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1. 发明授权

US5686209A Phase shifting mask and method of forming a pattern using the same 失效
标题翻译：相移掩模和使用其形成图案的方法
公开(公告)号：US5686209A
公开(公告)日：1997-11-11
申请号：US754162
申请日：1996-11-22
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

2. 发明授权

US5609977A Reflection phase shifting mask and method of forming a pattern using the same 失效
标题翻译：反射相移掩模和使用其形成图案的方法
公开(公告)号：US5609977A
公开(公告)日：1997-03-11
申请号：US589638
申请日：1996-01-22
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

3. 发明授权

US5907393A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5907393A
公开(公告)日：1999-05-25
申请号：US729592
申请日：1996-10-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G01N21/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

4. 发明授权

US5728494A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5728494A
公开(公告)日：1998-03-17
申请号：US730017
申请日：1996-10-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photo-sensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。此外，本发明提供了一种用于制造曝光掩模的装置。

5. 发明授权

US5514499A Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same 失效
标题翻译：相移掩模，其包括多层结构和使用其形成图案的方法
公开(公告)号：US5514499A
公开(公告)日：1996-05-07
申请号：US249038
申请日：1994-05-25
申请人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
发明人： Takayuki Iwamatsu , Kenji Kawano , Hideya Miyazaki , Shinichi Ito , Soichi Inoue , Hiroyuki Sato , Satoshi Tanaka , Koji Hashimoto
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/34 , G03F9/00
CPC分类号： G03F1/34 , G03F1/26 , G03F1/32
摘要： A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..
摘要翻译：用于通过在光反射时形成具有相位差的反射光来曝光图案的反射相移掩模包括反射曝光光的基板，形成在基板上的部分上的相移层和形成在基板上的光传输介质基板和相移层，其中相移层的厚度被设定为使得由基板反射的光与由相移层反射的光之间的相位差成为180度。

6. 发明授权

US5700605A Mask for light exposure and process for production of the same 失效
标题翻译：面罩用于曝光和生产的过程相同
公开(公告)号：US5700605A
公开(公告)日：1997-12-23
申请号：US616306
申请日：1996-03-15
申请人： Shin-ichi Ito , Takayuki Iwamatsu
发明人： Shin-ichi Ito , Takayuki Iwamatsu
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , G03F1/84 , G03F1/86 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30 , G03F1/32
摘要： There is disclosed a mask for light exposure which comprises being provided with a light transparent substrate and a mask pattern formed on the light transparent substrate, the mask pattern comprising a light screening pattern composed of a material which screens the exposure light and transmits the light having the longer wavelength than that of the exposure light and a phase shift pattern formed by engraving a part of the light transparent substrate.
摘要翻译：公开了一种用于曝光的掩模，其包括设置有透光基板和形成在透光基板上的掩模图案，掩模图案包括由屏蔽曝光光的材料构成的遮光图案，并透射具有比曝光光的波长长，通过雕刻一部分透光性基板而形成的相移图案。

7. 发明授权

US5629115A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5629115A
公开(公告)日：1997-05-13
申请号：US583857
申请日：1996-01-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

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