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1. 发明授权

US06420440B1 Method for recycling alignment layer materials 有权
标题翻译：回收定向层材料的方法
公开(公告)号：US06420440B1
公开(公告)日：2002-07-16
申请号：US09556299
申请日：2000-04-24
申请人： Bong-Woo Lee , Soo-Won Lee , Sho-Hak Nam , Jin-Ho Ju , Soo-Im Jeong , Hong-Sick Park , Sung-Chul Kang
发明人： Bong-Woo Lee , Soo-Won Lee , Sho-Hak Nam , Jin-Ho Ju , Soo-Im Jeong , Hong-Sick Park , Sung-Chul Kang
IPC分类号： C08J1104
CPC分类号： G02F1/133711
摘要： The present invention relates to a method for recycling an alignment layer material. The recycled alignment layer material shows the same characteristics as an original alignment layer material. The waste solution of the alignment layer material produced during the liquid crystal display manufacturing processes is recycled by solidifying polyamic acids and soluble polyimides by putting a waste solution of the alignment layer material into an organic solution or ultra purified water in which the alignment layer material constituents of polyamic acids and soluble polyimides are insoluble, separating polyamic acids and soluble polyimides from the organic solvent or ultra purified water, and dissolving the separated solid polyamic acids and soluble polyimides into a solvent. Recycling the alignment layer material in this method can significantly reduce the manufacturing costs.
摘要翻译：本发明涉及一种再循环对准层材料的方法。再生取向层材料与原来的配向层材料具有相同的特性。在液晶显示器制造过程中产生的取向层材料的废溶液通过将取向层材料的废溶液放入有机溶液或超纯水中来固化聚酰胺酸和可溶性聚酰亚胺来再循环，其中取向层材料成分的聚酰胺酸和可溶性聚酰亚胺是不溶的，从有机溶剂或超纯水中分离聚酰胺酸和可溶性聚酰亚胺，并将分离的固体聚酰胺酸和可溶性聚酰亚胺溶解在溶剂中。以这种方法回收对准层材料可以显着降低制造成本。

2. 发明授权

US06645682B2 Thinner for rinsing photoresist and method of treating photoresist layer 失效
标题翻译：用于冲洗光刻胶的稀释剂和处理光致抗蚀剂层的方法
公开(公告)号：US06645682B2
公开(公告)日：2003-11-11
申请号：US10169033
申请日：2002-06-25
申请人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
发明人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
IPC分类号： G03F742
CPC分类号： G03F7/168 , G03F7/38 , G03F7/42 , G03F7/422 , H01L21/02052 , H01L21/0274 , H01L21/31133
摘要： A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.
摘要翻译：用于冲洗光致抗蚀剂的稀释剂，包括50至80wt。提供了乙酸正丁酯，丙二醇烷基醚和丙二醇烷基醚乙酸酯的％。稀释剂既不对人体有毒，也不对生态有害，无异味。其废溶液和相关的废水容易交付，以使其更环保。此外，本发明的光致抗蚀剂薄膜具有优异的漂洗能力。

3. 发明授权

US07638800B2 Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same 失效
标题翻译：用于显示装置的线，其制造方法，包括该线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07638800B2
公开(公告)日：2009-12-29
申请号：US10501597
申请日：2002-07-29
申请人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
发明人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
IPC分类号： H01L21/84
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
摘要翻译：首先，使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜，以形成包括多个栅极线，多个栅电极和多个栅极焊盘。接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（NH 4）2（NO 3）6，10-20％NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线线，多个源电极，多个漏电极和多个数据焊盘。钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘。栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的开口率和高对比度。

