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1. 发明授权

US08518815B2 Methods, devices, and materials for metallization 有权
标题翻译：用于金属化的方法，装置和材料
公开(公告)号：US08518815B2
公开(公告)日：2013-08-27
申请号：US12832034
申请日：2010-07-07
申请人： Artur Kolics , William T. Lee , Fritz Redeker
发明人： Artur Kolics , William T. Lee , Fritz Redeker
IPC分类号： H01L21/44
CPC分类号： H01L24/04 , H01L21/76849 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/03464 , H01L2224/0401 , H01L2224/05026 , H01L2224/05099 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05571 , H01L2224/05573 , H01L2224/05599 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/13 , H01L2224/13023 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.
摘要翻译：一种制造电子器件的方法，其在一个实施例中包括提供衬底，至少在衬底的一部分上无电沉积阻挡金属，并且使用湿化学如无电镀沉积将具有焊料润湿性的基本上无金的润湿层沉积到屏障金属。在一个实施例中的电子设备包括金属化堆叠。金属化堆叠包括无电沉积的阻挡金属和沉积在阻挡金属上的基本无金的润湿层，并且润湿层可被焊料润湿。

2. 发明申请

US20120013008A1 METALLIZATION PROCESSES, MIXTURES, AND ELECTRONIC DEVICES 有权
标题翻译：金属化工艺，混合物和电子器件
公开(公告)号：US20120013008A1
公开(公告)日：2012-01-19
申请号：US12835534
申请日：2010-07-13
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： H01L23/532 , C25D15/00
CPC分类号： H05K1/09 , C23C18/1607 , C23C18/1662 , C23C18/1834 , C23C18/1844 , C23C18/31 , C23C18/40 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/20 , C25D3/22 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/54 , C25D3/562 , C25D5/02 , C25D7/123 , C25D15/00 , H01L21/288 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.
摘要翻译：本发明的一个方面是一种处理衬底的方法。在一个实施方案中，该方法包括通过提供包含金属颗粒和无电镀沉积溶液的混合物和无电沉积金属基质并共沉积金属颗粒在基底上或基底上形成电导体。在另一个实施方案中，该方法包括通过提供包含金属颗粒和电化学电镀溶液的混合物以及电化学镀金属基质并共沉积金属颗粒在基底上或基底上形成电导体。本发明的另一方面是用于在基底上或基底中形成电导体的混合物。本发明的另一方面是电子设备。

3. 发明申请

US20110143553A1 INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
标题翻译：综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁
公开(公告)号：US20110143553A1
公开(公告)日：2011-06-16
申请号：US12965765
申请日：2010-12-10
申请人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
发明人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
IPC分类号： H01L21/469 , B05C3/02 , B05C11/00 , B05C11/02
CPC分类号： H01L21/288 , C23C18/1642 , C23C18/1689 , C23C18/1872 , H01L21/76849
摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.
摘要翻译：用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。然后用清洗液在无电沉积模块中冲洗基材的表面。控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

4. 发明授权

US09058975B2 Cleaning solution formulations for substrates 有权
标题翻译：基材清洗剂配方
公开(公告)号：US09058975B2
公开(公告)日：2015-06-16
申请号：US12205896
申请日：2008-09-07
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： C09K13/04 , C11D7/32 , H01L21/02 , C09K13/00 , C11D7/16 , C11D7/26 , C11D7/34 , C11D11/00
CPC分类号： H01L21/02057 , C09K13/00 , C11D3/0073 , C11D3/0084 , C11D7/16 , C11D7/261 , C11D7/3281 , C11D7/34 , C11D11/0047
摘要： Presented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present.
摘要翻译：提出了根据本发明的一个实施方案的清洁溶液，其包括腐蚀抑制剂，增溶剂，除氧剂和还可以作为pH调节剂的络合剂。本发明的另一个实施方案包括包括pH调节剂，任选的络合剂和腐蚀抑制剂的清洁溶液。清洁溶液可以具有任选存在的增溶剂，可以具有任选存在的表面活性剂，并且可以具有任选存在的电介质蚀刻剂。

