会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Qualification of a mask
    • 面具资格
    • US07330249B2
    • 2008-02-12
    • US11554309
    • 2006-10-30
    • Avishai BarotvGadi GreenbergChaim Braude
    • Avishai BarotvGadi GreenbergChaim Braude
    • G01N21/00
    • H04W4/18H04L51/066H04L51/24H04L67/02H04W8/18
    • A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.
    • 一种用于限定掩模的可印刷性的方法,包括在来自掩模的辐射的第一数值孔径(NAC)下用光学组件执行掩模的第一次检查,并且响应于第一检查确定第一可能的 掩模中的缺陷和第一可能缺陷的第一位置。 该方法还包括在来自不同于第一NAC的掩模的第二NAC辐射下,用光学组件执行掩模的第二次检查,并且响应于此,确定掩模中的第二可能的缺陷和第二位置 第二个可能的缺陷。 该方法还包括执行第一和第二位置的比较,并且响应于比较,如果第一位置与第二位置匹配,则确定第一和第二可能缺陷代表实际缺陷。
    • 4. 发明申请
    • QUALIFICATION OF A MASK
    • 面具资格
    • US20070127017A1
    • 2007-06-07
    • US11554309
    • 2006-10-30
    • AVISHAI BARTOVGadi GreenbergChaim Braude
    • AVISHAI BARTOVGadi GreenbergChaim Braude
    • G01N21/88
    • H04W4/18H04L51/066H04L51/24H04L67/02H04W8/18
    • A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.
    • 一种用于限定掩模的可印刷性的方法,包括在来自掩模的辐射的第一数值孔径(NAC)下用光学组件执行掩模的第一次检查,并且响应于第一检查确定第一可能的 掩模中的缺陷和第一可能缺陷的第一位置。 该方法还包括在来自不同于第一NAC的掩模的第二NAC辐射下,用光学组件执行掩模的第二次检查,并且响应于此,确定掩模中的第二可能的缺陷和第二位置 第二个可能的缺陷。 该方法还包括执行第一和第二位置的比较,并且响应于比较,如果第一位置与第二位置匹配,则确定第一和第二可能缺陷代表实际缺陷。