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    • 3. 发明授权
    • Photoresist composition having a high heat resistance
    • 具有高耐热性的光刻胶组合物
    • US07144662B2
    • 2006-12-05
    • US10493193
    • 2002-02-20
    • Dong-Ki LeeSung-Chul KangYou-Kyoung LeeJin-Ho Ju
    • Dong-Ki LeeSung-Chul KangYou-Kyoung LeeJin-Ho Ju
    • G03F7/023
    • G03F7/0226
    • The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that N+ ion doping in production of TFT-LCD can take place due its high heat resistance.
    • 本发明涉及在LCD的生产过程中使用的具有高耐热性的光致抗蚀剂组合物,更具体地说,涉及具有高耐热性,能够降低工艺简化的工艺(一种方法)的光致抗蚀剂组合物,以及 削减支出。 本发明的组合物通过使得本发明的组合物代替本发明的组合物可以跳过5种工艺,例如形成金属膜的Cr金属沉积和金属的整个表面的光刻/蚀刻/ PR剥离/蚀刻步骤 通常的金属膜,由于其高耐热性,可以发生TFT-LCD的生产中的N + + / - 离子掺杂。
    • 4. 发明授权
    • Photoresist composition and method of forming pattern using the same
    • 光刻胶组合物和使用其形成图案的方法
    • US06686120B2
    • 2004-02-03
    • US10219711
    • 2002-08-15
    • You-Kyoung LeeSung-Chul KangJin-Ho JuDong-Ki Lee
    • You-Kyoung LeeSung-Chul KangJin-Ho JuDong-Ki Lee
    • G03F7023
    • G03F7/0233G03F7/40
    • Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow.
    • 公开了一种光致抗蚀剂组合物,其包括热酸产生剂和使用其形成图案的方法。 光致抗蚀剂组合物包括约100重量份的碱溶性丙烯酸共聚物,约5-100重量份的1,2-醌二叠氮化合物,约2-35重量份含氮交联剂和约0.1重量份 -10重量份的通过加热产生酸的热酸发生剂。 将光致抗蚀剂组合物涂布在基材上并干燥以形成光致抗蚀剂层。 通过使用具有预定形状的掩模来曝光光致抗蚀剂层。 通过使用碱性水溶液来形成曝光的光致抗蚀剂层以形成光致抗蚀剂图案。 将得到的光致抗蚀剂图案加热固化而不产生热回流。