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1. 发明授权

US6110802A Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate 失效
标题翻译：一种生产具有低位错密度的结构的方法，包括埋在半导体衬底中的氧化物层
公开(公告)号：US6110802A
公开(公告)日：2000-08-29
申请号：US737812
申请日：1997-03-31
申请人： Bernard Aspar , Jacques Margail , Catherine Pudda
发明人： Bernard Aspar , Jacques Margail , Catherine Pudda
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/762 , H01L27/12
CPC分类号： H01L21/26533 , H01L21/76243
摘要： Process for producing a structure having a low dislocation density comprising an oxide layer buried in a semiconductor substrate. This process for producing an epitaxied structure with a low dislocation density has the structure incorporating an oxide layer (6) in a substrate (4) made from a semiconductor material and successively involves at least one implantation of oxygen ions in the substrate (4), at least one first conditioning heat treatment of the substrate, an epitaxy of a layer (14) of a semiconductor material on the substrate and a second heat treatment for eliminating dislocations (8) from the structure.
摘要翻译： PCT No.PCT / FR95 / 00644 Sec。 371日期1997年3月31日 102（e）1997年3月31日PCT PCT 1995年5月17日PCT公布。出版物WO95 / 31825 日期：1995年11月23日制造具有低位错密度的结构的方法，包括埋在半导体衬底中的氧化物层。用于制造具有低位错密度的表面结构的该方法具有在由半导体材料制成的衬底（4）中结合有氧化物层（6）的结构，并且在衬底（4）中依次包括至少一次注入氧离子，衬底的至少一个第一调节热处理，衬底上的半导体材料的层（14）的外延和用于消除所述结构的位错（8）的第二热处理。

2. 发明授权

US08193069B2 Stacked structure and production method thereof 有权
标题翻译：堆叠结构及其制造方法
公开(公告)号：US08193069B2
公开(公告)日：2012-06-05
申请号：US10565621
申请日：2004-07-15
申请人： Hubert Moriceau , Bernard Aspar , Jacques Margail
发明人： Hubert Moriceau , Bernard Aspar , Jacques Margail
IPC分类号： H01L21/76
CPC分类号： B81B3/001 , B81C2201/112 , H01L21/76251 , H01L21/76256
摘要： The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.
摘要翻译：本发明涉及一种堆叠结构的制造方法。本发明的方法包括以下步骤：a）使用例如由硅制成的第一板（1）和例如由硅制成的第二板（5），使得在至少部分地，所述第一（1）和第二（5）板中的至少一个具有不能结合到另一个板的表面（2; 7） b）在第一板的表面（2）和/或第二板的表面（7）的至少一部分上提供例如由氧化硅制成的表面层（3; 8）（5）; 和c）将两个板（1; 5）彼此粘合。上述粘合不相容性例如可以由表面或施加于其上的涂层的物理化学性质或者大于预定阈值的粗糙度值（r'2，r'7）产生。本发明还涉及使用本发明方法制造的堆叠结构。

3. 发明授权

US06833080B2 Optical switch with mobile components and method for making same 失效
标题翻译：具有移动组件的光开关及其制作方法
公开(公告)号：US06833080B2
公开(公告)日：2004-12-21
申请号：US10239845
申请日：2002-10-01
申请人： Patrick Pouteau , Jacques Margail
发明人： Patrick Pouteau , Jacques Margail
IPC分类号： B29D1100
CPC分类号： G02B6/3518 , G02B6/3514 , G02B6/3546 , G02B6/357 , G02B6/358 , G02B6/3584 , G02B26/0841
摘要： Optical switch comprising optical means (120) and driving means (114, 115, 124) on a substrate (100), cooperating with optical means to make them pivot between a rest position and at least one active position. According to the invention, the switch comprises first mobile stop means (122), rigidly fixed to the optical means (120, 130) so that they can pivot with the optical means, and second fixed stop means (128) arranged in a plane approximately parallel to the main face (110) of the substrate and cooperating with the first stop means, to fix the said active position of the optical means. Application to make an optical cross connect.
摘要翻译：光学开关包括在基板（100）上的光学装置（120）和驱动装置（114,115,124），与光学装置协作使它们在静止位置和至少一个活动位置之间枢转。根据本发明，开关包括刚性地固定到光学装置（120,130）上的第一移动停止装置（122），使得它们能够与光学装置枢转，并且第二固定止动装置（128）大致布置在平面中平行于基板的主面（110）并与第一止动装置配合，以固定光学装置的所述活动位置。用于进行光交叉连接。

4. 发明申请

US20060281212A1 Stacked structure and production method thereof 有权
标题翻译：堆叠结构及其制造方法
公开(公告)号：US20060281212A1
公开(公告)日：2006-12-14
申请号：US10565621
申请日：2004-07-15
申请人： Hubert Moriceau , Bernard Aspar , Jacques Margail
发明人： Hubert Moriceau , Bernard Aspar , Jacques Margail
IPC分类号： H01L21/00
CPC分类号： B81B3/001 , B81C2201/112 , H01L21/76251 , H01L21/76256
摘要： The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.
摘要翻译：本发明涉及一种堆叠结构的制造方法。本发明的方法包括以下步骤：a）使用例如由硅制成的第一板（1）和例如由硅制成的第二板（5），使得在至少部分地，所述第一（1）和第二（5）板中的至少一个具有不能结合到另一个板的表面（2; 7） b）在第一板的表面（2）和/或第二板的表面（7）的至少一部分上提供例如由氧化硅制成的表面层（3; 8）（5）; 和c）将两个板（1; 5）彼此粘合。上述粘合不相容性例如可以由表面或施加于其上的涂层的物理化学性质或由粗糙度值（r'2，r'7 >）大于预定阈值。本发明还涉及使用本发明方法制造的堆叠结构。

5. 发明授权

US4975126A Process for the production of an insulating layer embedded in a semiconductor substrate by ionic implantation and semiconductor structure comprising such layer 失效
标题翻译：用于通过离子注入生产嵌入半导体衬底中的绝缘层的方法以及包括这种层的半导体结构
公开(公告)号：US4975126A
公开(公告)日：1990-12-04
申请号：US207379
申请日：1988-06-15
申请人： Jacques Margail , John Stoemenos
发明人： Jacques Margail , John Stoemenos
IPC分类号： H01L21/76 , H01L21/02 , H01L21/265 , H01L21/762 , H01L21/84 , H01L27/12
CPC分类号： H01L21/76243 , H01L21/26533
摘要： A process for the production of an insulator buried in a semiconductor substrate by ionic implantation, and semiconductor structure comprising such layer.According to the invention the semiconductor structure comprises a silicon dioxide layer (104) interposed between a silicon substrate (102) and a silicon film (106) obtained by successive implantations of oxygen ions in the substrate, with doses less than 1.5.multidot.10.sup.18 ions/cm.sup.2, each implantation being followed by an annealing at a temperature higher than 1100.degree. C. The semi-conductor film (106) has a level of dislocations lower than 10.sup.5 per cm.sup.2, and the oxide layer (104) is completely homogeneous.
摘要翻译：通过离子注入生产埋在半导体衬底中的绝缘体的方法，以及包括这种层的半导体结构。根据本发明，半导体结构包括介于硅衬底（102）和通过在衬底中连续注入氧离子获得的硅膜（106）之间的二氧化硅层（104），剂量小于1.5×1018离子/ cm 2 每个注入之后，在高于1100℃的温度下进行退火。半导体膜（106）的位错水平低于每平方厘米105，并且氧化物层（104）完全均匀。

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