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1. 发明授权

US07330249B2 Qualification of a mask 有权
标题翻译：面具资格
公开(公告)号：US07330249B2
公开(公告)日：2008-02-12
申请号：US11554309
申请日：2006-10-30
申请人： Avishai Barotv , Gadi Greenberg , Chaim Braude
发明人： Avishai Barotv , Gadi Greenberg , Chaim Braude
IPC分类号： G01N21/00
CPC分类号： H04W4/18 , H04L51/066 , H04L51/24 , H04L67/02 , H04W8/18
摘要： A method for qualifying printability of a mask, including performing a first inspection of the mask with an optical assembly at a first numerical aperture of collection (NAC) of radiation from the mask, and determining, in response to the first inspection, a first possible defect in the mask and a first location of the first possible defect. The method also includes performing a second inspection of the mask with the optical assembly at a second NAC of radiation from the mask, different from the first NAC, and determining, in response thereto, a second possible defect in the mask and a second location of the second possible defect. The method further includes performing a comparison of the first and second locations, and in response to the comparison, determining that the first and second possible defects represent a real defect if the first location matches the second location.
摘要翻译：一种用于限定掩模的可印刷性的方法，包括在来自掩模的辐射的第一数值孔径（NAC）下用光学组件执行掩模的第一次检查，并且响应于第一检查确定第一可能的掩模中的缺陷和第一可能缺陷的第一位置。该方法还包括在来自不同于第一NAC的掩模的第二NAC辐射下，用光学组件执行掩模的第二次检查，并且响应于此，确定掩模中的第二可能的缺陷和第二位置第二个可能的缺陷。该方法还包括执行第一和第二位置的比较，并且响应于比较，如果第一位置与第二位置匹配，则确定第一和第二可能缺陷代表实际缺陷。

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