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1. 发明授权

US4264715A Method of preparing resist pattern 失效
标题翻译：制备抗蚀剂图案的方法
公开(公告)号：US4264715A
公开(公告)日：1981-04-28
申请号：US94048
申请日：1979-11-14
申请人： Akira Miura , Shozo Hideyama , Iwao Higashikawa
发明人： Akira Miura , Shozo Hideyama , Iwao Higashikawa
IPC分类号： G03F1/00 , G03F1/68 , G03F1/80 , G03F7/039 , G03F7/32 , H01L21/027 , G03C5/00
CPC分类号： G03F7/039 , G03F7/325
摘要： A method of preparing a fine and highly precise resist pattern comprising a step of forming a positive resist layer consisting of poly-(methacrylic anhydride) on a substrate, a step of irradiating the resist layer thus formed with a predetermined pattern of ionizing radiation and a step of developing the irradiated resist pattern with a developer comprising a solvent mixture composed of a polar organic solvent (A) capable of dissolving poly-(methyacrylic anhydride) and a non-solvent (B) incapable of dissolving poly-(methacrylic anhydride).
摘要翻译：一种制备精细且高精度的抗蚀剂图案的方法，包括在基板上形成由聚（甲基丙烯酸酐）组成的正性抗蚀剂层的步骤，以预定的电离辐射图案照射如此形成的抗蚀剂层的步骤和用包含由能够溶解聚（甲基丙烯酸酐）的极性有机溶剂（A）和不溶于聚（甲基丙烯酸酐）的非溶剂（B））组成的溶剂混合物的显影剂显影照射的抗蚀剂图案的步骤。

2. 发明授权

US06806941B2 Pattern forming method and pattern forming apparatus 失效
标题翻译：图案形成方法和图案形成装置
公开(公告)号：US06806941B2
公开(公告)日：2004-10-19
申请号：US10006133
申请日：2001-12-10
申请人： Soichi Inoue , Iwao Higashikawa , Yoji Ogawa , Shigehiro Hara , Kazuko Yamamoto
发明人： Soichi Inoue , Iwao Higashikawa , Yoji Ogawa , Shigehiro Hara , Kazuko Yamamoto
IPC分类号： G03B2742
CPC分类号： G03F7/70425
摘要： A method of forming a pattern for a semiconductor device comprises the steps of forming a photosensitive film on a substrate and radiating the photosensitive film on the substrate with a beam of a predetermined shape consisting of one of a charged particle beam and an electromagnetic beam, thereby forming an exposed region of a desired shape, the latter step including the step of exposing each of unit regions by a single shot of the beam of the predetermined shape for a predetermined period of time, repeating the exposure a plurality of times, and butt-joining the exposed unit regions to thereby form the exposed region of the desired shape, wherein, in the step of forming the exposed region of the desired shape, butting portions of the unit regions are situated in a first area of a layer to be formed other than a second area in the layer in which predetermined characteristics of a function of the semiconductor device are determined by a pattern width of the exposed region in association with another pattern formed in another layer.
摘要翻译：一种形成半导体器件的图案的方法包括以下步骤：在基片上形成感光膜，并用由带电粒子束和电磁束之一构成的预定形状的光束将光敏膜照射在基片上，由此形成期望形状的曝光区域，后一步骤包括通过预定时间段的光束的单次曝光曝光每个单元区域的步骤，重复曝光多次，接合曝光的单元区域，从而形成所需形状的曝光区域，其中在形成所需形状的曝光区域的步骤中，单元区域的对接部分位于待形成的层的第一区域中比在半导体器件的功能的预定特性由相关联中的暴露区域的图案宽度确定的层中的第二区域 n在另一层中形成另一图案。

