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1. 发明申请

US20130059241A1 DEVELOPMENT PROCESSING METHOD AND DEVELOPMENT PROCESSING APPARATUS 审中-公开
标题翻译：发展处理方法和开发处理装置
公开(公告)号：US20130059241A1
公开(公告)日：2013-03-07
申请号：US13584954
申请日：2012-08-14
申请人： Hideaki SAKURAI , Masatoshi Terayama
发明人： Hideaki SAKURAI , Masatoshi Terayama
IPC分类号： G03F7/30 , G03B27/52
CPC分类号： G03F7/30
摘要： According to one embodiment, a monitor pattern is previously exposed together with a device pattern on a resist film, the monitor pattern is developed in a first development condition and a fault occurrence risk is quantified based on a check image. At this time, the range of a second development condition in which the number of faults becomes less than or equal to a permissible value with respect to the quantified fault occurrence risk is determined based on the relationship between fault occurrence risk information and the number of faults. Then, a third development condition in which the pattern dimension becomes a desired value in the second development condition is determined and the device pattern is developed in the thus determined third development condition.
摘要翻译：根据一个实施例，监视器图案预先与抗蚀剂膜上的器件图案一起暴露，监视器图案在第一显影条件下显影，并且基于检查图像量化故障发生风险。此时，根据故障发生风险信息与故障次数之间的关系确定故障数量变得小于或等于相对于量化的故障发生风险的允许值的第二开发条件的范围。然后，确定在第二显影条件下图案尺寸成为期望值的第三显影条件，并且在如此确定的第三显影条件下显影装置图案。

2. 发明授权

US08383298B2 Substrate processing method, manufacturing method of EUV mask, and EUV mask 有权
标题翻译：基板处理方法，EUV掩模的制造方法和EUV掩模
公开(公告)号：US08383298B2
公开(公告)日：2013-02-26
申请号：US13034143
申请日：2011-02-24
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03F1/50 , G03F1/60
CPC分类号： G03F7/70058 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/38
摘要： According to the substrate processing method in the embodiments, as a mask substrate used for forming an EUV mask, a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface is exposed from a side of the resist. Then, a hydrophilic treatment is performed on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity. Then, a development treatment of the resist is performed with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
摘要翻译：根据实施方式的基板处理方法，作为用于形成EUV掩模的掩模基板，将在一个主面上形成有具有第一亲水性的第一膜并且将抗蚀剂施加到另一主表面的掩模基板露出从抗蚀剂的一侧。然后，对第一膜的表面进行亲水处理，使第一膜的表面具有比第一亲水性大的第二亲水性。然后，相对于对第一膜的表面进行亲水处理的掩模基板进行抗蚀剂的显影处理以具有第二亲水性。

3. 发明申请

US20120295100A1 METHOD FOR PRODUCING FERROELECTRIC THIN FILM 有权
标题翻译：生产薄膜薄膜的方法
公开(公告)号：US20120295100A1
公开(公告)日：2012-11-22
申请号：US13471845
申请日：2012-05-15
申请人： Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Toshihiro Doi
发明人： Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Toshihiro Doi
IPC分类号： B32B9/00 , B05D5/12
CPC分类号： H01L41/1876 , C30B1/023 , C30B29/16 , H01L21/02186 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02304 , H01L21/28291 , H01L28/55 , H01L28/56 , H01L28/65 , H01L28/75 , H01L29/516 , H01L35/22 , H01L35/34 , H01L41/0815 , H01L41/318 , H01L41/319 , Y10T428/249921 , Y10T428/25 , Y10T428/26 , Y10T428/265
摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.
摘要翻译：一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物，并且在（111）方向上取向晶体取向的基极，对所述涂布组合物进行煅烧，然后进行焙烧，使涂布的组合物结晶，使基底电极上形成铁电薄膜，其中，该方法包括通过将该组合物涂布在基极上，煅烧涂布组合物而形成取向控制层，并且对涂覆组合物进行焙烧，其中涂覆在基极上的组合物的量被控制为使结晶后的取向控制层的厚度在5nm至30nm的范围内，从而控制取向控制层位于（110）面。

