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1. 发明授权

US5629115A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5629115A
公开(公告)日：1997-05-13
申请号：US583857
申请日：1996-01-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

2. 发明授权

US5907393A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5907393A
公开(公告)日：1999-05-25
申请号：US729592
申请日：1996-10-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G01N21/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。另外，本发明提供了一种用于制造曝光掩模的装置，包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源，用于检测从光源发射的光的光电检测单元和通过透光膜透射或反射，以及测量单元，用于根据由光检测单元检测到的光来测量半透膜的特性。

3. 发明授权

US5728494A Exposure mask and method and apparatus for manufacturing the same 失效
标题翻译：曝光掩模及其制造方法和装置
公开(公告)号：US5728494A
公开(公告)日：1998-03-17
申请号：US730017
申请日：1996-10-11
申请人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
发明人： Kenji Kawano , Shinichi Ito , Iwao Higashikawa , Masamitsu Itoh , Takashi Kamo , Hiroaki Hazama , Takayuki Iwamatsu
IPC分类号： G03F1/32 , G03F1/68 , G03F9/00
CPC分类号： G03F1/32 , G03F1/68
摘要： This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photo-sensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask.
摘要翻译：本发明提供一种曝光掩模，其包括形成在透光基板上并具有掩模图案的半透明膜，以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域膜以防止半透明膜的物理性质的变化。此外，本发明提供一种制造曝光掩模的方法，包括以下步骤：在透光性基板上形成半透膜，在半透膜上形成感光性树脂膜，通过使感光性树脂膜曝光，形成感光性树脂图案通过使用感光性树脂图案作为掩模去除透光性膜的露出部分，除去感光性树脂图案，在透光性基板与透光性的界面之间形成稳定区域或在形成感光树脂膜的步骤之前或在形成感光性树脂图案的步骤之后，至少在半透明膜的表面上。此外，本发明提供了一种用于制造曝光掩模的装置。

4. 发明授权

US06265696B1 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06265696B1
公开(公告)日：2001-07-24
申请号：US09371845
申请日：1999-08-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27B514
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切割进入辐射温度计的杂散光（噪声光）。

5. 发明授权

US06333493B1 Heat treating method and heat treating apparatus 失效
标题翻译：热处理方法和热处理装置
公开(公告)号：US06333493B1
公开(公告)日：2001-12-25
申请号：US09666108
申请日：2000-09-20
申请人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
发明人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
IPC分类号： H05B302
CPC分类号： H01L21/67115 , F26B3/28 , H05B3/0047
摘要： Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.
摘要翻译：公开了一种用于通过光照射加热目标基板的热处理方法，其中对目标基板进行多次光照射处理，使得目标基板上的相邻光照射区域彼此部分重叠，并且这些相互之间的相邻光照射区域彼此部分重叠，相邻的光照射区域在光照射期间不重叠。

6. 发明授权

US06680462B2 Heat treating method and heat treating apparatus 失效
标题翻译：热处理方法和热处理装置
公开(公告)号：US06680462B2
公开(公告)日：2004-01-20
申请号：US10282114
申请日：2002-10-29
申请人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
发明人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
IPC分类号： H05B368
CPC分类号： H01L21/67115 , F26B3/28 , H05B3/0047
摘要： Disclosed is an apparatus for heating a target substrate by means of light irradiation. The heating apparatus includes a substrate support section for supporting the target substrate, an irradiating light generating section for irradiating the light irradiating regions of the target substrate supported by the substrate support section, and a light irradiating region changing section for changing the light irradiating regions of the target substrate irradiated with the light generated from the irradiating light generation section.
摘要翻译：公开了一种通过光照射加热目标基板的装置。加热装置包括用于支撑目标基板的基板支撑部分，用于照射由基板支撑部分支撑的目标基板的光照射区域的照射光产生部分和用于改变基板支撑部分的光照射区域的光照射区域改变部分所述目标基板用从所述照射光产生部产生的光照射。

7. 发明授权

US06483083B2 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06483083B2
公开(公告)日：2002-11-19
申请号：US09877147
申请日：2001-06-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27D1100
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切入进入辐射温度计的杂散光（噪声光）。

