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1. 发明申请

US20120225500A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20120225500A1
公开(公告)日：2012-09-06
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min YOON , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

2. 发明授权

US08198625B2 Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
标题翻译：透明非易失性存储薄膜晶体管及其制造方法
公开(公告)号：US08198625B2
公开(公告)日：2012-06-12
申请号：US12555986
申请日：2009-09-09
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L35/24
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

3. 发明授权

US08476106B2 Transparent nonvolatile memory thin film transistor and method of manufacturing the same 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US08476106B2
公开(公告)日：2013-07-02
申请号：US13469558
申请日：2012-05-11
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Won Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L51/40
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

4. 发明申请

US20100243994A1 TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：透明非易失性存储器薄膜晶体管及其制造方法
公开(公告)号：US20100243994A1
公开(公告)日：2010-09-30
申请号：US12555986
申请日：2009-09-09
申请人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
发明人： Sung Min Yoon , Shin Hyuk Yang , Soon Woon Jung , Seung Youl Kang , Doo Hee Cho , Chun Won Byun , Chi Sun Hwang , Byoung Gon Yu , Kyoung Ik Cho
IPC分类号： H01L27/115 , H01L51/10 , H01L29/12 , H01L21/8246
CPC分类号： H01L21/28291 , H01L29/78391 , H01L29/7869
摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
摘要翻译：提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。存储TFT包括设置在透明基板上的源极和漏极。透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。有机铁电薄层设置在透明半导体薄层上。栅电极与透明半导体薄层对准地设置在有机铁电薄层上。因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件温度过程。

5. 发明授权

US08558295B2 Nonvolatile memory cell and method of manufacturing the same 有权
标题翻译：非易失性存储单元及其制造方法
公开(公告)号：US08558295B2
公开(公告)日：2013-10-15
申请号：US12838878
申请日：2010-07-19
申请人： Sung Min Yoon , Chun Won Byun , Shin Hyuk Yang , Sang Hee Park , Soon Won Jung , Seung Youl Kang , Chi Sun Hwang , Byoung Gon Yu
发明人： Sung Min Yoon , Chun Won Byun , Shin Hyuk Yang , Sang Hee Park , Soon Won Jung , Seung Youl Kang , Chi Sun Hwang , Byoung Gon Yu
IPC分类号： H01G7/06
CPC分类号： H01L29/6684 , B82Y10/00 , G11C11/22 , H01L21/28291 , H01L27/1159 , H01L29/78391
摘要： Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.
摘要翻译：提供一种非易失性存储单元及其制造方法。非易失性存储单元包括存储晶体管和驱动晶体管。存储晶体管包括设置在基板上的半导体层，缓冲层，有机铁电层和栅极电极。驱动晶体管包括设置在基板上的半导体层，缓冲层，栅极绝缘层和栅极电极。存储晶体管和驱动晶体管设置在同一衬底上。非易失性存储单元在可见光区域是透明的。

6. 发明授权

US08404532B2 Transferred thin film transistor and method for manufacturing the same 有权
标题翻译：转移薄膜晶体管及其制造方法
公开(公告)号：US08404532B2
公开(公告)日：2013-03-26
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon Koo , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

7. 发明申请

US20100144088A1 METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME 审中-公开
标题翻译：形成金属氧化物的方法及其形成晶体结构的方法
公开(公告)号：US20100144088A1
公开(公告)日：2010-06-10
申请号：US12631206
申请日：2009-12-04
申请人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
发明人： Jiyoung Oh , Jonghyurk Park , Seung Youl Kang , Chul Am Kim , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L21/328 , C01G9/02
CPC分类号： H01L29/7869 , B82Y10/00 , C01G9/02 , C01P2002/52 , C01P2004/03 , C01P2006/40 , H01L29/66969
摘要： Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
摘要翻译：提供了形成金属氧化物的方法。根据本发明实施方案的形成金属氧化物的方法包括制备包括掺杂剂化学物质的金属氧化物前体溶液，制备包含碱性化学物质的醇基溶液，使醇类溶液与金属氧化物前体反应溶液以形成反应物，并纯化反应物以形成金属氧化物。

8. 发明授权

US08584743B2 Solid type heat dissipation device 有权
标题翻译：固体散热装置
公开(公告)号：US08584743B2
公开(公告)日：2013-11-19
申请号：US12765120
申请日：2010-04-22
申请人： Seok-Hwan Moon , Seung Youl Kang , Kyoung Ik Cho , Moo Jung Chu
发明人： Seok-Hwan Moon , Seung Youl Kang , Kyoung Ik Cho , Moo Jung Chu
IPC分类号： F28F7/00
CPC分类号： F28D15/00 , H01L23/36 , H01L23/373 , H01L2924/0002 , H01L2924/00
摘要： Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.
摘要翻译：提供一种用于电子通信设备的固体型散热装置。固体式散热装置包括水平传递热量的石墨薄板，通过石墨薄板的多个金属填料垂直传递热量，以及附着在石墨薄板的上表面和下表面上的多个金属薄板，连接到金属填料。

9. 发明授权

US06307323B1 Field emission display with diode-type field emitters 有权
标题翻译：具有二极管型场发射器的场发射显示
公开(公告)号：US06307323B1
公开(公告)日：2001-10-23
申请号：US09474528
申请日：1999-12-29
申请人： Yoon Ho Song , Jin Ho Lee , Seung Youl Kang , Kyoung Ik Cho
发明人： Yoon Ho Song , Jin Ho Lee , Seung Youl Kang , Kyoung Ik Cho
IPC分类号： G05G310
CPC分类号： B82Y10/00 , G09G3/22 , H01J31/126 , H01J2201/30457 , H01J2201/30469 , H01J2201/319
摘要： A field emission display in which field emission devices are applied to a flat panel display. A field emission display with diode-type field emitters includes an upper plate and a lower plate, the upper plate and the lower plate are vacuum-packaged in parallel. The lower plate includes a plurality of column signal buses and a plurality of row signal buses, film type field emitters, and switching devices. The column signal buses and the row signal buses are made of metallic material. Pixels are defined by the column signal buses and the row signal buses. A film type field emitter and a switching device are formed inside each pixel. The switching device controls the field emitter on the basis of scan signals and data signals. The scan signals and data signals are loaded to the switching devices through the column signal buses and the row signal buses. The switching device includes at least three electrodes for connection with the column signal bus, the row signal bus, and the field emitter.
摘要翻译：场发射装置用于平板显示器的场致发射显示器。具有二极管型场致发射体的场发射显示器包括上板和下板，上板和下板被并联真空包装。下板包括多个列信号总线和多个行信号总线，薄膜型场发射器和开关装置。列信号总线和行信号总线由金属材料制成。像素由列信号总线和行信号总线定义。在每个像素内部形成有膜型场发射器和开关器件。开关装置根据扫描信号和数据信号控制场发射器。扫描信号和数据信号通过列信号总线和行信号总线加载到开关装置。开关装置包括用于与列信号总线，行信号总线和场发射器连接的至少三个电极。

10. 发明申请

US20110133257A1 TRANSFERRED THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：转印薄膜晶体管及其制造方法
公开(公告)号：US20110133257A1
公开(公告)日：2011-06-09
申请号：US12782303
申请日：2010-05-18
申请人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
发明人： Jae Bon KOO , Jong-Hyun Ahn , Seung Youl Kang , Hasan Musarrat , In-Kyu You , Kyoung Ik Cho
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/78603
摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.
摘要翻译：提供了一种转移的薄膜晶体管及其制造方法。该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

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