4. 发明申请

US20120100330A1 LIQUID AND METHOD FOR REMOVING CSD COATED FILM, FERROELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：用于去除CSD涂膜的液体和方法，微电薄膜及其制造方法
公开(公告)号：US20120100330A1
公开(公告)日：2012-04-26
申请号：US13380288
申请日：2010-04-21
申请人： Nobuyuki Soyama , Toshiaki Watanabe , Hideaki Sakurai
发明人： Nobuyuki Soyama , Toshiaki Watanabe , Hideaki Sakurai
IPC分类号： B32B3/02 , B44C1/22 , B05D3/10 , C09K13/00
CPC分类号： H01L21/02087 , H01L21/02197 , H01L21/02282
摘要： Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives.
摘要翻译：在CSD法热处理之前，通过喷涂或滴加用于除去包含以重量比为50:50至0:100混合的水和有机溶剂的CSD涂膜的液体，在基板的外周边缘处去除涂覆膜，其中所述有机溶剂是选自由β-二酮，酮基酯，多元醇，羧酸，链烷醇胺，α-羟基羧酸，α-羟基羰基衍生物和腙衍生物组成的组中的一种或多种。

5. 发明申请

US20120069117A1 PRINTING PRESS 有权
标题翻译：印刷机
公开(公告)号：US20120069117A1
公开(公告)日：2012-03-22
申请号：US13322230
申请日：2010-05-21
申请人： Hideaki Sakurai , Shoichi Aoki , Makoto Kaji , Norifumi Tasaka
发明人： Hideaki Sakurai , Shoichi Aoki , Makoto Kaji , Norifumi Tasaka
IPC分类号： B41J2/01
CPC分类号： B41J3/546 , B41F13/02 , B41F19/007
摘要： In a printing press, it is configured such that a newspaper web offset printing press is composed by a feeder device, a printing device, a guiding device, a turn bar device, and a folding unit; as a guiding device, there are provided an upstream side guide roller and a downstream side guide roller which are disposed with a predetermined interval along a transportation direction of a web for guiding transportation of the web; and there is disposed an ink-jet printer for performing digital printing on the web guided between the guide rollers. By setting diameters of the upstream side guide roller and the downstream side guide roller to different values, vibration of the print medium which is transported while being guided by the guide rollers is suppressed, and the print quality is thereby improved.
摘要翻译：在印刷机中，由纸送纸装置，印刷装置，引导装置，转杆装置和折叠单元构成报纸卷筒纸胶版印刷机。作为引导装置，设置有沿着幅材的传送方向以预定间隔布置的上游侧引导辊和下游侧引导辊，用于引导幅材的传送; 并且设置有用于在引导辊之间引导的幅材上进行数字印刷的喷墨打印机。通过将上游侧引导辊和下游侧引导辊的直径设定为不同的值，可以抑制在被引导辊引导的同时传送的打印介质的振动，从而提高打印质量。