3. 发明授权

US06333138B1 Exposure method utilizing partial exposure stitch area 失效
标题翻译：曝光方法采用部分曝光针迹区域
公开(公告)号：US06333138B1
公开(公告)日：2001-12-25
申请号：US09520631
申请日：2000-03-07
申请人： Iwao Higashikawa , Takayuki Abe
发明人： Iwao Higashikawa , Takayuki Abe
IPC分类号： G03C500
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70441 , G03F7/70475 , H01J37/3174 , H01J2237/31764 , Y10S430/143
摘要： An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.
摘要翻译：提供顺序光束的曝光方法，有助于提高曝光区域的端部的连接部分的对准精度以及图案尺寸精度。该方法包括以下步骤：将要暴露的区域划分为多个场，每个场由主偏转器的偏转宽度确定，将每个场分成多个子场，每个子场由子场的偏转宽度确定，偏转器，通过使用可变形的电子束对每个场施加顺序曝光处理，以及对相邻场相互重叠的区域施加多次曝光处理，其中在该区域中以子场为单位进行多次曝光处理确定每个曝光单元的曝光剂量，使得经受多次曝光处理的区域中的总曝光剂量设定为等于施加单次曝光处理时使用的曝光剂量，在多个区域内的曝光剂量曝光过程在从场的外边缘朝向与边界部分的纵向方向垂直的方向上逐步减小使用曝光装置中可获得的最小曝光剂量作为下限来确定在多次曝光处理区域内的曝光剂量。

4. 发明授权

US06265696B1 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06265696B1
公开(公告)日：2001-07-24
申请号：US09371845
申请日：1999-08-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27B514
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切割进入辐射温度计的杂散光（噪声光）。

5. 发明授权

US5847468A Alignment mark for use in making semiconductor devices 失效
公开(公告)号：US5847468A
公开(公告)日：1998-12-08
申请号：US873563
申请日：1997-06-12
申请人： Hiroshi Nomura , Iwao Higashikawa , Akitoshi Kumagae
发明人： Hiroshi Nomura , Iwao Higashikawa , Akitoshi Kumagae
IPC分类号： G03F9/00 , H01L21/027 , H01L23/544
CPC分类号： G03F9/7076 , H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002
摘要： An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

6. 发明授权

US5326672A Resist patterns and method of forming resist patterns 失效
标题翻译：抗蚀剂图案和形成抗蚀剂图案的方法
公开(公告)号：US5326672A
公开(公告)日：1994-07-05
申请号：US964715
申请日：1992-10-22
申请人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
发明人： Toshihiko Tanaka , Mitsuaki Morigami , Iwao Higashikawa , Takeo Watanabe
IPC分类号： G03F7/30 , G03C5/00
CPC分类号： G03F7/30
摘要： In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.
摘要翻译：根据所提出的抗蚀剂图案形成方法，将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内，将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力，冲洗液在冲洗的临界条件下干燥，以免引起表面张力。因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失，从而可以有效地防止图形的下降，这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。另一方面，根据所述抗蚀剂图案的结构，可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。通过提供这种效果，产品的产量增加。此外，本发明还可以应用于光，电子，X射线，离子束等的光刻照明源

7. 发明授权

US06333493B1 Heat treating method and heat treating apparatus 失效
标题翻译：热处理方法和热处理装置
公开(公告)号：US06333493B1
公开(公告)日：2001-12-25
申请号：US09666108
申请日：2000-09-20
申请人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
发明人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
IPC分类号： H05B302
CPC分类号： H01L21/67115 , F26B3/28 , H05B3/0047
摘要： Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.
摘要翻译：公开了一种用于通过光照射加热目标基板的热处理方法，其中对目标基板进行多次光照射处理，使得目标基板上的相邻光照射区域彼此部分重叠，并且这些相互之间的相邻光照射区域彼此部分重叠，相邻的光照射区域在光照射期间不重叠。