4. 发明申请

US20080224093A1 ETCHANT FOR SIGNAL WIRE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING ETCHANT 审中-公开
标题翻译：信号线检测器和使用电容器制造薄膜晶体管阵列面板的方法
公开(公告)号：US20080224093A1
公开(公告)日：2008-09-18
申请号：US12106023
申请日：2008-04-18
申请人： Hong-Sick Park , Hong-Je Cho , Sung-Chul Kang , Pong-Ok Park , An-Na Park
发明人： Hong-Sick Park , Hong-Je Cho , Sung-Chul Kang , Pong-Ok Park , An-Na Park
IPC分类号： C09K13/06
CPC分类号： H01L21/32134 , C23F1/20 , C23F1/26 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/4908
摘要： Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)xLy, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
摘要翻译：使用单个蚀刻剂对包括下Al-Nd层和上MoW层的栅极线，包括MoW层的数据线和包括IZO层的像素电极进行图案化。蚀刻剂含有约50-60％的磷酸，约6-10％的硝酸，约15-25％的乙酸，约2-5％的稳定剂的稳定剂和去离子水。稳定剂包括由M（OH）x L L y Y表示的氢氧化物无机酸，其中M包括Zn，Sn，Cr，Al，Ba，Fe ，Ti，Si和B，L包括H 2 O，NH 3，CN和NH 2 R中的至少一个（其中R是烷基），X为2或3，Y为0,1,2或3。

5. 发明申请

US20060011912A1 Method of forming a metal pattern and a method of fabricating tft array panel by using the same 审中-公开
标题翻译：形成金属图案的方法和使用该方法制造tft阵列面板的方法
公开(公告)号：US20060011912A1
公开(公告)日：2006-01-19
申请号：US10516602
申请日：2002-07-24
申请人： Hong-Sick Park , Sung-Chul Kang , Hong-Je Cho , An-Na Park , Pong-ok Park , Chang-Oh Jeong
发明人： Hong-Sick Park , Sung-Chul Kang , Hong-Je Cho , An-Na Park , Pong-ok Park , Chang-Oh Jeong
IPC分类号： H01L29/04
CPC分类号： H01L21/28008 , G03F7/0047 , H01L21/288 , H01L21/32051 , H01L27/12 , H01L27/124 , H01L29/66765 , H01L29/78669 , H01L51/0003 , H01L51/0015 , H01L51/0021 , H01L51/0545
摘要： With a metal pattern formation process and a method of manufacturing a thin film transistor array panel using the metal pattern formation process, an organometallic layer is formed by coating an organometallic complex containing metal. The organometallic layer is exposed to light through a photo mask, and developed to form a metal pattern.
摘要翻译：利用金属图案形成工艺和使用金属图案形成工艺制造薄膜晶体管阵列板的方法，通过涂覆含有金属的有机金属络合物形成有机金属层。有机金属层通过光掩模曝光，并显影形成金属图案。

6. 发明授权

US07141180B2 Etchant for wire, method of manufacturing wire using etchant, thin film transistor array panel including wire and manufacturing method thereof 有权
标题翻译：线蚀刻剂，使用蚀刻剂制造线的方法，包括线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07141180B2
公开(公告)日：2006-11-28
申请号：US10607316
申请日：2003-06-25
申请人： Hong-Sick Park , Sung-Chul Kang , Hong-Je Cho
发明人： Hong-Sick Park , Sung-Chul Kang , Hong-Je Cho
IPC分类号： C09K13/00
CPC分类号： C23F1/30 , C09K13/06 , C23F1/02 , H01L21/32134 , H01L27/124 , H01L27/13
摘要： A method of manufacturing a TFT array panel according to the present invention forms a gate wire on an insulating substrate. The gate wire includes a plurality of gate lines and a plurality of gate electrodes connected to the gate lines. A semiconductor layer and a gate insulating layer are sequentially formed and a data wire is formed thereon. The data wire includes a plurality of data lines intersecting the gate lines, a plurality of source electrodes connected to the data lines and placed close to the gate electrodes, and a plurality of drain electrodes opposite the source electrodes with respect to the gate electrodes. A passivation layer is deposited and patterned to form a plurality of contact holes exposing the drain electrodes at least. A conductive layer made of Ag or Ag alloy is deposited on the passivation layer, and is patterned using an etchant containing ferric nitrate, nitric acid, acetic acid, hexamethylenetetramine and deionized water to form a plurality of reflective films electrically connected to the drain electrodes.
摘要翻译：根据本发明的TFT阵列板的制造方法在绝缘基板上形成栅极线。栅极线包括多个栅极线和连接到栅极线的多个栅电极。依次形成半导体层和栅极绝缘层，并在其上形成数据线。数据线包括与栅极线交叉的多条数据线，与数据线连接并靠近栅电极放置的多个源电极，以及与源电极相对于栅电极相对的多个漏电极。钝化层被沉积并图案化以形成至少暴露漏电极的多个接触孔。由Ag或Ag合金制成的导电层沉积在钝化层上，并使用含有硝酸铁，硝酸，乙酸，六亚甲基四胺和去离子水的蚀刻剂进行图案化，以形成电连接到漏电极的多个反射膜。

