , In-Kyu You , Jae Bon Koo , Soon Won Jung
IPC分类号： H01L35/24
CPC分类号： H01L51/052 , C08F220/14 , C08F222/40 , C08F2220/1891 , C08K5/0025 , C08K5/3415 , C08L33/10 , H01L51/0541 , H01L51/0545 , C08F220/30
摘要： A composition for an organic dielectric, includes a compound represented by Formula 1 below; and a cross-linking agent, wherein, in Formula 1, R1 is any one of hydrogen, hydroxyl group, ester group, amide group, or alkyl group or alkoxy group of a carbon number of 1 to 12, R2 is selected from electrolytic functional groups, each of a and b is a positive integer, and the ratio of b to a (b/a) is larger than 0 and smaller than 99,
摘要翻译：一种有机电介质组合物，包括由下式1表示的化合物; 和交联剂，其中，在式1中，R 1为碳数为1至12的氢，羟基，酯基，酰胺基或烷基或烷氧基中的任一个，R 2选自电解功能 a，b分别为正整数，b与a（b / a）的比例大于0且小于99，

3. 发明申请

US20120225500A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20120225500A1
公开(公告)日：2012-09-06
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

4. 发明授权

US08198625B2 Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
标题翻译：透明非易失性存储薄膜晶体管及其制造方法
公开(公告)号：US08198625B2
公开(公告)日：2012-06-12
申请号：US12555986
申请日：2009-09-09
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L35/24
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

5. 发明申请

US20110272661A1 RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电阻记忆体装置及其制造方法
公开(公告)号：US20110272661A1
公开(公告)日：2011-11-10
申请号：US12915495
申请日：2010-10-29
申请人： Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
发明人： Yong Suk YANG , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/0014 , G11C13/0016 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/1608
摘要： Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括通过膨胀工艺和退火工艺形成的电子通道层。因此，导电纳米粒子均匀分散在电子通道层中，以提高电阻式存储器件的可靠性。根据该方法，通过印刷工艺，溶胀工艺和退火工艺形成电子通道层。因此，制造时间缩短。

6. 发明申请

US20110223716A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20110223716A1
公开(公告)日：2011-09-15
申请号：US13110579
申请日：2011-05-18
申请人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
发明人： Seung Yun LEE , Young Sam PARK , Sung Min YOON , Soon Won JUNG , Byoung Gon YU
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

7. 发明授权

US08278138B2 Resistive memory device and method of fabricating the same 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US08278138B2
公开(公告)日：2012-10-02
申请号：US12915495
申请日：2010-10-29
申请人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
发明人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Soon Won Jung , Kang Dae Kim , Yong-Young Noh
IPC分类号： H01L51/40
CPC分类号： G11C13/0007 , G11C13/0009 , G11C13/0011 , G11C13/0014 , G11C13/0016 , H01L45/04 , H01L45/1233 , H01L45/14 , H01L45/1608
摘要： Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括通过膨胀工艺和退火工艺形成的电子通道层。因此，导电纳米粒子均匀分散在电子通道层中，以提高电阻式存储器件的可靠性。根据该方法，通过印刷工艺，溶胀工艺和退火工艺形成电子通道层。因此，制造时间缩短。

8. 发明申请

US20100108977A1 NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
标题翻译：使用相变存储器件的非易失性可编程开关器件及其制造方法
公开(公告)号：US20100108977A1
公开(公告)日：2010-05-06
申请号：US12428628
申请日：2009-04-23
申请人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
发明人： Sung Min YOON , Byoung Gon Yu , Soon Won Jung , Seung Yun Lee , Young Sam Park , Joon Suk Lee
IPC分类号： H01L45/00 , H01L21/768 , H01L21/31
CPC分类号： H01L45/1226 , H01L45/06 , H01L45/1206 , H01L45/144 , H01L45/1625 , H01L45/1675
摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.
摘要翻译：提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属电极层和设置成填充通孔的第二金属电极层。开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

9. 发明申请

US20090146128A1 ELECTRICAL DEVICE USING PHASE CHANGE MATERIAL, PHASE CHANGE MEMORY DEVICE USING SOLID STATE REACTION AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：使用相变材料的电气设备，使用固态反应的相变存储器件及其制造方法
公开(公告)号：US20090146128A1
公开(公告)日：2009-06-11
申请号：US12326776
申请日：2008-12-02
申请人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
发明人： Seung Yun Lee , Young Sam Park , Sung Min Yoon , Soon Won Jung , Byoung Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1666
摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
摘要翻译：提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层形成第二反应物层的材料。相变存储器件消耗低功率并以高速运行。

10. 发明授权

US06989547B2 Method and apparatus for discriminating latent fingerprint in optical fingerprint input apparatus 有权
标题翻译：用于鉴别光学指纹输入设备中的潜在指纹的方法和装置
公开(公告)号：US06989547B2
公开(公告)日：2006-01-24
申请号：US11067792
申请日：2005-02-28
申请人： Hwi-Seok Lee , Soon-Won Jung , Jae-Hyun Jun
发明人： Hwi-Seok Lee , Soon-Won Jung , Jae-Hyun Jun
IPC分类号： G06K11/00 , G06K5/00
CPC分类号： G06K9/00013
摘要： A method and an apparatus for distinguishing a latent fingerprint is provided to prevent a fingerprint recognition apparatus from mis-recognizing a latent fingerprint as a fingerprint of a biomass due to a fingerprint residual on an imaging surface of an optical fingerprint input apparatus. According to the present invention, there is provided a backlight control device for controlling switching on and off of the backlight; an image acquisition device for acquiring a fingerprint image without illuminating the backlight onto the imaging surface; a fingerprint detection device for detecting the existence of a fingerprint from the image acquired by the image acquisition device; and a device for determining that the fingerprint, if detected by the fingerprint detection device, is a latent fingerprint detected due to an external light.
摘要翻译：提供了用于区分潜在指纹的方法和装置，以防止指纹识别装置由于光学指纹输入装置的成像表面上的指纹残留而误认为潜在指纹作为生物质的指纹。根据本发明，提供了一种用于控制背光的接通和断开的背光控制装置; 用于获取指纹图像而不将所述背光照射到所述成像表面上的图像获取装置; 指纹检测装置，用于从由图像获取装置获取的图像中检测指纹的存在; 以及用于确定如果由指纹检测装置检测到的指纹是由于外部光检测到的潜在指纹的装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式