8. 发明授权

US5851842A Measurement system and measurement method 失效
标题翻译：测量系统和测量方法
公开(公告)号：US5851842A
公开(公告)日：1998-12-22
申请号：US857360
申请日：1997-05-15
申请人： Ryota Katsumata , Nobuo Hayasaka , Naoki Yasuda , Hideshi Miyajima , Iwao Higashikawa , Masaki Hotta
发明人： Ryota Katsumata , Nobuo Hayasaka , Naoki Yasuda , Hideshi Miyajima , Iwao Higashikawa , Masaki Hotta
IPC分类号： G01R15/22 , C23C16/50 , C23C16/52 , G01B11/06 , G01J5/00 , G01J5/58 , G01N21/27 , G01N21/35 , G01N21/3563 , G01N27/60 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/66 , H05H1/46 , H01L21/00
CPC分类号： H01J37/32935 , B24B37/013 , C23C16/50 , C23C16/52 , G01B11/0683 , G01J5/0003 , H01L22/26 , H01L22/12
摘要： The measurement system comprises a holder for holding a dielectric film formed on at least a semiconductive substrate and sandwiched between the substrate and a conductive film, voltage application terminals for applying voltage between the substrate and the conductive film, variable voltage source for supplying the voltage to the voltage application terminals, a light source for irradiating the dielectric film with light including wavelength of an infrared region and transmitting the light through the dielectric film, light absorbance detector receiving the light transmitted through the dielectric film, for detecting absorbance of an absorbed light component in an absorption wavelength region intrinsic to the dielectric film, and a potential difference measurement unit for measuring a potential difference between the substrate and the conductive film of the dielectric film on the basis of change in absorbance of the light component when the voltage is changed by the variable voltage source.
摘要翻译：该测量系统包括：保持器，用于保持形成在至少半导体基板上并夹在基板和导电膜之间的电介质膜，用于在基板和导电膜之间施加电压的电压施加端子，用于将电压提供给电压施加端子，用于用包括红外区域的波长的光照射电介质膜并将光透过电介质膜的光源，接收透过电介质膜的光的吸光度检测器，用于检测吸收的光成分的吸光度在电介质膜本征的吸收波长区域中，以及电位差测量单元，用于根据电压变化时的光成分的吸光度的变化来测定基板与电介质膜的导电膜之间的电位差可变电压s 我们

9. 发明授权

US5629115A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5629115A
公开(公告)日：1997-05-13
申请号：US583857
申请日：1996-01-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

10. 发明授权

US5262282A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US5262282A
公开(公告)日：1993-11-16
申请号：US908918
申请日：1992-07-02
申请人： Katsuhiko Hieda , Iwao Higashikawa
发明人： Katsuhiko Hieda , Iwao Higashikawa
IPC分类号： G03F7/038 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/316 , H01L21/3213
CPC分类号： G03F7/38 , G03F7/038 , G03F7/265 , H01L21/0273 , H01L21/0274 , H01L21/316 , H01L21/32139
摘要： A pattern forming method of a resist to be used in the manufacturing process of a semiconductor device. The desired area of a resist film is made hydrophilic by an exposure and a mask material is precipitated and deposited on the area of resist film made hydrophilic in the solution. The patterning of resist film is thus carried out, and a pattern of high reliability is formed. After exposure, by silylizing or baking the resist film, a pattern of higher reliability is formed. Furthermore, after patterning of the resist film, the precipitation and deposition of the mask material are carried out again, and a reversed pattern of high reliability is formed by eliminating the resist film made with patterning by the lift-off process.
摘要翻译：在半导体器件的制造工艺中使用的抗蚀剂的图案形成方法。通过曝光使抗蚀剂膜的期望面积变得亲水，并且掩模材料沉淀并沉积在在溶液中形成亲水性的抗蚀剂膜的区域上。因此进行抗蚀剂膜的图案化，形成高可靠性的图案。曝光后，通过对抗蚀剂膜进行甲硅烷基化或烘焙，形成更高可靠性的图案。此外，在抗蚀剂膜图案化之后，再次进行掩模材料的沉淀和沉积，并且通过消除通过剥离处理而形成图案化的抗蚀剂膜，形成高可靠性的反转图案。

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