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1. 发明授权

US07709371B2 Repairing damage to low-k dielectric materials using silylating agents 有权
标题翻译：使用硅烷化剂修复对低k电介质材料的损坏
公开(公告)号：US07709371B2
公开(公告)日：2010-05-04
申请号：US10940682
申请日：2004-09-15
申请人： Anil S. Bhanap , Teresa A. Ramos , Nancy Iwamoto , Roger Y. Leung , Ananth Naman
发明人： Anil S. Bhanap , Teresa A. Ramos , Nancy Iwamoto , Roger Y. Leung , Ananth Naman
IPC分类号： H01L21/4763 , H01L21/302 , H01L21/31
CPC分类号： H01L21/31058 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801
摘要： A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.
摘要翻译：用于恢复已进行蚀刻剂或灰化处理的有机硅酸盐玻璃介电膜表面的疏水性的方法。这些膜在集成电路的制造中用作绝缘材料，以确保这些膜中的低和稳定的介电性能。该方法阻止了这些膜中应力诱发的空隙的形成。通过使有机硅酸盐玻璃电介质膜经受蚀刻剂或灰化试剂以形成通孔和沟槽，以除去至少一部分先前存在的含碳部分并降低所述有机硅酸盐玻璃电介质膜的疏水性。之后通过通孔和沟槽填充金属并进行退火处理。在将薄膜进行蚀刻剂或灰化试剂之后，但在进行退火处理之前，使薄膜与增韧剂组合物接触以还原一些含碳部分并增加有机硅酸盐玻璃电介质薄膜的疏水性。

2. 发明授权

US07915159B2 Treating agent materials 有权
标题翻译：处理剂材料
公开(公告)号：US07915159B2
公开(公告)日：2011-03-29
申请号：US11203558
申请日：2005-08-12
申请人： Anil S. Bhanap , Boris A. Korolev , Roger Y. Leung , Beth C. Munoz
发明人： Anil S. Bhanap , Boris A. Korolev , Roger Y. Leung , Beth C. Munoz
IPC分类号： H01L21/4763 , C08J5/12 , C04B28/36 , C04B28/26 , C09D7/00
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and a solvent or mixture of a main solvent and a co-solvent.
摘要翻译：一种用于在施加到所述膜上时增加有机硅酸盐玻璃介电膜的疏水性的处理剂组合物。它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分，以及可以是酸，碱，鎓化合物，脱水剂及其组合的活化剂和溶剂或混合物的主要溶剂和共溶剂。

3. 发明授权

US08475666B2 Method for making toughening agent materials 有权
标题翻译：制造增韧剂材料的方法
公开(公告)号：US08475666B2
公开(公告)日：2013-07-02
申请号：US10940686
申请日：2004-09-15
申请人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
发明人： Teresa A. Ramos , Robert R. Roth , Anil S. Bhanap , Paul G. Apen , Denis H. Endisch , Brian J. Daniels , Ananth Naman , Nancy Iwamoto , Roger Y. Leung
IPC分类号： H01L21/30
CPC分类号： H01L21/02216 , H01L21/02126 , H01L21/316 , H01L21/31695 , H01L21/76814 , H01L21/76826
摘要： A toughening agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent selected from the group consisting of an amine, an onium compound and an alkali metal hydroxide.
摘要翻译：一种增韧剂组合物，用于在施加到所述膜时增加有机硅酸盐玻璃介电膜的疏水性。它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分和选自胺，鎓化合物和碱金属氢氧化物的活化剂。

4. 发明授权

US07678712B2 Vapor phase treatment of dielectric materials 失效
标题翻译：介电材料的气相处理
公开(公告)号：US07678712B2
公开(公告)日：2010-03-16
申请号：US11086010
申请日：2005-03-22
申请人： Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
发明人： Anil S. Bhanap , Robert R. Roth , Kikue S. Burnham , Brian J. Daniels , Denis H. Endisch , Ilan Golecki
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C23C16/56 , H01L21/02203 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02359 , H01L21/3105 , H01L21/76814
摘要： The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
摘要翻译：本发明涉及一种用于涂覆有机硅酸盐玻璃介电薄膜的表面改性剂组合物的方法。更具体地说，本发明涉及一种在底物上处理硅酸盐或有机硅酸盐电介质膜的方法，该膜包含硅烷醇部分或已从其中除去至少一些先前存在的含碳部分。当膜是多孔的时，该处理向膜中加入含碳部分并且/或密封膜的表面孔。

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