5. 发明授权

US08518826B2 Metallization processes, mixtures, and electronic devices 有权
标题翻译：金属化工艺，混合物和电子设备
公开(公告)号：US08518826B2
公开(公告)日：2013-08-27
申请号：US12835534
申请日：2010-07-13
申请人： Artur Kolics , Fritz Redeker
发明人： Artur Kolics , Fritz Redeker
IPC分类号： H01L21/44
CPC分类号： H05K1/09 , C23C18/1607 , C23C18/1662 , C23C18/1834 , C23C18/1844 , C23C18/31 , C23C18/40 , C23C18/50 , C23C18/52 , C25D3/12 , C25D3/20 , C25D3/22 , C25D3/30 , C25D3/38 , C25D3/46 , C25D3/48 , C25D3/50 , C25D3/54 , C25D3/562 , C25D5/02 , C25D7/123 , C25D15/00 , H01L21/288 , H01L21/2885 , H01L21/76877 , H01L21/76898 , H01L23/53209 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention is a method of processing a substrate. In one embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electroless deposition solution and electrolessly depositing a metal matrix and co-depositing the metal particles. In another embodiment, the method comprises forming an electrical conductor on or in the substrate by providing a mixture comprising metal particles and an electrochemical plating solution and electrochemically plating a metal matrix and co-depositing the metal particles. Another aspect of the present invention is a mixture for the formation of an electrical conductor on or in a substrate. Another aspect of the present invention is an electronic device.
摘要翻译：本发明的一个方面是一种处理衬底的方法。在一个实施方案中，该方法包括通过提供包含金属颗粒和无电镀沉积溶液的混合物和无电沉积金属基质并共沉积金属颗粒在基底上或基底上形成电导体。在另一个实施方案中，该方法包括通过提供包含金属颗粒和电化学电镀溶液的混合物以及电化学镀金属基质并共沉积金属颗粒在基底上或基底上形成电导体。本发明的另一方面是用于在基底上或基底中形成电导体的混合物。本发明的另一方面是电子设备。

6. 发明申请

US20120007239A1 METHODS, DEVICES, AND MATERIALS FOR METALLIZATION 有权
标题翻译：用于金属化的方法，装置和材料
公开(公告)号：US20120007239A1
公开(公告)日：2012-01-12
申请号：US12832034
申请日：2010-07-07
申请人： Artur Kolics , William T. Lee , Fritz Redeker
发明人： Artur Kolics , William T. Lee , Fritz Redeker
IPC分类号： H01L23/488 , H01L21/768
CPC分类号： H01L24/04 , H01L21/76849 , H01L23/481 , H01L24/03 , H01L24/05 , H01L2224/03464 , H01L2224/0401 , H01L2224/05026 , H01L2224/05099 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05571 , H01L2224/05573 , H01L2224/05599 , H01L2224/05611 , H01L2224/05639 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/05666 , H01L2224/13 , H01L2224/13023 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00013 , H01L2924/00014 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要： A method of making an electronic device which in one embodiment comprises providing a substrate, electrolessly depositing a barrier metal at least on portions of the substrate, and using wet chemistry such as electroless deposition to deposit a substantially gold-free wetting layer having solder wettability onto the barrier metal. An electronic device which in one embodiment comprises a metallization stack. The metallization stack comprises a barrier metal deposited electrolessly and a substantially gold-free wetting layer deposited on the barrier metal, and the wetting layer is wettable by solder.
摘要翻译：一种制造电子器件的方法，其在一个实施例中包括提供衬底，至少在衬底的一部分上无电沉积阻挡金属，并且使用湿化学如无电镀沉积将具有焊料润湿性的基本上无金的润湿层沉积到屏障金属。在一个实施例中的电子设备包括金属化堆叠。金属化堆叠包括无电沉积的阻挡金属和沉积在阻挡金属上的基本无金的润湿层，并且润湿层可被焊料润湿。

