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1. 发明授权

US07141188B2 Organic compositions 失效
公开(公告)号：US07141188B2
公开(公告)日：2006-11-28
申请号：US10158513
申请日：2002-05-30
申请人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
发明人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
IPC分类号： H01L21/4763 , H01B3/22 , C08F8/00 , C08J9/02
CPC分类号： H01L21/31695 , C08G61/02 , C08L65/00 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/312 , H01L21/3122 , H05K1/0313
摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

2. 发明授权

US07060204B2 Organic compositions 失效
标题翻译：有机成分
公开(公告)号：US07060204B2
公开(公告)日：2006-06-13
申请号：US10404047
申请日：2003-04-02
申请人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
发明人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
IPC分类号： H01B1/12 , C08J9/38 , C08J9/00
CPC分类号： H01L21/02126 , C08G61/02 , C08L65/00 , H01L21/02203 , H01L21/02282 , H01L21/31695 , H05K1/0313
摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.
摘要翻译：本发明提供一种组合物，其包含：（a）电介质材料; 和（b）包含至少两个稠合芳环的致孔剂，其中每个稠合芳环在其上具有至少一个烷基取代基，并且在相邻芳环上的至少两个烷基取代基之间存在键。优选地，电介质材料是包含（a）热固性组分的组合物，其包含（1）如下所述的任选的式I的单体和（2）至少一种如下所述的式II的低聚物或聚合物，其中Q，G，h ，I，I和w如下所述，（b）致孔剂。优选地，致孔剂选自非官能化聚苊烯均聚物，官能化聚苊烯均聚物，聚苊烯共聚物，聚降冰片烯，聚己内酯，聚（2-乙烯基萘），乙烯基蒽，聚苯乙烯，聚苯乙烯衍生物，聚硅氧烷，聚酯，聚醚，聚丙烯酸酯，脂族聚碳酸酯，聚砜，聚丙交酯及其共混物。本发明的组合物特别可用作微芯片，多芯片模块，层叠电路板和印刷线路板中的介电基板材料。

3. 发明授权

US07049005B2 Organic compositions 有权
公开(公告)号：US07049005B2
公开(公告)日：2006-05-23
申请号：US10160773
申请日：2002-05-30
申请人： Paul G. Apen , William B. Bedwell , Nancy Iwamoto , Boris A. Korolev , Kreisler S. Lau , Bo Li , Ananth Naman
发明人： Paul G. Apen , William B. Bedwell , Nancy Iwamoto , Boris A. Korolev , Kreisler S. Lau , Bo Li , Ananth Naman
IPC分类号： B32B9/04
CPC分类号： H01L21/02118 , C08G61/02 , C08L65/00 , H01L21/02126 , H01L21/02282 , H01L21/312 , H01L21/31695 , H05K1/0313 , Y10T428/31663
摘要： The present invention provides a composition comprising: (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; G is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; (b) adhesion promoter comprising compound having at least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to the substrate. The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.

4. 发明授权

US06998178B2 Organic compositions 失效
标题翻译：有机成分
公开(公告)号：US06998178B2
公开(公告)日：2006-02-14
申请号：US10404644
申请日：2003-04-02
申请人： Paul G. Apen , William B. Bedwell , Nancy Iwamoto , Boris A. Korolev , Kreisler S. Lau , Bo Li , Ananth Naman
发明人： Paul G. Apen , William B. Bedwell , Nancy Iwamoto , Boris A. Korolev , Kreisler S. Lau , Bo Li , Ananth Naman
IPC分类号： B32B9/04
CPC分类号： C08G61/02 , H01L21/02118 , H01L21/02126 , H01L21/02282 , H01L21/312 , Y10T428/31663
摘要： The present invention provides a composition comprising: (a) thermosetling component comprising (1) optionally at least one monomer of Formula I as sel forth below and (2) at least one oligomer or polymer of Formula II set forth below where E is a cage compound (defined below); each Q is the same or different and selected from hydrogen, aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; Gw is aryl or substituted aryl where substituents include halogen and alkyl; h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1; adhesion promoter comprising compound having least bifunctionality wherein the bifunctionality may be the same or different and the first functionality is capable of interacting with the thermosetting component (a) and the second functionality is capable of interacting with a substrate when the composition is applied to the substrate. The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.
摘要翻译：本发明提供一种组合物

5. 发明授权

US08475666B2 Method for making toughening agent materials 有权
标题翻译：制造增韧剂材料的方法
公开(公告)号：US08475666B2
公开(公告)日：2013-07-02
申请号：US10940686
申请日：2004-09-15
申请人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
发明人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
IPC分类号： H01L21/30
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.
摘要翻译：一种增韧剂组合物，用于在施加到所述膜时增加有机硅酸盐玻璃介电膜的疏水性。它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分和选自胺，鎓化合物和碱金属氢氧化物的活化剂。

