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1. 发明授权

US07015061B2 Low temperature curable materials for optical applications 有权
标题翻译：用于光学应用的低温可固化材料
公开(公告)号：US07015061B2
公开(公告)日：2006-03-21
申请号：US10910673
申请日：2004-08-03
申请人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Paul G. Apen
发明人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Paul G. Apen
IPC分类号： H01L21/00
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L27/1292
摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer having at least one organic group, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating the composition at a temperature of about 250° C. or less for about 30 minutes or less, to produce a substantially crack-free and substantially void-free silicon polymer film, which silicon polymer has a weight ratio of organic groups to SiO groups of about 0.15:1 or more, and which silicon containing polymer film has a field breakdown voltage of about 2.5 MV/cm or more and a transparency to light in the range of about 400 nm to about 700 nm of about 95% or more.
摘要翻译：本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。通过（a）制备包含至少一种具有至少一个有机基团的含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用该组合物涂覆基材以在基材上形成膜，（c）通过在约250℃或更低的温度下加热该组合物约30分钟或更短时间来交联该组合物，以产生基本上裂纹该硅聚合物的有机基团与SiO基的重量比为约0.15:1或更高，并且含硅聚合物膜的场击穿电压为约2.5MV / cm，或者在约400nm至约700nm的范围内的光的透明度为约95％或更高。

2. 发明授权

US07445953B2 Low temperature curable materials for optical applications 有权
标题翻译：用于光学应用的低温可固化材料
公开(公告)号：US07445953B2
公开(公告)日：2008-11-04
申请号：US11192352
申请日：2005-07-29
申请人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Paul G. Apen , Peter Alfred Smith , JingHong Chen
发明人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Paul G. Apen , Peter Alfred Smith , JingHong Chen
IPC分类号： H01L21/22
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/3127 , H01L21/316 , H01L27/1292
摘要： The invention relates to low temperature curable spin-on glass materials which are useful for electronic applications, such as optical devices. A substantially crack-free and substantially void-free silicon polymer film is produced by (a) preparing a composition comprising at least one silicon containing pre-polymer, a catalyst, and optionally water; (b) coating a substrate with the composition to form a film on the substrate, (c) crosslinking the composition by heating to produce a substantially crack-free and substantially void-free silicon polymer film, having a a transparency to light in the range of about 400 nm to about 800 nm of about 95% or more.
摘要翻译：本发明涉及可用于电子应用的低温可固化旋涂玻璃材料，例如光学器件。通过（a）制备包含至少一种含硅预聚物，催化剂和任选的水的组合物来制备基本上无裂纹且基本上无空隙的硅聚合物膜; （b）用所述组合物涂覆基材以在基材上形成膜，（c）通过加热使组合物交联以产生基本上无裂纹且基本上无空隙的硅聚合物膜，其具有在约400nm至约800nm约95％或更多。

3. 发明授权

US07153783B2 Materials with enhanced properties for shallow trench isolation/premetal dielectric applications 失效
公开(公告)号：US07153783B2
公开(公告)日：2006-12-26
申请号：US10886247
申请日：2004-07-07
申请人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
发明人： Victor Lu , Lei Jin , Arlene J. Suedmeyer , Denis H. Endisch , Paul G. Apen , Brian J. Daniels , Deling Zhou , Ananth Naman
IPC分类号： H01L21/31
CPC分类号： H01L21/02118 , H01L21/02318 , H01L21/3105 , H01L21/316
摘要： The present invention relates to semiconductor device fabrication and more specifically to a method and material for forming high density shallow trench isolation structures in integrated circuits capable of withstanding wet etch treatments. A silica dielectric film is formed on a substrate. The silica dielectric film has a density of from about 1.0 to about 2.3 g/ml, a SiC:SiO bond ratio of about 0.015 or more, a dielectric constant of about 4.0 or less, a breakdown voltage of about 2 MV/cm or more, and a wet etch resistance in a 100:1 by volume mixture of water and hydrogen fluoride of about 30 Å/minute or less.

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