7. 发明申请

US20050173732A1 Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same 失效
标题翻译：用于显示装置的线，其制造方法，包括该线的薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20050173732A1
公开(公告)日：2005-08-11
申请号：US10501597
申请日：2002-07-29
申请人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
发明人： Seung-Hee Yu , Mun-Pyo Hong , Soo-Guy Rho , Nam-Seok Rho , Keun-Kyu Song , Hee-Hwan Choe , Bo-Sung Kim , Sang-Gab Kim , Sung-Chul Kang , Hong-Sick Park
IPC分类号： G02F1/1343 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/3205 , H01L23/52 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L27/10
CPC分类号： G02F1/136286 , G02F2001/136295
摘要： First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(N114)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and pattered to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ration of the pixel and high contrast ratio.
摘要翻译：首先，使用包括8-12％Ce（NH 4）2（NO 3）6的蚀刻剂沉积和图案化Cr膜和CrOx膜， SUB，10-20％NH 3和剩余的超纯水，以形成包括多个栅极线，多个栅电极和多个栅极焊盘的栅极线。接下来，依次形成栅极绝缘膜，半导体层和欧姆接触层。依次沉积Cr膜和CrOx膜，并使用包括8-12％Ce（N11 4）2（NO 3）3的蚀刻剂进行图案化，）6N，10-20％NH 3和剩余的超纯水，以形成数据线，其包括多条数据线，多个源电极，多个漏极电极和多个数据焊盘。钝化层被沉积并图案化以形成分别暴露漏电极，栅极焊盘和数据焊盘的多个接触孔。沉积透明导电材料或反射导电材料以形成多个像素电极，分别与漏电极，栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘。栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜，并且不增加黑色亮度。因此，不需要在滤色器面板上设置单独的黑矩阵，从而确保像素的孔径比和高对比度。

8. 发明授权

US07371622B2 Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant 有权
标题翻译：信号线蚀刻剂和使用蚀刻剂制造薄膜晶体管阵列面板的方法
公开(公告)号：US07371622B2
公开(公告)日：2008-05-13
申请号：US10772293
申请日：2004-02-06
申请人： Hong-Sick Park , Hong-Je Cho , Sung-Chul Kang , Pong-Ok Park , An-Na Park
发明人： Hong-Sick Park , Hong-Je Cho , Sung-Chul Kang , Pong-Ok Park , An-Na Park
IPC分类号： H01L21/00
CPC分类号： H01L21/32134 , C23F1/20 , C23F1/26 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/4908
摘要： Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
摘要翻译：使用单个蚀刻剂对包括下Al-Nd层和上MoW层的栅极线，包括MoW层的数据线和包括IZO层的像素电极进行图案化。蚀刻剂含有约50-60％的磷酸，约6-10％的硝酸，约15-25％的乙酸，约2-5％的稳定剂的稳定剂和去离子水。稳定剂包括由M（OH）x L L Y Y表示的氧化氢无机酸，其中M包括Zn，Sn，Cr，Al，Ba，Fe中的至少一种，Ti，Si和B，L包括H 2 O，NH 3，CN和NH 2 R中的至少一个（其中R是烷基），X为2或3，Y为0,1,2或3。