8. 发明授权

US06495807B2 Heat treating method and heat treating apparatus 失效
标题翻译：热处理方法和热处理装置
公开(公告)号：US06495807B2
公开(公告)日：2002-12-17
申请号：US09983667
申请日：2001-10-25
申请人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
发明人： Hideaki Sakurai , Shinichi Ito , Iwao Higashikawa , Akitoshi Kumagae
IPC分类号： H05B302
CPC分类号： H01L21/67115 , F26B3/28 , H05B3/0047
摘要： Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which light irradiation treatment is applied to the target substrate such that the light irradiation regions of the target substrate do not overlap with each other, the light irradiation treatment being performed by using an irradiating light adjusted such that the distribution of the light intensity within the light irradiation region of the target substrate is rendered uniform.
摘要翻译：公开了一种通过光照射对目标基板进行加热的热处理方法，其中对目标基板施加光照射处理，使得目标基板的光照射区域彼此不重叠，光照射处理为通过使用被调整为使得目标基板的光照射区域内的光强度分布变得均匀的照射光进行。

9. 发明授权

US06806941B2 Pattern forming method and pattern forming apparatus 失效
标题翻译：图案形成方法和图案形成装置
公开(公告)号：US06806941B2
公开(公告)日：2004-10-19
申请号：US10006133
申请日：2001-12-10
申请人： Soichi Inoue , Iwao Higashikawa , Yoji Ogawa , Shigehiro Hara , Kazuko Yamamoto
发明人： Soichi Inoue , Iwao Higashikawa , Yoji Ogawa , Shigehiro Hara , Kazuko Yamamoto
IPC分类号： G03B2742
CPC分类号： G03F7/70425
摘要： A method of forming a pattern for a semiconductor device comprises the steps of forming a photosensitive film on a substrate and radiating the photosensitive film on the substrate with a beam of a predetermined shape consisting of one of a charged particle beam and an electromagnetic beam, thereby forming an exposed region of a desired shape, the latter step including the step of exposing each of unit regions by a single shot of the beam of the predetermined shape for a predetermined period of time, repeating the exposure a plurality of times, and butt-joining the exposed unit regions to thereby form the exposed region of the desired shape, wherein, in the step of forming the exposed region of the desired shape, butting portions of the unit regions are situated in a first area of a layer to be formed other than a second area in the layer in which predetermined characteristics of a function of the semiconductor device are determined by a pattern width of the exposed region in association with another pattern formed in another layer.
摘要翻译：一种形成半导体器件的图案的方法包括以下步骤：在基片上形成感光膜，并用由带电粒子束和电磁束之一构成的预定形状的光束将光敏膜照射在基片上，由此形成期望形状的曝光区域，后一步骤包括通过预定时间段的光束的单次曝光曝光每个单元区域的步骤，重复曝光多次，接合曝光的单元区域，从而形成所需形状的曝光区域，其中在形成所需形状的曝光区域的步骤中，单元区域的对接部分位于待形成的层的第一区域中比在半导体器件的功能的预定特性由相关联中的暴露区域的图案宽度确定的层中的第二区域 n在另一层中形成另一图案。

10. 发明授权

US06333138B1 Exposure method utilizing partial exposure stitch area 失效
标题翻译：曝光方法采用部分曝光针迹区域
公开(公告)号：US06333138B1
公开(公告)日：2001-12-25
申请号：US09520631
申请日：2000-03-07
申请人： Iwao Higashikawa , Takayuki Abe
发明人： Iwao Higashikawa , Takayuki Abe
IPC分类号： G03C500
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70441 , G03F7/70475 , H01J37/3174 , H01J2237/31764 , Y10S430/143
摘要： An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.
摘要翻译：提供顺序光束的曝光方法，有助于提高曝光区域的端部的连接部分的对准精度以及图案尺寸精度。该方法包括以下步骤：将要暴露的区域划分为多个场，每个场由主偏转器的偏转宽度确定，将每个场分成多个子场，每个子场由子场的偏转宽度确定，偏转器，通过使用可变形的电子束对每个场施加顺序曝光处理，以及对相邻场相互重叠的区域施加多次曝光处理，其中在该区域中以子场为单位进行多次曝光处理确定每个曝光单元的曝光剂量，使得经受多次曝光处理的区域中的总曝光剂量设定为等于施加单次曝光处理时使用的曝光剂量，在多个区域内的曝光剂量曝光过程在从场的外边缘朝向与边界部分的纵向方向垂直的方向上逐步减小使用曝光装置中可获得的最小曝光剂量作为下限来确定在多次曝光处理区域内的曝光剂量。

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