专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06878184B1 Nanoparticle synthesis and the formation of inks therefrom 有权
标题翻译：纳米颗粒合成和油墨的形成
公开(公告)号：US06878184B1
公开(公告)日：2005-04-12
申请号：US10215952
申请日：2002-08-09
申请人： Joerg Rockenberger , Fabio Zurcher , Scott Haubrich , Nassrin Sleiman
发明人： Joerg Rockenberger , Fabio Zurcher , Scott Haubrich , Nassrin Sleiman
IPC分类号： B22F1/00 , B22F9/24 , C09D11/00 , C09D11/02 , H01B1/02 , H01B1/22 , H05K3/12
CPC分类号： B22F1/0022 , B22F1/0018 , B22F9/24 , B22F2998/00 , B82Y30/00 , C09D11/03 , C09D11/30 , H01B1/02 , H01B1/22 , H05K3/1241 , B22F1/0062
摘要： Methods for making metal-based nanoparticles and inks are disclosed. In accordance with the method of the present invention, molecular metal precursors are reduced in the presence of a reaction medium to form the nanoparticles. The molecular metal precursors are preferably reduced by heating the metal precursor in the medium, by adding a reducing agent, such an aldehyde or a combination thereof. Metal precursor are preferably metal oxides, transition metal complexes or combination thereof. The method of the present invention is used to make high yield nanoparticles with a range of particle size distributions. Nanoparticle formed by the present invention include mixtures of nanoparticle, alloy nanoparticles, metal core shell nanoparticles or nanoparticle comprising a single metal species.
摘要翻译：公开了制备金属基纳米颗粒和油墨的方法。根据本发明的方法，分子金属前体在反应介质存在下还原形成纳米颗粒。分子金属前体优选通过加热介质中的金属前体，通过加入还原剂，醛或其组合来还原。金属前体优选为金属氧化物，过渡金属络合物或其组合。本发明的方法用于制备具有粒度分布范围的高产率纳米颗粒。由本发明形成的纳米颗粒包括纳米颗粒，合金纳米颗粒，金属核壳纳米颗粒或包含单一金属物质的纳米颗粒的混合物。

2. 发明授权

US07141188B2 Organic compositions 失效
公开(公告)号：US07141188B2
公开(公告)日：2006-11-28
申请号：US10158513
申请日：2002-05-30
申请人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
发明人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
IPC分类号： H01L21/4763 , H01B3/22 , C08F8/00 , C08J9/02
CPC分类号： H01L21/31695 , C08G61/02 , C08L65/00 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02282 , H01L21/312 , H01L21/3122 , H05K1/0313
摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.

3. 发明授权

US07060204B2 Organic compositions 失效
标题翻译：有机成分
公开(公告)号：US07060204B2
公开(公告)日：2006-06-13
申请号：US10404047
申请日：2003-04-02
申请人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
发明人： Bo Li , Nancy Iwamoto , Boris Korolev , Paul G. Apen , Kreisler Lau , John G. Sikonia , Ananth Naman , Amauel Gebrebrhan , Nassrin Sleiman , Ruslan Zherebin
IPC分类号： H01B1/12 , C08J9/38 , C08J9/00
CPC分类号： H01L21/02126 , C08G61/02 , C08L65/00 , H01L21/02203 , H01L21/02282 , H01L21/31695 , H05K1/0313
摘要： The present invention provides a composition comprising: (a) dielectric material; and (b) porogen comprising at least two fused aromatic rings wherein each of the fused aromatic rings has at least one alkyl substituent thereon and a bond exists between at least two of the alkyl substituents on adjacent aromatic rings. Preferably, the dielectric material is a composition comprising (a) thermosetting component comprising (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where Q, G, h, I, I, and w are as set forth below and (b) porogen. Preferably, the porogen is selected from the group consisting of unfunctionalized polyacenaphthylene homopolymer, functionalized polyacenaphthylene homopolymer, polyacenaphthylene copolymer, polynorbornene, polycaprolactone, poly(2-vinylnaphthalene), vinyl anthracene, polystyrene, polystyrene derivatives, polysiloxane, polyester, polyether, polyacrylate, aliphatic polycarbonate, polysulfone, polylactide, and blends thereof. The present compositions are particularly useful as dielectric substrate material in microchips, multichip modules, laminated circuit boards, and printed wiring boards.
摘要翻译：本发明提供一种组合物，其包含：（a）电介质材料; 和（b）包含至少两个稠合芳环的致孔剂，其中每个稠合芳环在其上具有至少一个烷基取代基，并且在相邻芳环上的至少两个烷基取代基之间存在键。优选地，电介质材料是包含（a）热固性组分的组合物，其包含（1）如下所述的任选的式I的单体和（2）至少一种如下所述的式II的低聚物或聚合物，其中Q，G，h ，I，I和w如下所述，（b）致孔剂。优选地，致孔剂选自非官能化聚苊烯均聚物，官能化聚苊烯均聚物，聚苊烯共聚物，聚降冰片烯，聚己内酯，聚（2-乙烯基萘），乙烯基蒽，聚苯乙烯，聚苯乙烯衍生物，聚硅氧烷，聚酯，聚醚，聚丙烯酸酯，脂族聚碳酸酯，聚砜，聚丙交酯及其共混物。本发明的组合物特别可用作微芯片，多芯片模块，层叠电路板和印刷线路板中的介电基板材料。

4. 发明授权

US07315068B2 Interface layer for the fabrication of electronic devices 失效
标题翻译：接口层用于制造电子设备
公开(公告)号：US07315068B2
公开(公告)日：2008-01-01
申请号：US11077240
申请日：2005-03-09
申请人： Scott Haubrich , Klaus Kunze , James C. Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
发明人： Scott Haubrich , Klaus Kunze , James C. Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
IPC分类号： H01L29/94
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.
摘要翻译：本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

5. 发明申请

US20050164480A1 Interface layer for the fabrication of electronic devices 失效
公开(公告)号：US20050164480A1
公开(公告)日：2005-07-28
申请号：US11077240
申请日：2005-03-09
申请人： Scott Haubrich , Klaus Kunze , James Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Christopher Spindt
发明人： Scott Haubrich , Klaus Kunze , James Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Christopher Spindt
IPC分类号： H01L21/44 , H01L21/76 , H01L21/77
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

6. 发明授权

US06911385B1 Interface layer for the fabrication of electronic devices 失效
标题翻译：接口层用于制造电子设备
公开(公告)号：US06911385B1
公开(公告)日：2005-06-28
申请号：US10226903
申请日：2002-08-22
申请人： Scott Haubrich , Klaus Kunze , James C Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
发明人： Scott Haubrich , Klaus Kunze , James C Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
IPC分类号： H01L21/44 , H01L21/76 , H01L21/77
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.
摘要翻译：本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式