9. 发明授权

US06800564B2 Etching solution for signal wire and method of fabricating thin film transistor array panel with the same 有权
标题翻译：用于信号线的蚀刻解决方案和制造薄膜晶体管阵列面板的方法相同
公开(公告)号：US06800564B2
公开(公告)日：2004-10-05
申请号：US10190164
申请日：2002-07-05
申请人： Hong-Sick Park , Sung-Chul Kang
发明人： Hong-Sick Park , Sung-Chul Kang
IPC分类号： H01L21302
CPC分类号： H01L27/124 , G02F1/136286
摘要： In a method of fabricating a TFT array substrate, a gate wire is formed on an insulating substrate. The gate wire has gate lines, gate electrodes, and gate pads connected to the gate lines. A gate insulating layer and a semiconductor layer are formed in sequence. A data wire is formed, which includes data lines intersecting the gate lines, source electrodes connected to the data lines and placed close to the gate electrodes, drain electrodes opposite the source electrodes with respect to the gate electrodes, and data pads connected to the data lines. A protective layer is deposited, and is patterned to form contact holes exposing at least the drain electrodes. A silver or silver alloy conductive layer is deposited on the protective layer. The conductive layer is patterned using an etching solution with phosphoric acid, nitric acid, acetic acid, potassium peroxymonosulphate and ultra-pure water or an etching solution with nitric acid, acetic acid, phosphoric acid, ethylene glycol and ultra-pure water to thereby form a reflecting layer. The reflecting layer is connected to the drain electrodes through the contact holes.
摘要翻译：在制造TFT阵列基板的方法中，在绝缘基板上形成栅极线。栅极线具有连接到栅极线的栅极线，栅电极和栅极焊盘。依次形成栅极绝缘层和半导体层。形成数据线，其包括与栅极线相交的数据线，连接到数据线并放置在栅电极附近的源电极，相对于栅电极与源电极相对的漏电极，以及连接到数据的数据焊盘线条。沉积保护层，并且被图案化以形成暴露至少漏电极的接触孔。银或银合金导电层沉积在保护层上。使用具有磷酸，硝酸，乙酸，过氧化硫酸钠和超纯水的蚀刻溶液或者用硝酸，乙酸，磷酸，乙二醇和超纯水的蚀刻溶液来形成导电层，由此形成反射层。反射层通过接触孔与漏电极连接。

10. 发明授权

US07378230B2 Photoresist composition for multi-micro nozzle head coater 有权
标题翻译：用于多微喷嘴头涂布机的光刻胶组合物
公开(公告)号：US07378230B2
公开(公告)日：2008-05-27
申请号：US10750845
申请日：2004-01-05
申请人： Sung-Chul Kang , Jin-Ho Ju , You-Kyoung Lee , Dong-Ki Lee , Hyo-Youl Kim , Hoon Kang , Seung-Uk Lee , Byung-Uk Kim
发明人： Sung-Chul Kang , Jin-Ho Ju , You-Kyoung Lee , Dong-Ki Lee , Hyo-Youl Kim , Hoon Kang , Seung-Uk Lee , Byung-Uk Kim
IPC分类号： G03F7/32 , G03F7/023
CPC分类号： G03F7/0236 , G03F7/0048
摘要： The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits.The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.
摘要翻译：本发明涉及一种用于MMN（多微喷嘴）喷涂机的光致抗蚀剂组合物，更具体地说涉及一种光致抗蚀剂组合物，其包含分子量范围为2000-12,000的酚醛清漆树脂，二叠氮光敏化合物，有机溶剂和用于液晶显示电路的Si基表面活性剂。本发明的液晶显示电路用光致抗蚀剂组合物解决了用于大规模基板玻璃的MMN头涂布机中发生的污渍问题，并且改善了涂布特性，从而可以在工业上得到利用并且预期显着提高生产率。

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