6. 发明授权

US08017287B2 Development method, method of manufacturing photomask, and method of manufacturing semiconductor device 有权
标题翻译：开发方法，制造光掩模的方法以及制造半导体器件的方法
公开(公告)号：US08017287B2
公开(公告)日：2011-09-13
申请号：US12559735
申请日：2009-09-15
申请人： Hideaki Sakurai , Masatoshi Terayama
发明人： Hideaki Sakurai , Masatoshi Terayama
IPC分类号： G03F1/00 , G03F7/30 , G03F7/40
CPC分类号： G03F7/30 , G03F1/00 , G03F7/3028
摘要： A development method according to an embodiment includes exposing a photosensitive film formed on a substrate at a predetermined exposure amount, carrying out a first development process that develops the exposed photosensitive film at a predetermined first development condition so as to leave the photosensitive film, obtaining a sensitivity information of an unexposed photosensitive film on the substrate from a film thickness reduction of the photosensitive film developed by the first development process and the predetermined exposure amount, predicting pattern dimensions of multiple types of patterns to be formed when a second development process is carried out following the first development process from the sensitivity information, and determining a first acceptable range of a development condition in the second development process, determining a second acceptable range of the development condition in the second development process from the first acceptable range and a variation amount of pattern dimensions between the multiple types of patterns after the second development process and determining a second development condition in the second development process so as to satisfy both of the first and second acceptable ranges. The development method is used for forming a mask pattern on a photomask, which is then used for patterning a wafer in the manufacturing of a semiconductor device.
摘要翻译：根据实施方案的显影方法包括以预定曝光量曝光形成在基板上的感光膜，进行在预定的第一显影条件下显影曝光的感光膜以便使感光膜离开的第一显影处理，获得通过第一显影处理显影的感光性膜的膜厚减少和预定的曝光量，预测基板上未曝光的感光膜的感光度信息，预测在进行第二显影处理时将形成的多种图案的图案尺寸在从所述灵敏度信息进行的第一开发过程之后，并且确定所述第二开发过程中的开发条件的第一可接受范围，从所述第一可接受范围和变化中确定所述第二开发过程中的所述开发条件的第二可接受范围在第二显影处理之后，在多种类型的图案之间绘制图案尺寸，并确定第二显影处理中的第二显影条件以便满足第一和第二可接受范围。显影方法用于在光掩模上形成掩模图案，然后将其用于制造半导体器件中的晶片图案化。

7. 发明申请

US20110207031A1 SUBSTRATE PROCESSING METHOD, MANUFACTURING METHOD OF EUV MASK, AND EUV MASK 有权
标题翻译：基板处理方法，EUV掩模和EUV掩模的制造方法
公开(公告)号：US20110207031A1
公开(公告)日：2011-08-25
申请号：US13034143
申请日：2011-02-24
申请人： Hideaki SAKURAI , Masatoshi TERAYAMA
发明人： Hideaki SAKURAI , Masatoshi TERAYAMA
IPC分类号： G03F1/00
CPC分类号： G03F7/70058 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F1/38
摘要： According to the substrate processing method in the embodiments, as a mask substrate used for forming an EUV mask, a mask substrate in which a first film having a first hydrophilicity is formed on one main surface and a resist is applied to another main surface is exposed from a side of the resist. Then, a hydrophilic treatment is performed on a surface of the first film to make the surface of the first film have a second hydrophilicity larger than the first hydrophilicity. Then, a development treatment of the resist is performed with respect to the mask substrate in which the hydrophilic treatment is performed on the surface of the first film to have the second hydrophilicity.
摘要翻译：根据实施方式的基板处理方法，作为用于形成EUV掩模的掩模基板，将在一个主面上形成有具有第一亲水性的第一膜并且将抗蚀剂施加到另一主表面的掩模基板露出从抗蚀剂的一侧。然后，对第一膜的表面进行亲水处理，使第一膜的表面具有比第一亲水性大的第二亲水性。然后，相对于对第一膜的表面进行亲水处理的掩模基板进行抗蚀剂的显影处理以具有第二亲水性。