6. 发明申请

US20090026924A1 METHODS OF MAKING LOW-REFRACTIVE INDEX AND/OR LOW-K ORGANOSILICATE COATINGS 审中-公开
标题翻译：制造低折射率和/或低K有机硅涂层的方法
公开(公告)号：US20090026924A1
公开(公告)日：2009-01-29
申请号：US11931088
申请日：2007-10-31
申请人： Roger Y. Leung , De-Ling Zhou , Wenya Fan , Peter A. Smith , Paul G. Apen , Brian J. Daniels , Ananth Naman , Teresa A. Ramos , Robert R. Roth
发明人： Roger Y. Leung , De-Ling Zhou , Wenya Fan , Peter A. Smith , Paul G. Apen , Brian J. Daniels , Ananth Naman , Teresa A. Ramos , Robert R. Roth
IPC分类号： H01L51/54 , H01L33/00 , B32B3/26 , B05D5/06 , H01L27/15
CPC分类号： C09D183/02 , H01L51/5262 , Y10T428/249953
摘要： A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.
摘要翻译：一种在基本上透明的基底上形成基本透明的纳米多孔有机硅酸盐膜的方法，用于诸如有机发光二极管（OLED）的光学照明装置中。该方法包括首先制备包含含硅预聚物，致孔剂和催化剂的组合物。将组合物涂布在对可见光基本透明的基底上，在其上形成膜。然后通过交联使膜凝胶化并通过加热固化，使得所得固化膜对可见光基本上是透明的。优选的是，衬底和纳米多孔膜对可见光透明至少98％。包括本发明所得结构的光学器件表现出改进的光提取和照度，其中纳米多孔有机硅酸盐膜具有在1.05至1.4范围内的低折射率，用作这种器件中的阻抗匹配层。

7. 发明授权

US07153783B2 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications 失效
公开(公告)号：US07153783B2
公开(公告)日：2006-12-26
申请号：US10886247
申请日：2004-07-07
申请人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
发明人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , H01L21/02318 , H01L21/3105 , H01L21/316
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

8. 发明申请

US20050095840A1 Repairing damage to low-k dielectric materials using silylating agents 有权
标题翻译：使用硅烷化剂修复对低k电介质材料的损坏
公开(公告)号：US20050095840A1
公开(公告)日：2005-05-05
申请号：US10940682
申请日：2004-09-15
申请人： Anil Bhanap , Teresa Ramos , Nancy Iwamoto , Roger Leung , Ananth Naman
发明人： Anil Bhanap , Teresa Ramos , Nancy Iwamoto , Roger Leung , Ananth Naman
IPC分类号： H01L21/4763
CPC分类号： H01L21/31058 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801
摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.
摘要翻译：用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。该方法阻止了这些膜中应力诱发的空隙的形成。通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。之后通过通孔和沟槽填充金属并进行退火处理。在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质膜的疏水性。

9. 发明授权

US07709371B2 Repairing damage to low-k dielectric materials using silylating agents 有权
标题翻译：使用硅烷化剂修复对低k电介质材料的损坏
公开(公告)号：US07709371B2
公开(公告)日：2010-05-04
申请号：US10940682
申请日：2004-09-15
申请人： Anil S. Bhanap , Teresa A. Ramos , Nancy Iwamoto , Roger Y. Leung , Ananth Naman
发明人： Anil S. Bhanap , Teresa A. Ramos , Nancy Iwamoto , Roger Y. Leung , Ananth Naman
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/31
CPC分类号： H01L21/31058 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801
摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.
摘要翻译：用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。该方法阻止了这些膜中应力诱发的空隙的形成。通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。之后通过通孔和沟槽填充金属并进行退火处理。在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使薄膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质薄膜的疏水性。

10. 发明申请

US20060057855A1 Method for making toughening agent materials 有权
公开(公告)号：US20060057855A1
公开(公告)日：2006-03-16
申请号：US10940686
申请日：2004-09-15
申请人： Teresa Ramos , Robert Roth , Anil Bhanap , Paul Apen , Denis Endisch , Brian Daniels , Ananth Naman , Nancy Iwamoto , Roger Leung
发明人： Teresa Ramos , Robert Roth , Anil Bhanap , Paul Apen , Denis Endisch , Brian Daniels , Ananth Naman , Nancy Iwamoto , Roger Leung
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.

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