7. 发明申请

US20110065273A1 Methods of Fabricating a Barrier Layer Over Interconnect Structures in Atomic Deposition Environments 审中-公开
标题翻译：在原子沉积环境中互连结构上形成阻挡层的方法
公开(公告)号：US20110065273A1
公开(公告)日：2011-03-17
申请号：US12950952
申请日：2010-11-19
申请人： Hyungsuk Alexander YOON , Fritz Redeker
发明人： Hyungsuk Alexander YOON , Fritz Redeker
IPC分类号： H01L21/768
CPC分类号： H01L21/28562 , C23C16/029 , C23C16/34 , C23C16/45529 , H01L21/02183 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/318 , H01L21/76843 , H01L21/76846
摘要： Methods of depositing a barrier layer on an interconnect structure in an atomic deposition environment are provided. One method includes depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic deposition environment, The interconnect structure is formed in a dielectric layer. Then, continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic deposition environment. The nitrogen concentration step-wisely decreases from the first nitrogen concentration in the first phase of the barrier layer to the second nitrogen concentration in the second phase of the barrier layer, and the first nitrogen concentration is highest where the barrier layer is in contact with the dielectric layer. A copper layer is then formed over the barrier layer, such that a nitrogen concentration in the barrier layer is lowest where the barrier layer is in contact with the copper layer.
摘要翻译：提供了在原子沉积环境中在互连结构上沉积势垒层的方法。一种方法包括在原子沉积环境中的第一沉积阶段期间，在互连结构上沉积具有第一氮浓度的阻挡层。互连结构形成在电介质层中。然后，在原子沉积环境中的第二相沉积期间，继续以互补结构沉积第二氮浓度。氮浓度从势垒层的第一相中的第一氮浓度逐渐降低到阻挡层的第二相中的第二氮浓度，并且第一氮浓度最高，其中阻挡层与电介质层。然后在阻挡层上形成铜层，使阻挡层中的氮浓度最低，其中阻挡层与铜层接触。

8. 发明授权

US07749893B2 Methods and systems for low interfacial oxide contact between barrier and copper metallization 有权
标题翻译：屏障和铜金属化之间的低界面氧化物接触的方法和系统
公开(公告)号：US07749893B2
公开(公告)日：2010-07-06
申请号：US11641361
申请日：2006-12-18
申请人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
发明人： Fritz Redeker , John Boyd , Yezdi Dordi , Hyungsuk Alexander Yoon , Shijian Li
IPC分类号： H01L21/4763
CPC分类号： C25D7/123 , C23C18/1653 , C23C28/023 , C23C28/322 , C23C28/34 , C23C28/341 , H01L21/28562 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于半导体器件金属化的方法和系统。本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。该方法还包括在ALD铜上沉积间隙填充铜层。本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。在一个实施例中，集成系统包括至少一个阻挡层沉积模块。该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。

9. 发明授权

US07584761B1 Wafer edge surface treatment with liquid meniscus 失效
标题翻译：晶圆边缘表面处理液体半月板
公开(公告)号：US07584761B1
公开(公告)日：2009-09-08
申请号：US11292465
申请日：2005-12-02
申请人： Seokmin Yun , John M. Boyd , John M. de Larios , Fritz Redeker
发明人： Seokmin Yun , John M. Boyd , John M. de Larios , Fritz Redeker
IPC分类号： B08B3/00
CPC分类号： B08B3/04 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： A method for cleaning an edge surface of a semiconductor substrate is disclosed. The proximity head unit is positioned so that the flow head portion and the collection head portion of the proximity head unit are proximate to the edge surface of the semiconductor substrate. The semiconductor substrate is then rotated using one or more powered rollers. During the rotation of the semiconductor substrate, the flow head portion applies a fluid to the edge surface while the collection head portion collects fluid from the edge surface. Additional methods, an apparatuses, and a system for cleaning an edge surface of a semiconductor substrate are also described.
摘要翻译：公开了一种用于清洁半导体衬底的边缘表面的方法。邻近头单元被定位成使得接近头单元的流动头部分和收集头部分靠近半导体衬底的边缘表面。然后使用一个或多个动力辊旋转半导体衬底。在半导体基板旋转期间，流动头部向边缘表面施加流体，而收集头部分从边缘表面收集流体。还描述了另外的方法，装置和用于清洁半导体衬底的边缘表面的系统。

10. 发明申请

US20070227656A1 Apparatus and method for confined area planarization 有权
标题翻译：限制区域平面化的装置和方法
公开(公告)号：US20070227656A1
公开(公告)日：2007-10-04
申请号：US11395881
申请日：2006-03-31
申请人： John Boyd , Fritz Redeker , Yezdi Dordi , Michael Ravkin , John Larios
发明人： John Boyd , Fritz Redeker , Yezdi Dordi , Michael Ravkin , John Larios
IPC分类号： H01L21/461 , H01L21/306
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

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