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1. 发明申请

US20060019476A1 Method for making a detachable semiconductor substrate and for obtaining a semiconductor element 有权
标题翻译：制造可分离半导体衬底并获得半导体元件的方法
公开(公告)号：US20060019476A1
公开(公告)日：2006-01-26
申请号：US10530640
申请日：2003-10-03
申请人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
发明人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： The invention concerns a method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate (1) according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face (2) of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face (2) of the substrate (1) in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material (6) on said face of the substrate to provide at least one epitaxial layer on said thin film.
摘要翻译：本发明涉及一种用于形成可以拆卸的半导体衬底的方法，包括以下步骤：根据能够构成脆化层的条件在基底（1）中引入气态物质，通过存在于所述微孔腔和/或微气泡，因此薄层的半导体材料被限定在脆化层和基底的一个面（2）之间，热处理基底以增加脆化层的脆性水平，所述热处理继续直到在该步骤期间在泡罩形式的基底（1）的所述面（2）上出现局部变形，但在该步骤期间没有产生薄层的剥落，并且在该方法的继续期间，半导体材料（6）的外延所述衬底的所述表面在所述薄膜上提供至少一个外延层。

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