8. 发明申请

US20080003460A1 Mgo Vapor Deposition Material 审中-公开
标题翻译： Mgo蒸气沉积材料
公开(公告)号：US20080003460A1
公开(公告)日：2008-01-03
申请号：US11571957
申请日：2005-07-13
申请人： Hideaki Sakurai , Yoshitaka Mayuzumi , Hiroki Hirata
发明人： Hideaki Sakurai , Yoshitaka Mayuzumi , Hiroki Hirata
IPC分类号： B32B9/00 , C01F5/00
CPC分类号： C04B35/645 , C03C17/245 , C03C2217/228 , C04B35/053 , C04B35/6261 , C04B35/62625 , C04B35/6263 , C04B35/62655 , C04B35/6455 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3272 , C04B2235/3418 , C04B2235/5427 , C04B2235/5436 , C04B2235/72 , C04B2235/77 , C23C14/081 , C23C14/3414 , H01J9/02 , H01J11/12 , H01J11/40
摘要： A MgO vapor deposition material, which is used to form a protective film of a plasma display panel, comprises pellets having MgO purity of 98% or more and relative density of 90% or more. The pellets contain one, or two or more kinds of elements selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, and Sm. The concentration of Y is from 5 to 10,000 ppm in the case of containing Y, the concentration of La is from 5 to 15,000 ppm in the case of containing La, the concentration of Ce, Pr, Nd, Pm, and Sm is from 5 to 16,000 ppm in the case of containing Ce, Pr, Nd, Pm and Sm respectively.
摘要翻译：用于形成等离子体显示面板的保护膜的MgO蒸镀材料包含MgO的纯度为98％以上，相对密度为90％以上的颗粒。颗粒含有选自Y，La，Ce，Pr，Nd，Pm和Sm中的一种或两种或更多种元素。在含有Y的情况下，Y的浓度为5〜10,000ppm，在含有La的情况下，La的浓度为5〜15,000ppm，Ce，Pr，Nd，Pm，Sm的浓度为5 在分别含有Ce，Pr，Nd，Pm和Sm的情况下为16,000ppm。

9. 发明申请

US20060172205A1 Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product 有权
公开(公告)号：US20060172205A1
公开(公告)日：2006-08-03
申请号：US11342677
申请日：2006-01-31
申请人： Hideaki Sakurai , Tooru Shibata , Masato Saito , Masamitsu Itoh
发明人： Hideaki Sakurai , Tooru Shibata , Masato Saito , Masamitsu Itoh
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F7/70625 , G03F7/70558 , Y10S430/143
摘要： A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

10. 发明授权

US06995104B2 Polycrystalline MgO deposition material having adjusted Si concentration 失效
标题翻译：具有调节Si浓度的多晶MgO沉积材料
公开(公告)号：US06995104B2
公开(公告)日：2006-02-07
申请号：US10682039
申请日：2003-10-10
申请人： Eung Chul Park , Hideaki Sakurai , Yoshirou Kuromitsu , Ginjiro Toyoguchi
发明人： Eung Chul Park , Hideaki Sakurai , Yoshirou Kuromitsu , Ginjiro Toyoguchi
IPC分类号： C04B35/04
CPC分类号： H01J11/40 , C03C17/3411 , H01J11/12
摘要： It is an object of the present invention to provide a polycrystalline MgO deposition material which is capable of obtaining a good discharge response characteristic over a wide temperature range. Additionally, it is another object of the present invention to provide a plasma display panel with an improved luminance and a material for the plasma display panel which can remarkably reduce the number of address ICs without lowering the panel luminance. In order to achieve the objects, there is provided an improvement of a polycrystalline MgO deposition material for a passivation layer of the plasma display panel. A characteristic structure is that the polycrystalline MgO deposition material is formed of a sintered pellet of polycrystalline MgO, of which MgO purity is more than 99.9% and relative density is more than 90%. Further, a Si concentration in the polycrystalline MgO is more than 30 ppm and less than 500 ppm.
摘要翻译：本发明的目的是提供一种多晶MgO沉积材料，其能够在宽的温度范围内获得良好的放电响应特性。此外，本发明的另一个目的是提供一种具有改进的亮度的等离子体显示面板和用于等离子体显示面板的材料，其可以显着地减少地址IC的数量而不降低面板亮度。为了实现上述目的，提供了用于等离子体显示面板的钝化层的多晶MgO沉积材料的改进。特征结构是多晶MgO沉积材料由多晶MgO的烧结颗粒形成，其中MgO的纯度大于99.9％，相对密度大于90％。此外，多晶MgO中的Si浓度大于30ppm且小于500ppm。

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